Track formation in SiO2 quartz and the thermal-spike mechanism

Effects of swift heavy ions on metal nanoparticles embedded in silica: Using linearly polarized light to monitor the elongation kinetics

The elongation of metallic nanoparticles (NPs) embedded in a dielectric matrix after irradiation with swift heavy ions is a phenomenon that has been known for several years. However, the precise mechanism behind this deformation process is still not fully understood, primarily due to the dearth of information during intermediate stages of deformation. In this study, we report the continuation of our previous work [Peña-Rodríguez et al., Sci. Rep. 7(1), 922 (2017)], exploiting the strong dependence of the localized surface plasmon resonance on the aspect ratio of elongated metal NPs to study the elongation kinetics in situ. In situ optical absorption spectra were measured using a polarizing beam splitter to separate the longitudinal and transverse plasmon modes of the anisotropic NPs. Then, the detailed geometrical and compositional parameters were determined from a fit of these spectra. The use of linearly polarized light allowed for a more accurate analysis of the elongation kinetics, particularly useful in the first stages, where longitudinal and transverse modes overlap.

Latent ion tracks were finally observed in diamond

Injecting high-energy heavy ions in the electronic stopping regime into solids can create cylindrical damage zones called latent ion tracks. Although these tracks form in many materials, none have ever been observed in diamond, even when irradiated with high-energy GeV uranium ions. Here we report the first observation of ion track formation in diamond irradiated with 2-9 MeV C60 fullerene ions. Depending on the ion energy, the mean track length (diameter) changed from 17 (3.2) nm to 52 (7.1) nm. High resolution scanning transmission electron microscopy (HR-STEM) indicated the amorphization in the tracks, in which π-bonding signal from graphite was detected by the electron energy loss spectroscopy (EELS). Since the melting transition is not induced in diamond at atmospheric pressure, conventional inelastic thermal spike calculations cannot be applied. Two-temperature molecular dynamics simulations succeeded in the reproduction of both the track formation under MeV C60 irradiations and the no-track formation under GeV monoatomic ion irradiations.

Ion Tracks and Nanohillocks Created in Natural Zirconia Irradiated with Swift Heavy Ions

Natural monoclinic zirconia (baddeleyite) was irradiated with 340 MeV Au ions, and the irradiation-induced nanostructures (i.e., ion tracks and nanohillocks) were observed using transmission electron microscopy. The diameter of the nanohillocks was approximately 10 nm, which was similar to the maximum molten region size calculated using the analytical thermal spike model. Ion tracks were imaged as strained regions that maintained their crystalline structure. The cross-sections of most of the ion tracks were imaged as rectangular contrasts as large as 10 nm. These results strongly indicated that the molten region was recrystallized anisotropically, reflecting the lattice structure. Furthermore, low-density track cores were formed in the center of the ion tracks. The formation of low-density track cores can be attributed to the ejection of molten matter toward the surface. A comparison of the ion tracks in the synthetic zirconia nanoparticles and those in larger natural zirconia samples showed that the interface between the strained track contrast and the matrix was less clear in the former than in the latter. These findings suggest that the recrystallization process was affected by the size of the irradiated samples.

Tuning LSPR of Thermal Spike-Induced Shape-Engineered Au Nanoparticles Embedded in Si3N4 Thin-Film Matrix for SERS Applications

While gold nanoparticles (Au NPs) are widely used as surface-enhanced Raman spectroscopy (SERS) substrates, their agglomeration and dynamic movement under laser irradiation result in the major drawback in SERS applications, viz., the repeatability of SERS signals. We tune the optical and structural properties of size- and shape-modified Au NPs embedded in a thin silicon nitride (Si3N4) matrix by intense electronic excitation with swift heavy ion (SHI) irradiation with the aim of overcoming this classical SERS disadvantage. We demonstrate the shape evolution of a single layer of Au NPs inserted between amorphous Si3N4 thin films under fluences of 120 MeV Au9+ ions ranging between 1 × 1011 and 1 × 1013 ions cm-2. This shape modification results in the gradual blue shift of the localized surface plasmon resonance (LSPR) dip until 1 × 1012 ions/cm2 and then a sudden diminishment at 1 × 1013 ions/cm2. Finite domain time difference (FDTD) simulations further justify our experimental optical spectra. The dynamical NP aggregation and dissolution, in addition to NP elongation and deformation at different fluences, are noted from 2D grazing incidence small-angle X-ray scattering (GISAXS) profiles, as well as cross-sectional transmission electron microscopy (X-TEM). The systematic shape evolution of metal NPs embedded in the insulating matrix is shown to be due to thermal spike-induced localized melting and a localized pressure hike upon SHI irradiation. Utilizing this specific control over the characteristics of Au NPs, viz., shape, size, interparticle gap, and corresponding optical response via SHI irradiation, we demonstrate their applications as very stable SERS substrates, where the separation between NPs and analyte does not alter under laser illumination. Thus, these irradiated SERS active substrates with controlled NP size and gap provide the optimal conditions for creating localized electromagnetic hotspots that amplify the SERS signals, which do not alter with time or laser exposure. We found that the film irradiated with 1 × 1011 exhibits the highest SERS intensity due to its optimal NP size distribution and shape. Thus, not only our study provides a SERS substrate for stable and repeatable signals but also the understanding depicted here opens new research avenues in designing SERS substrates, photovoltaics, optoelectronic devices, etc. with ion beam irradiation.

