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Pam ME, Li S, Su T, Chien YC, Li Y, Ang YS, Ang KW. Interface-Modulated Resistive Switching in Mo-Irradiated ReS 2 for Neuromorphic Computing. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2202722. [PMID: 35610176 DOI: 10.1002/adma.202202722] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/24/2022] [Revised: 04/30/2022] [Indexed: 06/15/2023]
Abstract
Coupling charge impurity scattering effects and charge-carrier modulation by doping can offer intriguing opportunities for atomic-level control of resistive switching (RS). Nonetheless, such effects have remained unexplored for memristive applications based on 2D materials. Here a facile approach is reported to transform an RS-inactive rhenium disulfide (ReS2 ) into an effective switching material through interfacial modulation induced by molybdenum-irradiation (Mo-i) doping. Using ReS2 as a model system, this study unveils a unique RS mechanism based on the formation/dissolution of metallic β-ReO2 filament across the defective ReS2 interface during the set/reset process. Through simple interfacial modulation, ReS2 of various thicknesses are switchable by modulating the Mo-irradiation period. Besides, the Mo-irradiated ReS2 (Mo-ReS2 ) memristor further exhibits a bipolar non-volatile switching ratio of nearly two orders of magnitude, programmable multilevel resistance states, and long-term synaptic plasticity. Additionally, the fabricated device can achieve a high MNIST learning accuracy of 91% under a non-identical pulse train. The study's findings demonstrate the potential for modulating RS in RS-inactive 2D materials via the unique doping-induced charged impurity scattering property.
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Affiliation(s)
- Mei Er Pam
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
| | - Sifan Li
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
| | - Tong Su
- Science, Mathematics and Technology (SMT), Singapore University of Technology and Design (SUTD), 8 Somapah Road, Singapore, 487372, Singapore
| | - Yu-Chieh Chien
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
| | - Yesheng Li
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
| | - Yee Sin Ang
- Science, Mathematics and Technology (SMT), Singapore University of Technology and Design (SUTD), 8 Somapah Road, Singapore, 487372, Singapore
| | - Kah-Wee Ang
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
- Institute of Materials Research and Engineering, A*STAR, 2 Fusionopolis, Singapore, 138634, Singapore
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Zhang X, Zhu T, Huang J, Wang Q, Cong X, Bi X, Tang M, Zhang C, Zhou L, Zhang D, Su T, Dai X, Meng K, Li Z, Qiu C, Zhao WW, Tan PH, Zhang H, Yuan H. Electric Field Tuning of Interlayer Coupling in Noncentrosymmetric 3R-MoS 2 with an Electric Double Layer Interface. ACS APPLIED MATERIALS & INTERFACES 2020; 12:46900-46907. [PMID: 32931238 DOI: 10.1021/acsami.0c12165] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Interlayer coupling in two-dimensional (2D) layered materials plays an important role in controlling their properties. 2H- and 3R-MoS2 with different stacking orders and the resulting interlayer coupling have been recently discovered to have different band structures and a contrast behavior in valley physics. However, the role of carrier doping in interlayer coupling in 2D materials remains elusive. Here, based on the electric double layer interface, we demonstrated the experimental observation of carrier doping-enhanced interlayer coupling in 3R-MoS2. A remarkable tuning of interlayer Raman modes can be observed by changing the stacking sequence and carrier doping near their monolayer limit. The modulated interlayer vibration modes originated from the interlayer coupling show a doping-induced blue shift and are supposed to be associated with the interlayer coupling enhancement, which is further verified using our first-principles calculations. Such an electrical control of interlayer coupling of layered materials in an electrical gating geometry provides a new degree of freedom to modify the physical properties in 2D materials.
