Epitaxial growth with pulsed deposition: submonolayer scaling and Villain instability

Finite-size effects in addition and chipping processes

We investigate analytically and numerically a system of clusters evolving via collisions with clusters of minimal mass (monomers). Each collision either leads to the addition of the monomer to the cluster or the chipping of a monomer from the cluster, and emerging behaviors depend on which of the two processes is more probable. If addition prevails, monomers disappear in a time that scales as lnN with the total mass N≫1, and the system reaches a jammed state. When chipping prevails, the system remains in a quasistationary state for a time that scales exponentially with N, but eventually, a giant fluctuation leads to the disappearance of monomers. In the marginal case, monomers disappear in a time that scales linearly with N, and the final supercluster state is a peculiar jammed state; i.e., it is not extensive.

Dynamic Scaling and Island Growth Kinetics in Pulsed Laser Deposition of SrTiO_{3}

We use real-time diffuse surface x-ray diffraction to probe the evolution of island size distributions and its effects on surface smoothing in pulsed laser deposition (PLD) of SrTiO_{3}. We show that the island size evolution obeys dynamic scaling and two distinct regimes of island growth kinetics. Our data show that PLD film growth can persist without roughening despite thermally driven Ostwald ripening, the main mechanism for surface smoothing, being shut down. The absence of roughening is concomitant with decreasing island density, contradicting the prevailing view that increasing island density is the key to surface smoothing in PLD. We also report a previously unobserved crossover from diffusion-limited to attachment-limited island growth that reveals the influence of nonequilibrium atomic level surface transport processes on the growth modes in PLD. We show by direct measurements that attachment-limited island growth is the dominant process in PLD that creates step flowlike behavior or quasistep flow as PLD "self-organizes" local step flow on a length scale consistent with the substrate temperature and PLD parameters.

Scaling in film growth by pulsed laser deposition and modulated beam deposition

The scalings in film growth by pulsed laser deposition (PLD) and modulated beam deposition (MBD) were investigated by Monte Carlo simulations. In PLD, an atomic pulse beam with a period t(0) were deposited instantaneously on a substrate, whereas in MBD, adatoms were deposited during a short time interval t(1) (0≤t(1)≤t(0)) within each period. If t(1)=0, MBD will be identical to PLD and, if t(1)=t(0), MBD will become usual molecular beam epitaxy (MBE). Specifically, logarithmic scaling was investigated for the nucleation density reported for PLD, and the scaling of island density was studied regarding the growth for 0<t(1)<t(0) in MBD. It was found that the logarithmic scaling held for the nucleation density when growing islands were fractal-like but the quality of data collapsing became worse when islands were compact by adatom diffusion along the edges of islands. A crossover behavior from PLD growth to MBE growth was observed as t(1) increased. The phase diagram was also presented.

Reducing the surface roughness beyond the pulsed-laser-deposition limit

Here, we outline the theoretical fundamentals of a promising growth kinetics of films from the vapor phase, in which pulsed fluxes are combined with temperature transients to enable short-range surface relaxations (e.g., species rearrangements) and to inhibit long-range relaxations (atomic exchange between species). A group of physical techniques (fully pulsed thermal and/or laser depositions) based on this kinetics is developed that can be used to prepare films with roughnesses even lower than those obtained with pulsed-laser deposition, which is the physical vapor-phase deposition technique that has produced the flattest films reported so far.

High island densities in pulsed laser deposition: causes and implications

By studying metal growth on Pt(111), we determine the reasons for the high island densities observed in pulsed laser deposition (PLD) compared to conventional thermal deposition. For homoepitaxy by PLD with moderate energies ( < or approximately 100 eV) of the deposited ions, high island densities are caused by the high instantaneous flux of arriving particles. Additional nuclei are formed at high ion energies (> or approximately 200 eV) by adatoms created by the impinging ions. For heteroepitaxy, the island density is also increased by intermixing (deposited material implanted in the surface), creating an inhomogeneous potential energy surface for diffusing atoms. We discuss implications for layer-by-layer growth and sputter deposition.

Rate equations and scaling in pulsed laser deposition

We study a simplified model for pulsed laser deposition [Hinnemann, Phys. Rev. Lett. 87, 135701 (2001)] by rate equations. We consider a set of equations where islands are assumed to be pointlike, as well as an improved one that takes the size of the islands into account. The first set of equations is solved exactly but its predictive power is restricted to a few pulses. The improved set of equations is integrated numerically, is in excellent agreement with simulations, and fully accounts for the crossover from continuous to pulsed deposition. Moreover, we analyze the scaling of the nucleation density and show numerical results indicating that a previously observed logarithmic scaling does not apply.

Preventing kinetic roughening in physical vapor-phase-deposited films

The growth kinetics of the mostly used physical vapor-phase deposition techniques -molecular beam epitaxy, sputtering, flash evaporation, and pulsed laser deposition-is investigated by rate equations with the aim of testing their suitability for the preparation of ultraflat ultrathin films. The techniques are studied in regard to the roughness and morphology during early stages of growth. We demonstrate that pulsed laser deposition is the best technique for preparing the flattest films due to two key features [use of (i) a supersaturated pulsed flux of (ii) hyperthermal species] that promote a kinetically limited Ostwald ripening mechanism.

Nonequilibrium interlayer transport in pulsed laser deposition

We use time-resolved surface x-ray diffraction measurements with microsecond range resolution to study the growth kinetics of pulsed laser deposited . Time-dependent surface coverages corresponding to single laser shots were determined directly from crystal truncation rod intensity transients. Analysis of surface coverage evolution shows that extremely fast nonequilibrium interlayer transport, which occurs concurrently with the arrival of the laser plume, dominates the deposition process. A much smaller fraction of material, which is governed by the dwell time between successive laser shots, is transferred by slow, thermally driven interlayer transport processes.