Discrete atomistic model to simulate etching of a crystalline solid

Dimensional crossover in Kardar-Parisi-Zhang growth

Two-dimensional (2D) Kardar-Parisi-Zhang (KPZ) growth is usually investigated on substrates of lateral sizes L_{x}=L_{y}, so that L_{x} and the correlation length (ξ) are the only relevant lengths determining the scaling behavior. However, in cylindrical geometry, as well as in flat rectangular substrates L_{x}≠L_{y} and, thus, the surfaces can become correlated in a single direction, when ξ∼L_{x}≪L_{y}. From extensive simulations of several KPZ models, we demonstrate that this yields a dimensional crossover in their dynamics, with the roughness scaling as W∼t^{β_{2D}} for t≪t_{c} and W∼t^{β_{1D}} for t≫t_{c}, where t_{c}∼L_{x}^{1/z_{2D}}. The height distributions (HDs) also cross over from the 2D flat (cylindrical) HD to the asymptotic Tracy-Widom Gaussian orthogonal ensemble (Gaussian unitary ensemble) distribution. Moreover, 2D to one-dimensional (1D) crossovers are found also in the asymptotic growth velocity and in the steady-state regime of flat systems, where a family of universal HDs exists, interpolating between the 2D and 1D ones as L_{y}/L_{x} increases. Importantly, the crossover scalings are fully determined and indicate a possible way to solve 2D KPZ models.

Prediction of glassy silica etching with hydrogen fluoride gas by kinetic Monte Carlo simulations

Understanding the surface properties of glass during the hydrogen fluoride (HF)-based vapor etching process is essential to optimize treatment processes in semiconductor and glass industries. In this work, we investigate an etching process of fused glassy silica by HF gas with kinetic Monte Carlo (KMC) simulations. Detailed pathways of surface reactions between gas molecules and the silica surface with activation energy sets are explicitly implemented in the KMC algorithm for both dry and humid conditions. The KMC model successfully describes the etching of the silica surface with the evolution of surface morphology up to the micron regime. The simulation results show that the calculated etch rate and surface roughness are in good agreement with the experimental results, and the effect of humidity on the etch rate is also confirmed. Development of roughness is theoretically analyzed in terms of surface roughening phenomena, and it is predicted that the values of growth and roughening exponents are 0.19 and 0.33, respectively, suggesting that our model belongs to the Kardar-Parisi-Zhang universality class. Furthermore, the temporal evolution of surface chemistry, specifically surface hydroxyls and fluorine groups, is monitored. The surface density of fluorine moieties is 2.5 times higher than that of the hydroxyl groups, implying that the surface is well fluorinated during vapor etching.

Accessibility of the surface fractal dimension during film growth

Fractal properties on self-affine surfaces of films growing under nonequilibrium conditions are important in understanding the corresponding universality class. However, measurement of the surface fractal dimension has been intensively investigated and is still very problematic. In this work, we report the behavior of the effective fractal dimension in the context of film growth involving lattice models believed to belong to the Kardar-Parisi-Zhang (KPZ) universality class. Our results, which are presented for growth in a d-dimensional substrate (d=1,2) and use the three-point sinuosity (TPS) method, show universal scaling of the measure M, which is defined in terms of discretization of the Laplacian operator applied to the height of the film surface, M=t^{δ}g[Θ], where t is the time, g[Θ] is a scale function, δ=2β, Θ≡τt^{-1/z}, β, and z are the KPZ growth and dynamical exponents, respectively, and τ is a spatial scale length used to compute M. Importantly, we show that the effective fractal dimensions are consistent with the expected KPZ dimensions for d=1,2, if Θ≲0.3, which include a thin film regime for the extraction of the fractal dimension. This establishes the scale limits in which the TPS method can be used to accurately extract effective fractal dimensions that are consistent with those expected for the corresponding universality class. As a consequence, for the steady state, which is inaccessible to experimentalists studying film growth, the TPS method provided effective fractal dimension consistent with the KPZ ones for almost all possible τ, i.e., 1≲τ<L/2, where L is the lateral size of the substrate on which the deposit is grown. In the growth of thin films, the true fractal dimension can be observed in a narrow range of τ, the upper limit of which is of the same order of magnitude as the correlation length of the surface, indicating the limits of self-affinity of a surface in an experimentally accessible regime. This upper limit was comparatively lower for the Higuchi method or the height-difference correlation function. Scaling corrections for the measure M and the height-difference correlation function are studied analytically and compared for the Edwards-Wilkinson class at d=1, yielding similar accuracy for both methods. Importantly, we extend our discussion to a model representing diffusion-dominated growth of films and find that the TPS method achieves the corresponding fractal dimension only at steady state and in a narrow range of the scale length, compared to that found for the KPZ class.

