Thermal reactions of disilane on Si(100) studied by synchrotron-radiation photoemission

How dissociated fragments of multiatomic molecules saturate all active surface sites-H2O adsorption on the Si(100) surface

A fundamental question for the adsorption of any gas molecule on surfaces is its saturation coverage, whose value can provide a comprehensive examination for the adsorption mechanisms, dynamic and kinetic processes involved in the adsorption processes. This investigation utilizes scanning tunneling microscopy to visualize the H₂O adsorption processes on the Si(100) surface with a sub-monolayers (<0.05 ML) of chemically-reactive dangling bonds remaining after exposure to (1) a hydrogen atomic beam, (2) H₂O, and (3) Cl₂gases at room temperature. In all three cases, each of the remaining isolated single dangling bonds (sDB) adsorb and is passivated by either of the two dissociation fragments, the H or OH radical, to form a surface Si-H and Si-OH species. A new adsorption mechanism, termed 'dissociative and asynchronous chemisorption', is proposed for the observation presented herein. Upon approaching a sDB site, the H₂O molecule breaks apart into two fragments. One is chemisorbed to the sDB. The other attaches to the same or the neighboring passivated dimer to form a transition state of surface diffusion, which then diffuses on the mostly passivated surface and is eventually chemisorbed to another reactive site. In other words, the chemisorption reactions of the two fragments after dissociation occur at different and uncorrelated time and places. This adsorption mechanism suggests that a diffusion transition state can be an adsorption product in the first step of the dissociative adsorption processes.

Revisiting the vibrational spectra of silicon hydrides on Si(100)-(2x1) surface: What is on the surface when disilane dissociates?

Even though the decomposition of disilane on silicon surfaces has been extensively studied, the molecular mechanism for its decomposition has not been fully resolved. The general view motivated partly by spectroscopic data is that decomposition occurs through silicon-silicon bond dissociation although there is evidence from kinetics that silicon-hydrogen bond dissociation is important, and perhaps even dominant. Thus, we reexamine the assignment of the experimental vibrational peaks observed in disilane and silane adsorption in order to assess the evidence for the silicon hydride species that are formed during decomposition. We calculate the vibrational density of states for a number of silicon hydride species on the Si(100)-(2x1) surface using Car-Parrinello molecular dynamics. We obtain the calculated vibrational frequency in the adiabatic limit by extrapolating to zero orbital mass, calibrating our method using the well-established monohydride peak. The calculated vibrational frequencies of the monohydride are in good agreement experimental data. Our results show that the spectroscopic data for silicon hydrides does not preclude the occurrence of Si(2)H(5) on the surface thus providing evidence for silicon-hydrogen bond dissociation during disilane adsorption. Specifically, we find that an experimentally observed vibrational peak at 2150 cm(-1) that has generally been attributed to the trihydride SiH(3) is more likely to be due to Si(2)H(5). Our results also clear up the assignment of two peaks for monohydride species adsorbed at the edge of a growing terrace, and a peak for the dihydride species adsorbed in the interdimer configuration.

Molecular mechanisms for disilane chemisorption on Si(100)-(2 x 1)

The dissociative chemisorption of disilane is an important elementary process in the growth of silicon films. Although factors governing the rate of film growth such as surface temperature and disilane flux have been extensively studied experimentally by a large number of groups, the molecular mechanism for disilane adsorption is not well established. In particular, although it is generally held that chemisorption occurs via silicon-silicon bond dissociation, there have been a number of suggestions that silicon-hydrogen bond dissociation also occurs. We consider this issue in detail hereby examining a number of different paths that disilane can take to chemisorb. In addition to silicon-silicon bond dissociation paths, we examine three different mechanisms for silicon-hydrogen bond dissociation, for each path considering both adsorption at interdimer and intradimer sites. The calculated barriers are critically compared to experimental data. We conclude that silicon-hydrogen bond dissociation is likely, finding two zero barrier paths for chemisorption at interdimer sites, and a precursor-mediated path with a low barrier. We also find two precursor states, and show that each can lead to chemisorption via either silicon-silicon or silicon-hydrogen bond dissociation. Finally, we calculated the barriers for reaction of coadsorbed disilyl and hydrogen to form gas phase silane. Our calculations are performed using density-functional theory within a planewave ultrasoft pseudopotential methodology. We traced the reaction paths with the nudged-elastic band technique.