First-principles calculation of oxygen adsorption on Zr(0001) surface: Possible site occupation between the second and the third layer

Ab initio atomistic thermodynamics study on the oxidation mechanism of binary and ternary alloy surfaces

Utilizing a combination of ab initio density-functional theory and thermodynamics formalism, we have established the microscopic mechanisms for oxidation of the binary and ternary alloy surfaces and provided a clear explanation for the experimental results of the oxidation. We construct three-dimensional surface phase diagrams (SPDs) for oxygen adsorption on three different Nb-X(110) (X = Ti, Al or Si) binary alloy surfaces. On the basis of the obtained SPDs, we conclude a general microscopic mechanism for the thermodynamic oxidation, that is, under O-rich conditions, a uniform single-phase SPD (type I) and a nonuniform double-phase SPD (type II) correspond to the sustained complete selective oxidation and the non-sustained partial selective oxidation by adding the X element, respectively. Furthermore, by revealing the framework of thermodynamics for the oxidation mechanism of ternary alloys through the comparison of the surface energies of two separated binary alloys, we provide an understanding for the selective oxidation behavior of the Nb ternary alloy surfaces. Using these general microscopic mechanisms, one could predict the oxidation behavior of any binary and multi-component alloy surfaces based on thermodynamics considerations.

Electronic properties and Schottky barriers at ZnO-metal interfaces from first principles

First principles calculations were performed to study the interface electronic structure and the Schottky barrier heights (SBHs) of ZnO-metal interfaces. Different kinds of metals were considered with different chemistries on the polar (0 0 0 1) and (0 0 0 1¯) ZnO surfaces. The projection of the density of states on the atomic orbitals of the interface atoms reveals that two kinds of interface electronic states appear: states due to the chemical bonding which appear at well defined energies and conventional metal-induced gap states associated with a smooth density of states in the bulk ZnO band gap region. The relative weight and distribution of the two classes of states depend on both the ZnO substrate termination and on the metal species. SBHs are found to be very sensitive to the specific interface chemical bonding. In particular, it is possible to note the occurrence of either Schottky barriers or Ohmic contacts. Our results have been compared with experiments and with available phenomenological theories, which estimate the SBH from few characteristic material parameters. Finally, the electronic and structural contributions to the SBH have been singled out and related to the different charge transfers occurring at the different interfaces.