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Affiliation(s)
- Xi Zhang
- National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P. R. China
- School of Physics, Nanjing University, Nanjing 210093, P. R. China
- College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, P. R. China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China
| | - Tongshuai Zhu
- National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P. R. China
- School of Physics, Nanjing University, Nanjing 210093, P. R. China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China
| | - Junwei Huang
- National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P. R. China
- College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, P. R. China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China
| | - Qian Wang
- School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210023, P. R. China
| | - Xin Cong
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
| | - Xiangyu Bi
- National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P. R. China
- College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, P. R. China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China
| | - Ming Tang
- National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P. R. China
- School of Physics, Nanjing University, Nanjing 210093, P. R. China
- College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, P. R. China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China
| | - Caorong Zhang
- National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P. R. China
- School of Physics, Nanjing University, Nanjing 210093, P. R. China
- College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, P. R. China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China
| | - Ling Zhou
- National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P. R. China
- College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, P. R. China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China
| | - Dongqin Zhang
- National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P. R. China
- School of Physics, Nanjing University, Nanjing 210093, P. R. China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China
- Department of Physics, China Jiliang University, Hangzhou 310018, P. R. China
| | - Tong Su
- National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P. R. China
- College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, P. R. China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China
| | - Xueting Dai
- National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P. R. China
- College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, P. R. China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China
| | - Kui Meng
- National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P. R. China
- College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, P. R. China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China
| | - Zeya Li
- National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P. R. China
- College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, P. R. China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China
| | - Caiyu Qiu
- National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P. R. China
- College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, P. R. China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China
| | - Wei-Wei Zhao
- School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210023, P. R. China
| | - Ping-Heng Tan
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
| | - Haijun Zhang
- National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P. R. China
- School of Physics, Nanjing University, Nanjing 210093, P. R. China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China
| | - Hongtao Yuan
- National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P. R. China
- College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, P. R. China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China
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Muz İ, Kurban M, Şanlı K. Analysis of the geometrical properties and electronic structure of arsenide doped boron clusters: Ab-initio approach. Inorganica Chim Acta 2018. [DOI: 10.1016/j.ica.2018.01.030] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/18/2022]
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Lu JS, Yang MC, Su MD. The effect of substituents on triply bonded boron[triple bond, length as m-dash]antimony molecules: a theoretical approach. Phys Chem Chem Phys 2017; 19:8026-8033. [PMID: 28263330 DOI: 10.1039/c7cp00421d] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/15/2022]
Abstract
Three (M06-2X/Def2-TZVP, B3PW91/Def2-TZVP and B3LYP/LANL2DZ+dp) levels of theory are used to study the effect of substituents on the potential energy surfaces of RB[triple bond, length as m-dash]SbR (R = F, OH, H, CH3, SiH3, SiMe(SitBu3)2, SiiPrDis2 and NHC). The theoretical results demonstrate that the triply bonded RB[triple bond, length as m-dash]SbR molecules favor a bent geometry: that is, ∠R-B-Sb ≈ 180° and ∠B-Sb-R ≈ 120°. Regardless of the type of substituents that are attached to the RB[triple bond, length as m-dash]SbR compounds, theoretical evidence strongly indicates that their B[triple bond, length as m-dash]Sb triple bonds have a donor-acceptor nature and are proven to be very weak. Two valence bond models clarify the bonding characters of the B[triple bond, length as m-dash]Sb triple bond. For RB[triple bond, length as m-dash]SbR molecules that feature small substituents, the triple bond is represented as . For RB[triple bond, length as m-dash]SbR molecules that feature large substituents, the triple bond is represented as . Most importantly, this theoretical study predicts that only bulkier substituents significantly stabilize the triply bonded RB[triple bond, length as m-dash]SbR molecules, from the kinetic viewpoint.
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Affiliation(s)
- Jia-Syun Lu
- Department of Applied Chemistry, National Chiayi University, Chiayi 60004, Taiwan.
| | - Ming-Chung Yang
- Department of Applied Chemistry, National Chiayi University, Chiayi 60004, Taiwan.
| | - Ming-Der Su
- Department of Applied Chemistry, National Chiayi University, Chiayi 60004, Taiwan. and Department of Medicinal and Applied Chemistry, Kaohsiung Medical University, Kaohsiung 80708, Taiwan
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Goniakowski J, Noguera C. Conditions for electronic reconstruction at stoichiometric polar/polar interfaces. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2014; 26:485010. [PMID: 25374280 DOI: 10.1088/0953-8984/26/48/485010] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
Relying on first principles simulations of ZnO(0 0 0 1)/MgO(1 1 1), MgO(1 1 1)/CaO(1 1 1) and AlN(0 0 0 1)/GaN(0 0 0 1) interfaces and examples taken from the literature, we discuss under which conditions stoichiometric polar/polar interfaces may display an electronic reconstruction. We point out the role of the three contributions to the interfacial polarization discontinuity--structure, valence and electronic terms--of interfacial strains, and of finite size effects. Depending upon their relative values, the interfaces may be polar (compensated by an electron reconstruction), non-polar, or polar uncompensated at low thickness. We stress that, in superlattices or heterostructures made of thin layers, the prediction of the interface polarity character from the bulk properties of the two materials may be questionable.
