Electroluminescence of erbium-doped silicon

Rapid quench annealing of Er implanted Si for quantum networking applications

Erbium-implanted silicon (Er:Si) holds promise for quantum networking, but the formation of multiple Er centers poses a challenge. We show that the cubic center (Er-C) has C2v or lower symmetry and propose all Er centers range between full Si- and full O-coordination. By co-implanting Si with Er and O (both 1019 cm-3) and increasing the thermal anneal quenching rate from ∼100 °C/s to ∼1000 °C/s, we shifted the dominant optically active center from Er2O3 clusters to the Er-C center with mixed Si and O coordination. Temperature-dependent photoluminescence reveals Er2O3 clusters and Er-C centers have O-related defect states at ∼200 and 90 meV above the 4I13/2 Er manifold, respectively.

Realization of 1.54-µm Light-Emitting Diodes Based on Er3+ /Yb3+ Co-Doped CsPbCl3 Films

Erbium ions (Er³⁺ , 1.54 µm) electric pumped light sources with excellent optical properties and a simple fabrication process are urgently desired to satisfy the development of silicon-based integration photonics. The previous Er-based electroluminescence devices are mainly based on Er-complexes or Er-doped oxide compounds, which usually suffer from low external quantum efficiency(EQE)or high applied voltage etc. In this work, a novel type of Er³⁺ /Yb³⁺ co-doped lead-halide perovskite films (Er³⁺ /Yb³⁺ :CsPbCl₃ ) with the maximum photoluminescence quantum yield of 30.12% are prepared by a simple two-step solution-coating method and the corresponding light emitting diodes (Er-PeLEDs) are fabricated, which demonstrate an almost pure 1.54-µm emission and a peak EQE up to 0.366% at a low applied voltage of 1.4 V. Strong negative thermal quenching effect may help Er-PeLEDs suppress Joule heating quenching. These excellent LED properties benefit mainly from the outstanding regulatory performance of acetate to perovskite films, the excellent semiconductor behavior and strong ionic property of the perovskite, and the involvement of Yb³⁺ ions, which can directly and efficiently transfer the exciton energy to Er³⁺ through a quantum cutting process. Overall, the realization of 1.54-µm Er-PeLEDs offers new opportunities for silicon-based integrated light sources.

Considerations for Neuromorphic Supercomputing in Semiconducting and Superconducting Optoelectronic Hardware

Any large-scale spiking neuromorphic system striving for complexity at the level of the human brain and beyond will need to be co-optimized for communication and computation. Such reasoning leads to the proposal for optoelectronic neuromorphic platforms that leverage the complementary properties of optics and electronics. Starting from the conjecture that future large-scale neuromorphic systems will utilize integrated photonics and fiber optics for communication in conjunction with analog electronics for computation, we consider two possible paths toward achieving this vision. The first is a semiconductor platform based on analog CMOS circuits and waveguide-integrated photodiodes. The second is a superconducting approach that utilizes Josephson junctions and waveguide-integrated superconducting single-photon detectors. We discuss available devices, assess scaling potential, and provide a list of key metrics and demonstrations for each platform. Both platforms hold potential, but their development will diverge in important respects. Semiconductor systems benefit from a robust fabrication ecosystem and can build on extensive progress made in purely electronic neuromorphic computing but will require III-V light source integration with electronics at an unprecedented scale, further advances in ultra-low capacitance photodiodes, and success from emerging memory technologies. Superconducting systems place near theoretically minimum burdens on light sources (a tremendous boon to one of the most speculative aspects of either platform) and provide new opportunities for integrated, high-endurance synaptic memory. However, superconducting optoelectronic systems will also contend with interfacing low-voltage electronic circuits to semiconductor light sources, the serial biasing of superconducting devices on an unprecedented scale, a less mature fabrication ecosystem, and cryogenic infrastructure.

Unusual intrinsic thermoluminescence in LiMgPO4:Er

Enhancement of stimulated luminescence in LiMgPO₄ due to energy transfer from Er³⁺ to the optical matrix.

Emission characteristics of self-assembled strained Ge1-xSnx islands for sources in the optical communication region

Self-assembled strained Ge_1-x Sn _x islands on Si (100) have been grown at a low temperature using molecular beam epitaxy. The in-built strain and fraction of Sn in the islands have been estimated using x-ray photoelectron spectroscopy and high resolution x-ray diffraction study of grown samples. No-phonon assisted transition in the optical communication wavelength range of 1.4-1.8 μm has been observed in the Ge_1-x Sn _x island samples. The direct band gap transition intensity is found to increase with a growth in Sn concentration, with this increase in intensity sustained up to a temperature of 130 K in Ge_1-x Sn _x islands. The observed electroluminescence in p-i-n devices fabricated on Ge_1-x Sn _x island samples above a threshold bias of 4 V makes them attractive for future Si based optical devices.

