Direct observation of electron relaxation in intrinsic GaAs using femtosecond pump-probe spectroscopy

Ultrafast nonequilibrium dynamic process of separate electrons and holes during exciton formation in few-layer tungsten disulfide

Femtosecond transient absorption spectroscopy has been employed to unravel separate initial nonequilibrium dynamic processes of photo-injected electrons and holes during the formation process of the lowest excitons at the K-valley in few-layer tungsten disulfide. Charge carrier thermalization and cooling, as well as concomitant many-body effects on the exciton resonances, are distinguished. The thermalization of holes is observed to be faster than that of electrons. Both of them proceed predominantly via carrier-carrier scattering, as evidenced by the observed dependence of the thermalization time on pump fluences. The fluence dependent time constants also suggest that the subsequent cooling for electrons is probably dominated by acoustic phonons, whereas for holes it is mostly controlled by LO phonons. An extremely fast red- and blue-shift crossover followed by a slow blue-shift of exciton resonance was observed in the temporal evolution of exciton resonances by resonant exciton A excitation. The rapid red-shift could be due to the strong screening of the Coulomb interaction between quasi-free charge carriers in electron-hole plasma. The subsequent slow blue-shift is the net result of the competition among many-body effects in the hot-exciton cooling process. Our findings elucidate the carrier-selective ultrafast dynamics and their many-body effects, underpinning new possibilities for developing optoelectronic devices based on transport properties of a single type of carrier.

Hot electron relaxation dynamics in semiconductors: assessing the strength of the electron-phonon coupling from the theoretical and experimental viewpoints

The rapid development of the computational methods based on density functional theory, on the one hand, and of time-, energy-, and momentum-resolved spectroscopy, on the other hand, allows today an unprecedently detailed insight into the processes governing hot-electron relaxation dynamics, and, in particular, into the role of the electron-phonon coupling. Instead of focusing on the development of a particular method, theoretical or experimental, this review aims to treat the progress in the understanding of the electron-phonon coupling which can be gained from both, on the basis of recently obtained results. We start by defining several regimes of hot electron relaxation via electron-phonon coupling, with respect to the electron excitation energy. We distinguish between energy and momentum relaxation of hot electrons, and summarize, for several semiconductors of the IV and III-V groups, the orders of magnitude of different relaxation times in different regimes, on the basis of known experimental and numerical data. Momentum relaxation times of hot electrons become very short around 1 eV above the bottom of the conduction band, and such ultrafast relaxation mechanisms are measurable only in the most recent pump-probe experiments. Then, we give an overview of the recent progress in the experimental techniques allowing to obtain detailed information on the hot-electron relaxation dynamics, with the main focus on time-, energy-, and momentum-resolved photoemission experiments. The particularities of the experimental approach developed by one of us, which allows to capture time-, energy-, and momentum-resolved hot-electron distributions, as well as to measure momentum relaxation times of the order of 10 fs, are discussed. We further discuss the main advances in the calculation of the electron-phonon scattering times from first principles over the past ten years, in semiconducting materials. Ab initio techniques and efficient interpolation methods provide the possibility to calculate electron-phonon scattering times with high precision at reasonable numerical cost. We highlight the methods of analysis of the obtained numerical results, which allow to give insight into the details of the electron-phonon scattering mechanisms. Finally, we discuss the concept of hot electron ensemble which has been proposed recently to describe the hot-electron relaxation dynamics in GaAs, the applicability of this concept to other materials, and its limitations. We also mention some open problems.

Sub-Picosecond Auger-Mediated Hole-Trapping Dynamics in Colloidal CdSe/CdS Core/Shell Nanoplatelets

Quasi-two-dimensional colloidal nanoplatelets (NPLs) have recently emerged as a class of semiconductor nanomaterials whose atomically precise monodisperse thicknesses give rise to narrow absorption and emission spectra. However, the sub-picosecond carrier dynamics of NPLs at the band edge remain largely unknown, despite their importance in determining the optoelectronic properties of these materials. Here, we use a combination of femtosecond transient absorption spectroscopy and nonadiabatic molecular dynamics simulations to investigate the early time carrier dynamics of CdSe/CdS core/shell NPLs. Band-selective probing reveals sub-picosecond Auger-mediated trapping of holes with an effective second-order rate constant of 3.5 ± 1.0 cm²/s. Concomitant spectral blue shifts that are indicative of Auger hole heating are found to occur on the same time scale as the sub-picosecond trapping dynamics, whereas spectral red shifts that emerge at low excitation densities furnish an electron-cooling time scale of 0.84 ± 0.09 ps. Finally, nonadiabatic molecular dynamics simulations relate the observed sub-picosecond Auger-mediated hole-trapping dynamics to a shallow trap state that originates from the incomplete passivation of dangling bonds on the NPL surface.

Theory of coherent phonons in carbon nanotubes and graphene nanoribbons

We survey our recent theoretical studies on the generation and detection of coherent radial breathing mode (RBM) phonons in single-walled carbon nanotubes and coherent radial breathing like mode (RBLM) phonons in graphene nanoribbons. We present a microscopic theory for the electronic states, phonon modes, optical matrix elements and electron-phonon interaction matrix elements that allows us to calculate the coherent phonon spectrum. An extended tight-binding (ETB) model has been used for the electronic structure and a valence force field (VFF) model has been used for the phonon modes. The coherent phonon amplitudes satisfy a driven oscillator equation with the driving term depending on the photoexcited carrier density. We discuss the dependence of the coherent phonon spectrum on the nanotube chirality and type, and also on the graphene nanoribbon mod number and class (armchair versus zigzag). We compare these results with a simpler effective mass theory where reasonable agreement with the main features of the coherent phonon spectrum is found. In particular, the effective mass theory helps us to understand the initial phase of the coherent phonon oscillations for a given nanotube chirality and type. We compare these results to two different experiments for nanotubes: (i) micelle suspended tubes and (ii) aligned nanotube films. In the case of graphene nanoribbons, there are no experimental observations to date. We also discuss, based on the evaluation of the electron-phonon interaction matrix elements, the initial phase of the coherent phonon amplitude and its dependence on the chirality and type. Finally, we discuss previously unpublished results for coherent phonon amplitudes in zigzag nanoribbons obtained using an effective mass theory.

Charge and spin dynamics in a two-dimensional electron gas

A number of time-resolved optical experiments probing and controlling the spin and charge dynamics of the high-mobility two-dimensional electron gas in a GaAs/AlGaAs heterojunction are discussed. These include time-resolved reflectivity, luminescence, transient grating, magneto-optical Kerr effect, and electro-optical Kerr effect experiments. The optical experiments provide information on the carrier lifetimes and spin dephasing times, as well as on the carrier diffusion coefficient which directly gives the charge mobility. A combination of the two types of Kerr experiment proves to be useful in extracting both the carrier lifetimes and spin dephasing times in a single experiment.