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Affiliation(s)
- Jacek Goniakowski
- CNRS, UMR 7588, Institut des Nanosciences de Paris, F-75005 Paris, France. Sorbonne Universités, UPMC Université Paris 06, UMR 7588, INSP, F-75005 Paris, France
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7
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Mathpal MC, Tripathi AK, Kumar P, R. B, Singh MK, Chung JS, Hur SH, Agarwal A. Polymorphic transformations and optical properties of graphene-based Ag-doped titania nanostructures. Phys Chem Chem Phys 2014; 16:23874-83. [DOI: 10.1039/c4cp02982h] [Citation(s) in RCA: 15] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/27/2023]
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Ersan F, Gökoğlu G, Aktürk E. Electronic structure of BSb defective monolayers and nanoribbons. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2014; 26:325303. [PMID: 25049113 DOI: 10.1088/0953-8984/26/32/325303] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
In this paper, we investigate two- and one-dimensional honeycomb structures of boron antimony (BSb) using a first-principles plane wave method within the density functional theory. BSb with a two-dimensional honeycomb structure is a semiconductor with a 0.336 eV band gap. The vacancy defects, such as B, Sb, B + Sb divacancy, and B + Sb antisite disorder affect the electronic and magnetic properties of the 2D BSb sheet. All the structures with vacancies have nonmagnetic metallic characters, while the system with antisite disorder has a semiconducting band structure. We also examine bare and hydrogen-passivated quasi-one-dimensional armchair BSb nanoribbons. The effects of ribbon width (n) on an armchair BSb nanoribbon and hydrogen passivation on both B and Sb edge atoms are considered. The band gaps of bare and H passivated A-Nr-BSb oscillate with increasing ribbon width; this property is important for quantum dots. For ribbon width n = 12, the bare A-Nr-BSb is a nonmagnetic semiconductor with a 0.280 eV indirect band gap, but it becomes a nonmagnetic metal when B edge atoms are passivated with hydrogen. When Sb atoms are passivated with hydrogen, a ferromagnetic half-metallic ground state is observed with 2.09μB magnetic moment. When both B and Sb edges are passivated with hydrogen, a direct gap semiconductor is obtained with 0.490 eV band gap with disappearance of the bands of edge atoms.
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Affiliation(s)
- F Ersan
- Department of Physics, Adnan Menderes University, Aydin 09100, Turkey
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Bechstedt F, Belabbes A. Structure, energetics, and electronic states of III-V compound polytypes. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2013; 25:273201. [PMID: 23778868 DOI: 10.1088/0953-8984/25/27/273201] [Citation(s) in RCA: 37] [Impact Index Per Article: 3.4] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/15/2023]
Abstract
Recently several hexagonal polytypes such as 2H, 4H, and 6H have been discovered for conventional III-V semiconductor compounds in addition to the cubic 3C zinc-blende polytype by investigating nanorods grown in the [111] direction in different temperature regimes. Also III-mononitrides crystallizing in the hexagonal 2H wurtzite structure under ambient conditions can be deposited in zinc-blende geometry using various growth techniques. The polytypic crystal structures influence the local electronic properties and the internal electric fields due to the spontaneous polarization in non-cubic crystals.In this paper we give a comprehensive review on the thermodynamic, structural, and electronic properties of twelve Al, Ga, and In antimonides, arsenides, phosphides, and nitrides as derived from ab initio calculations. Their lattice parameters, energetic stability, and characteristic band structure energies are carefully discussed and related to the atomic geometries of the polytypes. Chemical trends are investigated. Band offsets between polytypes and their consequences for heterocrystalline structures are derived. The described properties are discussed in the light of available experimental data and previous computations. Despite several contradictory results in the literature, a unified picture of the III-V polytypes and their heterocrystalline structures is developed.
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Affiliation(s)
- Friedhelm Bechstedt
- Institut für Festkörpertheorie und -optik, Friedrich-Schiller-Universität, Max-Wien-Platz 1, D-07743 Jena, Germany.
