1
|
Phong TC, Minh LN, Hien ND. Comparison of electron scattering by acoustic-phonons in two types of quantum wells with GaAs and GaN materials. NANOSCALE ADVANCES 2024; 6:832-845. [PMID: 38298586 PMCID: PMC10825907 DOI: 10.1039/d3na00274h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/25/2023] [Accepted: 10/16/2023] [Indexed: 02/02/2024]
Abstract
In this work, we report a detailed comparison of electron-acoustic-phonon (EAP) interaction strength in symmetric (parabolic) and asymmetric (semi-parabolic) quantum-wells (QWs) for both GaAs and GaN materials. The operator projection method will be utilized to calculate the acoustic-phonon-assisted cyclotron resonance (CR) absorption power. The EAP interaction strength is determined by measuring the full width at half maximum (FWHM) of the acoustic-phonon-assisted CR absorption peak based on the profile of the curve describing the dependence of the acoustic-phonon-assisted CR absorption power on the photon energy. The studied result reveals that the EAP interaction strengths in the symmetric and asymmetric QWs are functions of the electron temperature (ET), external magnetic field (EMF), and confined potential frequency (CPF). Namely, the larger the ET, the EMF, and the CPF, the stronger the EAP interaction strengths in the symmetric and asymmetric QWs are for both GaN and GaAs materials. More importantly, the obtained result demonstrates that under the influence of the structural (CPF) and external (ET and EMF) parameters, the EAP interaction strength in the symmetric QW is always much stronger than that in the asymmetric QW for both GaN and GaAs materials. Simultaneously, the EAP interaction strength in the GaN material is much stronger than that in the GaAs material for both the symmetric and asymmetric QWs.
Collapse
Affiliation(s)
- Tran Cong Phong
- Atomic Molecular and Optical Physics Research Group, Institute for Advanced Study in Technology, Ton Duc Thang University Ho Chi Minh City Vietnam
- Faculty of Electrical and Electronics Engineering, Ton Duc Thang University Ho Chi Minh City Vietnam
| | - Le Ngoc Minh
- Faculty of Physics, University of Sciences, Hue University Hue City Vietnam
| | - Nguyen Dinh Hien
- Institute of Research and Development, Duy Tan University Da Nang Vietnam
- School of Engineering & Technology, Duy Tan University Da Nang Vietnam
| |
Collapse
|
2
|
Liu XL, Liu HN, Wu JB, Wu HX, Zhang T, Zhao WQ, Tan PH. Filter-based ultralow-frequency Raman measurement down to 2 cm -1 for fast Brillouin spectroscopy measurement. THE REVIEW OF SCIENTIFIC INSTRUMENTS 2017; 88:053110. [PMID: 28571441 DOI: 10.1063/1.4983144] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Simultaneous Stokes and anti-Stokes ultralow-frequency (ULF) Raman measurement down to ∼2 cm-1 or 60 GHz is realized by a single-stage spectrometer in combination with volume-Bragg-grating-based notch filters. This system reveals its excellent performance by probing Brillouin signal of acoustic phonons in silicon, germanium, gallium arsenide, and gallium nitride. The deduced sound velocity and elastic constants are in good accordance with previous results determined by various methods. This system can shorten the integration time of the Brillouin signal with a good signal-to-noise ratio by more than 2000-fold compared to a Fabry-Perot interferometer (FPI). This study shows how a filter-based ULF Raman system can be used to reliably achieve Brillouin spectroscopy for condensed materials with high sensitivity and high signal-to-noise ratio, stimulating fast Brillouin spectrum measurements to probe acoustic phonons in semiconductors.
Collapse
Affiliation(s)
- Xue-Lu Liu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - He-Nan Liu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Jiang-Bin Wu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Han-Xu Wu
- Beijing Key Lab for Precision Optoelectronic Measurement Instrument and Technology, School of Optoelectronics, Beijing Institute of Technology, Beijing 100081, China
| | - Tao Zhang
- Beijing Key Lab for Precision Optoelectronic Measurement Instrument and Technology, School of Optoelectronics, Beijing Institute of Technology, Beijing 100081, China
| | - Wei-Qian Zhao
- Beijing Key Lab for Precision Optoelectronic Measurement Instrument and Technology, School of Optoelectronics, Beijing Institute of Technology, Beijing 100081, China
| | - Ping-Heng Tan
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| |
Collapse
|
3
|
Picosecond x-ray strain rosette reveals direct laser excitation of coherent transverse acoustic phonons. Sci Rep 2016; 6:19140. [PMID: 26751616 PMCID: PMC4707471 DOI: 10.1038/srep19140] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/12/2015] [Accepted: 12/07/2015] [Indexed: 11/08/2022] Open
Abstract
Using a strain-rosette, we demonstrate the existence of transverse strain using time-resolved x-ray diffraction from multiple Bragg reflections in laser-excited bulk gallium arsenide. We find that anisotropic strain is responsible for a considerable fraction of the total lattice motion at early times before thermal equilibrium is achieved. Our measurements are described by a new model where the Poisson ratio drives transverse motion, resulting in the creation of shear waves without the need for an indirect process such as mode conversion at an interface. Using the same excitation geometry with the narrow-gap semiconductor indium antimonide, we detected coherent transverse acoustic oscillations at frequencies of several GHz.
