Ion-beam-induced transformation of diamond

N+-ion implantation induced enhanced conductivity in polycrystalline and single crystal diamond

With the 200 keV N⁺-ion implantation technique and a systematic variation of fluence, we report on the formation of highly conducting n-type diamond where insulator-to-metal transition (IMT) is observed above a certain fluence wherein the conductivity no longer obeys the hopping mechanism of transport rather, it obeys quantum corrections to Boltzmann conductivity at concentrations of n_N ≥ 2 × 10²⁰ cm⁻³. The conductivity for ultra-nanocrystalline diamond is found to be high, ∼650 Ω⁻¹ cm⁻¹ with thermal activation energy E_a ∼ 4 meV. Interestingly, with gradual increase in fluence, the conductivity in polycrystalline diamond films has been seen to progress from the hopping mechanism of transport in the case of low fluence implantation to a semiconducting nature with medium fluence and finally a semi-metallic conduction is observed where percolation occurs giving an insulator-to-metal transition. XANES confirms that the long-range order in diamond films remains intact when implanted with low and medium fluences; while implantation at sufficiently high fluences >5 × 10¹⁶ cm⁻² leads to the formation of a disordered tetrahedral amorphous carbon network leading to metallic conduction resembling a metallic glass behaviour. XPS confirms that the sp² fraction increases gradually with fluence starting from only 6% in the case of low fluence implantations and saturates at 40–50% for implantation at high fluences. A similar observation can be made for single crystal diamond when implanted at high fluence; it retains long-range order but percolative transport takes place through defects or semi-amorphized regions.

The paper highlights the effect of nitrogen ion implantation on polycrystalline and single crystal diamond where we try to explain its structural and electrical transport behaviour in three different ion dose regimes: low, medium and high fluence respectively.

Probing the Nanostructure of Neutron-Irradiated Diamond Using Raman Spectroscopy

Disordering of crystal lattice induced by irradiation with fast neutrons and other high-energy particles is used for the deep modification of electrical and optical properties of diamonds via significant nanoscale restructuring and defects engineering. Raman spectroscopy was employed to investigate the nature of radiation damage below the critical graphitization level created when chemical vapor deposition and natural diamonds are irradiated by fast neutrons with fluencies from 1 × 10¹⁸ to 3 × 10²⁰ cm⁻² and annealed at the 100–1700 °C range. The significant changes in the diamond Raman spectra versus the neutron-irradiated conditions are associated with the formation of intrinsic irradiation-induced defects that do not completely destroy the crystalline feature but decrease the phonon coherence length as the neutron dose increases. It was shown that the Raman spectrum of radiation-damaged diamonds is determined by the phonon confinement effect and that the boson peak is present in the Raman spectra up to annealing at 800–1000 °C. Three groups of defect-induced bands (first group = 260, 495, and 730 cm⁻¹; second group = 230, 500, 530, 685, and 760 cm^–1; and third group = 335, 1390, 1415, and 1740 cm⁻¹) were observed in Raman spectra of fast-neutron-irradiated diamonds.

Tribological Properties of Ultrananocrystalline Diamond Films: Mechanochemical Transformation of Sliding Interfaces

Improving the tribological properties of materials in ambient and high vacuum tribo-conditions is useful for inter-atmospheric applications. Highly-hydrogenated and less-hydrogenated ultrananocrystalline diamond (UNCD) films with distinct microstructural characteristics were deposited on Ti–6Al–4 V alloy, by optimizing the plasma conditions in the chemical vapor deposition. Both the UNCD films showed less friction coefficient in ambient atmospheric tribo-contact conditions due to the passivation. This provides chemical stability to UNCD films under the tribo-mechanical stressed conditions which limits the transferlayer formation and conversion of UNCD phase into graphitization/amorphization. However, in the high vacuum tribo-conditions, highly-hydrogenated UNCD films showed low friction value which gradually increased to the higher magnitude at longer sliding cycles. The low friction coefficient was indicative of passivation provided by the hydrogen network intrinsically present in the UNCD films. It gradually desorbs and the dangling bonds are progressively activated in the contact regime, leading to a gradual increase in the friction value. In contrast, less-hydrogenated UNCD films do not exhibit low friction regime in high vacuum conditions due to the lack of internal passivation. In this case, the conversion of UNCD to amorphized carbon structure in the wear tracks and amorphous carbon (a-C) tribofilm formation on ball scars were observed.

