Complex dielectric function of amorphous diamond films deposited by pulsed-excimer-laser ablation of graphite

Band gap measurement by nano-beam STEM with small off-axis angle transmission electron energy loss spectroscopy (TEELS)

An energy band gap measurement method based on nano-beam STEM with small off-axis angle valence band transmission electron energy loss spectroscopy (TEELS) is reported. The effect of multiple scattering event is removed by self-convolution method to obtain a single scattering loss function and a dielectric function is calculated from the single scattering valence band energy loss function through Kramers-Kronig (K-K) analysis. Optical band gaps are extracted from energy loss spectra and the imaginary part of the dielectric functions for crystalline and amorphous SiO_x, SiN_x, and SiON through linear fitting of on-set regions yielding results that are independent of sample thickness. The TEELS band gap data are consistent with those obtained from reflection electron energy loss spectroscopy (REELS) measurements.

High reflectance ta-C coatings in the extreme ultraviolet

The extreme ultraviolet (EUV) reflectance of amorphous tetrahedrally coordinated carbon films (ta-C) prepared by filtered cathodic vacuum arc was measured in the 30-188-nm range at near normal incidence. The measured reflectance of films grown with average ion energies in the ~70-140-eV range was significantly larger than the reflectance of a C film grown with average ion energy of ~20 eV and of C films deposited by sputtering or evaporation. The difference is attributed to a large proportion of sp3 atom bonding in the ta-C film. This high reflectance is obtained for films deposited onto room-temperature substrates. The reflectance of ta-C films is higher than the standard single-layer coating materials in the EUV spectral range below 130 nm. A self-consistent set of optical constants of ta-C films was obtained with the Kramers-Krönig analysis using ellipsometry measurements in the 190-950 nm range and the EUV reflectance measurements. These optical constants allowed calculating the EUV reflectance of ta-C films at grazing incidence for applications such as free electron laser mirrors.

Structural and Electrical Characterization of Highly Tetrahedral-Coordinated Diamond-Like Carbon Films Grown by Pulsed-Laser Deposition

Highly tetrahedral-coordinated-amorphous-carbon (a-tC) films deposited by pulsed-laser deposition (PLD) on silicon substrates are studied. These films are grown at room-temperatures in a high-vacuum ambient. a-tC films grown in this manner have demonstrated stability to temperatures in excess of T = 1000°C, more than sufficient for any post-processing treatment or application. Film surfaces are optically smooth as determined both visually and by atomic-force microscopy. PLD growth parameters can be controlled to produce films with a range of sp2 - sp3 carbon-carbon bond ratios. Films with the highest yield of sp3 C-C bonds have high resistivity, with a dielectric permittivity constant s σ 4, measured capacitively at low frequencies (1 – 100 kHz). These a-tC films are p-type semiconductors as grown. Schottky barrier diode structures have been fabricated.

Amorphous Diamond Films Deposited by Pulsed-Laser Ablation: the Optimum Carbon-Ion Kinetic Energy and Effects of Laser Wavelength

A systematic study has been made of changes in the bonding and optical properties of hydrogen-free tetrahedral amorphous carbon (ta-C) films, as a function of the kinetic energy of the incident carbon ions measured under film-deposition conditions. Ion probe measurements of the carbon ion kinetic energies produced by ArF and KrF laser ablation of graphite are compared under identical beam-focusing conditions. Much higher C+ kinetic energies are produced by ArF-laser ablation than by KrF for any given fluence and spot size. Electron energy loss spectroscopy and scanning ellipsometry measurements of the sp3 bonding fraction, plasmon energy, and optical properties reveal a well-defined optimum kinetic energy of 90 eV to deposit ta-C films having the largest sp3 fraction and the widest optical (Tauc) energy gap (equivalent to minimum near-gap optical absorption). Tapping-mode atomic force microscope measurements show that films deposited at near-optimum kinetic energy are extremely smooth, with rms roughness of only ~ 1 Å over distances of several hundred nm, and are relatively free of particulates.

Species-resolved imaging and gated photon counting Spectroscopy of laser ablation plume dynamics During krf- and arf-laser pld of amorphous diamond films

Gated photon counting spectroscopy and species-resolved ICCD photography have been applied to study the weak plasma luminescence which occurs following the propagation of the initial ablation plume in vacuum and during the ‘rebound’ of the plume with a substrate during pulsed laser deposition of amorphous diamond. These time- and spatially-resolved spectroscopic techniques were required in order to investigate notable differences between amorphous diamond-like carbon films formed by pulsed laser deposition from ArF (193 nm) and KrF (248 nm) irradiation of pyrolytic graphite in vacuum. Three principal regions of plume emission have been characterized: (1) a bright luminescent ball (v ∼3-5 cm/(μ.s) displaying nearly entirely C+ emission which appears to result from laser interaction with the initial ejecta, (2) a spherical ball of emission (v ∼1 cm/μs) displaying neutral carbon atomic emission lines and, at early times, jets of excited C2, and (3) a well-defined region of broadband emission (v ∼ 0.3 cm/μs) near the target surface first containing emission bands from C2, then weak, continuum emission thought to result from C3 and higher clusters and/or blackbody emission from hot clusters or nanoparticles. For both lasers, the measurements reveal an explosive interaction within the plume which results in a variety of new gas dynamic observations in vacuum:. These include (a) generation of instabilities or jets, (b) confinement of a residual part of the plume near the pellet surface, (c) cluster formation in the collisional, confined regions of the plume, and (d) reflection of the confined region backward to splash and redeposit on the pellet surface. Evidence for gas-phase formation of these clusters in vacuum is indicated from the dynamic evolution of the same cluster bands observed during the collision of the plume with the substrate surface during film growth. Addition of background gases strongly enhances the third (cluster) component, in accordance with plume-splitting phenomena. The combination of sensitive imaging and photon-counting diagnostic techniques permit an understanding of the importance of gas dynamic effects, such as clustering, on the time-of-flight distributions of species arriving during the deposition of thin films in both vacuum and background gases.

Raman Spectroscopy of Amorphous Carbon

Amorphous carbon is an elemental form of carbon with low hydrogen content, which may be deposited in thin films by the impact of high energy carbon atoms or ions. It is structurally distinct from the more well-known elemental forms of carbon, diamond and graphite. It is distinct in physical and chemical properties from the material known as diamond-like carbon, a form which is also amorphous but which has a higher hydrogen content, typically near 40 atomic percent. Amorphous carbon also has distinctive Raman spectra, whose patterns depend, through resonance enhancement effects, not only on deposition conditions but also on the wavelength selected for Raman excitation. This paper provides an overview of the Raman spectroscopy of amorphous carbon and describes how Raman spectral patterns correlate to film deposition conditions, physical properties and molecular level structure.

Synthesis of Novel Thin-Film Materials by Pulsed Laser Deposition

Pulsed laser deposition (PLD) is a conceptually and experimentally simple yet highly versatile tool for thin-film and multilayer research. Its advantages for the film growth of oxides and other chemically complex materials include stoichiometric transfer, growth from an energetic beam, reactive deposition, and inherent simplicity for the growth of multilayered structures. With the use of PLD, artificially layered materials and metastable phases have been created and their properties varied by control of the layer thicknesses. In situ monitoring techniques have provided information about the role of energetic species in the formation of ultrahard phases and in the doping of semiconductors. Cluster-assembled nanocrystalline and composite films offer opportunities to control and produce new combinations of properties with PLD.