Sagdeo A, Rai S, Srivastava AK, Lodha GS, Rawat R, Le Guen K, Jonnard P. Origin of step-like behavior in the Co/Si system.
JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2011;
23:246004. [PMID:
21613723 DOI:
10.1088/0953-8984/23/24/246004]
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Abstract
A systematic investigation of the structure, nature of the interface and their possible connections with magnetic properties for the as-deposited Co/Si/Co trilayer system has been carried out. X-ray reflectivity, cross-sectional transmission electron microscopy and x-ray emission measurements performed on the Co/Si/Co trilayer system show that when the Si layer thickness is less than ∼ 20 Å, the full Si layer is converted into a cobalt silicide layer whereas when the Si layer thickness > 20 Å along with the silicide layer. the pure Si layer also remains. A comparison of magneto-optical Kerr effect and magnetoresistance measurements reveals the absence of antiferromagnetic coupling in these samples. Double-step-like magnetization, in the case of Si layer thickness > 20 Å between two Co layers, is explained by magnetization reversal of two ferromagnetic layers having different coercivities, independent of each other.
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