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Lin ML, Feng M, Wu JB, Ran FR, Chen T, Luo WX, Wu H, Han WP, Zhang X, Liu XL, Xu Y, Li H, Wang YF, Tan PH. Intralayer Phonons in Multilayer Graphene Moiré Superlattices. Research (Wash D C) 2022; 2022:9819373. [PMID: 35707049 PMCID: PMC9175117 DOI: 10.34133/2022/9819373] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/08/2022] [Accepted: 04/08/2022] [Indexed: 11/16/2022] Open
Abstract
Moiré pattern in twisted multilayers (tMLs) induces many emergent phenomena by subtle variation of atomic registry to modulate quasiparticles and their interactions, such as superconductivity, moiré excitons, and moiré phonons. The periodic superlattice potential introduced by moiré pattern also underlies patterned interlayer coupling at the interface of tMLs. Although this arising patterned interfacial coupling is much weaker than in-plane atomic interactions, it is crucial in moiré systems, as captured by the renormalized interlayer phonons in twisted bilayer transitional metal dichalcogenides. Here, we determine the quantitative relationship between the lattice dynamics of intralayer out-of-plane optical (ZO) phonons and patterned interfacial coupling in multilayer graphene moiré superlattices (MLG-MS) by the proposed perturbation model, which is previously challenging for MLGs due to their out-of-phase displacements of adjacent atoms in one atomic plane. We unveil that patterned interfacial coupling introduces profound modulations on Davydov components of nonfolded ZO phonon that are localized within the AB-stacked constituents, while the coupling results in layer-extended vibrations with symmetry of moiré pattern for moiré ZO phonons. Our work brings further degrees of freedom to engineer moiré physics according to the modulations imprinted on the phonon frequency and wavefunction.
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Affiliation(s)
- Miao-Ling Lin
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering & CAS Center of Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Min Feng
- School of Physics, Nankai University, Tianjin 300071, China
| | - Jiang-Bin Wu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Fei-Rong Ran
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing Tech University, 30 South Puzhu Road, Nanjing 211816, China
| | - Tao Chen
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Wei-Xia Luo
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering & CAS Center of Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Heng Wu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering & CAS Center of Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Wen-Peng Han
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Xin Zhang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Xue-Lu Liu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Yang Xu
- School of Micro-nanoelectronics, State Key Laboratory of Silicon Materials, Hangzhou Global Scientific and Technological Innovation Center, ZJU-UIUC Joint Institute, Zhejiang University, Hangzhou 310027, China
| | - Hai Li
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing Tech University, 30 South Puzhu Road, Nanjing 211816, China
| | - Yu-Fang Wang
- School of Physics, Nankai University, Tianjin 300071, China
| | - Ping-Heng Tan
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering & CAS Center of Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100049, China
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Laref A. Tight-binding molecular dynamics simulation of ZnSe liquid within the local environment dependence. J Comput Chem 2011; 33:1-10. [PMID: 21935967 DOI: 10.1002/jcc.21935] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/08/2011] [Revised: 07/08/2011] [Accepted: 08/08/2011] [Indexed: 01/03/2023]
Abstract
We investigate the structural, electronic and dynamical properties of ZnSe liquid using tight-binding molecular dynamics (TBMD) simulations. We report the TBMD calculations for the solid and liquid forms of the ZnSe compound. To produce more realistic results the TB model includes the local environment dependence in the Hamiltonian matrix at finite temperature for ZnSe. To further demonstrate the efficiency of the TBMD approach, we present results for finite temperature physical properties of ZnSe liquid. We are able to show good agreement with experiment for the atomic mean-squared displacement and melting point.
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Affiliation(s)
- A Laref
- Department of Physics Science Faculty,King Saud University,Riyadh, 11451 Saudi Arabia
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Nguyen-Manh D, Pettifor DG, Vitek V. Analytic environment-dependent tight-binding bond integrals: application to MoSi2. PHYSICAL REVIEW LETTERS 2000; 85:4136-4139. [PMID: 11056643 DOI: 10.1103/physrevlett.85.4136] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/31/2000] [Indexed: 05/23/2023]
Abstract
We present the first derivation of explicit analytic expressions for the environmental dependence of the sigma, pi, and delta bond integrals within the orthogonal two-center tight-binding approximation by using the recently developed bond-order potential theory to invert the nonorthogonality matrix. We illustrate the power of this new formalism by showing that it not only captures the transferability of the bond integrals between elemental bcc Mo and Si and binary C11(b) MoSi2 but also predicts the absence of any discontinuity between first and second nearest neighbors for the ddsigma bond integral even though large discontinuities exist for ppsigma, pppi, and ddpi.
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Affiliation(s)
- D Nguyen-Manh
- Department of Materials, University of Oxford, Oxford, Parks Road, OX1 3PH, United Kingdom
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Widany J, Frauenheim T, Köhler T, Sternberg M, Porezag D, Jungnickel G, Seifert G. Density-functional-based construction of transferable nonorthogonal tight-binding potentials for B, N, BN, BH, and NH. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 53:4443-4452. [PMID: 9983998 DOI: 10.1103/physrevb.53.4443] [Citation(s) in RCA: 43] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Frauenheim T, Weich F, Köhler T, Uhlmann S, Porezag D, Seifert G. Density-functional-based construction of transferable nonorthogonal tight-binding potentials for Si and SiH. PHYSICAL REVIEW. B, CONDENSED MATTER 1995; 52:11492-11501. [PMID: 9980258 DOI: 10.1103/physrevb.52.11492] [Citation(s) in RCA: 124] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
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