Microscopic theory of the wind force for adsorbates on simple metal surfaces

Nonequilibrium protection effect and spatial localization of noise-induced fluctuations: Quasi-one-dimensional driven lattice gas with partially penetrable obstacle

We consider a nonequilibrium transition that leads to the formation of nonlinear steady-state structures due to the gas flow scattering on a partially penetrable obstacle. The resulting nonequilibrium steady state (NESS) corresponds to a two-domain gas structure attained at certain critical parameters. We use a simple mean-field model of the driven lattice gas with ring topology to demonstrate that this transition is accompanied by the emergence of local invariants related to a complex composed of the obstacle and its nearest gas surrounding, which we refer to as obstacle edges. These invariants are independent of the main system parameters and behave as local first integrals, at least qualitatively. As a result, the complex becomes insensitive to the noise of external driving field within the overcritical domain. The emerged invariants describe the conservation of the number of particles inside the obstacle and strong temporal synchronization or correlation of gas states at obstacle edges. Such synchronization guarantees the equality to zero of the total edge current at any time. The robustness against external drive fluctuations is shown to be accompanied by strong spatial localization of induced gas fluctuations near the domain wall separating the depleted and dense gas phases. Such a behavior can be associated with nonequilibrium protection effect and synchronization of edges. The transition rates between different NESSs are shown to be different. The relaxation rates from one NESS to another take complex and real values in the sub- and overcritical regimes, respectively. The mechanism of these transitions is governed by the generation of shock waves at the back side of the obstacle. In the subcritical regime, these solitary waves are generated sequentially many times, while only a single excitation is sufficient to rearrange the system state in the overcritical regime.

Free-Space Nanometer Wiring via Nanotip Manipulation

Relentless efforts in semiconductor technology have driven nanometer-scale miniaturization of transistors, diodes, and interconnections in electronic chips. Free-space writing enables interconnections of stacked modules separated by an arbitrary distance, leading to ultimate integration of electronics. We have developed a free-space method for nanometer-scale wiring on the basis of manipulating a metallic nanotip while applying a bias voltage without radiative heating, lithography, etching, or electrodeposition. The method is capable of fabricating wires with widths as low as 1-6 nm and lengths exceeding 200 nm with a breakdown current density of 8 TA/m(2). Structural evolution and conduction during wire formation were analyzed by direct atomistic visualization using in situ high-resolution transmission electron microscopy.

Microscopic Driving Forces For Electromigration

Electromigration in metals is due to microscopic forces acting on mobile defects. These microscopic forces arise from the local electric field that accompanies electron transport, and the resulting defect migration is a consequence of the dynamic response of the defect to this local field. Theoretical results are given for the local electric field and the electromigration driving force on impurities in bulk systems and in metallic microstructures where surfaces, grain boundaries and dislocations play an important role. Extensions of the theory are described for mesoscopic systems, and local heating is shown to be an important effect as the size of the system becomes smaller and the electron current is larger.

Verification of unzipping models of electromigration in gold nanocontacts by in situ high-resolution transmission electron microscopy

We observed in situ the electromigration process of gold (Au) nanocontacts (NCs) by high-resolution transmission electron microscopy. The structural dynamics of the interior and surfaces of the NCs were investigated at the atomic level. In particular, we directly verified the evidence of the unzipping model of electromigration with the in situ observation of surface-edge movement. The fundamental parameters of NCs, i.e., conductance and tensile force, were also measured during in situ lattice imaging of electromigration. Atoms migrating from the negative electrode accumulated at the most constricted regions of the NCs, leading to expansion. As a result, the NCs were compressed by the two electrodes. We demonstrated the magnitude of the force acting on the NCs during electromigration. The critical voltage of electromigration was approximately 80 mV, and the current density at the critical voltage was 60 TA m(-2). We found that Au nanogaps could be fabricated by applying this bias voltage to Au NCs.

Real-time TEM imaging of the formation of crystalline nanoscale gaps

We present real-time transmission electron microscopy of nanogap formation by feedback controlled electromigration that reveals a remarkable degree of crystalline order. Crystal facets appear during feedback controlled electromigration indicating a layer-by-layer, highly reproducible electromigration process avoiding thermal runaway and melting. These measurements provide insight into the electromigration induced failure mechanism in sub-20 nm size interconnects, indicating that the current density at failure increases as the width decreases to approximately 1 nm.

Local electromigration model for crystal surfaces

The dynamics of crystal surfaces in the presence of electromigration is analyzed. From a phase field model with a migration force which depends on the local geometry, a step model with additional contributions is derived in the kinetic boundary conditions. These contributions trigger various surface instabilities, such as step meandering, bunching, and pairing on vicinal surfaces. Experiments are discussed.