Width and extremal height distributions of fluctuating interfaces with window boundary conditions

Height distributions in interface growth: The role of the averaging process

Height distributions (HDs) are key quantities to uncover universality and geometry-dependence in evolving interfaces. To quantitatively characterize HDs, one uses adimensional ratios of their first central moments (m_{n}) or cumulants (κ_{n}), especially the skewness S and kurtosis K, whose accurate estimate demands an averaging over all L^{d} points of the height profile at a given time, in translation-invariant interfaces, and over N independent samples. One way of doing this is by calculating m_{n}(t) [or κ_{n}(t)] for each sample and then carrying out an average of them for the N interfaces, with S and K being calculated only at the end. Another approach consists in directly calculating the ratios for each interface and, then, averaging the N values. It turns out, however, that S and K for the growth regime HDs display strong finite-size and -time effects when estimated from these "interface statistics," as already observed in some previous works and clearly shown here, through extensive simulations of several discrete growth models belonging to the EW and KPZ classes on one- and two-dimensional substrates of sizes L=const. and L∼t. Importantly, I demonstrate that with "1-point statistics," i.e., by calculating m_{n}(t) [or κ_{n}(t)] once for all NL^{d} heights together, these corrections become very weak, so that S and K attain values very close to the asymptotic ones already at short times and for small L's. However, I find that this "1-point" (1-pt) approach fails in uncovering the universality of the HDs in the steady-state regime (SSR) of systems whose average height, h[over ¯], is a fluctuating variable. In fact, as demonstrated here, in this regime the 1-pt height evolves as h(t)=h[over ¯](t)+s_{λ}A^{1/2}L^{α}ζ+⋯-where P(ζ) is the underlying SSR HD-and the fluctuations in h[over ¯] yield S_{1-pt}∼t^{-1/2} and K_{1-pt}∼t^{-1}. Nonetheless, by analyzing P(h-h[over ¯]), the cumulants of P(ζ) can be accurately determined. I also show that different, but universal, asymptotic values for S and K (related, so, to different HDs) can be found from the "interface statistics" in the SSR. This reveals the importance of employing the various complementary approaches to reliably determine the universality class of a given system through its different HDs.

From cellular automata to growth dynamics: The Kardar-Parisi-Zhang universality class

We demonstrate that in the continuous limit the etching mechanism yields the Kardar-Parisi-Zhang (KPZ) equation in a (d+1)-dimensional space. We show that the parameters ν, associated with the surface tension, and λ, associated with the nonlinear term of the KPZ equation, are not phenomenological, but rather they stem from a new probability distribution function. The Galilean invariance is recovered independently of d, and we illustrate this via very precise numerical simulations. We obtain firsthand the coupling parameter as a function of the probabilities. In addition, we strengthen the argument that there is no upper critical limit for the KPZ equation.

Crossover from compact to branched films in electrodeposition with surface diffusion

We study a model for thin film electrodeposition in which instability development by preferential adsorption and reduction of cations at surface peaks competes with surface relaxation by diffusion of the adsorbates. The model considers cations moving in a supported electrolyte, adsorption and reduction when they reach the film surface, and consequent production of mobile particles that execute activated surface diffusion, which is represented by a sequence of random hops to neighboring lattice sites with a maximum of G hop attempts (G≫1), a detachment probability ε<1 per neighboring particle, and a no-desorption condition. Computer simulations show the formation of a compact wetting layer followed by the growth of branched deposits. The maximal thickness z_{c} of that layer increases with G but is weakly affected by ε. A scaling approach describes the crossover from smooth film growth to unstable growth and predicts z_{c}∼G^{γ}, with γ=1/[2(1-ν)]≈0.43, where ν≈0.30 is the inverse of the dynamical exponent of the Villain-Lai-Das Sarma equation that describes the initial roughening. Using previous results for related deposition models, the thickness z_{c} can be predicted as a function of an activation energy for terrace surface diffusion and the temperature, and the small effects of the parameter ε are justified. These predictions are confirmed by the numerical results with good accuracy. We discuss possible applications, with a particular focus on the growth of multifuncional structures with stacking layers of different porosity.

Initial pseudo-steady state & asymptotic KPZ universality in semiconductor on polymer deposition

The Kardar-Parisi-Zhang (KPZ) class is a paradigmatic example of universality in nonequilibrium phenomena, but clear experimental evidences of asymptotic 2D-KPZ statistics are still very rare, and far less understanding stems from its short-time behavior. We tackle such issues by analyzing surface fluctuations of CdTe films deposited on polymeric substrates, based on a huge spatio-temporal surface sampling acquired through atomic force microscopy. A pseudo-steady state (where average surface roughness and spatial correlations stay constant in time) is observed at initial times, persisting up to deposition of ~10⁴ monolayers. This state results from a fine balance between roughening and smoothening, as supported by a phenomenological growth model. KPZ statistics arises at long times, thoroughly verified by universal exponents, spatial covariance and several distributions. Recent theoretical generalizations of the Family-Vicsek scaling and the emergence of log-normal distributions during interface growth are experimentally confirmed. These results confirm that high vacuum vapor deposition of CdTe constitutes a genuine 2D-KPZ system, and expand our knowledge about possible substrate-induced short-time behaviors.

Local average height distribution of fluctuating interfaces

Height fluctuations of growing surfaces can be characterized by the probability distribution of height in a spatial point at a finite time. Recently there has been spectacular progress in the studies of this quantity for the Kardar-Parisi-Zhang (KPZ) equation in 1+1 dimensions. Here we notice that, at or above a critical dimension, the finite-time one-point height distribution is ill defined in a broad class of linear surface growth models unless the model is regularized at small scales. The regularization via a system-dependent small-scale cutoff leads to a partial loss of universality. As a possible alternative, we introduce a local average height. For the linear models, the probability density of this quantity is well defined in any dimension. The weak-noise theory for these models yields the "optimal path" of the interface conditioned on a nonequilibrium fluctuation of the local average height. As an illustration, we consider the conserved Edwards-Wilkinson (EW) equation, where, without regularization, the finite-time one-point height distribution is ill defined in all physical dimensions. We also determine the optimal path of the interface in a closely related problem of the finite-time height-difference distribution for the nonconserved EW equation in 1+1 dimension. Finally, we discuss a UV catastrophe in the finite-time one-point distribution of height in the (nonregularized) KPZ equation in 2+1 dimensions.