Height distributions in interface growth: The role of the averaging process

Height distributions (HDs) are key quantities to uncover universality and geometry-dependence in evolving interfaces. To quantitatively characterize HDs, one uses adimensional ratios of their first central moments (m_{n}) or cumulants (κ_{n}), especially the skewness S and kurtosis K, whose accurate estimate demands an averaging over all L^{d} points of the height profile at a given time, in translation-invariant interfaces, and over N independent samples. One way of doing this is by calculating m_{n}(t) [or κ_{n}(t)] for each sample and then carrying out an average of them for the N interfaces, with S and K being calculated only at the end. Another approach consists in directly calculating the ratios for each interface and, then, averaging the N values. It turns out, however, that S and K for the growth regime HDs display strong finite-size and -time effects when estimated from these "interface statistics," as already observed in some previous works and clearly shown here, through extensive simulations of several discrete growth models belonging to the EW and KPZ classes on one- and two-dimensional substrates of sizes L=const. and L∼t. Importantly, I demonstrate that with "1-point statistics," i.e., by calculating m_{n}(t) [or κ_{n}(t)] once for all NL^{d} heights together, these corrections become very weak, so that S and K attain values very close to the asymptotic ones already at short times and for small L's. However, I find that this "1-point" (1-pt) approach fails in uncovering the universality of the HDs in the steady-state regime (SSR) of systems whose average height, h[over ¯], is a fluctuating variable. In fact, as demonstrated here, in this regime the 1-pt height evolves as h(t)=h[over ¯](t)+s_{λ}A^{1/2}L^{α}ζ+⋯-where P(ζ) is the underlying SSR HD-and the fluctuations in h[over ¯] yield S_{1-pt}∼t^{-1/2} and K_{1-pt}∼t^{-1}. Nonetheless, by analyzing P(h-h[over ¯]), the cumulants of P(ζ) can be accurately determined. I also show that different, but universal, asymptotic values for S and K (related, so, to different HDs) can be found from the "interface statistics" in the SSR. This reveals the importance of employing the various complementary approaches to reliably determine the universality class of a given system through its different HDs.

From cellular automata to growth dynamics: The Kardar-Parisi-Zhang universality class

We demonstrate that in the continuous limit the etching mechanism yields the Kardar-Parisi-Zhang (KPZ) equation in a (d+1)-dimensional space. We show that the parameters ν, associated with the surface tension, and λ, associated with the nonlinear term of the KPZ equation, are not phenomenological, but rather they stem from a new probability distribution function. The Galilean invariance is recovered independently of d, and we illustrate this via very precise numerical simulations. We obtain firsthand the coupling parameter as a function of the probabilities. In addition, we strengthen the argument that there is no upper critical limit for the KPZ equation.

Circular Kardar-Parisi-Zhang interfaces evolving out of the plane

Circular KPZ interfaces spreading radially in the plane have Gaussian unitary ensemble (GUE) Tracy-Widom (TW) height distribution (HD) and Airy_{2} spatial covariance, but what are their statistics if they evolve on the surface of a different background space, such as a bowl, a mountain, or any surface of revolution? To give an answer to this, we report here extensive numerical analyses of several one-dimensional KPZ models on substrates whose size enlarges as 〈L(t)〉=L_{0}+ωt^{γ}, while their mean height 〈h〉 increases as usual [〈h〉∼t]. We show that the competition between the L enlargement and the correlation length (ξ≃ct^{1/z}) plays a key role in the asymptotic statistics of the interfaces. While systems with γ>1/z have HDs given by GUE and the interface width increasing as w∼t^{β}, for γ<1/z the HDs are Gaussian, in a correlated regime where w∼t^{αγ}. For the special case γ=1/z, a continuous class of distributions exists, which interpolate between Gaussian (for small ω/c) and GUE (for ω/c≫1). Interestingly, the HD seems to agree with the Gaussian symplectic ensemble (GSE) TW distribution for ω/c≈10. Despite the GUE HDs for γ>1/z, the spatial covariances present a strong dependence on the parameters ω and γ, agreeing with Airy_{2} only for ω≫1, for a given γ, or when γ=1, for a fixed ω. These results considerably generalize our knowledge on 1D KPZ systems, unveiling the importance of the background space on their statistics.

