Perpendicular magnetic anisotropy, domains, and misfit strain in epitaxial Ni/Cu1-xNix/Cu/Si (001) thin films

Valley polarization and magnetic anisotropy of two-dimensional Ni2Cl3I3/MoSe2 heterostructures

Two-dimensional (2D) Janus trihalides have attracted widespread attention due to their potential applications in spintronics. In this work, the valley polarization of MoSe2 at the K' and K points can be modulated by Ni2Cl3I3, a new 2D Janus trihalide. The Ni2Cl3I3/MoSe2 heterostructure has an in-plane magnetic anisotropy energy (IMA) and is characterized by three distinct electronic structures: metallic, semiconducting, and half-metallic. It is noted that the semiconducting state features a band gap of 0.07 eV. When spin-orbit coupling (SOC) is considered, valley polarization is exhibited in the Ni2Cl3I3/MoSe2 heterostructure, with the degree of valley polarization varying across different configurations and reaching a maximum value of 4.6 meV. The electronic properties, valley polarization and MAE of the system can be tuned by biaxial strains. The application of a biaxial strain ranging from -6% to +6% can enhance the valley polarization value from 0.9 meV to 12.9 meV. The directions of MAE of the Ni2Cl3I3/MoSe2 heterostructure can be changed at biaxial strains of -6%, +2%, +4% and +6%. The above calculation results show that the heterostructure system possesses rich electronic properties and tunability, with extensive potential applications in the fields of spintronic and valleytronic devices.

Impact of a rubrene buffer layer on the dynamic magnetic behavior of nickel layers on Si(100)

Interfaces of ferromagnetic/organic material hybrid structures refer to the spin interface that governs physical properties for achieving high spin polarization, low impedance mismatch, and long spin relaxation. Spintronics can add new functionalities to electronic devices by taking advantage of the spin degree of freedom of electrons, which makes understanding the dynamic magnetic properties of magnetic films important for spintronic device applications. Our knowledge regarding the magnetic dynamics and magnetic anisotropy of combining ferromagnetic layer and organic semiconductor by microwave-dependent magnetic measurements remains limited. Herein, we report the impact of an organic layer on the dynamic magnetic behavior of nickel/rubrene bilayers deposited on a Si(100) substrate. From magnetic dynamic measurements, opposite signs of effective magnetic fields between the in-plane (IP) and out-of-plane (OP) configurations suggest that the magnetization of Ni(x)/rubrene/Si prefers to coexist. A shift in OP resonance fields to higher values can mainly be attributed to the enhanced second-order anisotropy parameter K2 value. Based on IP measurements, a two-magnon scattering mechanism is dominant for thin Ni(x)/rubrene/Si bilayers. By adding a rubrene layer, the highly stable IP combined with the tunable OP ferromagnetic resonance spectra for Ni(x)/rubrene/Si bilayers make them promising materials for use in microwave magnetic devices and spintronics with controllable perpendicular magnetic anisotropy.

Dirac semimetallic Janus Ni-trihalide monolayer with strain-tunable magnetic anisotropy and electronic properties

Two-dimensional (2D) ferromagnetic (FM) semiconductors have been paid much attention due to the potential applications in spintronics. Here, the electronic and magnetic properties of 2D Janus Ni-trihalide monolayer Ni2X3Y3 (X, Y = I, Br, Cl; X ≠ Y) are investigated by first-principle calculations. The properties of Ni2X3Y3 (X, Y = I, Br, Cl; X ≠ Y) monolayers are compared by selecting the NiCl3 monolayer as the reference material. Ni2X3Y3 monolayers have two distinct magnetic ground states of ferromagnetic (FM) and antiferromagnetic (AFM). In the Ni2X3Y3 monolayer, two different orbital splits were observed, one semiconductor state and the other semimetal state. The semimetal state of Ni2X3Y3 can be tuned to semiconductor or metallic state when biaxial strain is applied. The magnetic anisotropy energy (MAE) of the Ni2X3Y3 monolayer can display variations compared to that of the NiCl3 monolayer, with the direction of easy magnetization being influenced by the specific halogen elements present. The easy magnetization direction of Ni2X3Y3 can also be changed by applying biaxial strain. The Tc of Ni2X3Y3 is predicted to be about 100 K according to the calculation of the EAFM-EFM model. The design of the Janus Ni2X3Y3 structure has expanded the range of 2D magnetic materials, a significant contribution has been made to the advancement of spintronics and its applications.

