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Romero AH, Allan DC, Amadon B, Antonius G, Applencourt T, Baguet L, Bieder J, Bottin F, Bouchet J, Bousquet E, Bruneval F, Brunin G, Caliste D, Côté M, Denier J, Dreyer C, Ghosez P, Giantomassi M, Gillet Y, Gingras O, Hamann DR, Hautier G, Jollet F, Jomard G, Martin A, Miranda HPC, Naccarato F, Petretto G, Pike NA, Planes V, Prokhorenko S, Rangel T, Ricci F, Rignanese GM, Royo M, Stengel M, Torrent M, van Setten MJ, Van Troeye B, Verstraete MJ, Wiktor J, Zwanziger JW, Gonze X. ABINIT: Overview and focus on selected capabilities. J Chem Phys 2020; 152:124102. [DOI: 10.1063/1.5144261] [Citation(s) in RCA: 90] [Impact Index Per Article: 22.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/15/2022] Open
Affiliation(s)
- Aldo H. Romero
- Physics and Astronomy Department, West Virginia University, Morgantown, West Virginia 26506-6315, USA
| | - Douglas C. Allan
- Corning Incorporated, SP-FR-05, Sullivan Park, Corning, New York 14831, USA
| | | | - Gabriel Antonius
- Dépt. de Chimie, Biochimie et Physique, Institut de recherche sur l’hydrogène, U. du Québec à Trois-Rivières, C.P. 500, Trois-Rivières (Quebec) G9A 5H7, Canada
| | | | - Lucas Baguet
- CEA DAM-DIF, F-91297 Arpajon, France
- IMPMC, UMR 7590 of Sorbonne Université/CNRS/MNHN/IRD, Paris, France
| | - Jordan Bieder
- CEA DAM-DIF, F-91297 Arpajon, France
- Theoretical Materials Physics/Q-Mat/CESAM, Université de Liège (B5), B-4000 Liège, Belgium
| | | | | | - Eric Bousquet
- Theoretical Materials Physics/Q-Mat/CESAM, Université de Liège (B5), B-4000 Liège, Belgium
| | - Fabien Bruneval
- DEN, Service de Recherches de Métallurgie Physique, CEA, Université Paris-Saclay, F-91191 Gif-sur Yvette, France
| | - Guillaume Brunin
- Institute of Condensed Matter and Nanoscience, UCLouvain, B-1348 Louvain-la-Neuve, Belgium
| | - Damien Caliste
- IRIG-MEM, L-SIM, University Grenoble Alpes, CEA, F-38000 Grenoble, France
| | - Michel Côté
- Dépt. de Physique, U. de Montréal, C.P. 6128, Succursale Centre-Ville, Montréal H3C 3J7, Canada
| | | | - Cyrus Dreyer
- Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854-8019, USA
- Department of Physics and Astronomy, Stony Brook University, Stony Brook, New York 11794-3800, USA
- Center for Computational Quantum Physics, Flatiron Institute, 162 5th Avenue, New York, New York 10010, USA
| | - Philippe Ghosez
- Theoretical Materials Physics/Q-Mat/CESAM, Université de Liège (B5), B-4000 Liège, Belgium
| | - Matteo Giantomassi
- Institute of Condensed Matter and Nanoscience, UCLouvain, B-1348 Louvain-la-Neuve, Belgium
- European Theoretical Spectroscopy Facility,
| | - Yannick Gillet
- Institute of Condensed Matter and Nanoscience, UCLouvain, B-1348 Louvain-la-Neuve, Belgium
| | - Olivier Gingras
- Dépt. de Physique, U. de Montréal, C.P. 6128, Succursale Centre-Ville, Montréal H3C 3J7, Canada
| | - Donald R. Hamann
- Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854-8019, USA
- Mat-Sim Research LLC, P.O. Box 742, Murray Hill, New Jersey 07974, USA
| | - Geoffroy Hautier
- Institute of Condensed Matter and Nanoscience, UCLouvain, B-1348 Louvain-la-Neuve, Belgium
| | | | - Gérald Jomard
- CEA, DEN, DEC, Cadarache, F-13108 Saint-Paul-Lez-Durance, France
| | - Alexandre Martin
- CEA DAM-DIF, F-91297 Arpajon, France
- Theoretical Materials Physics/Q-Mat/CESAM, Université de Liège (B5), B-4000 Liège, Belgium
| | - Henrique P. C. Miranda
- Institute of Condensed Matter and Nanoscience, UCLouvain, B-1348 Louvain-la-Neuve, Belgium
| | - Francesco Naccarato
- Institute of Condensed Matter and Nanoscience, UCLouvain, B-1348 Louvain-la-Neuve, Belgium
| | - Guido Petretto
- Institute of Condensed Matter and Nanoscience, UCLouvain, B-1348 Louvain-la-Neuve, Belgium
| | - Nicholas A. Pike
- European Theoretical Spectroscopy Facility,
- NanoMat/Q-Mat/CESAM, Université de Liège (B5), B-4000 Liège, Belgium
| | | | - Sergei Prokhorenko
- Theoretical Materials Physics/Q-Mat/CESAM, Université de Liège (B5), B-4000 Liège, Belgium
| | | | - Fabio Ricci
- Theoretical Materials Physics/Q-Mat/CESAM, Université de Liège (B5), B-4000 Liège, Belgium
| | - Gian-Marco Rignanese
- Institute of Condensed Matter and Nanoscience, UCLouvain, B-1348 Louvain-la-Neuve, Belgium
- European Theoretical Spectroscopy Facility,
| | - Miquel Royo
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, 08193 Bellaterra, Spain
| | - Massimiliano Stengel
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, 08193 Bellaterra, Spain
- ICREA - Institució Catalana de Recerca i Estudis Avançats, 08010 Barcelona, Spain
| | | | - Michiel J. van Setten
- Institute of Condensed Matter and Nanoscience, UCLouvain, B-1348 Louvain-la-Neuve, Belgium
- European Theoretical Spectroscopy Facility,
- IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
| | - Benoit Van Troeye
- Institute of Condensed Matter and Nanoscience, UCLouvain, B-1348 Louvain-la-Neuve, Belgium
- Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180, USA
| | - Matthieu J. Verstraete
- European Theoretical Spectroscopy Facility,