Incident Angle Dependent Formation of Ion Tracks in Quartz Crystal with C60+ Ions: Big Ions in Small Channels

Quartz (SiO2) crystals possess intrinsic columnar pores perpendicular to (0001) surfaces, consisting of three- and six-membered ring (3MR and 6MR) structures of Si and O atoms. The diameters of the larger pores, i.e., 6 MRs, are ~0.49 nm, while the diameters of fullerene (C60) ions are 0.7 nm, i.e., larger than either type of the pores. Transmission electron microscopy observation evidenced approximately two times longer ion tracks in the channeling condition, i.e., 0° incidence to (0001) surface, than an off-channeling condition, i.e., 7° incidence in this case, under 6 MeV C60 ion injection. The track length at the 0° incidence decreases more steeply than that at the 7° incidence with decreasing the energy from 6 MeV to 1 MeV. Finally, the track lengths at the 0° and 7° incidences become comparable, i.e., the channeling-like effect disappears at 1 MeV irradiation. This study experimentally indicates that the channeling-like effect of C60 ions is induced in quartz crystals, while the sizes of the channels are smaller than the C60 ions.

Modification of SiO2, ZnO, Fe2O3 and TiN Films by Electronic Excitation under High Energy Ion Impact

It has been known that the modification of non-metallic solid materials (oxides, nitrides, etc.), e.g., the formation of tracks, sputtering representing atomic displacement near the surface and lattice disordering are induced by electronic excitation under high-energy ion impact. We have investigated lattice disordering by the X-ray diffraction (XRD) of SiO2, ZnO, Fe2O3 and TiN films and have also measured the sputtering yields of TiN for a comparison of lattice disordering with sputtering. We find that both the degradation of the XRD intensity per unit ion fluence and the sputtering yields follow the power-law of the electronic stopping power and that these exponents are larger than unity. The exponents for the XRD degradation and sputtering are found to be comparable. These results imply that similar mechanisms are responsible for the lattice disordering and electronic sputtering. A mechanism of electron–lattice coupling, i.e., the energy transfer from the electronic system into the lattice, is discussed based on a crude estimation of atomic displacement due to Coulomb repulsion during the short neutralization time (~fs) in the ionized region. The bandgap scheme or exciton model is examined.

Investigation of Ion Irradiation Effects in Silicon and Graphite Produced by 23 MeV I Beam

Both silicon and graphite are radiation hard materials with respect to swift heavy ions like fission fragments and cosmic rays. Recrystallisation is considered to be the main mechanism of prompt damage anneal in these two materials, resulting in negligible amounts of damage produced, even when exposed to high ion fluences. In this work we present evidence that these two materials could be susceptible to swift heavy ion irradiation effects even at low energies. In the case of silicon, ion channeling and electron microscopy measurements reveal significant recovery of pre-existing defects when exposed to a swift heavy ion beam. In the case of graphite, by using ion channeling, Raman spectroscopy and atomic force microscopy, we found that the surface of the material is more prone to irradiation damage than the bulk.

Etched ion tracks in amorphous SiO2 characterized by small angle x-ray scattering: influence of ion energy and etching conditions

Small angle x-ray scattering was used to study the morphology of conical structures formed in thin films of amorphous SiO₂. Samples were irradiated with 1.1 GeV Au ions at the GSI UNILAC in Darmstadt, Germany, and with 185, 89 and 54 MeV Au ions at the Heavy Ion Accelerator Facility at ANU in Canberra, Australia. The irradiated material was subsequently etched in HF using two different etchant concentrations over a series of etch times to reveal conically shaped etched channels of various sizes. Synchrotron based SAXS measurements were used to characterize both the radial and axial ion track etch rates with unprecedented precision. The results show that the ion energy has a significant effect on the morphology of the etched channels, and that at short etch times resulting in very small cones, the increased etching rate of the damaged region in the radial direction with respect to the ion trajectory is significant.

