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For: Heun S, Sugiyama M, Maeyama S, Watanabe Y, Wada K, Oshima M. Growth of Si on different GaAs surfaces: A comparative study. Phys Rev B Condens Matter 1996;53:13534-13541. [PMID: 9983099 DOI: 10.1103/physrevb.53.13534] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]

For:	Heun S, Sugiyama M, Maeyama S, Watanabe Y, Wada K, Oshima M. Growth of Si on different GaAs surfaces: A comparative study. Phys Rev B Condens Matter 1996;53:13534-13541. [PMID: 9983099 DOI: 10.1103/physrevb.53.13534] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]

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(The first 100,000 artilces are displayed in RCA.)