Muschler B, Prestel W, Schachinger E, Carbotte JP, Hackl R, Ono S, Ando Y. An electron-boson glue function derived from electronic Raman scattering.
JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2010;
22:375702. [PMID:
21403206 DOI:
10.1088/0953-8984/22/37/375702]
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Abstract
Raman scattering cross sections depend on photon polarization. In the cuprates, nodal and antinodal directions are weighted more strongly in B(2g) and B(1g) symmetries, respectively. On the other hand, in angle-resolved photoemission spectroscopy (ARPES), electronic properties are measured along well-defined directions in momentum space rather than their weighted averages being taken. In contrast, the optical conductivity involves a momentum average over the entire Brillouin zone. Newly measured Raman response data on high-quality Bi(2)Sr(2)CaCu(2)O(8 + δ) single crystals up to high energies have been inverted using a modified maximum entropy inversion technique to extract from B(1g) and B(2g) Raman data corresponding electron-boson spectral densities (glue), and these are compared to the results obtained with known ARPES and optical inversions. We find that the B(2g) spectrum agrees qualitatively with nodal direction ARPES while the B(1g) results look more like the optical spectrum. A large peak around 30-40 meV in B(1g) and a much less prominent one in B(2g) are taken as support for the importance of (π, π) scattering at this frequency.
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