Nanoscale investigation of enhanced electron field emission for silver ion implanted/post-annealed ultrananocrystalline diamond films

Silver (Ag) ions are implanted in ultrananocrystalline diamond (UNCD) films to enhance the electron field emission (EFE) properties, resulting in low turn-on field of 8.5 V/μm with high EFE current density of 6.2 mA/cm² (at an applied field of 20.5 V/μm). Detailed nanoscale investigation by atomic force microscopy based peak force-controlled tunneling atomic force microscopy (PF-TUNA) and ultra-high vacuum scanning tunneling microscopy (STM) based current imaging tunneling spectroscopy (CITS) reveal that the UNCD grain boundaries are the preferred electron emission sites. The two scanning probe microscopic results supplement each other well. However, the PF-TUNA measurement is found to be better for explaining the local electron emission behavior than the STM-based CITS technique. The formation of Ag nanoparticles induced abundant sp² nanographitic phases along the grain boundaries facilitate the easy transport of electrons and is believed to be a prime factor in enhancing the conductivity/EFE properties of UNCD films. The nanoscale understanding on the origin of electron emission sites in Ag-ion implanted/annealed UNCD films using the scanning probe microscopic techniques will certainly help in developing high-brightness electron sources for flat-panel displays applications.

Transmission Microscopy with Nanometer Resolution Using a Deterministic Single Ion Source

We realize a single particle microscope by using deterministically extracted laser-cooled ^{40}Ca^{+} ions from a Paul trap as probe particles for transmission imaging. We demonstrate focusing of the ions to a spot size of 5.8±1.0  nm and a minimum two-sample deviation of the beam position of 1.5 nm in the focal plane. The deterministic source, even when used in combination with an imperfect detector, gives rise to a fivefold increase in the signal-to-noise ratio as compared with conventional Poissonian sources. Gating of the detector signal by the extraction event suppresses dark counts by 6 orders of magnitude. We implement a Bayes experimental design approach to microscopy in order to maximize the gain in spatial information. We demonstrate this method by determining the position of a 1  μm circular hole structure to a precision of 2.7 nm using only 579 probe particles.

Enhanced electron field emission properties of conducting ultrananocrystalline diamond films after Cu and Au ion implantation

The effects of Cu and Au ion implantation on the structural and electron field emission (EFE) properties of ultrananocrystalline diamond (UNCD) films were investigated. High electrical conductivity of 186 (Ω•cm)(-1) and enhanced EFE properties with low turn-on field of 4.5 V/μm and high EFE current density of 6.70 mA/cm(2) have been detected for Au-ion implanted UNCD (Au-UNCD) films that are superior to those of Cu-ion implanted UNCD (Cu-UNCD) ones. Transmission electron microscopic investigations revealed that Au-ion implantation induced a larger proportion of nanographitic phases at the grain boundaries for the Au-UNCD films in addition to the formation of uniformly distributed spherically shaped Au nanoparticles. In contrast, for Cu-UNCD films, plate-like Cu nanoparticles arranged in the row-like pattern were formed, and only a smaller proportion of nanographite phases along the grain boundaries was induced. From current imaging tunneling spectroscopy and local current-voltage curves of scanning tunneling spectroscopic measurements, it is observed that the electrons are dominantly emitted from the grain boundaries. Consequently, the presence of nanosized Au particles and the induction of abundant nanographitic phases in the grain boundaries of Au-UNCD films are believed to be the authentic factors, ensuing in high electrical conductivity and outstanding EFE properties of the films.

