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For: Stutzmann M, Rossi MC, Brandt MS. Pulsed-light soaking of hydrogenated amorphous silicon. Phys Rev B Condens Matter 1994;50:11592-11605. [PMID: 9975292 DOI: 10.1103/physrevb.50.11592] [Citation(s) in RCA: 12] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
Number Cited by Other Article(s)
1
Rakowski R, Barna A, Suta T, Bohus J, Földes IB, Szatmári S, Mikołajczyk J, Bartnik A, Fiedorowicz H, Verona C, Verona Rinati G, Margarone D, Nowak T, Rosiński M, Ryć L. Resonant third harmonic generation of KrF laser in Ar gas. THE REVIEW OF SCIENTIFIC INSTRUMENTS 2014;85:123105. [PMID: 25554270 DOI: 10.1063/1.4902346] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
2
Zhou JH, Kumeda M, Shimizu T. Investigation of the spatial distribution of dangling bonds in light-soaked hydrogenated amorphous silicon. PHYSICAL REVIEW. B, CONDENSED MATTER 1996;53:7267-7274. [PMID: 9982174 DOI: 10.1103/physrevb.53.7267] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
3
Graeff CF, Brandt MS, Stutzmann M, Powell MJ. Defect creation in amorphous-silicon thin-film transistors. PHYSICAL REVIEW. B, CONDENSED MATTER 1995;52:4680-4683. [PMID: 9981633 DOI: 10.1103/physrevb.52.4680] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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