Luminescence properties of a cubic silicon cluster octasilacubane

Optical properties of organosilicon compounds containing sigma-electron delocalization by quasiparticle self-consistent GW calculations

We investigate theoretically the electronic and optical absorption properties of two sub-classes of oligosilanes: (i) Si(CH₃)₄, Si₄(CH₃)₈, and Si₈(CH₃)₈ that contain Si dot, ring and cage, respectively, and exhibit typical SiC and SiSi bonds; and (ii) persilastaffanes Si₇H₆(CH₃)₆ and Si₁₂H₆(CH₃)₁₂, which contain extended delocalized σ-electrons in SiSi bonds over three-dimensional Si frameworks. Our modeling is performed within the GW approach up to the partially self-consistent GW₀ approximation, which is more adequate for reliably predicting the optical band gaps of materials. We examine how the optical properties of these organosilicon compounds depend on their size, geometric features, and Si/C composition. Our results indicate that the present methodology offers a viable way of describing the optical excitations of tailored functional Si-C-based clusters and molecular optical tags with potential use as efficient light absorbers/emitters in molecular optical devices.

The reactivity of Nbn+ clusters with acetylene and ethylene to produce a cubic aromatic metal carbide Nb4C4+

The reactions of niobium cationic clusters with acetylene and ethylene under sufficient gas collision conditions give rise to dominant dehydrogenation and produce a main metal carbide Nb4C4+ which is associated with cubic aromaticity.

Introductory lecture: origins and applications of efficient visible photoluminescence from silicon-based nanostructures

This review highlights many spectroscopy-based studies and selected phenomenological studies of silicon-based nanostructures that provide insight into their likely PL mechanisms, and also covers six application areas.

Evaluation of optical and electronic properties of silicon nano-agglomerates embedded in SRO: applying density functional theory

In systems in atomic scale and nanoscale such as clusters or agglomerates constituted by particles from a few to less than 100 atoms, quantum confinement effects are very important. Their optical and electronic properties are often dependent on the size of the systems and the way in which the atoms in these clusters are bonded. Generally, these nanostructures display optical and electronic properties significantly different to those found in corresponding bulk materials. Silicon agglomerates embedded in silicon rich oxide (SRO) films have optical properties, which have been reported to be directly dependent on silicon nanocrystal size. Furthermore, the room temperature photoluminescence (PL) of SRO has repeatedly generated a huge interest due to its possible applications in optoelectronic devices. However, a plausible emission mechanism has not been widely accepted in the scientific community. In this work, we present a short review about the experimental results on silicon nanoclusters in SRO considering different techniques of growth. We focus mainly on their size, Raman spectra, and photoluminescence spectra. With this as background, we employed the density functional theory with a functional B3LYP and a basis set 6-31G* to calculate the optical and electronic properties of clusters of silicon (constituted by 15 to 20 silicon atoms). With the theoretical calculation of the structural and optical properties of silicon clusters, it is possible to evaluate the contribution of silicon agglomerates in the luminescent emission mechanism, experimentally found in thin SRO films.

Annealing Studies of Visible Light Emission from Silicon Nanocrystals Produced by Implantation

The annealing behavior of silicon implanted SiO2 layers is studied using continuous and time-gated photoluminescence (PL). Two PL emission bands are observed. A band centered at 560 nm is present in as implanted samples and it is still observed after 1000 °C annealing. The emission time is fast (0.2 -2 ns). A second band centered at 780 nm further increases when hydrogen annealing was performed. The emission time is long (1 μs - 0.3 ms).

Micro- and nanocubes of carbon with C8-like and blue luminescence

Micro- and nanocubes of carbon have been synthesized by laser ablation in liquid. The morphology and structure analyses indicated that these micro- and nanocubes are single crystals with a body-centered cubic structure with a lattice constant of 5.46 angstroms, which is so-called C 8-like structure, and they have a slightly truncated shape bounded mainly by (200) facets. A blue-purple luminescence at room temperature was observed in the cathodoluminescence spectrum of the synthesized single micro- and nanocube of carbon, which exhibited that this unique carbon nanomaterial is a new semiconductor with blue luminescence. The physical and chemical mechanisms of the synthesis of carbon micro- and nanocubes were pursued upon laser ablation in liquid.

Silicon Nanoclusters Selectively Generated by Laser Ablation in Supercritical Fluid

A novel method for generating nanomaterials is developed by performing laser ablation of silicon crystals in supercritical fluid. The method is shown to successfully generate silicon nanoclusters, and to allow for the selective generation of clusters having different electronic structures. This selective fabrication enables us to obtain the nanoclusters via a dry process, by changing only the fluid density and/or temperature when ablation is performed. The experimental procedures are not highly specialized, and a variety of researchers unfamiliar with wet chemical processes are able to obtain nanoclusters with different properties in only a few minutes. This new method can also be used to selectively obtain other semiconductor or metal nanomaterials with different properties.

Time-Resolved Photoluminescence Spectra of Si Species Encapsulated in Zeolite Supercages

Photoluminescence (PL) spectra of Si species encapsulated in zeolite supercages are studied. It is reported that the chained Si species terminated partially with phenyl groups and with some unsaturated bonds are formed in zeolite supercages by the reaction with phenylsilane and they show PL around 4 eV (J. Phys. Chem. 2004, 108, 2501-2508). In the present paper they are reduced with hydrogen to prepare Si chained species terminated and saturated with hydrogen atoms. The PL spectra are deconvoluted to be four components at 1.9, 2.2, 2.6, and 3.7 eV, which can tentatively be assigned to Si nanocrystals and Si quantum wires in addition to defects in SiO2 and uncontrolled organic impurities in zeolite, respectively. At elevated temperatures the Si quantum wires in zeolite pores seem to change the Si nanocrystals with the size larger than that of the zeolite pore diameter. It is the first case in which the PL decay lifetime of oxygen vacancies in zeolite can be detected to be quite short to be about 16 ns. The detected lifetimes of Si quantum wires are significantly very short, about 12 ns. The Si species encapsulated zeolite is solvated with hydrofluoric acid solution to separate the Si quantum wires by dissolving zeolite lattice. The Si quantum wires in the HF solution show intense PL spectra peaked at 2.33 eV and broad UV spectra around 2.8-3.5 eV. They will have different shapes and lengths. The HF solvated zeolite shows still PL spectra characteristic of oxygen vacancies and the absorption edge at 3.6 eV. The result means that zeolite lattice is solvated in HF solution as clusters with a band gap of 3.6 eV and they can still have some oxygen vacancies. Oxygen vacancies situate about 1.0 eV below the zeolite conduction band minimum, and the absorbed energy can be dissipated as PL between the valence band maximum and the oxygen vacancies. It is concluded that the excitation photon energy can be absorbed in zeolite and the Si quantum wires and then the absorbed energies are competitively relaxed in zeolite and the Si quantum wires.