Collapse
|
4
|
Lanzillotti-Kimura ND, Fainstein A, Jusserand B. Towards GHz-THz cavity optomechanics in DBR-based semiconductor resonators. ULTRASONICS 2015; 56:80-89. [PMID: 24962289 DOI: 10.1016/j.ultras.2014.05.017] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/12/2014] [Revised: 04/28/2014] [Accepted: 05/23/2014] [Indexed: 06/03/2023]
Abstract
Resonators based on acoustic distributed Bragg reflectors (DBRs) were optimized to work in the GHz-THz regime, and grown by molecular beam epitaxy. We show that in structures made of GaAlAs alloys a simultaneous optimal confinement of light in the visible range and phonons in the tens of GHz range can be achieved. We report time resolved differential optical reflectivity experiments performed with fs-ps laser pulses. The experimental results are in excellent agreement with simulations based on standard transfer matrix methods. The resonant behavior of the photoelastic coefficient is discussed. The perfect optic-acoustic mode overlapping, added to a strongly enhanced coupling mechanism, implies that these DBR-based cavities could be the base of highly efficient optomechanical resonators.
Collapse
Affiliation(s)
| | - A Fainstein
- Centro Atómico Bariloche & Instituto Balseiro, C.N.E.A., 8400 S.C. de Bariloche, R.N., Argentina.
| | - B Jusserand
- Institut des NanoSciences de Paris, UMR 7588 C.N.R.S., Université Pierre et Marie Curie, 75015 Paris, France
| |
Collapse
|
5
|
Scherbakov AV, Bombeck M, Jäger JV, Salasyuk AS, Linnik TL, Gusev VE, Yakovlev DR, Akimov AV, Bayer M. Picosecond opto-acoustic interferometry and polarimetry in high-index GaAs. OPTICS EXPRESS 2013; 21:16473-16485. [PMID: 23938498 DOI: 10.1364/oe.21.016473] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
By means of a metal opto-acoustic transducer we generate quasi-longitudinal and quasi-transverse picosecond strain pulses in a (311)-GaAs substrate and monitor their propagation by picosecond acoustic interferometry. By probing at the sample side opposite to the transducer the signals related to the compressive and shear strain pulses can be separated in time. In addition to conventional monitoring of the reflected probe light intensity we monitor also the polarization rotation of the optical probe beam. This polarimetric technique results in improved sensitivity of detection and provides comprehensive information about the elasto-optical anisotropy. The experimental observations are in a good agreement with a theoretical analysis.
Collapse
Affiliation(s)
- A V Scherbakov
- Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021 St Petersburg, Russia.
| | | | | | | | | | | | | | | | | |
Collapse
|
6
|
Fainstein A, Lanzillotti-Kimura ND, Jusserand B, Perrin B. Strong optical-mechanical coupling in a vertical GaAs/AlAs microcavity for subterahertz phonons and near-infrared light. PHYSICAL REVIEW LETTERS 2013; 110:037403. [PMID: 23373951 DOI: 10.1103/physrevlett.110.037403] [Citation(s) in RCA: 13] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/06/2012] [Indexed: 06/01/2023]
Abstract
We show that distributed Bragg reflector GaAs/AlAs vertical cavities designed to confine photons are automatically optimal to confine phonons of the same wavelength, strongly enhancing their interaction. We study the impulsive generation of intense coherent and monochromatic acoustic phonons by following the time evolution of the elastic strain in picosecond-laser experiments. Efficient optical detection is assured by the strong phonon backaction on the high-Q optical cavity mode. Large optomechanical factors are reported (~THz/nm range). Pillar cavities based in these structures are predicted to display picogram effective masses, almost perfect sound extraction, and threshold powers for the stimulated emission of phonons in the range μW-mW, opening the way for the demonstration of phonon "lasing" by parametric instability in these devices.