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Wei L, Fan W, Li Y, Zhao X, Yang L. Effect of cation ordering on the electronic and lattice dynamic properties of Ag2CdGeS4 polytypes: First-principle calculation. J SOLID STATE CHEM 2013. [DOI: 10.1016/j.jssc.2013.02.007] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/27/2022]
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Kaur P, Sekhon SS, Kumar V. Prediction of rock salt structure of (InN)32 nanoparticles from first principles calculations. J Chem Phys 2013; 138:114310. [DOI: 10.1063/1.4795580] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/22/2023] Open
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Ameri M, Bouzouira N, Khenata R, Al-Douri Y, Bouhafs B, Bin-Omran S. FP-LMTO method to calculate the structural, thermodynamic and optoelectronic properties of SixGe1−xC alloys. Mol Phys 2013. [DOI: 10.1080/00268976.2013.775517] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/27/2022]
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Stability Criteria of Fullerene-like Nanoparticles: Comparing V₂O 5 to Layered Metal Dichalcogenides and Dihalides. MATERIALS 2010; 3:4428-4445. [PMID: 28883335 PMCID: PMC5445837 DOI: 10.3390/ma3084428] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/21/2010] [Revised: 07/21/2010] [Accepted: 08/09/2010] [Indexed: 11/16/2022]
Abstract
Numerous examples of closed-cage nanostructures, such as nested fullerene-like nanoparticles and nanotubes, formed by the folding of materials with layered structure are known. These compounds include WS₂, NiCl₂, CdCl₂, Cs₂O, and recently V₂O₅. Layered materials, whose chemical bonds are highly ionic in character, possess relatively stiff layers, which cannot be evenly folded. Thus, stress-relief generally results in faceted nanostructures seamed by edge-defects. V₂O₅, is a metal oxide compound with a layered structure. The study of the seams in nearly perfect inorganic "fullerene-like" hollow V₂O5 nanoparticles (NIF-V₂O₅) synthesized by pulsed laser ablation (PLA), is discussed in the present work. The relation between the formation mechanism and the seams between facets is examined. The formation mechanism of the NIF-V₂O5 is discussed in comparison to fullerene-like structures of other layered materials, like IF structures of MoS₂, CdCl₂, and Cs₂O. The criteria for the perfect seaming of such hollow closed structures are highlighted.
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Levi R, Bar-Sadan M, Albu-Yaron A, Popovitz-Biro R, Houben L, Shahar C, Enyashin A, Seifert G, Prior Y, Tenne R. Hollow V2O5 Nanoparticles (Fullerene-Like Analogues) Prepared by Laser Ablation. J Am Chem Soc 2010; 132:11214-22. [DOI: 10.1021/ja103719x] [Citation(s) in RCA: 41] [Impact Index Per Article: 2.9] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Affiliation(s)
- Roi Levi
- Materials and Interfaces Department, Weizmann Institute of Science, Rehovot, Israel, Institute of Solid State Research and Ernst-Ruska Centre for Microscopy and Spectroscopy with Electrons, Research Centre Jülich GmbH, 52425 Jülich, Germany, Electron Microscopy Unit, Weizmann Institute of Science, PO Box 26, Rehovot 76100, Israel, Physikalische Chemie, Technische Universität Dresden, D-01062 Dresden, Germany, Institute of Solid State Chemistry, Ekaterinburg, Russia, Chemical Physics Department, Weizmann
| | - Maya Bar-Sadan
- Materials and Interfaces Department, Weizmann Institute of Science, Rehovot, Israel, Institute of Solid State Research and Ernst-Ruska Centre for Microscopy and Spectroscopy with Electrons, Research Centre Jülich GmbH, 52425 Jülich, Germany, Electron Microscopy Unit, Weizmann Institute of Science, PO Box 26, Rehovot 76100, Israel, Physikalische Chemie, Technische Universität Dresden, D-01062 Dresden, Germany, Institute of Solid State Chemistry, Ekaterinburg, Russia, Chemical Physics Department, Weizmann
| | - Ana Albu-Yaron
- Materials and Interfaces Department, Weizmann Institute of Science, Rehovot, Israel, Institute of Solid State Research and Ernst-Ruska Centre for Microscopy and Spectroscopy with Electrons, Research Centre Jülich GmbH, 52425 Jülich, Germany, Electron Microscopy Unit, Weizmann Institute of Science, PO Box 26, Rehovot 76100, Israel, Physikalische Chemie, Technische Universität Dresden, D-01062 Dresden, Germany, Institute of Solid State Chemistry, Ekaterinburg, Russia, Chemical Physics Department, Weizmann
| | - Ronit Popovitz-Biro