Super-enhancement of 1.54 μm emission from erbium codoped with oxygen in silicon-on-insulator

We report on the super enhancement of the 1.54 μm Er emission in erbium doped silicon-on-insulator when codoped with oxygen at a ratio of 1:1. This is attributed to a more favourable crystal field splitting in the substitutional tetrahedral site favoured for the singly coordinated case. The results on these carefully matched implant profiles show that optical response is highly determined by the amount and ratio of erbium and oxygen present in the sample and ratios of O:Er greater than unity are severely detrimental to the Er emission. The most efficient luminescence is forty times higher than in silicon-on-insulator implanted with Er only. This super enhancement now offers a realistic route not only for optical communication applications but also for the implementation of silicon photonic integrated circuits for sensing, biomedical instrumentation and quantum communication.

Room temperature direct band gap emission characteristics of surfactant mediated grown compressively strained Ge films

Compressively strained Ge films have been grown on relaxed Si_0.45Ge_0.55 virtual substrates using molecular beam epitaxy in the presence of Sb as a surfactant. Structural characterization has shown that films grown in the presence of surfactant exhibit very smooth surfaces with a relatively higher strain value in comparison to those grown without any surfactant. The variation of strain with increasing Ge layer thickness was analyzed using Raman spectroscopy. The strain is found to be reduced with increasing film thickness due to the onset of island nucleation following Stranski-Krastanov growth mechanism. No phonon assisted direct band gap photoluminescence from compressively strained Ge films grown on relaxed Si_0.45Ge_0.55 has been achieved up to room temperature. Excitation power and temperature dependent photoluminescence have been studied in details to investigate the origin of different emission sub-bands.

Novel Colloidal MoS2 Quantum Dot Heterojunctions on Silicon Platforms for Multifunctional Optoelectronic Devices

Silicon compatible wafer scale MoS₂ heterojunctions are reported for the first time using colloidal quantum dots. Size dependent direct band gap emission of MoS₂ dots are presented at room temperature. The temporal stability and decay dynamics of excited charge carriers in MoS₂ quantum dots have been studied using time correlated single photon counting spectroscopy technique. Fabricated n-MoS₂/p-Si 0D/3D heterojunctions exhibiting excellent rectification behavior have been studied for light emission in the forward bias and photodetection in the reverse bias. The electroluminescences with white light emission spectra in the range of 450–800 nm are found to be stable in the temperature range of 10–350 K. Size dependent spectral responsivity and detectivity of the heterojunction devices have been studied. The peak responsivity and detectivity of the fabricated heterojunction detector are estimated to be ~0.85 A/W and ~8 × 10¹¹ Jones, respectively at an applied bias of −2 V for MoS₂ QDs of 2 nm mean diameter. The above values are found to be superior to the reported results on large area photodetector devices fabricated using two dimensional materials.

Size-controlled Ge nanostructures for enhanced Er³⁺ light emission

The potential of Ge nanoparticles (NPs) embedded in Al2O3 with tunable effective optical bandgap values in the range of 1.0-3.3 eV to induce enhanced Er3+ light emission is investigated. We demonstrate nonresonant indirect excitation of the Er3+ ions mediated by the Ge NPs at room temperature. Efficient Er3+ light emission enhancement is obtained for Ge NPs with large effective optical bandgaps in the range of 1.85 to 2.8 eV. The coupled Ge NP-Er emission shows a negligible thermal quenching from 10 K to room temperature that is related to Er3+ de-excitation through thermally activated defect states.

Scandium effect on the luminescence of Er-Sc silicates prepared from multi-nanolayer films

Polycrystalline Er-Sc silicates (Er x Sc2-x Si2O7 and Er x Sc2-x SiO5) were fabricated using multilayer nanostructured films of Er2O3/SiO2/Sc2O3 deposited on SiO2/Si substrates by RF sputtering and thermal annealing at high temperature. The films were characterized by synchrotron radiation grazing incidence X-ray diffraction, cross-sectional transmission electron microscopy, energy-dispersive X-ray spectroscopy, and micro-photoluminescence measurements. The Er-Sc silicate phase Er x Sc2-x Si2O7 is the dominant film, and Er and Sc are homogeneously distributed after thermal treatment because of the excess of oxygen from SiO2 interlayers. The Er concentration of 6.7 × 10(21) atoms/cm(3) was achieved due to the presence of Sc that dilutes the Er concentration and generates concentration quenching. During silicate formation, the erbium diffusion coefficient in the silicate phase is estimated to be 1 × 10(-15) cm(2)/s at 1,250°C. The dominant Er x Sc2 - x Si2O7 layer shows a room-temperature photoluminescence peak at 1,537 nm with the full width at half maximum (FWHM) of 1.6 nm. The peak emission shift compared to that of the Y-Er silicate (where Y and Er have almost the same ionic radii) and the narrow FWHM are due to the small ionic radii of Sc(3+) which enhance the crystal field strength affecting the optical properties of Er(3+) ions located at the well-defined lattice sites of the Sc silicate. The Er-Sc silicate with narrow FWHM opens a promising way to prepare photonic crystal light-emitting devices.