Dynamical behaviour of ultrathin [CoFeB (tCoFeB)/Pd] films with perpendicular magnetic anisotropy

CoFeB-based ultrathin films with perpendicular magnetic anisotropy are promising for different emerging technological applications such as nonvolatile memories with low power consumption and high-speed performance. In this work, the dynamical properties of [CoFeB (t_CoFeB)/Pd (10 Å)]₅ multilayered ultrathin films (1 Å ≤ t_CoFeB ≤ 5 Å) are studied by using two complementary methods: time-resolved magneto-optical Kerr effect and broadband ferromagnetic resonance. The perpendicular magnetization is confirmed for multilayers with t_CoFeB ≤ 4 Å. The effective perpendicular magnetic anisotropy reaches a clear maximum at t_CoFeB = 3 Å. Further increase of CoFeB layer thickness reduces the perpendicular magnetic anisotropy and the magnetization became in-plane oriented for t_CoFeB ≥ 5 Å. This behaviour is explained by considering competing contributions from surface and magnetoelastic anisotropies. It was also found that the effective damping parameter α_eff decreases with CoFeB layer thickness and for t_CoFeB = 4 Å reaches a value of ~ 0.019 that is suitable for microwave applications.

Strong electric field tuning of magnetism in self-biased multiferroic structures

A new type of multiferroic heterostructure has been proposed in this work with strong electric field tuning of magnetism. It is composed of a self-biased magnetic layered structure with perpendicular magnetic anisotropy (PMA) and one piezoelectric substrate. Two configurations were investigated by a modeling approach, Ni/Ni/Ni/PMN-PT with Cu as spacer and Terfenol-D/CoFeB/Ni/PMN-PT. Magnetic multilayers at their resonance exhibit multiple absorption peaks from acoustic and optical modes of spin interaction between adjacent magnetic layers. A piezoelectric substrate transfers electric field induced strain to adjacent magnetic layer and thus shifts resonance frequencies of the multiferroic structure by tuning magnetic effective fields through magnetoelastic coupling. It has been demonstrated computationally that the resonance frequencies for the simulated structures could be up to 76 GHz under zero magnetic bias field. A larger tunability (> 100%) is achieved with applied electric field to the PMN-PT [011] substrate. Resonance mode selectivity is present in the configuration Terfenol-D/CoFeB/Ni/PMN-PT wherein one desired mode exhibits a much higher tunability compared to other modes. This enables the total mode number to be tuned by merging or diverging different modes under E-field.

Voltage-induced strain clocking of nanomagnets with perpendicular magnetic anisotropies

Nanomagnetic logic (NML) has attracted attention during the last two decades due to its promise of high energy efficiency combined with non-volatility. Data transmission in NML relies on Bennett clocking through dipole interaction between neighboring nanomagnetic bits. This paper uses a fully coupled finite element model to simulate Bennett clocking based on strain-mediated multiferroic system for Ni, CoFeB and Terfenol-D with perpendicular magnetic anisotropies. Simulation results demonstrate that Terfenol-D system has the highest energy efficiency, which is 2 orders of magnitude more efficient than Ni and CoFeB. However, the high efficiency is associated with switching incoherency due to its large magnetostriction coefficient. It is also suggested that the CoFeB clocking system has lower bit-density than in Ni or Terfenol-D systems due to its large dipole coupling. Moreover, we demonstrate that the precessional perpendicular switching and the Bennett clocking can be achieved using the same strain-mediated multiferroic architecture with different voltage pulsing. This study opens new possibilities to an all-spin in-memory computing system.

Microscopic analysis of the composition driven spin-reorientation transition in Ni(x)Pd(1-x)/Cu(001)

The spin-reorientation transition (SRT) in epitaxial NixPd1-x/Cu(001) is studied by photoemission microscopy utilizing the X-ray magnetic circular dichroism effect at the Ni L2,3 edge. In a composition/thickness wedged geometry, a composition driven SRT could be observed between 37 ML and 60 ML, and 0 and 38% of Pd. Microspectroscopy in combination with azimuthal sample rotation confirms a magnetization preference changing from the [001] to an in-plane easy axis. At this increased thickness, the domain patterns arrange comparable to SRTs in ultrathin films. The images document domains equivalent to a canted state SRT, at which an additional effect of in-plane anisotropies could be identified.