Direct measurement and modelling of internal strains in ion-implanted diamond

We present a phenomenological model and finite element simulations to describe the depth variation of mass density and strain of ion-implanted single-crystal diamond. Several experiments are employed to validate the approach: firstly, samples implanted with 180 keV B ions at relatively low fluences are characterized using high-resolution x-ray diffraction; secondly, the mass density variation of a sample implanted with 500 keV He ions, well above its amorphization threshold, is characterized with electron energy loss spectroscopy. At high damage densities, the experimental depth profiles of strain and density display a saturation effect with increasing damage and a shift of the damage density peak towards greater depth values with respect to those predicted by TRIM simulations, which are well accounted for in the model presented here. The model is then further validated by comparing transmission electron microscopy-measured and simulated thickness values of a buried amorphous carbon layer formed at different depths by implantation of 500 keV He ions through a variable-thickness mask to simulate the simultaneous implantation of ions at different energies.

Investigations on diamond nanostructuring of different morphologies by the reactive-ion etching process and their potential applications

We report the systematic studies on the fabrication of aligned, uniform, and highly dense diamond nanostructures from diamond films of various granular structures. Self-assembled Au nanodots are used as a mask in the self-biased reactive-ion etching (RIE) process, using an O2/CF4 process plasma. The morphology of diamond nanostructures is a close function of the initial phase composition of diamond. Cone-shaped and tip-shaped diamond nanostructures result for microcrystalline diamond (MCD) and nanocrystalline diamond (NCD) films, whereas pillarlike and grasslike diamond nanostructures are obtained for Ar-plasma-based and N2-plasma-based ultrananocrystalline diamond (UNCD) films, respectively. While the nitrogen-incorporated UNCD (N-UNCD) nanograss shows the most-superior electron-field-emission properties, the NCD nanotips exhibit the best photoluminescence properties, viz, different applications need different morphology of diamond nanostructures to optimize the respective characteristics. The optimum diamond nanostructure can be achieved by proper choice of granular structure of the initial diamond film. The etching mechanism is explained by in situ observation of optical emission spectrum of RIE plasma. The preferential etching of sp(2)-bonded carbon contained in the diamond films is the prime factor, which forms the unique diamond nanostructures from each type of diamond films. However, the excited oxygen atoms (O*) are the main etching species of diamond film.

A Brief Review on theIn SituSynthesis of Boron-Doped Diamond Thin Films

Diamond thin films are well known for their unsurpassed physical and chemical properties. In the recent past, research interests in the synthesis of conductive diamond thin films, especially the boron-doped diamond (BDD) thin films, have risen up to cater to the requirements of electronic, biosensoric, and electrochemical applications. BDD thin films are obtained by substituting some of thesp3hybridized carbon atoms in the diamond lattice with boron atoms. Depending on diamond thin film synthesis conditions, boron doping routes, and further processing steps (if any), different types of BDD diamond thin films with application-specific properties can be obtained. This paper will review several important advances in the synthesis of boron-doped diamond thin films, especially those synthesized via gas phase manipulation.

Note: Laser ablation technique for electrically contacting a buried implant layer in single crystal diamond

The creation of thin, buried, and electrically conducting layers within an otherwise insulating diamond by annealed ion implantation damage is well known. Establishing facile electrical contact to the shallow buried layer has been an unmet challenge. We demonstrate a new method, based on laser micro-machining (laser ablation), to make reliable electrical contact to a buried implant layer in diamond. Comparison is made to focused ion beam milling.

Investigation of low-resistivity from hydrogenated lightly B-doped diamond by ion implantation

We have implanted boron (B) ions (dosage: 5×1014 cm-2) into diamond and then hydrogenated the sample by implantating hydrogen ions at room temperature. A p-type diamond material with a low resistivity of 7.37 mΩ cm has been obtained in our experiment, which suggests that the hydrogenation of B-doped diamond results in a low-resistivity p-type material. Interestingly, inverse annealing, in which carrier concentration decreased with increasing annealing temperature, was observed at annealing temperatures above 600 °C. In addition, the formation mechanism of a low-resistivity material has been studied by density functional theory calculation using a plane wave method.