Scaling in plateau-to-plateau transition: a direct connection of quantum hall systems with the Anderson localization model

Universality of quantum phase transitions in the integer and fractional quantum Hall regimes

Fractional quantum Hall (FQH) phases emerge due to strong electronic interactions and are characterized by anyonic quasiparticles, each distinguished by unique topological parameters, fractional charge, and statistics. In contrast, the integer quantum Hall (IQH) effects can be understood from the band topology of non-interacting electrons. We report a surprising super-universality of the critical behavior across all FQH and IQH transitions. Contrary to the anticipated state-dependent critical exponents, our findings reveal the same critical scaling exponent κ = 0.41 ± 0.02 and localization length exponent γ = 2.4 ± 0.2 for fractional and integer quantum Hall transitions. From these, we extract the value of the dynamical exponent z ≈ 1. We have achieved this in ultra-high mobility trilayer graphene devices with a metallic screening layer close to the conduction channels. The observation of these global critical exponents across various quantum Hall phase transitions was masked in previous studies by significant sample-to-sample variation in the measured values of κ in conventional semiconductor heterostructures, where long-range correlated disorder dominates. We show that the robust scaling exponents are valid in the limit of short-range disorder correlations.

Conformity Experiment on Inelastic Scattering Exponent of Electrons in Two Dimensions

The quantum Hall (QH) effect is one of the most widely studied physical phenomenon in two dimensions. The plateau-plateau transition within this effect can be comprehensively described by the scaling theory, which encompasses three pivotal exponents: the critical exponent κ, the inelastic scattering exponent p, and the universal exponent γ. Prior studies have focused on measuring κ and estimating γ, assuming a constant p value of 2 across magnetic fields. Here, our work marks a significant advancement by measuring all three exponents within a single graphene device and a conventional two-dimensional electron system. This study uniquely determines p at low magnetic fields (weak localization region and well outside the QH regime) and high magnetic fields (in the vicinity of the QH regime). Employing a comprehensive analytical approach that includes weak localization, plateau-plateau transitions, and variable range hopping, we have directly determined κ, p, and γ. Our findings reveal a distinct variation in p, shifting from 1 in the low magnetic field regime to 2 in the QH regime in graphene.

Engineering Plateau Phase Transition in Quantum Anomalous Hall Multilayers

The plateau phase transition in quantum anomalous Hall (QAH) insulators corresponds to a quantum state wherein a single magnetic domain gives way to multiple domains and then reconverges back to a single magnetic domain. The layer structure of the sample provides an external knob for adjusting the Chern number C of the QAH insulators. Here, we employ molecular beam epitaxy to grow magnetic topological insulator multilayers and realize the magnetic field-driven plateau phase transition between two QAH states with odd Chern number change ΔC. We find that critical exponents extracted for the plateau phase transitions with ΔC = 1 and ΔC = 3 in QAH insulators are nearly identical. We construct a four-layer Chalker-Coddington network model to understand the consistent critical exponents for the plateau phase transitions with ΔC = 1 and ΔC = 3. This work will motivate further investigations into the critical behaviors of plateau phase transitions with different ΔC in QAH insulators.

Delocalization and Universality of the Fractional Quantum Hall Plateau-to-Plateau Transitions

Disorder and electron-electron interaction play essential roles in the physics of electron systems in condensed matter. In two-dimensional, quantum Hall systems, extensive studies of disorder-induced localization have led to the emergence of a scaling picture with a single extended state, characterized by a power-law divergence of the localization length in the zero-temperature limit. Experimentally, scaling has been investigated via measuring the temperature dependence of plateau-to-plateau transitions between the integer quantum Hall states (IQHSs), yielding a critical exponent κ≃0.42. Here we report scaling measurements in the fractional quantum Hall state (FQHS) regime where interaction plays a dominant role. Our Letter is partly motivated by recent calculations, based on the composite fermion theory, that suggest identical critical exponents in both IQHS and FQHS cases to the extent that the interaction between composite fermions is negligible. The samples used in our experiments are two-dimensional electron systems confined to GaAs quantum wells of exceptionally high quality. We find that κ varies for transitions between different FQHSs observed on the flanks of Landau level filling factor ν=1/2 and has a value close to that reported for the IQHS transitions only for a limited number of transitions between high-order FQHSs with intermediate strength. We discuss possible origins of the nonuniversal κ observed in our experiments.

