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For: Lutz R, Lewis LJ. Stability of vacancies in amorphous silicon. Phys Rev B Condens Matter 1993;47:9896-9899. [PMID: 10005066 DOI: 10.1103/physrevb.47.9896] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
Number Cited by Other Article(s)
1
Lewis LJ, Nieminen RM. Defect-induced nucleation and growth of amorphous silicon. PHYSICAL REVIEW. B, CONDENSED MATTER 1996;54:1459-1462. [PMID: 9985972 DOI: 10.1103/physrevb.54.1459] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
2
Kim E, Lee YH. Electronic structure of vacancies in amorphous silicon. PHYSICAL REVIEW. B, CONDENSED MATTER 1995;51:5429-5432. [PMID: 9979424 DOI: 10.1103/physrevb.51.5429] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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