Nonthermal photocoercivity effect in a low-doped (Ga,Mn)As ferromagnetic semiconductor

Valley Manipulation by Optically Tuning the Magnetic Proximity Effect in WSe2/CrI3 Heterostructures

Monolayer valley semiconductors, such as tungsten diselenide (WSe₂), possess valley pseudospin degrees of freedom that are optically addressable but degenerate in energy. Lifting the energy degeneracy by breaking time-reversal symmetry is vital for valley manipulation. This has been realized by directly applying magnetic fields or via pseudomagnetic fields generated by intense circularly polarized optical pulses. However, sweeping large magnetic fields is impractical for devices, and the pseudomagnetic fields are only effective in the presence of ultrafast laser pulses. The recent rise of two-dimensional (2D) magnets unlocks new approaches to controlling valley physics via van der Waals heterostructure engineering. Here, we demonstrate the wide continuous tuning of the valley polarization and valley Zeeman splitting with small changes in the laser-excitation power in heterostructures formed by monolayer WSe₂ and 2D magnetic chromium triiodide (CrI₃). The valley manipulation is realized via the optical control of the CrI₃ magnetization, which tunes the magnetic exchange field over a range of 20 T. Our results reveal a convenient new path toward the optical control of valley pseudospins and van der Waals magnetic heterostructures.

Optically switched magnetism in photovoltaic perovskite CH3NH3(Mn:Pb)I3

The demand for ever-increasing density of information storage and speed of manipulation boosts an intense search for new magnetic materials and novel ways of controlling the magnetic bit. Here, we report the synthesis of a ferromagnetic photovoltaic CH₃NH₃(Mn:Pb)I₃ material in which the photo-excited electrons rapidly melt the local magnetic order through the Ruderman–Kittel–Kasuya–Yosida interactions without heating up the spin system. Our finding offers an alternative, very simple and efficient way of optical spin control, and opens an avenue for applications in low-power, light controlling magnetic devices.

Functional behaviour can emerge in materials in which magnetic order is determined by the interplay of localised and itinerant magnetic interactions. Here the authors tune such magnetic order in a photovoltaic perovskite by tuning the electronic carrier concentration under visible light illumination.

Optical spin-transfer-torque-driven domain-wall motion in a ferromagnetic semiconductor

We demonstrate optical manipulation of the position of a domain wall in a dilute magnetic semiconductor, GaMnAsP. Two main contributions are identified. First, photocarrier spin exerts a spin-transfer torque on the magnetization via the exchange interaction. The direction of the domain-wall motion can be controlled using the helicity of the laser. Second, the domain wall is attracted to the hot spot generated by the focused laser. Unlike magnetic-field-driven domain-wall depinning, these mechanisms directly drive domain-wall motion, providing an optical tweezerlike ability to position and locally probe domain walls.

Photoinduced Barkhausen effect in the ferromagnetic semiconductor (Ga,Mn)As

Magnetization of ferromagnetic materials commonly occurs via random jumps of domain walls between pinning sites, a phenomenon known as the Barkhausen effect. Using strongly focused light pulses of appropriate power and duration we demonstrate the ability to selectively activate single jumps in the domain wall propagation in (Ga,Mn)As, manifesting itself as a discrete photoinduced domain wall creep as a function of illumination time. The propagation velocity can be increased over 7 orders of magnitude varying the illumination power density and the magnetic field.