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Citation(s) in
RCA
4
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1996 (1)
1995 (1)
1994 (2)
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PHYSICAL REVIEW. B, CONDENSED MATTER (4)
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Cheng Y
, Stavola M, Abernathy CR, Pearton SJ, Hobson WS.
Aligned defect complex containing carbon and hydrogen in as-grown GaAs epitaxial layers.
Phys Rev B Condens Matter
1994;
49
:2469-2476. [PMID:
10011080
DOI:
10.1103/physrevb.49.2469
]
[
Citation(s) in
RCA
: 11
]
[
Impact Index Per Article: 0.4
]
[
Reference Citation Analysis
]
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[Indexed: 04/12/2023]
Number
Cited by Other Article(s)
1
Lee SG
, Chang KJ. Atomic structure of defect complexes containing carbon and hydrogen in GaAs.
PHYSICAL REVIEW. B, CONDENSED MATTER
1996;
54
:8522-8526. [PMID:
9984527
DOI:
10.1103/physrevb.54.8522
]
[
Citation(s) in
RCA
: 3
]
[
Impact Index Per Article: 0.1
]
[
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[Indexed: 04/12/2023]
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2
Davidson BR
, Newman RC, Bachem KH. Aligned carbon-hydrogen complexes in GaAs formed by the decomposition of trimethylgallium during low-pressure metal-organic vapor-phase epitaxy.
PHYSICAL REVIEW. B, CONDENSED MATTER
1995;
52
:5179-5182. [PMID:
9981703
DOI:
10.1103/physrevb.52.5179
]
[
Citation(s) in
RCA
: 3
]
[
Impact Index Per Article: 0.1
]
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Reference Citation Analysis
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[Indexed: 04/12/2023]
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3
Davidson BR
, Newman RC, Kaneko T, Naji O. Orientation relationship of aligned carbon-hydrogen complexes in GaAs formed by the decomposition of trimethylgallium to the directions of the (2 x 4) surface reconstruction observed during growth.
PHYSICAL REVIEW. B, CONDENSED MATTER
1994;
50
:12250-12253. [PMID:
9975382
DOI:
10.1103/physrevb.50.12250
]
[
Citation(s) in
RCA
: 9
]
[
Impact Index Per Article: 0.3
]
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[Indexed: 04/12/2023]
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4
Pritchard RE
, Newman RC, Wagner J, Fuchs F, Jones R, Öberg S. Bonding of H-CAs pairs in AlxGa1-xAs alloys.
PHYSICAL REVIEW. B, CONDENSED MATTER
1994;
50
:10628-10636. [PMID:
9975159
DOI:
10.1103/physrevb.50.10628
]
[
Citation(s) in
RCA
: 6
]
[
Impact Index Per Article: 0.2
]
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[Indexed: 04/12/2023]
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