Bertocchi M, Luppi E, Degoli E, Véniard V, Ossicini S. Defects and strain enhancements of second-harmonic generation in Si/Ge superlattices.
J Chem Phys 2014;
140:214705. [PMID:
24908033 DOI:
10.1063/1.4880756]
[Citation(s) in RCA: 7] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
Abstract
Starting from experimental findings and interface growth problems in Si/Ge superlattices, we have investigated through ab initio methods the concurrent and competitive behavior of strain and defects in the second-harmonic generation process. Interpreting the second-harmonic intensities as a function of the different nature and percentage of defects together with the strain induced at the interface between Si and Ge, we found a way to tune and enhance the second-harmonic generation response of these systems.
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