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For: Lewis LJ, Nieminen RM. Defect-induced nucleation and growth of amorphous silicon. Phys Rev B Condens Matter 1996;54:1459-1462. [PMID: 9985972 DOI: 10.1103/physrevb.54.1459] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
Number Cited by Other Article(s)
1
Kangas J, Hogan CJ. Prediction of temperature-dependent nucleation and growth rates from crystallization-related heat release. Phys Rev E 2024;109:014617. [PMID: 38366471 DOI: 10.1103/physreve.109.014617] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/02/2023] [Accepted: 12/12/2023] [Indexed: 02/18/2024]
2
Lulli G, Albertazzi E, Balboni S, Colombo L. Defect-induced homogeneous amorphization of silicon: the role of defect structure and population. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2006;18:2077-2088. [PMID: 21697576 DOI: 10.1088/0953-8984/18/6/020] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2023]
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