Temperature dependence of the photoluminescence of ZnSe/ZnS quantum-dot structures

Temperature-Dependent Photoluminescence of CdS/ZnS Core/Shell Quantum Dots for Temperature Sensors

Exploring the temperature-dependent photoluminescence (PL) properties of quantum dots (QDs) is not only important for understanding the carrier recombination processes in QD-based devices but also critical for expanding their special applications at different temperatures. However, there is still no clear understanding of the optical properties of CdS/ZnS core/shell QDs as a function of temperature. Herein, the temperature-dependent PL spectra of CdS/ZnS core/shell QDs were studied in the temperature range of 77-297 K. It was found that the band-edge emission (BEE) intensity decreases continuously with increasing temperature, while the surface-state emission (SSE) intensity first increases and then decreases. For BEE intensity, in the low temperature range, a small activation energy (29.5 meV) in the nonradiative recombination process led to the decrease of PL intensity of CdS/ZnS core/shell QDs; and at high temperature the PL intensity attenuation was caused by the thermal escape process. On the other hand, the temperature-dependent variation trend of the SSE intensity was determined by the competition of the trapping process of the surface trap states and the effect of thermally activated non-radiative defects. As the temperature increased, the PL spectra showed a certain degree of redshift in the peak energies of both band-edge and surface states and the PL spectrum full width at half-maximum (FWHM) increases, which was mainly due to the coupling of exciton and acoustic phonon. Furthermore, the CIE chromaticity coordinates turned from (0.190, 0.102) to (0.302, 0.194), which changed dramatically with temperature. The results indicated that the CdS/ZnS core/shell QDs are expected to be applied in temperature sensors.

Highly Efficient and Stable CdZnSeS/ZnSeS Quantum Dots for Application in White Light-Emitting Diode

Semiconductor quantum dots (QDs) are a promising luminescent phosphor for next-generation lightings and displays. In particular, QD-based white light-emitting diodes (WLEDs) are considered to be the candidate light sources with the most potential for application in displays. In this work, we synthesized quaternary/ternary core/shell alloyed CdZnSeS/ZnSeS QDs with high bright emission intensity. The QDs show good thermal stability by performing high temperature-dependent experiments that range from 295 to 433 K. Finally, the WLED based on the CdZnSeS/ZnSeS QDs exhibits a luminous efficiency (LE) of 28.14 lm/W, an external quantum efficiency (EQE) of 14.86%, and a warm bright sunlight close to the spectrum of daylight (Commission Internationale de l'éclairage (CIE) coordinates 0.305, 0.371). Moreover, the photoluminescence (PL) intensity, LE, EQE, and correlated color temperature (CCT) of as-prepared QD WLED remained relatively stable with only slight changes in the luminescence stability experiment.

Sensing with photoluminescent semiconductor quantum dots

Fluorescent sensors benefit from high signal-to-noise and multiple measurement modalities, enabling a multitude of applications and flexibility of design. Semiconductor nanocrystal quantum dots (QDs) are excellent fluorophores for sensors because of their extraordinary optical properties. They have high thermal and photochemical stability compared to organic dyes or fluorescent proteins and are extremely bright due to their large molar cross-sections. In contrast to organic dyes, QD emission profiles are symmetric, with relatively narrow bandwidths. In addition, the size tunability of their emission color, which is a result of quantum confinement, make QDs exceptional emitters with high color purity from the ultra-violet to near infrared wavelength range. The role of QDs in sensors ranges from simple fluorescent tags, as used in immunoassays, to intrinsic sensors that utilize the inherent photophysical response of QDs to fluctuations in temperature, electric field, or ion concentration. In more complex configurations, QDs and biomolecular recognition moieties like antibodies are combined with a third component to modulate the optical signal via energy transfer. QDs can act as donors, acceptors, or both in energy transfer-based sensors using Förster resonance energy transfer (FRET), nanometal surface energy transfer (NSET), or charge or electron transfer. The changes in both spectral response and photoluminescent lifetimes have been successfully harnessed to produce sensitive sensors and multiplexed devices. While technical challenges related to biofunctionalization and the high cost of laboratory-grade fluorimeters have thus far prevented broad implementation of QD-based sensing in clinical or commercial settings, improvements in bioconjugation methods and detection schemes, including using simple consumer devices like cell phone cameras, are lowering the barrier to broad use of more sensitive QD-based devices.

