Enhanced conductance near zero voltage bias in mesoscopic superconductor-semiconductor junctions

Zero-Bias Conductance Peaks Effectively Tuned by Gating-Controlled Rashba Spin-Orbit Coupling

Zero-bias conductance peaks (ZBCPs) can manifest a number of notable physical phenomena and thus provide critical characteristics to the underlying electronic systems. Here, we report observations of pronounced ZBCPs in hybrid junctions composed of an oxide heterostructure LaAlO_{3}/SrTiO_{3} and an elemental superconductor Nb, where the two-dimensional electron system (2DES) at the LaAlO_{3}/SrTiO_{3} interface is known to accommodate gate-tunable Rashba spin-orbit coupling (SOC). Remarkably, the ZBCPs exhibit a domelike dependence on the gate voltage, which correlates strongly with the nonmonotonic gate dependence of the Rashba SOC in the 2DES. The origin of the observed ZBCPs can be attributed to the reflectionless tunneling effect of electrons that undergo phase-coherent multiple Andreev reflection, and their gate dependence can be explained by the enhanced quantum coherence time of electrons in the 2DES with increased momentum separation due to SOC. We further demonstrate theoretically that, in the presence of a substantial proximity effect, the Rashba SOC can directly enhance the overall Andreev conductance in the 2DES-barrier-superconductor junctions. These findings not only highlight nontrivial interplay between electron spin and superconductivity revealed by ZBCPs, but also set forward the study of superconducting hybrid structures by means of controllable SOC, which has significant implications in various research fronts from superconducting spintronics to topological superconductivity.

Resonant Andreev Spectroscopy in normal-Metal/thin-Ferromagnet/Superconductor Device: Theory and Application

We develop a theoretical model to describe the transport properties of normal-metal/thin-ferromagnet/superconductor device. We perform experimental test of the model using a gold tip on PdNi/Nb bilayer. The resonant proximity effect causes conductance features very sensitive to the local ferromagnetic properties, enabling accurate measurement of polarization and thickness of the ferromagnet by point contact spectroscopy.

Reflectionless tunneling at the interface between nanoparticles and superconductors

Interfaces between disordered normal (DN) materials and superconductors (S) are known to generate conductance peaks at zero-bias voltage (V) and magnetic field (B). Using molecularly linked Au nanoparticle films as the DN component, we find that superimposed on conductance peaks are oscillations that depend simultaneously on both V and B. Such correlated conductance oscillations are predicted by a "reflectionless tunneling" phenomenon but have not been observed in other DN-S systems. Length scales extracted from periods of conductance oscillation correlate well with film nanostructure.

Conductance oscillations in molecularly linked Au nanoparticle film-superconductor systems

Charge transport across a disordered normal-superconductor (DN-S) interface was studied using a macroscopic, molecularly linked Au nanoparticle film as the DN component. Low-temperature conductance versus voltage and magnetic field exhibit zero-bias and zero-field peaks, respectively. Importantly, the latter typically exhibit superimposed oscillations. Such oscillations are rarely seen in other DN-S systems and are remarkable given their robustness in these macroscopic films and interfaces. A number of observations indicate that conductance peaks and oscillations arise due to a 'reflectionless tunnelling' process. Scattering length scales extracted from the data using a reflectionless tunnelling picture are consistent with literature values. Factors resulting in the observation of oscillations in this system are discussed.

Andreev reflection eigenvalue density in mesoscopic conductors

The energy-dependent Andreev reflection eigenvalues determine the transport properties of normal-superconducting systems. We evaluate the eigenvalue density to get insight into the formation of resonant electron-hole transport channels. The circuit-theory-like method developed can be applied to any generic mesoscopic conductor or combinations thereof. We present the results for experimentally relevant cases of a diffusive wire and a double tunnel junction.

Doubled full shot noise in quantum coherent superconductor-semiconductor junctions

We performed low temperature shot noise measurements in superconductor (TiN) strongly disordered normal metal (heavily doped Si) weakly transparent junctions. We show that the conductance has a maximum due to coherent multiple Andreev reflections at low energy and that the shot noise is then twice the Poisson noise (S = 4eI). When the subgap conductance reaches its minimum at finite voltage the shot noise changes to the normal value (S = 2eI) due to a large quasiparticle contribution.

Resonant transport in Nb /GaAs /AlGaAs heterostructures: realization of the de Gennes-Saint-James model

Resonant transport is demonstrated in a hybrid superconductor-semiconductor heterostructure junction grown by molecular beam epitaxy on GaAs. This heterostructure realizes the model system introduced by de Gennes and Saint-James in 1963 [P. G. de Gennes and D. Saint-James, Phys. Lett. 4, 151 (1963)]. At low temperatures a single marked resonance peak is shown superimposed to the characteristic Andreev-dominated subgap conductance. The observed magnetotransport properties are successfully analyzed within the random matrix theory of quantum transport, and ballistic effects are included by directly solving the Bogoliubov-de Gennes equations.