Enhancement of light emission from silicon by precisely tuning coupled localized surface plasmon resonance of a nanostructured platinum layer prepared by atomic layer deposition

Plasmonic enhancement of photoluminescence from bulk silicon was achieved by spectrally tailoring coupled localized surface plasmon resonance (LSPR) in the Al2O3 cover/nanostructured platinum (nano-Pt)/Al2O3 spacer/silicon multilayer structures prepared by atomic layer deposition (ALD). Agreement between the simulation and experimental data indicates that the plasmonic activity originates from absorption enhancement due to coupled LSPR. Because of the optimized dielectric environment deposited by ALD around the nano-Pt layer, absorption of the multilayer structure was enhanced by the precise tuning of coupled LSPR to coincide with the excitation wavelength. This accurate plasmonic multilayer structure grown by ALD with high precision, tunability, uniformity, and reproducibility can be further applied in efficient light-emitting devices.

A Post-synthetic Modification of II-VI Nanoparticles to Create Tb3+ and Eu3+ Luminophores

We describe a novel method for creating luminescent lanthanide-containing nanoparticles in which the lanthanide cations are sensitized by the semiconductor nanoparticle's electronic excitation. In contrast to previous strategies, this new approach creates such materials by addition of external salt to a solution of fully formed nanoparticles. We demonstrate this post-synthetic modification for the lanthanide luminescence sensitization of two visible emitting lanthanides (Ln), Tb³⁺ and Eu³⁺ ions, through ZnS nanoparticles in which the cations were added post-synthetically as external Ln(NO₃)₃·xH₂O salt to solutions of ZnS nanoparticles. The post-synthetically treated ZnS nanoparticle systems display Tb³⁺ and Eu³⁺ luminescence intensities that are comparable to those of doped Zn(Ln)S nanoparticles, which we reported previously (J. Phys. Chem. A, 2011, 115, 4031-4041). A comparison with the synthetically doped systems is used to contrast the spatial distribution of the lanthanide ions, bulk versus surface localized. The post-synthetic strategy described in this work is fundamentally different from the synthetic incorporation (doping) approach and offers a rapid and less synthetically demanding protocol for Tb³⁺:ZnS and Eu³⁺:ZnS luminophores, thereby facilitating their use in a broad range of applications.

Optical and electrical properties of undoped and doped Ge nanocrystals

Size-dependent photoluminescence characteristics from Ge nanocrystals embedded in different oxide matrices have been studied to demonstrate the light emission in the visible wavelength from quantum-confined charge carriers. On the other hand, the energy transfer mechanism between Er ions and Ge nanocrystals has been exploited to exhibit the emission in the optical fiber communication wavelength range. A broad visible electroluminescence, attributed to electron hole recombination of injected carriers in Ge nanocrystals, has been achieved. Nonvolatile flash-memory devices using Ge nanocrystal floating gates with different tunneling oxides including SiO2, Al2O3, HfO2, and variable oxide thickness [VARIOT] tunnel barrier have been fabricated. An improved charge storage characteristic with enhanced retention time has been achieved for the devices using VARIOT oxide floating gate.

Electrochemically controlled auger quenching of Mn²+ photoluminescence in doped semiconductor nanocrystals

Auger processes in colloidal semiconductor nanocrystals have been scrutinized extensively in recent years. Whether involving electron-exciton, hole-exciton, or exciton-exciton interactions, such Auger processes are generally fast and hence have been considered prominent candidates for interpreting fast processes relevant to photoluminescence blinking and multiexciton decay. With recent advances in the chemistries of nanocrystal doping, increasing attention is now being paid to analogous photophysical properties of colloidal-doped semiconductor nanocrystals. Here, we report the first investigation of the effects of electron-dopant exchange interactions on dopant luminescence in doped semiconductor nanocrystals. Using electrochemical techniques, electrical control of charge-carrier densities in films of colloidal Mn(2+)-doped CdS quantum dots has been achieved and used to demonstrate remarkably effective Auger de-excitation of photoexcited Mn(2+). The doped nanocrystals are found to be substantially more sensitive to Auger de-excitation than their undoped analogues, a result shown to arise primarily from the long Mn(2+) excited-state lifetime. This observation of exceptionally effective Auger quenching has broader implications in areas of high-power, single-particle, or electrically driven luminescence of doped semiconductor nanocrystals, and also suggests interesting opportunities for modulating Mn(2+) photoluminescence intensities on sublifetime time scales, or for imaging charge carriers in nanocrystal-based devices.