Local light-induced magnetization using nanodots and chiral molecules

With the increasing demand for miniaturization, nanostructures are likely to become the primary components of future integrated circuits. Different approaches are being pursued toward achieving efficient electronics, among which are spin electronics devices (spintronics). In principle, the application of spintronics should result in reducing the power consumption of electronic devices. Recently a new, promising, effective approach for spintronics has emerged, using spin selectivity in electron transport through chiral molecules. In this work, using chiral molecules and nanocrystals, we achieve local spin-based magnetization generated optically at ambient temperatures. Through the chiral layer, a spin torque can be transferred without permanent charge transfer from the nanocrystals to a thin ferromagnetic layer, creating local perpendicular magnetization. We used Hall sensor configuration and atomic force microscopy (AFM) to measure the induced local magnetization. At low temperatures, anomalous spin Hall effects were measured using a thin Ni layer. The results may lead to optically controlled spintronics logic devices that will enable low power consumption, high density, and cheap fabrication.

A chiral-based magnetic memory device without a permanent magnet

Several technologies are currently in use for computer memory devices. However, there is a need for a universal memory device that has high density, high speed and low power requirements. To this end, various types of magnetic-based technologies with a permanent magnet have been proposed. Recent charge-transfer studies indicate that chiral molecules act as an efficient spin filter. Here we utilize this effect to achieve a proof of concept for a new type of chiral-based magnetic-based Si-compatible universal memory device without a permanent magnet. More specifically, we use spin-selective charge transfer through a self-assembled monolayer of polyalanine to magnetize a Ni layer. This magnitude of magnetization corresponds to applying an external magnetic field of 0.4 T to the Ni layer. The readout is achieved using low currents. The presented technology has the potential to overcome the limitations of other magnetic-based memory technologies to allow fabricating inexpensive, high-density universal memory-on-chip devices.

Most new device concepts for random-access memory are based on inorganic spin filters, which need a permanent magnet to operate. Here, the authors exploit the chiral-induced spin selectivity effect in an organic spin filter to construct a novel type of memory device, which works without a permanent magnet.

In Situ Stress and Strain Measurements During the Growth of Cu/Ni (001) Multilayers

Cu/Ni (001) multilayers have been grown by molecular beam epitaxy at room temperature. In-situ electron diffraction and curvature measurements performed during the growth are presented. The average lattice parameter in the equiatomic multilayers evolves gradually towards the alloy lattice parameter. The in-plane lattice parameter of both Cu and Ni evolves continuously towards the bulk lattice parameter with no evidence of pseudomorphic growth. The combination of diffraction and curvature measurements suggests that the Ni on Cu interface is diffuse. This is attributed to the surfactant behaviour of Cu. This results shed new insights into the interesting magnetic properties of Ni films on Cu (001).

Structure and magnetic properties of Ni/Cu/Fe/MgO(001) films

The structural and magnetic properties of thin Ni films grown on Cu/Fe/MgO(001) and Cu/MgO(001) buffer layers are investigated and compared to those grown on Cu/Si(001). The use of an Fe seed layer a few monolayers thick leads to the epitaxial growth of high surface quality Cu(001) buffer layers on MgO(001), while Cu growth on the bare MgO(001) substrate results in polycrystalline films. Magneto-optic Kerr effect magnetometry shows that Ni films grown on Cu/Fe/MgO(001) exhibit dominant perpendicular magnetic anisotropy up to ∼90 Å, which is similar to that of Ni films grown on Cu/Si(001). The polycrystalline Ni films also exhibit perpendicular magnetic remanence, but with a dominant in-plane magnetization component.

Remanence due to wall magnetization and counterintuitive magnetometry data in 200-nm films of Ni

200-nm-thick Ni films in an epitaxial Cu/Ni/Cu/Si(001) structure are expected to have an in-plane effective magnetic anisotropy. However, the in-plane remanence is only 42%, and magnetic force microscopy domain images suggest perpendicular magnetization. Quantitative magnetic force microscopy analysis can resolve the inconsistencies and show that (i) the films have perpendicular domains capped by closure domains with magnetization canted at 51 degrees from the film normal, (ii) the magnetization in the Bloch domain walls between the perpendicular domains accounts for the low in-plane remanence, and (iii) the perpendicular magnetization process requires a short-range domain wall motion prior to wall-magnetization rotation and is nonhysteretic, whereas the in-plane magnetization requires long-range motion before domain-magnetization rotation and is hysteretic.