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For: Buyanova IA, Chen WM, Henry A, Ni W, Hansson GV, Monemar B. Effect of ion bombardment on deep photoluminescence bands in p-type boron-modulation-doped Si layers grown by molecular-beam epitaxy. Phys Rev B Condens Matter 1995;52:12006-12012. [PMID: 9980340 DOI: 10.1103/physrevb.52.12006] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]

For:	Buyanova IA, Chen WM, Henry A, Ni W, Hansson GV, Monemar B. Effect of ion bombardment on deep photoluminescence bands in p-type boron-modulation-doped Si layers grown by molecular-beam epitaxy. Phys Rev B Condens Matter 1995;52:12006-12012. [PMID: 9980340 DOI: 10.1103/physrevb.52.12006] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]

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(The first 100,000 artilces are displayed in RCA.)