Laroche D, Gervais G, Lilly MP, Reno JL. Positive and negative Coulomb drag in vertically integrated one-dimensional quantum wires.
NATURE NANOTECHNOLOGY 2011;
6:793-797. [PMID:
22036809 DOI:
10.1038/nnano.2011.182]
[Citation(s) in RCA: 5] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/03/2011] [Accepted: 09/23/2011] [Indexed: 05/31/2023]
Abstract
Electron interactions in and between wires become increasingly complex and important as circuits are scaled to nanometre sizes, or use reduced-dimensional conductors such as carbon nanotubes, nanowires and gated high-mobility two-dimensional electron systems. This is because the screening of the long-range Coulomb potential of individual carriers is weakened in these systems, which can lead to phenomena such as Coulomb drag, where a current in one wire induces a voltage in a second wire through Coulomb interactions alone. Previous experiments have demonstrated Coulomb electron drag in wires separated by a soft electrostatic barrier of width ≳80 nm (ref. 12), which was interpreted as resulting entirely from momentum transfer. Here, we measure both positive and negative drag between adjacent vertical quantum wires that are separated by ∼15 nm and have independent contacts, which allows their electron densities to be tuned independently. We map out the drag signal versus the number of electron sub-bands occupied in each wire, and interpret the results both in terms of momentum-transfer and charge-fluctuation induced transport models. For wires of significantly different sub-band occupancies, the positive drag effect can be as large as 25%.
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