- Materials and Interfaces Department, Weizmann Institute of Science, Rehovot, Israel, Institute of Solid State Research and Ernst-Ruska Centre for Microscopy and Spectroscopy with Electrons, Research Centre Jülich GmbH, 52425 Jülich, Germany, Electron Microscopy Unit, Weizmann Institute of Science, PO Box 26, Rehovot 76100, Israel, Physikalische Chemie, Technische Universität Dresden, D-01062 Dresden, Germany, Institute of Solid State Chemistry, Ekaterinburg, Russia, Chemical Physics Department, Weizmann
| | - Lothar Houben
- Materials and Interfaces Department, Weizmann Institute of Science, Rehovot, Israel, Institute of Solid State Research and Ernst-Ruska Centre for Microscopy and Spectroscopy with Electrons, Research Centre Jülich GmbH, 52425 Jülich, Germany, Electron Microscopy Unit, Weizmann Institute of Science, PO Box 26, Rehovot 76100, Israel, Physikalische Chemie, Technische Universität Dresden, D-01062 Dresden, Germany, Institute of Solid State Chemistry, Ekaterinburg, Russia, Chemical Physics Department, Weizmann
| | - Chen Shahar
- Materials and Interfaces Department, Weizmann Institute of Science, Rehovot, Israel, Institute of Solid State Research and Ernst-Ruska Centre for Microscopy and Spectroscopy with Electrons, Research Centre Jülich GmbH, 52425 Jülich, Germany, Electron Microscopy Unit, Weizmann Institute of Science, PO Box 26, Rehovot 76100, Israel, Physikalische Chemie, Technische Universität Dresden, D-01062 Dresden, Germany, Institute of Solid State Chemistry, Ekaterinburg, Russia, Chemical Physics Department, Weizmann
| | - Andrey Enyashin
- Materials and Interfaces Department, Weizmann Institute of Science, Rehovot, Israel, Institute of Solid State Research and Ernst-Ruska Centre for Microscopy and Spectroscopy with Electrons, Research Centre Jülich GmbH, 52425 Jülich, Germany, Electron Microscopy Unit, Weizmann Institute of Science, PO Box 26, Rehovot 76100, Israel, Physikalische Chemie, Technische Universität Dresden, D-01062 Dresden, Germany, Institute of Solid State Chemistry, Ekaterinburg, Russia, Chemical Physics Department, Weizmann
| | - Gotthard Seifert
- Materials and Interfaces Department, Weizmann Institute of Science, Rehovot, Israel, Institute of Solid State Research and Ernst-Ruska Centre for Microscopy and Spectroscopy with Electrons, Research Centre Jülich GmbH, 52425 Jülich, Germany, Electron Microscopy Unit, Weizmann Institute of Science, PO Box 26, Rehovot 76100, Israel, Physikalische Chemie, Technische Universität Dresden, D-01062 Dresden, Germany, Institute of Solid State Chemistry, Ekaterinburg, Russia, Chemical Physics Department, Weizmann
| | - Yehiam Prior
- Materials and Interfaces Department, Weizmann Institute of Science, Rehovot, Israel, Institute of Solid State Research and Ernst-Ruska Centre for Microscopy and Spectroscopy with Electrons, Research Centre Jülich GmbH, 52425 Jülich, Germany, Electron Microscopy Unit, Weizmann Institute of Science, PO Box 26, Rehovot 76100, Israel, Physikalische Chemie, Technische Universität Dresden, D-01062 Dresden, Germany, Institute of Solid State Chemistry, Ekaterinburg, Russia, Chemical Physics Department, Weizmann
| | - Reshef Tenne
- Materials and Interfaces Department, Weizmann Institute of Science, Rehovot, Israel, Institute of Solid State Research and Ernst-Ruska Centre for Microscopy and Spectroscopy with Electrons, Research Centre Jülich GmbH, 52425 Jülich, Germany, Electron Microscopy Unit, Weizmann Institute of Science, PO Box 26, Rehovot 76100, Israel, Physikalische Chemie, Technische Universität Dresden, D-01062 Dresden, Germany, Institute of Solid State Chemistry, Ekaterinburg, Russia, Chemical Physics Department, Weizmann
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Libotte H, Aquilanti G, Pascarelli S, Crichton WA, Le Bihan T, Gaspard JP. Symmetry breaking of ionic semiconductors under pressure: the case of InAs. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2009; 21:495801. [PMID: 21836204 DOI: 10.1088/0953-8984/21/49/495801] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2023]
Abstract
The NaCl-to-Cmcm phase transition and the Cmcm structure of InAs under high pressure are studied by x-ray diffraction. The lattice parameters and fractional coordinates are given as a function of pressure. We propose a mechanism responsible for this type of symmetry breaking under pressure. We show that the ppσ interactions do not play a major role in the stabilization of the NaCl structure. Consequently the NaCl-to-Cmcm transition occurs only in compounds with a large charge transfer. General conclusions on the behavior of III-V semiconductors under pressure are drawn.
