|
1
|
Zhou PY, Dou XM, Wu XF, Ding K, Li MF, Ni HQ, Niu ZC, Jiang DS, Sun BQ. Single-photon property characterization of 1.3 μm emissions from InAs/GaAs quantum dots using silicon avalanche photodiodes. Sci Rep 2014; 4:3633. [PMID: 24407193 PMCID: PMC3887382 DOI: 10.1038/srep03633] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/08/2013] [Accepted: 12/13/2013] [Indexed: 11/09/2022] Open
Abstract
We developed a new approach to test the single-photon emissions of semiconductor quantum dots (QDs) in the optical communication band. A diamond-anvil cell pressure device was used for blue-shifting the 1.3 μm emissions of InAs/GaAs QDs to 0.9 μm for detection by silicon avalanche photodiodes. The obtained g(2)(0) values from the second-order autocorrelation function measurements of several QD emissions at 6.58 GPa were less than 0.3, indicating that this approach provides a convenient and efficient method of characterizing 1.3 μm single-photon source based on semiconductor materials.
Collapse
Affiliation(s)
- P Y Zhou
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of SciencesP.O. Box 912, Beijing 100083, China
| | - X M Dou
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of SciencesP.O. Box 912, Beijing 100083, China
| | - X F Wu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of SciencesP.O. Box 912, Beijing 100083, China
| | - K Ding
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of SciencesP.O. Box 912, Beijing 100083, China
| | - M F Li
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of SciencesP.O. Box 912, Beijing 100083, China
| | - H Q Ni
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of SciencesP.O. Box 912, Beijing 100083, China
| | - Z C Niu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of SciencesP.O. Box 912, Beijing 100083, China
| | - D S Jiang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of SciencesP.O. Box 912, Beijing 100083, China
| | - B Q Sun
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of SciencesP.O. Box 912, Beijing 100083, China
| |
Collapse
|
|
2
|
Dähne M, Eisele H. Cross-sectional Scanning Tunneling Microscopy at InAs Quantum Dots. NANO-OPTOELECTRONICS 2002:117-133. [DOI: 10.1007/978-3-642-56149-8_5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/02/2023]
|
|
3
|
Atomic structure of stacked InAs quantum dots grown by metal-organic chemical vapor deposition. ACTA ACUST UNITED AC 1999. [DOI: 10.1116/1.590803] [Citation(s) in RCA: 61] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
|
|
4
|
Li GH, Goñi AR, Syassen K, Hou HQ, Feng W, Zhou JM. High-pressure study of optical transitions in strained In0.2Ga0.8As/GaAs multiple quantum wells. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 54:13820-13826. [PMID: 9985299 DOI: 10.1103/physrevb.54.13820] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
|
|
5
|
Ulrich C, Ves S, Goñi AR, Kurtenbach A, Syassen K, Eberl K. Electronic subband structure of InP/InxGa1-xP quantum islands from high-pressure photoluminescence and photoreflectance. PHYSICAL REVIEW. B, CONDENSED MATTER 1995; 52:12212-12217. [PMID: 9980366 DOI: 10.1103/physrevb.52.12212] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
|
|
6
|
Tit N, Peressi M. Electronic structure of GaAs with an InAs (001) monolayer. PHYSICAL REVIEW. B, CONDENSED MATTER 1995; 52:10776-10779. [PMID: 9980167 DOI: 10.1103/physrevb.52.10776] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
|
|
7
|
Li GH, Goñi AR, Syassen K, Brandt O, Ploog K. State mixing in InAs/GaAs quantum dots at the pressure-induced Gamma -X crossing. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 50:18420-18425. [PMID: 9976278 DOI: 10.1103/physrevb.50.18420] [Citation(s) in RCA: 25] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
|