Tuning of the Thermoelectric Properties of Bi2Te3 Nanorods Using Helium Ion Irradiation

The present study reports an enhancement of the power factor of Bi2Te3 nanorods NRs) by helium (He+) ion irradiation. High-resolution transmission electron microscopy studies revealed the formation of amorphous layers on the surface of the NRs at the high ion fluence. This amorphous nature is due to the accumulation of migrating point defect clusters at the surface of the NRs. Raman scattering experiments provide further insight to the observed structural modifications. At higher ion fluence, impurity-dominated scattering processes significantly enhance the value of the Seebeck coefficient of Bi2Te3 NRs. The He+ ion irradiation up to the ion fluence of 1 × 1016 ions/cm2 improves the thermoelectric transport properties with the highest power factor, 8.2 μW/m K2, at 390 K. Further investigations may result in the possibility of fabricating the Bi2Te3 NRs as thermoelectric generators with a high power factor for space applications.

Direct atomic fabrication and dopant positioning in Si using electron beams with active real-time image-based feedback

Semiconductor fabrication is a mainstay of modern civilization, enabling the myriad applications and technologies that underpin everyday life. However, while sub-10 nanometer devices are already entering the mainstream, the end of the Moore's law roadmap still lacks tools capable of bulk semiconductor fabrication on sub-nanometer and atomic levels, with probe-based manipulation being explored as the only known pathway. Here we demonstrate that the atomic-sized focused beam of a scanning transmission electron microscope can be used to manipulate semiconductors such as Si on the atomic level, inducing growth of crystalline Si from the amorphous phase, reentrant amorphization, milling, and dopant front motion. These phenomena are visualized in real-time with atomic resolution. We further implement active feedback control based on real-time image analytics to automatically control the e-beam motion, enabling shape control and providing a pathway for atom-by-atom correction of fabricated structures in the near future. These observations open a new epoch for atom-by-atom manufacturing in bulk, the long-held dream of nanotechnology.

Radiation-induced disorder in compressed lanthanide zirconates

The effects of swift heavy ion irradiation-induced disordering on the behavior of lanthanide zirconate compounds (Ln₂Zr₂O₇ where Ln = Sm, Er, or Nd) at high pressures are investigated. After irradiation with 2.2 GeV ¹⁹⁷Au ions, the initial ordered pyrochlore structure (Fd3[combining macron]m) transformed to a defect-fluorite structure (Fm3[combining macron]m) in Sm₂Zr₂O₇ and Nd₂Zr₂O₇. For irradiated Er₂Zr₂O₇, which has a defect-fluorite structure, ion irradiation induces local disordering by introducing Frenkel defects despite retention of the initial structure. When subjected to high pressures (>29 GPa) in the absence of irradiation, all of these compounds transform to a cotunnite-like (Pnma) phase, followed by sluggish amorphization with further compression. However, if these compounds are irradiated prior to compression, the high pressure cotunnite-like phase is not formed. Rather, they transform directly from their post-irradiation defect-fluorite structure to an amorphous structure upon compression (>25 GPa). Defects and disordering induced by swift heavy ion irradiation alter the transformation pathways by raising the energetic barriers for the transformation to the high pressure cotunnite-like phase, rendering it inaccessible. As a result, the high pressure stability field of the amorphous phase is expanded to lower pressures when irradiation is coupled with compression. The responses of materials in the lanthanide zirconate system to irradiation and compression, both individually and in tandem, are strongly influenced by the specific lanthanide composition, which governs the defect energetics at extreme conditions.

Evidence of local structural influence on the shape driven magnetic anisotropy in electronically excited Ni nanoparticles embedded in SiO2 matrix

The reliance of modern electronic era on ultrafast data recording has made the search for novel tools to tune nano-scale magnetic-anisotropy (MA) never-ending. We demonstrate a strong correlation between the spin-spin interactions, local atomic structure and the MA of Ni nanoparticles (NPs) embedded inside SiO₂ matrix under swift heavy ion (SHI) irradiation. In contrast to traditional understandings, MA in Ni NPs along with their aspect ratio, first increases upto 5 × 10¹³ ions/cm² SHI fluence (5e13) and gets reduced at highest fluence. Using angle dependent Extented-Xray-Absorption-Fine-Structure (EXAFS) and ab initio molecular dynamics (MD) simulations, we show that the anisotropy induced in local atomic structure upon irradiation is dependent on atomic spin-spin interactions, which gets reduced at highest fluence. The chosen model cluster (Ni₃₈) used in our MD simulations is duly validated by comparing the pair-correlation-function of the structure with the EXAFS-Fourier-Transform. The lattice temperatures for the films irradiated at different fluences, as calculated from thermal-spike-model, are used for the respective MD runs. We conclude that the enhanced disorder in both the local atomic environment and spin alignment destroys the MA at the highest fluence in SHI irradiated Ni NPs. The findings therefore provide rich conceptual insights for designing magnetic devices using SHI-induced phenomena.

