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For: Zhu W, Wang XH, Stoner BR, Ma GH, Kong HS, Braun MW, Glass JT. Diamond and beta -SiC heteroepitaxial interfaces: A theoretical and experimental study. Phys Rev B Condens Matter 1993;47:6529-6542. [PMID: 10004621 DOI: 10.1103/physrevb.47.6529] [Citation(s) in RCA: 20] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
Number Cited by Other Article(s)
1
Suzuki T, Argoitia A. Current Status of Heteroepitaxy of CVD Diamond. ACTA ACUST UNITED AC 1996. [DOI: 10.1002/pssa.2211540118] [Citation(s) in RCA: 17] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
2
Wensell MG, Zhang Z, Bernholc J. Fluorine-based mechanisms for atomic-layer-epitaxial growth on diamond (110). PHYSICAL REVIEW LETTERS 1995;74:4875-4878. [PMID: 10058621 DOI: 10.1103/physrevlett.74.4875] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
3
Riehl-Chudoba M, Soukiassian P, Jaussaud C, Dupont S. Direct and Rb-promoted SiOx/ beta -SiC(100) interface formation. PHYSICAL REVIEW. B, CONDENSED MATTER 1995;51:14300-14310. [PMID: 9978359 DOI: 10.1103/physrevb.51.14300] [Citation(s) in RCA: 10] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
4
Feng K, Yang J, Lin Z. Interface study of heteroepitaxial diamond films on silicon (001) substrates. PHYSICAL REVIEW. B, CONDENSED MATTER 1995;51:2264-2267. [PMID: 9978976 DOI: 10.1103/physrevb.51.2264] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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