Band structure of holes in p-type delta -doping quantum wells and superlattices

Electrical tuning of helical edge states in topological multilayers

Mainstream among topological insulators, GaSb/InAs quantum wells present a broken gap alignment for the energy bands which supports the quantum spin Hall insulator phase and forms an important building block in the search of exotic states of matter. Such structures allow the band-gap inversion with electrons and holes confined in adjacent layers, providing a fertile ground to tune the corresponding topological properties. Using a full 3D eight-band [Formula: see text] method we investigate the inverted band structure of GaSb/InAs/GaSb and InAs/GaSb/InAs multilayers and the behavior of the helical edge states, under the influence of an electric field applied along the growth direction. By tuning the electric field modulus, we induce the change of the energy levels of both conduction and valence bands, resulting in a quantum spin Hall insulator phase where the helical edge states are predominantly confined in the GaSb layer. In particular, we found that InAs/GaSb/InAs has a large hybridization gap of about [Formula: see text] and, therefore, are promising to observe massless Dirac fermions with a large Fermi velocity. Our comprehensive characterization of GaSb/InAs multilayers creates a basis platform upon which further optimization of III-V heterostructures can be contrasted.

Theoretical luminescence spectra in p-type superlattices based on InGaAsN

In this work, we present a theoretical photoluminescence (PL) for p-doped GaAs/InGaAsN nanostructures arrays. We apply a self-consistent k→p→ method in the framework of the effective mass theory. Solving a full 8 × 8 Kane's Hamiltonian, generalized to treat different materials in conjunction with the Poisson equation, we calculate the optical properties of these systems. The trends in the calculated PL spectra, due to many-body effects within the quasi-two-dimensional hole gas, are analyzed as a function of the acceptor doping concentration and the well width. Effects of temperature in the PL spectra are also investigated. This is the first attempt to show theoretical luminescence spectra for GaAs/InGaAsN nanostructures and can be used as a guide for the design of nanostructured devices such as optoelectronic devices, solar cells, and others.