Hillocks created for amorphizable and non-amorphizable ceramics irradiated with swift heavy ions: TEM study

In a previous study, we found that hillocks (i.e. surface ion tracks) can be imaged using transmission electron microscopy (TEM) by irradiating thin CeO₂ samples with swift heavy ions (SHI) at oblique incidence. In the present study, the same TEM method is applied to Y₃Fe₅O₁₂ (YIG) and three fluorides (CaF₂, SrF₂ and BaF₂) for observing hillocks. For YIG, which is one of the amorphizable materials, hillocks are found to have amorphous features consistent with amorphous features of ion tracks. For the fluorides, it is found that the hillocks do not exhibit amorphous features, and they are composed of nanocrystallites. Although hillocks for YIG and CaF₂ exhibit different crystallographic features, hillock diameter agrees with the molten region diameter predicted by the thermal spike model for both materials. It is found that for YIG the hillock diameter is comparable to the ion track diameter, whereas for the fluorides it is always larger than the ion track diameter. The present result shows the existence of the velocity effect for ion track diameter in CaF₂. It is also found that for fluorides both hillock and ion track diameters vary in the order of cation mass (i.e. CaF₂ < SrF₂ < BaF₂). The above results of hillocks and ion tracks for SHI-irradiated fluorides can be consistently interpreted within the framework of the thermal spike model, if melting and successive recrystallization are assumed.

Monitoring Ion Track Formation Using In Situ RBS/c, ToF-ERDA, and HR-PIXE

The aim of this work is to investigate the feasibility of ion beam analysis techniques for monitoring swift heavy ion track formation. First, the use of the in situ Rutherford backscattering spectrometry in channeling mode to observe damage build-up in quartz SiO₂ after MeV heavy ion irradiation is demonstrated. Second, new results of the in situ grazing incidence time-of-flight elastic recoil detection analysis used for monitoring the surface elemental composition during ion tracks formation in various materials are presented. Ion tracks were found on SrTiO₃, quartz SiO₂, a-SiO₂, and muscovite mica surfaces by atomic force microscopy, but in contrast to our previous studies on GaN and TiO₂, surface stoichiometry remained unchanged. Third, the usability of high resolution particle induced X-ray spectroscopy for observation of electronic dynamics during early stages of ion track formation is shown.

Permanent modifications in silica produced by ion-induced high electronic excitation: experiments and atomistic simulations

The irradiation of silica with ions of specific energy larger than ~0.1 MeV/u produces very high electronic excitations that induce permanent changes in the physical, chemical and structural properties and give rise to defects (colour centres), responsible for the loss of sample transparency at specific bands. This type of irradiation leads to the generation of nanometer-sized tracks around the ion trajectory. In situ optical reflection measurements during systematic irradiation of silica samples allowed us to monitor the irradiation-induced compaction, whereas ex situ optical absorption measurements provide information on colour centre generation. In order to analyse the results, we have developed and validated an atomistic model able to quantitatively explain the experimental results. Thus, we are able to provide a consistent explanation for the size of the nanotracks, the velocity and thresholding effects for track formation, as well as, the colour centre yield per ion and the colour centre saturation density. In this work we will discuss the different processes involved in the permanent modification of silica: collective atomic motion, bond breaking, pressure-driven atom rearrangement and ultra-fast cooling. Despite the sudden lattice energy rise is the triggering and dominant step, all these processes are important for the final atomic configuration.

Understanding the ion-induced elongation of silver nanoparticles embedded in silica

In this work we have studied the elongation of silver nanoparticles irradiated with 40 MeV Bromine ions by means of in situ optical measurements, transmission electron microscopy and molecular dynamics simulations. The localized surface plasmon resonance of silver nanoparticles has a strong dependence on the particle shape and size, which allowed us to obtain the geometrical parameters with remarkable accuracy by means of a fit of the optical spectra. Optical results have been compared with transmission electron microscopy images and molecular dynamics simulations and the agreement is excellent in both cases. An important advantage of in situ measurements is that they yield an extremely detailed information of the full elongation kinetics. Final nanoparticle elongation depends on a complex competition between single-ion deformation, Ostwald ripening and dissolution. Building and validating theoretical models with the data reported in this work should be easier than with the information previously available, due to the unprecedented level of kinetic details obtained from the in situ measurements.