Kardar-Parisi-Zhang growth on one-dimensional decreasing substrates

Recent experimental works on one-dimensional (1D) circular Kardar-Parisi-Zhang (KPZ) systems whose radii decrease in time have reported controversial conclusions about the statistics of their interfaces. Motivated by this, here we investigate several one-dimensional KPZ models on substrates whose size changes in time as L(t)=L_{0}+ωt, focusing on the case ω<0. From extensive numerical simulations, we show that for L_{0}≫1 there exists a transient regime in which the statistics is consistent with that of flat KPZ systems (the ω=0 case), for both ω<0 and ω>0. Actually, for a given model, L_{0} and |ω|, we observe that a difference between ingrowing (ω<0) and outgrowing (ω>0) systems arises only at long times (t∼t_{c}=L_{0}/|ω|), when the expanding surfaces cross over to the statistics of curved KPZ systems, whereas the shrinking ones become completely correlated. A generalization of the Family-Vicsek scaling for the roughness of ingrowing interfaces is presented. Our results demonstrate that a transient flat statistics is a general feature of systems starting with large initial sizes, regardless of their curvature. This is consistent with their recent observation in ingrowing turbulent liquid crystal interfaces, but it is in contrast with the apparent observation of curved statistics in colloidal deposition at the edge of evaporating drops. A possible explanation for this last result, as a consequence of the very small number of monolayers analyzed in this experiment, is given. This is illustrated in a competitive growth model presenting a few-monolayer transient and an asymptotic behavior consistent, respectively, with the curved and flat statistics.

Radial restricted solid-on-solid and etching interface-growth models

An approach to generate radial interfaces is presented. A radial network recursively obtained is used to implement discrete model rules designed originally for the investigation in flat substrates. I used the restricted solid-on-solid and etching models as to test the proposed scheme. The results indicate the Kardar, Parisi, and Zhang conjecture is completely verified leading to a good agreement between the interface radius fluctuation distribution and the Gaussian unitary ensemble. The evolution of the radius agrees well with the generalized conjecture, and the two-point correlation function exhibits also a good agreement with the covariance of the Airy_{2} process. The approach can be used to investigate radial interfaces evolution for many other classes of universality.

Optimal detrended fluctuation analysis as a tool for the determination of the roughness exponent of the mounded surfaces

We present an optimal detrended fluctuation analysis (DFA) and apply it to evaluate the local roughness exponent in nonequilibrium surface growth models with mounded morphology. Our method consists in analyzing the height fluctuations computing the shortest distance of each point of the profile to a detrending curve that fits the surface within the investigated interval. We compare the optimal DFA (ODFA) with both the standard DFA and nondetrended analysis. We validate the ODFA method considering a one-dimensional model in the Kardar-Parisi-Zhang universality class starting from a mounded initial condition. We applied the methods to the Clarke-Vvedensky (CV) model in 2+1 dimensions with thermally activated surface diffusion and absence of step barriers. It is expected that this model belongs to the nonlinear molecular beam epitaxy (nMBE) universality class. However, an explicit observation of the roughness exponent in agreement with the nMBE class was still missing. The effective roughness exponent obtained with ODFA agrees with the value expected for the nMBE class, whereas using the other methods it does not agree. We also characterize the transient anomalous scaling of the CV model and obtained that the corresponding exponent is in agreement with the value reported for other nMBE models with weaker corrections to the scaling.

Analysis of etching at a solid-solid interface

We present a method to derive an analytical expression for the roughness of an eroded surface whose dynamics are ruled by cellular automaton. Starting from the automaton, we obtain the time evolution of the height average and height variance (roughness). We apply this method to the etching model in 1+1 dimensions, and then we obtain the roughness exponent. Using this in conjunction with the Galilean invariance we obtain the other exponents, which perfectly match the numerical results obtained from simulations. These exponents are exact, and they are the same as those exhibited by the Kardar-Parisi-Zhang (KPZ) model for this dimension. Therefore, our results provide proof for the conjecture that the etching and KPZ models belong to the same universality class. Moreover, the method is general, and it can be applied to other cellular automata models.

