Electronic properties of hydrogen-derived complexes in silicon

Formation Of Hydrogen Molecules In Crystalline Silicon Treated With Atomic Hydrogen

Hydrogen molecules have been formed in crystalline silicon at various temperatures by a hydrogen-atom remote treatment. The Raman spectrum of the vibrational lines of hydrogen molecules in crystalline silicon is detected for silicon samples treated at temperatures between 250 and 500° C. The maximum production is obtained at 400° C. The Raman spectrum of hydrogen molecules in silicon observed at room temperature exhibits a frequency shift of around 4158 cm−1 and a very broad half-width of approximately 34 cm−1. Isotope shift also can be observed at around 2990 cm−1 in silicon treated with deuterium atoms at 400° C. The frequency shifts of the observed lines are in close agreement with those reported for molecular hydrogen and deuterium in gas, liquid, and solid phases. We discuss a model for the hydrogen molecule configuration and rule out the possibility of high-pressure hydrogen molecular gas in microvoids in crystalline silicon. These results indicate that hydrogen molecules exist at the tetrahedral interstitial sites in crystalline silicon.