An attempt to apply the inelastic thermal spike model to surface modifications of CaF2 induced by highly charged ions: comparison to swift heavy ions effects and extension to some others material

Surface damage appears on materials irradiated by highly charged ions (HCI). Since a direct link has been found between surface damage created by HCI with the one created by swift heavy ions (SHI), the inelastic thermal spike model (i-TS model) developed to explain track creation resulting from the electron excitation induced by SHI can also be applied to describe the response of materials under HCI which transfers its potential energy to electrons of the target. An experimental description of the appearance of the hillock-like nanoscale protrusions induced by SHI at the surface of CaF₂ is presented in comparison with track formation in bulk which shows that the only parameter on which we can be confident is the electronic energy loss threshold. Track size and electronic energy loss threshold resulting from SHI irradiation of CaF₂ is described by the i-TS model in a 2D geometry. Based on this description the i-TS model is extended to three dimensions to describe the potential threshold of appearance of protrusions by HCI in CaF₂ and to other crystalline materials (LiF, crystalline SiO₂, mica, LiNbO₃, SrTiO₃, ZnO, TiO₂, HOPG). The strength of the electron-phonon coupling and the depth in which the potential energy is deposited near the surface combined with the energy necessary to melt the material defines the classification of the material sensitivity. As done for SHI, the band gap of the material may play an important role in the determination of the depth in which the potential energy is deposited. Moreover larger is the initial potential energy and larger is the depth in which it is deposited.

Triggering of spin-flipping-modulated exchange bias in FeCo nanoparticles by electronic excitation

The exchange coupling between ferromagnetic (FM)-antiferromagnetic (AF) interfaces is a key element of modern spintronic devices. We here introduce a new way of triggering exchange bias (EB) in swift heavy ion (SHI) irradiated FeCo-SiO2 films, which is a manifestation of spin-flipping at high irradiation fluence. The elongation of FeCo nanoparticles (NPs) in SiO2 matrix gives rise to perpendicular magnetic anisotropy at intermediate fluence. However, a clear shift in hysteresis loop is evident at the highest fluence. This reveals the existence of an AF exchange pinning domain in the NPs, which is identified not to be oxide shell from XANES analysis. Thermal spike calculations along with first-principles based simulations under the framework of density functional theory (DFT) demonstrate that spin flipping of 3d valence electrons is responsible for formation of these AF domains inside the FM NPs. EXAFS experiments at Fe and Co K-edges further unravel that spin-flipping in highest fluence irradiated film results in reduced bond lengths. The results highlight the possibility of miniaturization of magnetic storage devices by using irradiated NPs instead of conventionally used FM-AF multilayers.

Tuning the Fabrication of Nanostructures by Low-Energy Highly Charged Ions

Slow highly charged ions have been utilized recently for the creation of monotype surface nanostructures (craters, calderas, or hillocks) in different materials. In the present study, we report on the ability of slow highly charged xenon ions (^{129}Xe^{Q+}) to form three different types of nanostructures on the LiF(100) surface. By increasing the charge state from Q=15 to Q=36, the shape of the impact induced nanostructures changes from craters to hillocks crossing an intermediate stage of caldera structures. A dimensional analysis of the nanostructures reveals an increase of the height up to 1.5 nm as a function of the potential energy of the incident ions. Based on the evolution of both the geometry and size of the created nanostructures, defect-mediated desorption and the development of a thermal spike are utilized as creation mechanisms of the nanostructures at low and high charge states, respectively.

Unraveling The Origin of Enhanced Field Emission from Irradiated FeCo-SiO2 Nanocomposites: A Combined Experimental and First-Principles Based Study

This work is driven by the vision of engineering planar field emitters with ferromagnetic metal-insulator nanocomposite thin films, using swift heavy ion (SHI) irradiation method. FeCo nanoparticles inside SiO2 matrix, when subjected to SHI get elongated. Using this, we demonstrate here a planar field emitter with maximum current density of 550 μA/cm(2) at an applied field of 15 V/μm. The film, irradiated with 5 × 10(13) ions/cm(2) fluence (5e13) of 120 MeV Au(9+) ions, shows very high electron emitting quantum efficiency in comparison to its unirradiated counterpart. Surface enhanced Raman spectroscopy analysis of unirradiated and 5e13 films further confirms that the field emission (FE) enhancement is not only due to surface protrusions but also depends on the properties of entire matrix. We find experimental evidence of enhanced valence band density of states (VB DOS) for 5e13 film from XPS, which is verified in the electronic structure of a model FeCo cluster from first-principles based calculations combining density functional theory (DFT) and molecular dynamics (MD) simulations. The MD temperature is selected from the lattice temperature profile inside nanoparticles as deduced from thermal spike model. Increasing the irradiation fluence beyond 5e13, results in reduced VB DOS and melting of surface protrusions, thus causing reduction of FE current density. We finally conclude from theoretical analysis that change in fluence alters the co-ordination chemistry followed by the charge distribution and spin alignment, which influence the VB DOS and concurrent FE as evident from our experiment.