Width and extremal height distributions of fluctuating interfaces with window boundary conditions

We present a detailed study of squared local roughness (SLRDs) and local extremal height distributions (LEHDs), calculated in windows of lateral size l, for interfaces in several universality classes, in substrate dimensions d_{s}=1 and 2. We show that their cumulants follow a Family-Vicsek-type scaling, and, at early times, when ξ≪l (ξ is the correlation length), the rescaled SLRDs are given by log-normal distributions, with their nth cumulant scaling as (ξ/l)^{(n-1)d_{s}}. This gives rise to an interesting temporal scaling for such cumulants as 〈w_{n}〉_{c}∼t^{γ_{n}}, with γ_{n}=2nβ+(n-1)d_{s}/z=[2n+(n-1)d_{s}/α]β. This scaling is analytically proved for the Edwards-Wilkinson (EW) and random deposition interfaces and numerically confirmed for other classes. In general, it is featured by small corrections, and, thus, it yields exponents γ_{n} (and, consequently, α,β and z) in good agreement with their respective universality class. Thus, it is a useful framework for numerical and experimental investigations, where it is usually hard to estimate the dynamic z and mainly the (global) roughness α exponents. The stationary (for ξ≫l) SLRDs and LEHDs of the Kardar-Parisi-Zhang (KPZ) class are also investigated, and, for some models, strong finite-size corrections are found. However, we demonstrate that good evidence of their universality can be obtained through successive extrapolations of their cumulant ratios for long times and large l. We also show that SLRDs and LEHDs are the same for flat and curved KPZ interfaces.

Smoothening in thin-film deposition on rough substrates

The evolution of the surface roughness W of a thin film deposited on a rough substrate is studied with a model of temperature-activated adatom diffusion, irreversible lateral aggregation, and no step energy barrier, in which the main parameter is the ratio R of diffusion and deposition rates. At sufficiently low temperatures (R≲10), the average number of adatom steps after adsorption is very small, thus W monotonically increases with time t due to an approximately uncorrelated deposition at short times. If the temperature is not very low (R∼10(3) or larger), smoothening occurs at short times and the Villain-Lai-Das Sarma (VLDS) growth equation governs the long time roughening, which is attained after a crossover time t(c) that increases with the correlation length ξ(i) of the substrate. Scaling arguments predict the dependence of t(c) on temperature and on the substrate production time and the scaling relation for the difference between the roughness of films deposited on rough and flat substrates, in good agreement with numerical results. The effect of temperature is not a direct extension of previous results on flat substrates because the short wavelength fluctuations delay the formation of terraces. For this reason, the effective energy obtained from the dependence of t(c) on R is 40% of the energy of activated adatom diffusion. A scaling law for the initial smoothening is proposed as W/W(i)=Ψ(t/t(c1)), with a crossover time t(c1)≡R(-θ)ξ(i)(z), where W(i) is the substrate roughness, θ≈0.4, and z is the VLDS dynamical exponent. It provides good data collapse if W is not very small and is suggested to be tested experimentally.

Relaxation after a change in the interface growth dynamics

The global effects of sudden changes in the interface growth dynamics are studied using models of the Edwards-Wilkinson (EW) and Kardar-Parisi-Zhang (KPZ) classes during their growth regimes in dimensions d=1 and d=2. Scaling arguments and simulation results are combined to predict the relaxation of the difference in the roughness of the perturbed and the unperturbed interfaces, ΔW^{2}∼s{c}t{-γ}, where s is the time of the change and t>s is the observation time after that event. The previous analytical solution for the EW-EW changes is reviewed and numerically discussed in the context of lattice models, with possible decays with γ=3/2 and γ=1/2. Assuming the dominant contribution to ΔW{2} to be predicted from a time shift in the final growth dynamics, the scaling of KPZ-KPZ changes with γ=1-2β and c=2β is predicted, where β is the growth exponent. Good agreement with simulation results in d=1 and d=2 is observed. A relation with the relaxation of a local autoresponse function in d=1 cannot be discarded, but very different exponents are shown in d=2. We also consider changes between different dynamics, with the KPZ-EW as a special case in which a faster growth, with dynamical exponent z_{i}, changes to a slower one, with exponent z. A scaling approach predicts a crossover time t_{c}∼s{z/z_{i}}≫s and ΔW{2}∼s{c}F(t/t_{c}), with the decay exponent γ=1/2 of the EW class. This rules out the simplified time shift hypothesis in d=2 dimensions. These results help to understand the remarkable differences in EW smoothing of correlated and uncorrelated surfaces, and the approach may be extended to sudden changes between other growth dynamics.

