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For: Dreybrodt J, Forchel A, Reithmaier JP. Optical properties of Ga0.8In0.2As/GaAs surface quantum wells. Phys Rev B Condens Matter 1993;48:14741-14744. [PMID: 10007915 DOI: 10.1103/physrevb.48.14741] [Citation(s) in RCA: 17] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
Number Cited by Other Article(s)
1
Mohammadi H, Roca RC, Kamiya I. Anomalous photoluminescence of InAs surface quantum dots: intensity enhancement and strain control by underlying quantum dots. NANOTECHNOLOGY 2022;33:415204. [PMID: 35793589 DOI: 10.1088/1361-6528/ac7ece] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/24/2022] [Accepted: 07/06/2022] [Indexed: 06/15/2023]
2
Lin A, Liang BL, Dorogan VG, Mazur YI, Tarasov GG, Salamo GJ, Huffaker DL. Strong passivation effects on the properties of an InAs surface quantum dot hybrid structure. NANOTECHNOLOGY 2013;24:075701. [PMID: 23358560 DOI: 10.1088/0957-4484/24/7/075701] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/01/2023]
3
Electrolyte electroreflectance spectroscopy studies on the interfacial behavior of the near-surface In0.15Ga0.85As/GaAs quantum well electrode|non-aqueous electrolyte. J Electroanal Chem (Lausanne) 2001. [DOI: 10.1016/s0022-0728(00)00477-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/23/2022]
4
Liu Y, Xiao XR, Zeng YP, Pan D. Tunneling Behaviors of Photogenerated Electrons in In0.15Ga0.85As/GaAs Quantum Well Photoelectrodes. J Phys Chem B 1999. [DOI: 10.1021/jp9910542] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
5
Tikhodeev SG, Gippius NA, Yablonskii AL, Dzyubenko AB, Kulik LV, Kulakovskii VD, Forchel A. Excitons in Near Surface Quantum Wells: Local Probe of Semiconductor/Vacuum Surface. ACTA ACUST UNITED AC 1997. [DOI: 10.1002/1521-396x(199711)164:1<179::aid-pssa179>3.0.co;2-9] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/05/2022]
6
Dreybrodt J, Daiminger F, Reithmaier JP, Forchel A. Dynamics of carrier-capture processes in GaxIn1-xAs/GaAs near-surface quantum wells. PHYSICAL REVIEW. B, CONDENSED MATTER 1995;51:4657-4660. [PMID: 9979319 DOI: 10.1103/physrevb.51.4657] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
7
Fafard S. Bound states of near-surface multiple-quantum-well structures: Evolution of the Tamm states with the cap-layer thickness. PHYSICAL REVIEW. B, CONDENSED MATTER 1994;50:1961-1964. [PMID: 9976391 DOI: 10.1103/physrevb.50.1961] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
8
Gréus C, Spiegel R, Knipp PA, Reinecke TL, Faller F, Forchel A. Photoluminescence excitation study of lateral-subband structure in barrier-modulated In0.09Ga0.91As quantum wires. PHYSICAL REVIEW. B, CONDENSED MATTER 1994;49:5753-5756. [PMID: 10011545 DOI: 10.1103/physrevb.49.5753] [Citation(s) in RCA: 17] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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