Mechanism of the defect formation in supported graphene by energetic heavy ion irradiation: the substrate effect

Although ion beam technology has frequently been used for introducing defects in graphene, the associated key mechanism of the defect formation under ion irradiation is still largely unclear. We report a systematic study of the ion irradiation experiments on SiO₂-supported graphene, and quantitatively compare the experimental results with molecular dynamic simulations. We find that the substrate is, in fact, of great importance in the defect formation process, as the defects in graphene are mostly generated through an indirect process by the sputtered atoms from the substrate.

Ultradiscrete kinks with supersonic speed in a layered crystal with realistic potentials

In this paper we develop a dynamical model of the propagating nonlinear localized excitations, supersonic kinks, in the cation layer in a silicate mica crystal. We start from purely electrostatic Coulomb interaction and add the Ziegler-Biersack-Littmark short-range repulsive potential and the periodic potential produced by other atoms of the lattice. The proposed approach allows the construction of supersonic kinks which can propagate in the lattice within a large range of energies and velocities. Due to the presence of the short-range repulsive component in the potential, the interparticle distances in the lattice kinks with high energy are limited by physically reasonable values. The introduction of the periodic lattice potential results in the important feature that the kinks propagate with the single velocity and single energy, which are independent on the excitation conditions. The unique average velocity of the supersonic kinks on the periodic substrate potential we relate with the kink amplitude of the relative particle displacements, which is determined by the interatomic distance corresponding to the minimum of the total, interparticle plus substrate, lattice potential. The found kinks are ultradiscrete and can be described with the "magic wave number" q=2π/3a, which was previously revealed in the nonlinear sinusoidal waves and supersonic kinks in the Fermi-Pasta-Ulam lattice. The extreme discreteness of the observed supersonic kinks, with basically two particles moving at the same time, allows the detailed interpretation of their double-kink structure, which is not possible for the multikinks without an account for the lattice discreteness. Analytical calculations of the displacement patterns and energies of the supersonic kinks are confirmed by numerical simulations. The computed energy of the found supersonic kinks in the considered realistic lattice potential is in a good agreement with the experimental evidence for the transport of localized energetic excitations in silicate mica crystals between the points of ^{40}K recoil and subsequent sputtering.

Electronic excitation induced structural, optical and electrical properties of Se85S10Zn5thin films and applicability of a single oscillator model

The effect of electronic excitation induced by 120 MeV Ag⁹⁺ion irradiation on the physical properties of Se₈₅S₁₀Zn₅thin films has been investigated at various ion fluencies.

Temperature dependence of ion track formation in quartz and apatite

Ion tracks were created in natural quartz and fluorapatite from Durango, Mexico, by irradiation with 2.2 GeV Au ions at elevated temperatures of up to 913 K. The track radii were analysed using small-angle X-ray scattering, revealing an increase in the ion track radius of approximately 0.1 nm per 100 K increase in irradiation temperature. Molecular dynamics simulations and thermal spike calculations are in good agreement with these values and indicate that the increase in track radii at elevated irradiation temperatures is due to a lower energy required to reach melting of the material. The post-irradiation annealing behaviour studied for apatite remained unchanged.

Multi-scale simulation of structural heterogeneity of swift-heavy ion tracks in complex oxides

Tracks formed by swift-heavy ion irradiation, 2.2 GeV Au, of isometric Gd2Ti2O7 pyrochlore and orthorhombic Gd2TiO5 were modeled using the thermal-spike model combined with a molecular-dynamics simulation. The thermal-spike model was used to calculate the energy dissipation over time and space. Using the time, space, and energy profile generated from the thermal-spike model, the molecular-dynamics simulations were performed to model the atomic-scale evolution of the tracks. The advantage of the combination of these two methods, which uses the output from the continuum model as an input for the atomistic model, is that it provides a means of simulating the coupling of the electronic and atomic subsystems and provides simultaneously atomic-scale detail of the track structure and morphology. The simulated internal structure of the track consists of an amorphous core and a shell of disordered, but still periodic, domains. For Gd2Ti2O7, the shell region has a disordered pyrochlore with a defect fluorite structure and is relatively thick and heterogeneous with different degrees of disordering. For Gd2TiO5, the disordered region is relatively small as compared with Gd2Ti2O7. In the simulation, 'facets', which are surfaces with definite crystallographic orientations, are apparent around the amorphous core and more evident in Gd2TiO5 along [010] than [001], suggesting an orientational dependence of the radiation response. These results show that track formation is controlled by the coupling of several complex processes, involving different degrees of amorphization, disordering, and dynamic annealing. Each of the processes depends on the mass and energy of the energetic ion, the properties of the material, and its crystallographic orientation with respect to the incident ion beam.

