Local roughness exponent in the nonlinear molecular-beam-epitaxy universality class in one dimension

Accessibility of the surface fractal dimension during film growth

Fractal properties on self-affine surfaces of films growing under nonequilibrium conditions are important in understanding the corresponding universality class. However, measurement of the surface fractal dimension has been intensively investigated and is still very problematic. In this work, we report the behavior of the effective fractal dimension in the context of film growth involving lattice models believed to belong to the Kardar-Parisi-Zhang (KPZ) universality class. Our results, which are presented for growth in a d-dimensional substrate (d=1,2) and use the three-point sinuosity (TPS) method, show universal scaling of the measure M, which is defined in terms of discretization of the Laplacian operator applied to the height of the film surface, M=t^{δ}g[Θ], where t is the time, g[Θ] is a scale function, δ=2β, Θ≡τt^{-1/z}, β, and z are the KPZ growth and dynamical exponents, respectively, and τ is a spatial scale length used to compute M. Importantly, we show that the effective fractal dimensions are consistent with the expected KPZ dimensions for d=1,2, if Θ≲0.3, which include a thin film regime for the extraction of the fractal dimension. This establishes the scale limits in which the TPS method can be used to accurately extract effective fractal dimensions that are consistent with those expected for the corresponding universality class. As a consequence, for the steady state, which is inaccessible to experimentalists studying film growth, the TPS method provided effective fractal dimension consistent with the KPZ ones for almost all possible τ, i.e., 1≲τ<L/2, where L is the lateral size of the substrate on which the deposit is grown. In the growth of thin films, the true fractal dimension can be observed in a narrow range of τ, the upper limit of which is of the same order of magnitude as the correlation length of the surface, indicating the limits of self-affinity of a surface in an experimentally accessible regime. This upper limit was comparatively lower for the Higuchi method or the height-difference correlation function. Scaling corrections for the measure M and the height-difference correlation function are studied analytically and compared for the Edwards-Wilkinson class at d=1, yielding similar accuracy for both methods. Importantly, we extend our discussion to a model representing diffusion-dominated growth of films and find that the TPS method achieves the corresponding fractal dimension only at steady state and in a narrow range of the scale length, compared to that found for the KPZ class.

Scaling of roughness and porosity in thin film deposition with mixed transport mechanisms and adsorption barriers

Thin film deposition with particle transport mixing collimated and diffusive components and with barriers for adsorption are studied using numerical simulations and scaling approaches. Biased random walks on lattices are used to model the particle flux and the analogy with advective-diffusive transport is used to define a Peclet number P that represents the effect of the bias towards the substrate. An aggregation probability that relates the rates of adsorption and of the dominant transport mechanism plays the role of a Damkohler number D, where D≲1 is set to describe moderate to low adsorption rates. Very porous deposits with sparse branches are obtained with P≪1, whereas low porosity deposits with large height fluctuations at short scales are obtained with P≫1. For P≳1 in which the field bias is intense, an initial random deposition is followed by Kardar-Parisi-Zhang (KPZ) roughening. As the transport is displaced from those limiting conditions, the interplay of the transport and adsorption mechanisms establishes a condition to produce films with the smoothest surfaces for a constant deposited mass: with low adsorption barriers, a balance of random and collimated flux is required, whereas for high barriers the smoothest surfaces are obtained with P∼D^{1/2}. For intense bias, the roughness is shown to be a power law of P/D, whose exponent depends on the growth exponent β of the KPZ class, and the porosity has a superuniversal scaling as (P/D)^{-1/3}. We also study a generalized ballistic deposition model with slippery particle aggregation that shows the universality of these relations in growth with dominant collimated flux, particle adsorption at any point of the deposit, and negligible adsorbate diffusion, in contrast with the models where aggregation is restricted to the outer surface.

Modeling of nonequilibrium surface growth by a limited-mobility model with distributed diffusion length

Kinetic Monte Carlo (KMC) simulations are a well-established numerical tool to investigate the time-dependent surface morphology in molecular beam epitaxy experiments. In parallel, simplified approaches such as limited mobility (LM) models characterized by a fixed diffusion length have been studied. Here we investigate an extended LM model to gain deeper insight into the role of diffusional processes concerning the growth morphology. Our model is based on the stochastic transition rules of the Das Sarma-Tamborena model but differs from the latter via a variable diffusion length. A first guess for this length can be extracted from the saturation value of the mean-squared displacement calculated from short KMC simulations. Comparing the resulting surface morphologies in the sub- and multilayer growth regime to those obtained from KMC simulations, we find deviations which can be cured by adding fluctuations to the diffusion length. This mimics the stochastic nature of particle diffusion on a substrate, an aspect which is usually neglected in LM models. We propose to add fluctuations to the diffusion length by choosing this quantity for each adsorbed particle from a Gaussian distribution, where the variance of the distribution serves as a fitting parameter. We show that the diffusional fluctuations have a huge impact on cluster properties during submonolayer growth as well as on the surface profile in the high coverage regime. The analysis of the surface morphologies on one- and two-dimensional substrates during sub- and multilayer growth shows that the LM model can produce structures that are indistinguishable to the ones from KMC simulations at arbitrary growth conditions.

Effects of a kinetic barrier on limited-mobility interface growth models

The role played by a kinetic barrier originated by out-of-plane step edge diffusion, introduced by Leal et al. [J. Phys.: Condens. Matter 23, 292201 (2011)JCOMEL0953-898410.1088/0953-8984/23/29/292201], is investigated in the Wolf-Villain and Das Sarma-Tamborenea models with short-range diffusion. Using large-scale simulations, we observe that this barrier is sufficient to produce growth instability, forming quasiregular mounds in one and two dimensions. The characteristic surface length saturates quickly indicating a uncorrelated growth of the three-dimensional structures, which is also confirmed by a growth exponent β=1/2. The out-of-plane particle current shows a large reduction of the downward flux in the presence of the kinetic barrier enhancing, consequently, the net upward diffusion and the formation of three-dimensional self-assembled structures.