Distribution-function analysis of mesoscopic hopping conductance fluctuations

Evidence of Lifshitz Transition in the Thermoelectric Power of Ultrahigh-Mobility Bilayer Graphene

Resolving low-energy features in the density of states (DOS) holds the key to understanding a wide variety of rich novel phenomena in graphene-based 2D heterostructures. The Lifshitz transition in bilayer graphene (BLG) arising from trigonal warping has been established theoretically and experimentally. Nevertheless, the experimental realization of its effects on transport properties has been challenging because of its relatively low energy scale (∼1 meV). In this work, we demonstrate that the thermoelectric power (TEP) can be used as an effective probe to investigate fine changes in the DOS of BLG. We observed additional entropy features in the vicinity of the charge neutrality point (CNP) in gapped BLG. This apparent violation of the Mott formula can be explained quantitatively by considering the effects of trigonal warping, thereby serving as possible evidence of a Lifshitz transition.

Marginally Self-Averaging One-Dimensional Localization in Bilayer Graphene

The combination of a field-tunable band gap, topological edge states, and valleys in the band structure makes insulating bilayer graphene a unique localized system, where the scaling laws of dimensionless conductance g remain largely unexplored. Here we show that the relative fluctuations in lng with the varying chemical potential, in strongly insulating bilayer graphene (BLG), decay nearly logarithmically for a channel length up to L/ξ≈20, where ξ is the localization length. This "marginal" self-averaging, and the corresponding dependence of ⟨lng⟩ on L, suggests that transport in strongly gapped BLG occurs along strictly one-dimensional channels, where ξ≈0.5±0.1  μm was found to be much longer than that expected from the bulk band gap. Our experiment reveals a nontrivial localization mechanism in gapped BLG, governed by transport along robust edge modes.

Limits to metallic conduction in atomic-scale quasi-one-dimensional silicon wires

The recent observation of ultralow resistivity in highly doped, atomic-scale silicon wires has sparked interest in what limits conduction in these quasi-1D systems. Here we present electron transport measurements of gated Si:P wires of widths 4.6 and 1.5 nm. At 4.6 nm we find an electron mobility, μ(el)≃60  cm²/V s, in excellent agreement with that of macroscopic Hall bars. Metallic conduction persists to millikelvin temperatures where we observe Gaussian conductance fluctuations of order δG∼e²/h. In thinner wires (1.5 nm), metallic conduction breaks down at G≲e²/h, where localization of carriers leads to Coulomb blockade. Metallic behavior is explained by the large carrier densities in Si:P δ-doped systems, allowing the occupation of all six valleys of the silicon conduction band, enhancing the number of 1D channels and hence the localization length.

Magnetization-switched metal-insulator transition in a (Ga,Mn)as tunnel device

We observe the occurrence of an Efros-Shklovskii gap in (Ga,Mn)As based tunnel junctions. The occurrence of the gap is controlled by the extent of the hole wave function on the Mn acceptor atoms. Using k.p-type calculations we show that this extent depends crucially on the direction of the magnetization in the (Ga,Mn)As (which has two almost equivalent easy axes). This implies one can reversibly tune the system into the insulating or metallic state by changing the magnetization.

Coulomb blockade and transport in a chain of one-dimensional quantum dots

A long one-dimensional wire with a finite density of strong random impurities is modeled as a chain of weakly coupled quantum dots. At low temperature T and applied voltage V its resistance is limited by breaks: randomly occurring clusters of quantum dots with a special length distribution pattern that inhibit the transport. Because of the interplay of interaction and disorder effects the resistance can exhibit T and V dependences that can be approximated by power laws. The corresponding two exponents differ greatly from each other and depend not only on the intrinsic electronic parameters but also on the impurity distribution statistics.

Non-ohmic variable-range hopping transport in one-dimensional conductors

We investigate theoretically the effect of a finite electric field on the resistivity of a disordered one-dimensional system in the variable-range hopping regime. We find that at low fields the transport is inhibited by rare fluctuations in the random distribution of localized states that create high-resistance breaks in the hopping network. As the field increases, the breaks become less resistive. In strong fields the breaks are overrun and the electron distribution function is driven far from equilibrium. The logarithm of the resistance initially shows a simple exponential drop with the field, followed by a logarithmic dependence, and finally, by an inverse square-root law.