Kardar-Parisi-Zhang universality class in (2+1) dimensions: universal geometry-dependent distributions and finite-time corrections

The dynamical regimes of models belonging to the Kardar-Parisi-Zhang (KPZ) universality class are investigated in d=2+1 by extensive simulations considering flat and curved geometries. Geometry-dependent universal distributions, different from their Tracy-Widom counterpart in one dimension, were found. Distributions exhibit finite-time corrections hallmarked by a shift in the mean decaying as t(-β), where β is the growth exponent. Our results support a generalization of the ansatz h=v(∞)t+(Γt)(β)χ+η+ζt(-β) to higher dimensions, where v(∞), Γ, ζ, and η are nonuniversal quantities whereas β and χ are universal and the last one depends on the surface geometry. Generalized Gumbel distributions provide very good fits of the distributions in at least four orders of magnitude around the peak, which can be used for comparisons with experiments. Our numerical results call for analytical approaches and experimental realizations of the KPZ class in two-dimensional systems.

Analytical results for long-time behavior in anomalous diffusion

We investigate through a generalized Langevin formalism the phenomenon of anomalous diffusion for asymptotic times, and we generalized the concept of the diffusion exponent. A method is proposed to obtain the diffusion coefficient analytically through the introduction of a time scaling factor λ. We obtain as well an exact expression for λ for all kinds of diffusion. Moreover, we show that λ is a universal parameter determined by the diffusion exponent. The results are then compared with numerical calculations and very good agreement is observed. The method is general and may be applied to many types of stochastic problem.

Thin-film growth by random deposition of linear polymers on a square lattice

We present some results of Monte Carlo simulations for the deposition of particles of different sizes on a two-dimensional substrate. The particles are linear, height one, and can be deposited randomly only in the two x and y directions of the substrate and occupy an integer number of cells of the lattice. We show there are three different regimes for the temporal evolution of the interface width. At the initial times we observe an uncorrelated growth, with an exponent β1 characteristic of the random deposition model. At intermediate times, the interface width presents an unusual behavior, described by a growing exponent β2, which depends on the size of the particles added to the substrate. If the linear size of the particle is two we have β2 < β1, otherwise we have β2 > β1, for all other particle sizes. After the growth reaches the saturation regime where the interface width becomes constant and is described by the roughness exponent α, which is nearly independent of the size of the particle. Similar results are found in the surface growth due to the electrophoretic deposition of polymer chains. Contrary to one-dimensional results the growth exponents are nonuniversal.

Random deposition of particles of different sizes

We study the surface growth generated by the random deposition of particles of different sizes. A model is proposed where the particles are aggregated on an initially flat surface, giving rise to a rough interface and a porous bulk. By using Monte Carlo simulations, a surface has grown by adding particles of different sizes, as well as identical particles on the substrate in (1+1) dimensions. In the case of deposition of particles of different sizes, they are selected from a Poisson distribution, where the particle sizes may vary by 1 order of magnitude. For the deposition of identical particles, only particles which are larger than one lattice parameter of the substrate are considered. We calculate the usual scaling exponents: the roughness, growth, and dynamic exponents alpha, beta, and z, respectively, as well as, the porosity in the bulk, determining the porosity as a function of the particle size. The results of our simulations show that the roughness evolves in time following three different behaviors. The roughness in the initial times behaves as in the random deposition model. At intermediate times, the surface roughness grows slowly and finally, at long times, it enters into the saturation regime. The bulk formed by depositing large particles reveals a porosity that increases very fast at the initial times and also reaches a saturation value. Excepting the case where particles have the size of one lattice spacing, we always find that the surface roughness and porosity reach limiting values at long times. Surprisingly, we find that the scaling exponents are the same as those predicted by the Villain-Lai-Das Sarma equation.

Maximal- and minimal-height distributions of fluctuating interfaces

Maximal- and minimal-height distributions (MAHD, MIHD) of two-dimensional interfaces grown with the nonlinear equations of Kardar-Parisi-Zhang (KPZ, second order) and of Villain-Lai-Das Sarma (VLDS, fourth order) are shown to be different. Two universal curves may be MAHD or MIHD of each class depending on the sign of the relevant nonlinear term, which is confirmed by results of several lattice models in the KPZ and VLDS classes. The difference between MAHD and MIDH is connected with the asymmetry of the local height distribution. A simple, exactly solvable deposition-erosion model is introduced to illustrate this feature. The average extremal heights scale with the same exponent of the average roughness. In contrast to other correlated systems, generalized Gumbel distributions do not fit those MAHD and MIHD, nor those of Edwards-Wilkinson growth.