Improved performance of GaAsSb/AlGaAs nanowire ensemble Schottky barrier based photodetector via in situ annealing

In this work, we report on the p-i GaAsSb/AlGaAs nanowires (NWs) ensemble device exhibiting good spectral response up to 1.1 μm with a high responsivity of 311 A W^-1, an external quantum efficiency of 6.1 × 10⁴%, and a detectivity of 1.9 × 10¹⁰ Jones at 633 nm. The high responsivity of the NWs has been attributed to in situ post-growth annealing of GaAsSb axial NWs in the ultra-high vacuum. The enabling growth technology is molecular beam epitaxy for the Ga-assisted epitaxial growth of these NWs on Si (111) substrates. Room temperature Raman spectra, as well as temperature dependent micro-photoluminescence peak analysis indicated suppression of band tail states and non-radiative channels due to annealing. A similar improvement in in situ annealed p-i GaAsSb NW ensemble with an AlGaAs passivating shell was inferred from a reduction in the Schottky barrier height as well as the NW resistance compared to the as-grown NW ensemble. These results demonstrate in situ annealing of nanowires to be an effective pathway for improving the optoelectronic properties of the NWs and the device thereof.

Accurate intracellular and in vivo temperature sensing based on CuInS2/ZnS QD micelles

We found that core–shell CuInS₂/ZnS QDs have obvious temperature dependence and they can be used for accurate intracellular and in vivo temperature sensing after being encapsulated by micelles, which exhibit high intracellular and in vivo thermal sensitivity.

Time resolved and temperature dependence of the radiative properties of thiol-capped CdS nanoparticles films

In this work, we present the temperature-dependence and time-resolved photoluminescence (PL) of CdS nanoparticles capped independently with three different ligands thiophenol, thioglycerol, and l-cysteine over a broad temperature range from 10 to 300 K. The respective nanoparticles sizes in the three systems studied in this work are 1.5, 4, and 2 nm as determined from X-ray diffraction (XRD). From the analysis of AFM images, it was found that the lateral particle sizes of capped CdS nanoparticles are greater than those deduced from XRD or optical absorption measurements. The aim of this study is the investigation of the impact of the organic ligands on the radiative recombination dynamics in organically capped CdS nanoparticles. From the PL study and based on the temperature-dependence and time-resolved emission spectroscopy, we conclude that the emission of CdS QDs film originates from recombination of the delocalized carriers in the internal core states with a small contribution of the localized carriers at the interface. The PL decay reveals a biexponential behavior for the entire three samples at all temperatures. One of the two exponential components decays rapidly with a time τ₁ in the range 0.5-0.8 ns, whereas the other decays much more slowly, with a time τ₂ in the range 1-3 ns. The weak activation energy (32-37 meV) deduced from the temperature dependence of the PL intensity suggests the involvement of shallow traps. The analysis of the experimental results reveals a relatively narrow size distribution, an efficient surface passivation, and a satisfactory thermal stability of CdS nanocrystals.

CdSe(ZnS) nanocomposite luminescent high temperature sensor

High temperature luminescence-based sensing is demonstrated by embedding colloidal CdSe(ZnS) quantum dots into a high temperature SiO(2) dielectric matrix. The nanocomposite was fabricated by a solution process method. As-prepared CdSe(ZnS) quantum dots in the nanocomposite sensor show an absorption band at a wavelength of 600 nm (2.06 eV). Photoluminescence (PL) measurements show a room temperature emission peak at 606 nm (2.04 eV). The temperature-dependent emission spectra study shows for the first time a CdSe(ZnS)-SiO(2) nanocomposite-based high temperature sensor. The temperature-dependent spectral and intensity modes of the nanocomposite thin film photoluminescence were investigated from 295-525 K. The sensor shows a variation of the emission wavelength as a function of temperature with a sensitivity of ∼ 0.11 nm °C( - 1). The film morphology and roughness are characterized using AFM.

Optical Fiber Sensing Using Quantum Dots

Recent advances in the application of semiconductor nanocrystals, or quantumdots, as biochemical sensors are reviewed. Quantum dots have unique optical properties thatmake them promising alternatives to traditional dyes in many luminescence basedbioanalytical techniques. An overview of the more relevant progresses in the application ofquantum dots as biochemical probes is addressed. Special focus will be given toconfigurations where the sensing dots are incorporated in solid membranes and immobilizedin optical fibers or planar waveguide platforms.

Optical properties and carrier dynamics of self-assembled GaN/Al(0.11)Ga(0.89)N quantum dots

GaN quantum dots were grown on an Al(0.11)Ga(0.89)N buffer layer by using flow rate modulation epitaxy. The Stranski-Krastanov growth mode was identified by an atomic force microscopy study. The thickness of the wetting layer is about 7.2 monolayers. The temperature dependent photoluminescence studies showed that at low temperature the localization energy, which accounts for de-trapping of excitons, decreases with the reducing dot size. The decrease in emission efficiency at high temperature is attributed to the activation of carriers from the GaN dot to the nitrogen vacancy (V(N)) state of the Al(0.11)Ga(0.89)N barrier layer. The activation energy decreases with reducing dot size.