Erbium in Semiconductors: Where are we coming from; Where are we going?

It is one of the curious twists of technology that transitions which are parity forbidden in the free ions of rare earths should have become of immense importance in solids used in fluorescent lighting, cathode ray tubes and optical amplifiers. It is not an unreasonable expectation that having achieved such success with excitation from photons and accelerated electrons that junction electroluminescence should also be important. Since Ennen demonstrated good low temperature electroluminescence in silicon in the early 80's, a formidable amount of work has been done to try to understand the excitation and quenching mechanisms in common semiconductor hosts such as silicon and gallium arsenide. Although some remarkable experimental results have been obtained for erbium in nanostructures, insulators and wide bandgap materials the performance in bulk silicon and silicon germanium is disappointing. More importantly we still have not achieved a comprehensive, detailed understanding of the processes of non-radiative competition to the rare earth emission. In this paper the key steps that have been made over the last twenty years towards our present day knowledge of erbium luminescence in semiconducting hosts are reviewed and an assessment made of what remains to be done.

Lanthanide sensitization in II-VI semiconductor materials: a case study with terbium(III) and europium(III) in zinc sulfide nanoparticles

This work explores the sensitization of luminescent lanthanide Tb(3+) and Eu(3+) cations by the electronic structure of zinc sulfide (ZnS) semiconductor nanoparticles. Excitation spectra collected while monitoring the lanthanide emission bands reveal that the ZnS nanoparticles act as an antenna for the sensitization of Tb(3+) and Eu(3+). The mechanism of lanthanide ion luminescence sensitization is rationalized in terms of an energy and charge transfer between trap sites and is based on a semiempirical model, proposed by Dorenbos and co-workers (Dorenbos, P. J. Phys.: Condens. Matter 2003, 15, 8417-8434; J. Lumin. 2004, 108, 301-305; J. Lumin. 2005, 111, 89-104. Dorenbos, P.; van der Kolk, E. Appl. Phys. Lett. 2006, 89, 061122-1-061122-3; Opt. Mater. 2008, 30, 1052-1057. Dorenbos, P. J. Alloys Compd. 2009, 488, 568-573; references 1-6.) to describe the energy level scheme. This model implies that the mechanisms of luminescence sensitization of Tb(3+) and Eu(3+) in ZnS nanoparticles are different; namely, Tb(3+) acts as a hole trap, whereas Eu(3+) acts as an electron trap. Further testing of this model is made by extending the studies from ZnS nanoparticles to other II-VI semiconductor materials; namely, CdSe, CdS, and ZnSe.

Self-organized growth of Si/Silica/Er2Si2O7 core-shell nanowire heterostructures and their luminescence

Self-organized Si-Er heterostructure nanowires showed promising 1.54 microm Er(3+) optical activity. Si nanowires of about 120-nm diameter were grown vertically on Si substrates by the vapor-liquid-solid mechanism in an Si-Er-Cl-H(2) system using an Au catalyst. Meanwhile, a single-crystalline Er(2)Si(2)O(7) shell sandwiched between nanometer-thin amorphous silica shells was self-organized on the surface of Si nanowires. The nanometer-thin heterostructure shells make it possible to observe a carrier-mediated 1.53 microm Er(3+) photoluminescence spectrum consisting of a series of very sharp peaks. The Er(3+) spectrum and intensity showed absolutely no change as the temperature was increased from 25 to 300 K. The luminescence lifetime at room temperature was found to be 70 micros. The self-organized Si nanowires show great potential as the material basis for developing an Si-based Er light source.

