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Binggeli N, Ferrara P, Baldereschi A. Band Offsets In GaN/AlN and AlN/SiC Heterojunctions. ACTA ACUST UNITED AC 2011. [DOI: 10.1557/proc-482-911] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/13/2022]
Abstract
AbstractWe have investigated the structural trends of the band offsets in GaN/AlN and AlN/SiC heterojunctions using the ab initio pseudopotential method. In the zincblende GaN/AlN (100), (110), and (111) heterojunctions, the band offsets are relatively insensitive to interface orientation. Bulk strain effects, however, can modify the offset by as much as 0.4 eV in coherently strained AlN/GaN and GaN/AlN (100) junctions. The band alignment in the heterovalent AlN/SiC (110) and (111) heterojunctions depends on the geometry and stoichiometry of the interface. Valence band offsets as high as 2.5 eV are obtained for neutral AlN/SiC(11) junctions with a mixed Al/Si interface layer and as low as 1.3 eV with a mixed N/C layer. Atomic relaxation plays a major role in determining the offset. The change from zincblende (111) to wurtzite (0001) crystal structure in GaN/AlN and AlN/SiC heterojunctions selectively affects the conduction band offset, and has only a minor influence on the valence discontinuity.
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Kaiser U, Biskupek J, Muller D, Gärtner K, Schubert C. Properties of GeSi Nanocrystals Embedded in Hexagonal SiC. CRYSTAL RESEARCH AND TECHNOLOGY 2002. [DOI: 10.1002/1521-4079(200204)37:4<391::aid-crat391>3.0.co;2-y] [Citation(s) in RCA: 11] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
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Peressi M, Baldereschi A. Chemical and structural contributions to the valence-band offset at GaP/GaAs heterojunctions. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 54:5691-5695. [PMID: 9986532 DOI: 10.1103/physrevb.54.5691] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Tit N, Peressi M. Electronic structure of GaAs with an InAs (001) monolayer. PHYSICAL REVIEW. B, CONDENSED MATTER 1995; 52:10776-10779. [PMID: 9980167 DOI: 10.1103/physrevb.52.10776] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Peressi M, Baroni S. Bulk and interfacial strain in Si/Ge heterostructures. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 49:7490-7498. [PMID: 10009488 DOI: 10.1103/physrevb.49.7490] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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