Collapse
Affiliation(s)
- A Fainstein
- Instituto Balseiro and Centro Atómico Bariloche, CNEA, Bariloche, Río Negro, Argentina
| | | | | | | |
Collapse
|
7
|
Milekhin A, Yeryukov N, Toropov A, Dmitriev D, Sheremet E, Zahn DRT. Raman scattering of InAs/AlAs quantum dot superlattices grown on (001) and (311)B GaAs surfaces. NANOSCALE RESEARCH LETTERS 2012; 7:476. [PMID: 22916827 PMCID: PMC3506502 DOI: 10.1186/1556-276x-7-476] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/18/2012] [Accepted: 08/03/2012] [Indexed: 06/01/2023]
Abstract
We present a comparative analysis of Raman scattering by acoustic and optical phonons in InAs/AlAs quantum dot superlattices grown on (001) and (311)B GaAs surfaces. Doublets of folded longitudinal acoustic phonons up to the fifth order were observed in the Raman spectra of (001)- and (311)B-oriented quantum dot superlattices measured in polarized scattering geometries. The energy positions of the folded acoustic phonons are well described by the elastic continuum model. Besides the acoustic phonons, the spectra display features related to confined transverse and longitudinal optical as well as interface phonons in quantum dots and spacer layers. Their frequency positions are discussed in terms of phonon confinement, elastic stress, and atomic intermixing.
Collapse
Affiliation(s)
- Alexander Milekhin
- Institute of Semiconductor Physics, Lavrentjevav 13, Novosibirsk 630090, Russia
- Novosibirsk State University, Pirogovstr 2, Novosibirsk 630090, Russia
| | - Nikolay Yeryukov
- Institute of Semiconductor Physics, Lavrentjevav 13, Novosibirsk 630090, Russia
| | - Alexander Toropov
- Institute of Semiconductor Physics, Lavrentjevav 13, Novosibirsk 630090, Russia
| | - Dmitry Dmitriev
- Institute of Semiconductor Physics, Lavrentjevav 13, Novosibirsk 630090, Russia
| | - Evgeniya Sheremet
- Semiconductor Physics, Chemnitz University of Technology, Chemnitz, D-09107, Germany
| | - Dietrich RT Zahn
- Semiconductor Physics, Chemnitz University of Technology, Chemnitz, D-09107, Germany
| |
Collapse
|
8
|
Ipatova IP, Malyshkin VG, Shchukin VA. Compositional elastic domains in epitaxial layers of phase-separating semiconductor alloys. ACTA ACUST UNITED AC 2006. [DOI: 10.1080/01418639408240230] [Citation(s) in RCA: 15] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]
Affiliation(s)
- I. P. Ipatova
- a A. F. Ioffe Physical Technical Institute , St Petersburg , 194021 , Russia
| | - V. G. Malyshkin
- a A. F. Ioffe Physical Technical Institute , St Petersburg , 194021 , Russia
| | - V. A. Shchukin
- a A. F. Ioffe Physical Technical Institute , St Petersburg , 194021 , Russia
| |
Collapse
|
9
|
Popovic ZV, Vukmirovic MB, Raptis YS, Anastassakis E, Nötzel R, Ploog K. Folded phonons from lateral periodicity in (311) GaAs/AlAs corrugated superlattices. PHYSICAL REVIEW. B, CONDENSED MATTER 1995; 52:5789-5794. [PMID: 9981768 DOI: 10.1103/physrevb.52.5789] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
|
10
|
Ribeiro E, Cerdeira F, Cantarero A. Experimental evidence of anisotropy in the E0 and E1 optical spectra of corrugated GaAs/AlAs quantum-wire superlattices. PHYSICAL REVIEW. B, CONDENSED MATTER 1995; 51:7890-7893. [PMID: 9977378 DOI: 10.1103/physrevb.51.7890] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
|
11
|
Yu S, Kim KW, Stroscio MA, Iafrate GJ. Electron-acoustic-phonon scattering rates in cylindrical quantum wires. PHYSICAL REVIEW. B, CONDENSED MATTER 1995; 51:4695-4698. [PMID: 9979329 DOI: 10.1103/physrevb.51.4695] [Citation(s) in RCA: 17] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
|
12
|
Yu S, Kim KW, Stroscio MA, Iafrate GJ, Ballato A. Electron-acoustic-phonon scattering rates in rectangular quantum wires. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 50:1733-1738. [PMID: 9976363 DOI: 10.1103/physrevb.50.1733] [Citation(s) in RCA: 12] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
|
13
|
Ikonic Z, Srivastava GP, Inkson JC. Electronic structure of. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 49:10749-10752. [PMID: 10009907 DOI: 10.1103/physrevb.49.10749] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
|
14
|
Popovic ZV, Richter E, Spitzer J, Cardona M, Shields AJ, Nötzel R, Ploog K. Phonon properties of (311) GaAs/AlAs superlattices. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 49:7577-7583. [PMID: 10009501 DOI: 10.1103/physrevb.49.7577] [Citation(s) in RCA: 10] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
|