First-principles pseudopotential study of the structural phases of silicon

First-principles study of point defects in U3Si2: effects on the mechanical and electronic properties

In recent years, U₃Si₂ has been proposed as an alternative nuclear fuel material to uranium dioxide (UO₂) because of its intrinsically high uranium density and thermal conductivity. However, the operation environment in the nuclear reactor is complex and extreme, such as in-pile neutron irradiation, and thus it is necessary to explore the radiation response behavior of U₃Si₂ and the physical properties of its damaged states. In the present study, first-principles calculations based on density functional theory were carried out to investigate the mechanical and electronic properties of defective U₃Si₂. Our results showed that the defect stability in U₃Si₂, except its interstitial defects, is dependent on its chemical environment. When vacancy, antisite or interstitial defects are introduced into U₃Si₂, its elastic modulus are decreased and its ductility is enhanced. Although the presence of defects in U₃Si₂ does not change its metallic nature and the electron distribution in its Fermi level, their effect on the partial chemical bonding interaction is significant. This study suggests that under a radiation environment, the created defects in U₃Si₂ remarkably affect its mechanical and electronic properties.

Anharmonic and Anomalous Trends in the High-Pressure Phase Diagram of Silicon

A multifaceted first-principles approach utilizing density functional theory, evolutionary algorithms, and lattice dynamics was used to construct the phase diagram of silicon up to 4 TPa and 26 000  K. These calculations predicted that (i) an anomalous sequence of face-centered cubic to body-centered cubic to simple cubic crystalline phase transitions occur at pressures of 2.87 and 3.89 TPa, respectively, along the cold curve, (ii) the orthorhombic phases of Imma and Cmce-16 appear on the phase diagram only when the anharmonic contribution to the Gibbs free energy is taken into account, and (iii) a substantial change in the slope of the principal Hugoniot is observed if the anharmonic free energy of the cubic diamond phase is considered.

Direct and quasi-direct band gap silicon allotropes with remarkable stability

Promising low energy direct or quasi-direct band gap semiconductors for solar cell application.

Equilibrium lines and barriers to phase transitions: the cubic diamond to beta-tin transition in Si from first principles

The phase transition between the cubic diamond (cd) and beta-tin (β-Sn) phases of Si under pressure and the region of interaction of the two phases are studied by first-principles total energy calculations. For a non-vibrating crystal we determine the pressure of the thermodynamic phase transition p(t) = 96 kbar, the Gibbs free energy barrier at p(t) of ΔG = 19.6 mRyd/atom that stabilizes the phases against a phase transition and the finite pressure range in which both phases are stable. We show that the phases in that pressure range are completely described by three equilibrium lines of states along which the structure, the total energy E, the hydrostatic pressure p that would stabilize the structure and the values of G all vary. Two equilibrium lines describe the two phases (denoted the ph-eq line, ph is cd or β-Sn phase); a third line is a line of saddle points of G with respect to structure (denoted the sp-eq line) that forms a barrier of larger G against instability of the metastable ranges of the phase lines. An important conclusion is that the sp-eq line merges with the two ph-eq lines: one end of the sp-eq line merges with the cd-eq line at high pressure, the other end merges with the β-Sn-eq line at low pressure. The mergers end the barrier protecting the metastable ranges of the two ph-eq lines, hence the lines go unstable beyond the mergers. The mergers thus simplify the phase diagram by providing a natural termination to the stable parts of all metastable ranges of the ph-eq lines. Although 96 kbar is lower than the experimental transition pressure, we note that phonon pressure raises the observed transition pressure.

Phase diagram of silicon from atomistic simulations

In this Letter we present a calculation of the temperature-pressure phase diagram of Si in a range of pressures covering from -5 to 20 GPa and temperatures up to the melting point. The phase boundaries and triple points between the diamond, liquid, beta-Sn, and Si34 clathrate phases are reported. We have employed efficient simulation techniques to calculate free energies and to numerically integrate the Clausius-Clapeyron equation, combined with a tight-binding model capable of an accuracy comparable to that of first-principles methods. The resulting phase diagram agrees well with the available experimental data.