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Affiliation(s)
- H Libotte
- Condensed Matter Physics Laboratory, University of Liège, B5, B-4000 Sart-Tilman, Belgium
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Berghout A, Zaoui A, Hugel J. Fundamental state quantities and high-pressure phase transition in beryllium chalcogenides. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2006; 18:10365-10375. [PMID: 21690923 DOI: 10.1088/0953-8984/18/46/005] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/30/2023]
Abstract
In this work we study the structural and electronic properties of Be chalcogenides (BeS, BeSe and BeTe) using two different methods: the full-potential linear augmented-plane wave (FP-LAPW) and the plane-wave pseudopotential (PPsPW). The exchange-correlation effects are treated in the local-density approximation (LDA) and the generalized-gradient approximation (GGA). We have evaluated the ground-state quantities such as equilibrium volume, bulk modulus and its pressure derivative as well as the elastic constants. Various structural phase transitions were considered here in order to confirm the most stable structure and to predict the phase transition under hydrostatic pressure. In addition we have studied the band structure and the density of states, which show a wide indirect band gap for these compounds. These results were in favourable agreement with previous theoretical works and the existing experimental data. To complete the fundamental characteristics of beryllium chalcogenide compounds we have analysed their bonding character in terms of charge transfer and the ionicity parameter. The latter is found to be in agreement with the charge transfer behaviour, which shows an important ionic localization.
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Affiliation(s)
- A Berghout
- LPMD Institut de Physique Electronique et de Chimie, 1 Boulevard Dominique-François Arago CP 87811, 57078 Metz Cedex 3, France. LML Ecole Polytechnique de Lille, Université des Sciences et Technologie de Lille, Cité Scientifique, Avenue Paul Langevin, 59655 Villeneuve d'Ascq Cedex, France
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Bousahla Z, Abbar B, Bouhafs B, Tadjer A. Full potential linearized augmented plane wave calculations of positronic and electronic charge densities of zinc-blende AlN, InN and their alloy Al0.5In0.5N. J SOLID STATE CHEM 2005. [DOI: 10.1016/j.jssc.2005.03.047] [Citation(s) in RCA: 13] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/25/2022]
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He J, Wu E, Wang H, Liu R, Tian Y. Ionicities of boron-boron bonds in B(12) icosahedra. PHYSICAL REVIEW LETTERS 2005; 94:015504. [PMID: 15698096 DOI: 10.1103/physrevlett.94.015504] [Citation(s) in RCA: 48] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/05/2004] [Indexed: 05/24/2023]
Abstract
First-principles calculations are used to investigate ionicities of boron-boron bonds in B(12) icosahedra. It is observed that the geometrical symmetry breaking of B(12) icosahedra results in the spatial asymmetry of charge density on each boron-boron bond, and further in the ionicity of B(12) icosahedra. The results calculated by a new ionicity scale, a population ionicity scale, indicate that the maximum ionicity among those boron-boron bonds is larger than that of boron-nitrogen bonds in the III-V compound cubic BN. It is of great importance that such an ionicity concept can be extended to boron-rich solids and identical atom clusters.
