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For: Fujitani H, Asano S. Schottky-barrier height and electronic structure of the Si interface with metal silicides: CoSi2, NiSi2, and YSi2. Phys Rev B Condens Matter 1994;50:8681-8698. [PMID: 9974888 DOI: 10.1103/physrevb.50.8681] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]

For:	Fujitani H, Asano S. Schottky-barrier height and electronic structure of the Si interface with metal silicides: CoSi2, NiSi2, and YSi2. Phys Rev B Condens Matter 1994;50:8681-8698. [PMID: 9974888 DOI: 10.1103/physrevb.50.8681] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]

Number	Cited by Other Article(s)
1	Fujitani H, Asano S. Full-potential total-energy investigation on the lattice relaxation at the two types of NiSi2/Si(111) interface. PHYSICAL REVIEW. B, CONDENSED MATTER 1995;51:18019-18021. [PMID: 9978845 DOI: 10.1103/physrevb.51.18019] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023] Abstract Collapse Key Words Collapse MESH Headings Collapse Grants Collapse Affiliation(s) Collapse

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Cited by Other Article(s)

Fujitani H, Asano S. Full-potential total-energy investigation on the lattice relaxation at the two types of NiSi2/Si(111) interface. PHYSICAL REVIEW. B, CONDENSED MATTER 1995;51:18019-18021. [PMID: 9978845 DOI: 10.1103/physrevb.51.18019] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]