1
|
Padmanabhan P, Young SM, Henstridge M, Bhowmick S, Bhattacharya PK, Merlin R. Observation of standing waves of electron-hole sound in a photoexcited semiconductor. PHYSICAL REVIEW LETTERS 2014; 113:027402. [PMID: 25062229 DOI: 10.1103/physrevlett.113.027402] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/22/2014] [Indexed: 06/03/2023]
Abstract
Three-dimensional multicomponent plasmas composed of species with very different masses support a new branch of charge-density fluctuations known as acoustic plasmons. Here, we report on an ultrafast optical method to generate and probe coherent states of acoustic plasmons in a slab of GaAs, which relies on strong photoexcitation to create a large population of light electrons and heavy holes. Consistent with the random-phase-approximation theory, the data reveal standing plasma waves confined to these slabs, similar to those of conventional sound but with associated velocities that are significantly larger.
Collapse
Affiliation(s)
- P Padmanabhan
- Center for Photonics and Multiscale Nanomaterials, University of Michigan, Ann Arbor, Michigan 48109, USA and Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040, USA
| | - S M Young
- Center for Photonics and Multiscale Nanomaterials, University of Michigan, Ann Arbor, Michigan 48109, USA and Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040, USA
| | - M Henstridge
- Center for Photonics and Multiscale Nanomaterials, University of Michigan, Ann Arbor, Michigan 48109, USA and Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040, USA
| | - S Bhowmick
- Center for Photonics and Multiscale Nanomaterials, University of Michigan, Ann Arbor, Michigan 48109, USA and Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122, USA
| | - P K Bhattacharya
- Center for Photonics and Multiscale Nanomaterials, University of Michigan, Ann Arbor, Michigan 48109, USA and Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122, USA
| | - R Merlin
- Center for Photonics and Multiscale Nanomaterials, University of Michigan, Ann Arbor, Michigan 48109, USA and Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040, USA
| |
Collapse
|
2
|
Bowlan P, Kuehn W, Reimann K, Woerner M, Elsaesser T, Hey R, Flytzanis C. High-field transport in an electron-hole plasma: transition from ballistic to drift motion. PHYSICAL REVIEW LETTERS 2011; 107:256602. [PMID: 22243098 DOI: 10.1103/physrevlett.107.256602] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/01/2011] [Indexed: 05/31/2023]
Abstract
The time evolution of high-field carrier transport in bulk GaAs is studied with intense femtosecond THz pulses. While ballistic transport of electrons occurs in an n-type sample, a transition from ballistic to driftlike motion is observed in an electron-hole plasma. This onset of friction is due to the holes, which are heated by THz absorption. Theoretical calculations, which reproduce the data quantitatively, show that both electron-hole scattering and local-field effects in the electron-hole plasma are essential for the time-dependent friction.
Collapse
Affiliation(s)
- P Bowlan
- Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie, 12489 Berlin, Germany
| | | | | | | | | | | | | |
Collapse
|
3
|
Ledgerwood ML. Picosecond phonon dynamics and self-energy effects in highly photoexcited germanium. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 54:4926-4935. [PMID: 9986455 DOI: 10.1103/physrevb.54.4926] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
|
4
|
Prabhu SS, Vengurlekar AS. Hot-carrier energy-loss rates in alloy semiconductors. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 53:7815-7818. [PMID: 9982229 DOI: 10.1103/physrevb.53.7815] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
|
5
|
Giltrow M, Kozorezov A, Sahraoui-Tahar M, Wigmore JK, Davies JH, Stanley CR, Vogel B, Wilkinson CD. Observation of Plasmon-Optic Phonon Coupled Modes in GaAs/AlGaAs Resonant Tunneling Structures via Acoustic Phonon Decay Products. PHYSICAL REVIEW LETTERS 1995; 75:1827-1830. [PMID: 10060401 DOI: 10.1103/physrevlett.75.1827] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
|
6
|
Woerner M, Elsaesser T. Ultrafast thermalization of nonequilibrium holes in p-type tetrahedral semiconductors. PHYSICAL REVIEW. B, CONDENSED MATTER 1995; 51:17490-17498. [PMID: 9978772 DOI: 10.1103/physrevb.51.17490] [Citation(s) in RCA: 14] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
|
7
|
Sanborn BA. Nonequilibrium total-dielectric-function approach to the electron Boltzmann equation for inelastic scattering in doped polar semiconductors. PHYSICAL REVIEW. B, CONDENSED MATTER 1995; 51:14247-14255. [PMID: 9978352 DOI: 10.1103/physrevb.51.14247] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
|
8
|
Kash JA. Influence of the carrier distribution on carrier-carrier scattering in GaAs. PHYSICAL REVIEW. B, CONDENSED MATTER 1995; 51:4680-4683. [PMID: 9979325 DOI: 10.1103/physrevb.51.4680] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
|
9
|
Young JF, Gong T, Fauchet PM, Kelly PJ. Carrier-carrier scattering rates within nonequilibrium optically injected semiconductor plasmas. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 50:2208-2215. [PMID: 9976435 DOI: 10.1103/physrevb.50.2208] [Citation(s) in RCA: 18] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
|
10
|
Brill B, Heiblum M. Electron heating in GaAs due to electron-electron interactions. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 49:14762-14765. [PMID: 10010573 DOI: 10.1103/physrevb.49.14762] [Citation(s) in RCA: 15] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
|
11
|
Rossi F, Haas S, Kuhn T. Ultrafast relaxation of photoexcited carriers: The role of coherence in the generation process. PHYSICAL REVIEW LETTERS 1994; 72:152-155. [PMID: 10055589 DOI: 10.1103/physrevlett.72.152] [Citation(s) in RCA: 13] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
|
12
|
Kash JA. Carrier-carrier scattering: An experimental comparison of bulk GaAs and GaAs/AlxGa1-xAs quantum wells. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 48:18336-18339. [PMID: 10008489 DOI: 10.1103/physrevb.48.18336] [Citation(s) in RCA: 14] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
|