SAXS investigations of the morphology of swift heavy ion tracks in α-quartz

The morphology of swift heavy ion tracks in crystalline α-quartz was investigated using small angle x-ray scattering (SAXS), molecular dynamics (MD) simulations and transmission electron microscopy. Tracks were generated by irradiation with heavy ions with energies between 27 MeV and 2.2 GeV. The analysis of the SAXS data indicates a density change of the tracks of ~2 ± 1% compared to the surrounding quartz matrix for all irradiation conditions. The track radii only show a weak dependence on the electronic energy loss at values above 17 keV nm(-1), in contrast to values previously reported from Rutherford backscattering spectrometry measurements and expectations from the inelastic thermal spike model. The MD simulations are in good agreement at low energy losses, yet predict larger radii than SAXS at high ion energies. The observed discrepancies are discussed with respect to the formation of a defective halo around an amorphous track core, the existence of high stresses and/or the possible presence of a boiling phase in quartz predicted by the inelastic thermal spike model.

Analysis of Si+-implanted Nd:YVO4 crystal: the relation between lattice damage and waveguide formation

We report the lattice damage and annealing properties of the 500 keV Si+ ions implanted Nd:YVO4 crystal with different doses. The Rutherford backscattering spectrometry/channeling technique was used to analyze the damage profiles of ion-implanted samples. A series of post-implant annealing was performed at temperatures from 250 °C to 400 °C to investigate the relation between lattice damage profile and the waveguide formation. Implantations at doses of more than 5×10(14) ions/cm2 can result in high damage ratio in the near-surface region and the lattice structure cannot be restored even after annealing at 400 °C. Such seriously damaged lattice is relatively stable and contributes to the waveguide structure. Convergence of the refractive index at the surface region after ion implantation is believed mainly due to the elastic collisions with the target atoms caused by nuclear energy loss.

Ion beam-induced shaping of Ni nanoparticles embedded in a silica matrix: from spherical to prolate shape

Present work reports the elongation of spherical Ni nanoparticles (NPs) parallel to each other, due to bombardment with 120 MeV Au+9 ions at a fluence of 5 × 1013 ions/cm2. The Ni NPs embedded in silica matrix have been prepared by atom beam sputtering technique and subsequent annealing. The elongation of Ni NPs due to interaction with Au+9 ions as investigated by cross-sectional transmission electron microscopy (TEM) shows a strong dependence on initial Ni particle size and is explained on the basis of thermal spike model. Irradiation induces a change from single crystalline nature of spherical particles to polycrystalline nature of elongated particles. Magnetization measurements indicate that changes in coercivity (Hc) and remanence ratio (Mr/Ms) are stronger in the ion beam direction due to the preferential easy axis of elongated particles in the beam direction.

Swelling of SiO2 Quartz Induced by Energetic Heavy Ions

A pronounced swelling effect occurs when irradiating SiO2 quartz with heavy ions (F, S, Cu, Kr, Xe, Ta, and Pb) in the electronic energy loss regime. Using a profilometer, the out-of-plane swelling was measured by scanning over the border line between an irradiated and a virgin area of the sample surface. The step height varied between 20 and 300 nm depending on the fluence, the electronic energy loss and the total range of the ions. From complementary Rutherford backscattering experiments under channelling condition (RBS-C), the damage fraction and corresponding track radii were extracted. Normalising the step height per incoming ion and by the projected range, a critical energy loss of 1.8 ± 0.5 keV/nm was found which is in good agreement with the threshold observed by RBS-C. Swelling can be explained by the amorphisation induced along the ion trajectories. The experimental results in quartz are compared to swelling data obtained under similar irradiation conditions in LiNbO3