- NanoMat/Q-Mat/CESAM, Université de Liège (B5), B-4000 Liège, Belgium
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), Campus UAB, Bellaterra, 08193 Barcelona, Spain
| | - Julia Wiktor
- CEA, DEN, DEC, Cadarache, F-13108 Saint-Paul-Lez-Durance, France
- Department of Physics, Chalmers University of Technology, SE-412 96 Gothenburg, Sweden
| | - Josef W. Zwanziger
- Department of Chemistry, Dalhousie Univeristy, Halifax, Nova Scotia B3H 4R2, Canada
| | - Xavier Gonze
- Institute of Condensed Matter and Nanoscience, UCLouvain, B-1348 Louvain-la-Neuve, Belgium
- European Theoretical Spectroscopy Facility,
- Skolkovo Institute of Science and Technology, Moscow, Russia
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Ishibashi S, Uedono A, Kino H, Miyake T, Terakura K. Computational study of positron annihilation parameters for cation mono-vacancies and vacancy complexes in nitride semiconductor alloys. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2019; 31:475401. [PMID: 31429422 DOI: 10.1088/1361-648x/ab35a4] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
We calculate positron annihilation parameters, namely the S and W parameters from the Doppler broadening spectroscopy and the positron lifetime [Formula: see text], for defect-free states as well as cation mono-vacancies and vacancy complexes in nitride semiconductor alloys Al0.5Ga0.5N, In0.5Ga0.5N and Al0.5In0.5N. The obtained distributions of these parameters differ from compound to compound. Especially, the S-W relation for In0.5Ga0.5N is very different from that for Al0.5Ga0.5N. For the cation mono-vacancies, introducing local structural parameters, their correlations with S, W and [Formula: see text] are investigated. The S and [Formula: see text] variations are well described with the size distributions of the vacancies while the W variation is related to the presence of localized d electrons. For the vacancy complexes as well as the cation mono-vacancies, multiple-linear-regression models to describe S, W and [Formula: see text] are successfully constructed using the local structural parameters as descriptors. The S-W and S-[Formula: see text] relations are also compared with those for AlN, GaN and InN.
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Affiliation(s)
- Shoji Ishibashi
- Research Center for Computational Design of Advanced Functional Materials (CD-FMat), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan. Center for Materials Research by Information Integration (CMI2), Research and Services Division of Materials Data and Integrated System (MaDIS), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0047, Japan
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Reshchikov MA, Usikov A, Helava H, Makarov Y, Prozheeva V, Makkonen I, Tuomisto F, Leach JH, Udwary K. Evaluation of the concentration of point defects in GaN. Sci Rep 2017; 7:9297. [PMID: 28839151 PMCID: PMC5570983 DOI: 10.1038/s41598-017-08570-1] [Citation(s) in RCA: 47] [Impact Index Per Article: 6.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/18/2017] [Accepted: 07/13/2017] [Indexed: 12/03/2022] Open
Abstract
Photoluminescence (PL) was used to estimate the concentration of point defects in GaN. The results are compared with data from positron annihilation spectroscopy (PAS), secondary ion mass spectrometry (SIMS), and deep level transient spectroscopy (DLTS). Defect-related PL intensity in undoped GaN grown by hydride vapor phase epitaxy increases linearly with the concentration of related defects only up to 1016 cm-3. At higher concentrations, the PL intensity associated with individual defects tends to saturate, and accordingly, does not directly correlate with the concentration of defects. For this reason, SIMS analysis, with relatively high detection limits, may not be helpful for classifying unidentified point defects in GaN. Additionally, we highlight challenges in correlating defects identified by PL with those by PAS and DLTS methods.
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Affiliation(s)
- M A Reshchikov
- Department of Physics, Virginia Commonwealth University, Richmond, VA, 23284, USA.
| | - A Usikov
- Nitride Crystals, Inc, 181E Industry Ct., Ste. B, Deer Park, NY, 11729, USA
- Saint-Petersburg National Research University of Information Technologies, Mechanics and Optics, 49 Kronverkskiy Ave, 197101, Saint Petersburg, Russia
| | - H Helava
- Nitride Crystals, Inc, 181E Industry Ct., Ste. B, Deer Park, NY, 11729, USA
| | - Yu Makarov
- Nitride Crystals, Inc, 181E Industry Ct., Ste. B, Deer Park, NY, 11729, USA
| | - V Prozheeva
- Department of Applied Physics, Aalto University, 00076, Aalto, Finland
| | - I Makkonen
- Department of Applied Physics, Aalto University, 00076, Aalto, Finland
| | - F Tuomisto
- Department of Applied Physics, Aalto University, 00076, Aalto, Finland
| | - J H Leach
- Kyma Technologies, Inc, Raleigh, North Carolina, 27617, USA
| | - K Udwary
- Kyma Technologies, Inc, Raleigh, North Carolina, 27617, USA
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