Nanostructure of Er3+ doped silicates

We demonstrate nanostructural evolution resulting in highly increased photoluminescence in silicates doped with Er3+ ions. High-resolution transmission electron microscopy (HRTEM) imaging, nano-energy dispersed X-ray (NEDX) spectroscopy, X-ray diffraction (XRD) and photoluminescence analysis confirm the local composition and structure changes of the Er3+ ions upon thermal annealing. We studied two types of amorphous nanopowder: the first is of the composition SiO2/18Al2O3/2Er2O3 (SAE), synthesized by combustion flame-chemical vapor condensation, and the second is with a composition of SiO2/8Y2O3/2Er2O3 (SYE), synthesized by sol-gel synthesis (composition in mol%). Electron diffraction and HRTEM imaging clearly show the formation of nanocrystallites with an average diameter of approximately 8 nm in SAE samples annealed at 1000 degrees C and SYE samples annealed at 1200 degrees C. The volume fraction of the nanocrystalline phase increased with each heat treatment, eventually leading to complete devitrification at 1400 degrees C. Further XRD and NEDX analysis indicates that the nanocrystalline phase has the pyrochlore structure with the formula Er(x)Al(2-x)Si2O7 or Er(x)Y(2-x)Si2O7 and a surrounding silica matrix.

Effect of the erbium dopant architecture on the femtosecond relaxation dynamics of silicon nanocrystals

Femtosecond pump-probe absorption spectroscopy is used to investigate the role of Er(3+) dopants in the early relaxation pathways of photoexcited Si nanocrystals. The fate of photoexcited electrons in three different Si nanostructures was studied and correlated with the effect of Er-doping and the nature of the dopant architecture. In Si nanocrystals without Er(3+) dopant, a trapping component was identified to be a major electron relaxation mechanism. Addition of Er(3+) ions into the core or surface shell of the nanocrystals was found to open up additional nonradiative relaxation pathways, which is attributed to Er-induced trap states in the Si host. Analysis of the photodynamics of the Si nanocrystal samples reveals an electron trapping mechanism involving trap-to-trap hopping in the doped nanocrystals, whereby the density of deep traps seem to increase with the presence of erbium. To gain additional insights on the relative depths of the trapping sites on the investigated nanostructures, benzoquinone was used as a surface adsorbed electron acceptor to facilitate photoinduced electron transfer across the nanocrystal surface and subsequently assist in back electron transfer. The established reduction potential (-0.45 V versus SCE) of the electron acceptor helped reveal that the erbium-doped nanocrystal samples have deeper trapping sites than the undoped Si. Furthermore, the measurements indicate that internally Er-doped Si have relatively deeper trapping sites than the erbium surface-enriched nanocrystals. The electron-shuttling experiment also reveals that the back electron transfer seems not to recover completely to the ground state in the doped Si nanocrystals, which is explained by a mechanism whereby the electrons are captured by deep trapping sites induced by erbium addition in the Si lattice.

Increasing the efficiency of erbium-based sources using silicon quantum dots

Silicon nanoclusters exhibit novel and interesting optical and electrical properties that are not observed in bulk silicon. Moreover, it has been discovered that there exists a strong coupling between nanoclusters and rare-earth ions that results in efficient energy exchange between the two species. This paper presents a review of recent work at University College London in this area, in which we have studied the optical properties of silicon nanoclusters in silica with rare-earth co-dopants and have developed a model for the excitation of erbium ions in erbium-doped silicon nanocrystals via coupling from optically generated excitons confined within the silicon nanoclusters. The model provides a phenomenological description of the exchange mechanism and allows us to evaluate an effective absorption cross-section for erbium that is up to four orders of magnitude higher than the corresponding value in stoichiometric silica. This paper also discusses the origin of the 1.6 eV emission band associated with the silicon nanoclusters and determines absorption cross-sections and excitonic lifetimes for nanoclusters in silica.

Microscopic structure of Er-related optically active centers in crystalline silicon

A successful observation and analysis of the Zeeman effect on the lambda approximately 1.54 microm photoluminescence band in Er-doped crystalline MBE-grown silicon are presented. The symmetry of the dominant optically active centers is conclusively established as orthorhombic I(C(2v)) with g axially approximately 18.39 and g radially approximately 0. In this way the long standing puzzle as regards the paramagnetism of optically active Er-related centers in silicon is settled. Preferential generation of a single type of an optically active Er-related center confirmed in this study is essential for photonic applications of Si:Er.

Optically induced deexcitation of rare-Earth ions in a semiconductor matrix

We report on verification of the proposed energy transfer mechanism responsible for photoluminescence of rare earth (RE) ions in semiconductors. Using two-color spectroscopy in the visible and the midinfrared regions (with a free-electron laser) we demonstrate reversal of the most important step in the excitation process. In that way, formation of the intermediate state bridging atomic states of the RE ion core and extended orbitals of a semiconducting host is explicitly confirmed and its characteristic energy spectroscopically determined. The study is performed for InP:Yb. It is argued, however, that the conclusions are valid for all semiconductor:RE systems, including the notorious Si:Er.