Making tracks: electronic excitation roles in forming swift heavy ion tracks

Swift heavy ions cause material modification along their tracks, changes primarily due to their very dense electronic excitation. The available data for threshold stopping powers indicate two main classes of materials. Group I, with threshold stopping powers above about 10 keV nm(-1), includes some metals, crystalline semiconductors and a few insulators. Group II, with lower thresholds, comprises many insulators, amorphous materials and high T(c) oxide superconductors. We show that the systematic differences in behaviour result from different coupling of the dense excited electrons, holes and excitons to atomic (ionic) motions, and the consequent lattice relaxation. The coupling strength of excitons and charge carriers with the lattice is crucial. For group II, the mechanism appears to be the self-trapped exciton model of Itoh and Stoneham (1998 Nucl. Instrum. Methods Phys. Res. B 146 362): the local structural changes occur roughly when the exciton concentration exceeds the number of lattice sites. In materials of group I, excitons are not self-trapped and structural change requires excitation of a substantial fraction of bonding electrons, which induces spontaneous lattice expansion within a few hundred femtoseconds, as recently observed by laser-induced time-resolved x-ray diffraction of semiconductors. Our analysis addresses a number of experimental results, such as track morphology, the efficiency of track registration and the ratios of the threshold stopping power of various materials.

Low-dimensional effects in a three-dimensional system of Si quantum dots modified by high-energy ion irradiation

Modification of films containing Si nanocrystallites embedded in SiO2 by irradiation with high-energy ions was found to induce peaks in their low-frequency capacitance-voltage characteristics. Considering the nanocrystallite spatial distribution that follows the ion tracks we interpret these peaks as due to the charge transfer along these tracks, similar to the process that was reported previously for two-dimensional arrays of such crystallites. The ion irradiation of the above three-dimensional system appears to be useful then for the fabrication of nanostructures, which have also the properties of low-dimensional arrays.

The modification of Si nanocrystallites embedded in a dielectric matrix by high energy ion irradiation

We have followed the effects of heavy ion irradiation on the structural, electrical, and photoluminescence properties of ensembles of silicon nanocrystallites embedded in a dielectric (SiO(2)) matrix. This was done as a function of the irradiation dose and the content of the Si phase. The results obtained can be accounted for self-consistently assuming that a relatively small dose of the irradiation enhances the crystallization while for higher doses the irradiation enhances the amorphization. The corresponding processes suggest that tuning of the above properties can be achieved by swift heavy ion irradiation.

Fine structure in swift heavy ion tracks in amorphous SiO2

We report on the observation of a fine structure in ion tracks in amorphous SiO2 using small angle x-ray scattering measurements. Tracks were generated by high energy ion irradiation with Au and Xe between 27 MeV and 1.43 GeV. In agreement with molecular dynamics simulations, the tracks consist of a core characterized by a significant density deficit compared to unirradiated material, surrounded by a high density shell. The structure is consistent with a frozen-in pressure wave originating from the center of the ion track as a result of a thermal spike.

Creation of multiple nanodots by single ions

In the search to develop tools that are able to modify surfaces on the nanometre scale, the use of heavy ions with energies of several tens of MeV is becoming more attractive. Low-energy ions are mostly stopped by nuclei, which causes the energy to be dissipated over a large volume. In the high-energy regime, however, the ions are stopped by electronic excitations, and the extremely local (approximately 10 nm3) nature of the energy deposition leads to the creation of nanosized 'hillocks' or nanodots under normal incidence. Usually, each nanodot results from the impact of a single ion, and the dots are randomly distributed. Here we demonstrate that multiple, equally spaced dots, each separated by a few tens of nanometres, can be created if a single high-energy xenon ion strikes the surface at a grazing angle. By varying this angle, the number of dots, as well as their spacing, can be controlled.

Phase transitions in solids stimulated by simultaneous exposure to high pressure and relativistic heavy ions

In many solids, heavy ions of high kinetic energy (MeV-GeV) produce long cylindrical damage trails with diameters of order 10 nm. Up to now, no information was available how solids cope with the simultaneous exposure to these energetic projectiles and to high pressure. We report the first experiments where relativistic uranium and gold ions from the SIS heavy-ion synchrotron at GSI were injected through several mm of diamond into solid samples pressurized up to 14 GPa in a diamond anvil cell. In synthetic graphite and natural zircon, the combination of pressure and ion beams triggered drastic structural changes not caused by the applied pressure or the ions alone. The modifications comprise long-range amorphization of graphite rather than individual track formation, and in the case of zircon the decomposition into nanocrystals and nucleation of the high-pressure phase reidite.

Jetlike component in sputtering of LiF induced by swift heavy ions

Angular distributions of sputtered atoms from SiO2 and LiF single crystals were measured under the irradiation of 1 MeV/u swift heavy ions. In contrast to the almost isotropic distribution of SiO2, an additional jetlike component was observed for LiF. The total sputtering yield of SiO2 ( approximately 10(2) atoms/ion) can be reproduced by an extended inelastic thermal spike model, whereas the huge yield of LiF ( approximately 10(4) atoms/ion) needs a substantial decrease of the sublimation energy to be described by the model.