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Affiliation(s)
- Julong He
- Key Laboratory of Metastable Materials Science and Technology, Qinhuangdao 066004, China
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Segall MD, Shah R, Pickard CJ, Payne MC. Population analysis of plane-wave electronic structure calculations of bulk materials. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 54:16317-16320. [PMID: 9985733 DOI: 10.1103/physrevb.54.16317] [Citation(s) in RCA: 296] [Impact Index Per Article: 10.6] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Karch K, Bechstedt F, Pavone P, Strauch D. Pressure-dependent properties of SiC polytypes. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 53:13400-13413. [PMID: 9983085 DOI: 10.1103/physrevb.53.13400] [Citation(s) in RCA: 50] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Sabisch M, Krüger P, Mazur A, Rohlfing M, Pollmann J. First-principles calculations of beta -SiC(001) surfaces. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 53:13121-13132. [PMID: 9982991 DOI: 10.1103/physrevb.53.13121] [Citation(s) in RCA: 54] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Wellenhofer G, Karch K, Pavone P, Rössler U, Strauch D. Pressure dependence of static and dynamic ionicity of SiC polytypes. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 53:6071-6075. [PMID: 9982005 DOI: 10.1103/physrevb.53.6071] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Lee SG, Chang KJ. First-principles study of the structural properties of MgS-, MgSe-, ZnS-, and ZnSe-based superlattices. PHYSICAL REVIEW. B, CONDENSED MATTER 1995; 52:1918-1925. [PMID: 9981259 DOI: 10.1103/physrevb.52.1918] [Citation(s) in RCA: 40] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Sabisch M, Krüger P, Pollmann J. Ab initio calculations of SiC(110) and GaAs(110) surfaces: A comparative study and the role of ionicity. PHYSICAL REVIEW. B, CONDENSED MATTER 1995; 51:13367-13380. [PMID: 9978141 DOI: 10.1103/physrevb.51.13367] [Citation(s) in RCA: 35] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Aulbur WG, Levine ZH, Wilkins JW, Allan DC. Small calculated second-harmonic generation in Si1Ge1. PHYSICAL REVIEW. B, CONDENSED MATTER 1995; 51:10691-10700. [PMID: 9977764 DOI: 10.1103/physrevb.51.10691] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Grosch GH, Freytag B, Range K, Rössler U. Stability of CdxSn1−xTe in rocksalt structure: A study of zero‐flux surfaces and bonding character. J Chem Phys 1994. [DOI: 10.1063/1.468374] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
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Christensen NE, Gorczyca I. Optical and structural properties of III-V nitrides under pressure. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 50:4397-4415. [PMID: 9976740 DOI: 10.1103/physrevb.50.4397] [Citation(s) in RCA: 291] [Impact Index Per Article: 9.7] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Stefanovich EV, Shluger AL, Catlow CR. Theoretical study of the stabilization of cubic-phase ZrO2 by impurities. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 49:11560-11571. [PMID: 10010022 DOI: 10.1103/physrevb.49.11560] [Citation(s) in RCA: 94] [Impact Index Per Article: 3.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Park CH, Cheong BH, Lee KH, Chang KJ. Structural and electronic properties of cubic, 2H, 4H, and 6H SiC. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 49:4485-4493. [PMID: 10011368 DOI: 10.1103/physrevb.49.4485] [Citation(s) in RCA: 51] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Ueno M, Yoshida M, Onodera A, Shimomura O, Takemura K. Stability of the wurtzite-type structure under high pressure: GaN and InN. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 49:14-21. [PMID: 10009251 DOI: 10.1103/physrevb.49.14] [Citation(s) in RCA: 200] [Impact Index Per Article: 6.7] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Rubio A, Corkill JL, Cohen ML, Shirley EL, Louie SG. Quasiparticle band structure of AlN and GaN. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 48:11810-11816. [PMID: 10007519 DOI: 10.1103/physrevb.48.11810] [Citation(s) in RCA: 165] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Yoshida M, Onodera A, Ueno M, Takemura K, Shimomura O. Pressure-induced phase transition in SiC. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 48:10587-10590. [PMID: 10007346 DOI: 10.1103/physrevb.48.10587] [Citation(s) in RCA: 24] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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García A, Cohen ML. First-principles ionicity scales. II. Structural coordinates from atomic calculations. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 47:4221-4225. [PMID: 10006565 DOI: 10.1103/physrevb.47.4221] [Citation(s) in RCA: 20] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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