Stochastic model in the Kardar-Parisi-Zhang universality class with minimal finite size effects

We introduce a solid-on-solid lattice model for growth with conditional evaporation. A measure of finite size effects is obtained by observing the time invariance of distribution of local height fluctuations. The model parameters are chosen so that the change in the distribution in time is minimum. On a one-dimensional substrate the results obtained from the model for the roughness exponent from three different methods are same as predicted for the Kardar-Parisi-Zhang equation. One of the unique features of the model is that as obtained from the structure factor S(k,t) for the one-dimensional substrate growth exactly matches the predicted value of 0.5 within statistical errors. The model can be defined in any dimensions. We have obtained results for this model on two- and three-dimensional substrates.

Numerical study of roughness distributions in nonlinear models of interface growth

We analyze the shapes of roughness distributions of discrete models in the Kardar, Parisi, and Zhang (KPZ) and in the Villain, Lai, and Das Sarma (VLDS) classes of interface growth, in one and two dimensions. Three KPZ models in d=2 confirm the expected scaling of the distribution and show a stretched exponential tail approximately as exp(-x0.8), with a significant asymmetry near the maximum. Conserved restricted solid-on-solid models belonging to the VLDS class were simulated in d=1 and d=2. The tail in d=1 has the form exp(-x2) and, in d=2, has a simple exponential decay, but is quantitatively different from the distribution of the linear fourth-order (Mullins-Herring) theory. It is not possible to fit any of the above distributions to those of 1/f(alpha) noise interfaces, in contrast with recently studied models with depinning transitions.

Universality in two-dimensional Kardar-Parisi-Zhang growth

We analyze simulation results of a model proposed for etching of a crystalline solid and results of other discrete models in the (2+1)-dimensional Kardar-Parisi-Zhang (KPZ) class. In the steady states, the moments W(n) of orders n=2,3,4 of the height distribution are estimated. Results for the etching model, the ballistic deposition model, and the temperature-dependent body-centered restricted solid-on-solid model suggest the universality of the absolute value of the skewness S identical with W(3)/W(3/2)(2) and of the value of the kurtosis Q identical with W(4)/W(2)(2)-3. The sign of the skewness is the same as of the parameter lambda of the KPZ equation which represents the process in the continuum limit. The best numerical estimates, obtained from the etching model, are absolute value of S=0.26+/-0.01 and Q=0.134+/-0.015. For this model, the roughness exponent alpha=0.383+/-0.008 is obtained, accounting for a constant correction term (intrinsic width) in the scaling of the squared interface width. This value is slightly below previous estimates of extensive simulations and rules out the proposal of the exact value alpha=2/5. The conclusion is supported by results for the ballistic deposition model. Independent estimates of the dynamical exponent and of the growth exponent are 1.605< or =z< or =1.64 and beta=0.229+/-0.005, respectively, which are consistent with the relations alpha+z=2 and z=alpha/beta.

Dynamic transition in etching with poisoning

We study a lattice model for etching of a crystalline solid including the deposition of a poisoning species. The model considers normal and lateral erosion of the columns of the solid by a flux of etching particles and the blocking effects of impurities formed at the surface. As the probability p of formation of this poisoning species increases, the etching rate decreases and a continuous transition to a pinned phase is observed. The transition is in the directed percolation (DP) class, with the fraction of the exposed columns as the order parameter. This interpretation is consistent with a mapping of the interface problem in d+1 dimensions onto a d-dimensional contact process, and is confirmed by numerical results in d=1 and d=2. In the etching phase, the interface width scales with Kardar-Parisi-Zhang (KPZ) exponents, and shows a crossover from the critical DP behavior (W approximately t) to KPZ near the critical point, at etching times of the order of (pc-p)(-nu(||)). Anomalous roughening is observed at criticality, with the roughness exponent related to DP exponents as alphac=nu(||)/nu(perpendicular)>1. The main differences from previously studied DP transitions in growth models and isotropic percolation transitions in etching models are discussed. Investigations in real systems are suggested.