Probing the mesoscopic size limit of quantum anomalous Hall insulators

The inelastic scattering length (L_s) is a length scale of fundamental importance in condensed matters due to the relationship between inelastic scattering and quantum dephasing. In quantum anomalous Hall (QAH) materials, the mesoscopic length scale L_s plays an instrumental role in determining transport properties. Here we examine L_s in three regimes of the QAH system with distinct transport behaviors: the QAH, quantum critical, and insulating regimes. Although the resistance changes by five orders of magnitude when tuning between these distinct electronic phases, scaling analyses indicate a universal L_s among all regimes. Finally, mesoscopic scaled devices with sizes on the order of L_s were fabricated, enabling the direct detection of the value of L_s in QAH samples. Our results unveil the fundamental length scale that governs the transport behavior of QAH materials.

In quantum anomalous Hall (QAH) materials, the mesoscopic scattering length (L_s) plays an instrumental role in determining transport properties. Here, the authors examine L_s in three regimes (QAH, quantum critical, and insulating) with distinct transport behaviours, and find a universal L_s across all regimes.

Multifractal Conductance Fluctuations in High-Mobility Graphene in the Integer Quantum Hall Regime

We present the first experimental evidence for the multifractality of a transport property at a topological phase transition. In particular, we show that conductance fluctuations display multifractality at the integer quantum Hall plateau-to-plateau transitions in high-mobility mesoscopic graphene devices. The multifractality gets rapidly suppressed as the chemical potential moves away from these critical points. Our combination of experimental study and multifractal analysis provides a novel method for probing the criticality of wave functions at phase transitions in mesoscopic systems, and quantum criticality in several condensed-matter systems.

Scaling Collapse of Longitudinal Conductance near the Integer Quantum Hall Transition

Within the mature field of Anderson transitions, the critical properties of the integer quantum Hall transition still pose a significant challenge. Numerical studies of the transition suffer from strong corrections to scaling for most observables. In this Letter, we suggest to overcome this problem by using the longitudinal conductance g of the network model as the scaling observable, which we compute for system sizes nearly 2 orders of magnitude larger than in previous studies. We show numerically that the sizable corrections to scaling of g can be accounted for in a remarkably simple form, which leads to an excellent scaling collapse. Surprisingly, the scaling function turns out to be indistinguishable from a Gaussian. We propose a cost-function-based approach and estimate ν=2.609(7) for the localization length exponent, consistent with previous results, but considerably more precise than in most works on this problem. Extending previous approaches for Hamiltonian models, we also confirm our finding using integrated conductance as a scaling variable.

Zero Magnetic Field Plateau Phase Transition in Higher Chern Number Quantum Anomalous Hall Insulators

The plateau-to-plateau transition in quantum Hall effect under high magnetic fields is a celebrated quantum phase transition between two topological states. It can be achieved by either sweeping the magnetic field or tuning the carrier density. The recent realization of the quantum anomalous Hall (QAH) insulators with tunable Chern numbers introduces the channel degree of freedom to the dissipation-free chiral edge transport and makes the study of the quantum phase transition between two topological states under zero magnetic field possible. Here, we synthesized the magnetic topological insulator (TI)/TI pentalayer heterostructures with different Cr doping concentrations in the middle magnetic TI layers using molecular beam epitaxy. By performing transport measurements, we found a potential plateau phase transition between C=1 and C=2 QAH states under zero magnetic field. In tuning the transition, the Hall resistance monotonically decreases from h/e^{2} to h/2e^{2}, concurrently, the longitudinal resistance exhibits a maximum at the critical point. Our results show that the ratio between the Hall resistance and the longitudinal resistance is greater than 1 at the critical point, which indicates that the original chiral edge channel from the C=1 QAH state coexists with the dissipative bulk conduction channels. Subsequently, these bulk conduction channels appear to self-organize and form the second chiral edge channel in completing the plateau phase transition. Our study will motivate further investigations of this novel Chern number change-induced quantum phase transition and advance the development of the QAH chiral edge current-based electronic and spintronic devices.

Anderson Localization in the Fractional Quantum Hall Effect

The interplay between interaction and disorder-induced localization is of fundamental interest. This article addresses localization physics in the fractional quantum Hall state, where both interaction and disorder have nonperturbative consequences. We provide compelling theoretical evidence that the localization of a single quasiparticle of the fractional quantum Hall state at filling factor ν=n/(2n+1) has a striking quantitative correspondence to the localization of a single electron in the (n+1)th Landau level. By analogy to the dramatic experimental manifestations of Anderson localization in integer quantum Hall effect, this leads to predictions in the fractional quantum Hall regime regarding the existence of extended states at a critical energy, and the nature of the divergence of the localization length as this energy is approached. Within a mean field approximation, these results can be extended to situations where a finite density of quasiparticles is present.

Critical Behavior and Universal Signature of an Axion Insulator State

Recently, the search for an axion insulator state in the ferromagnetic-3D topological insulator (TI) heterostructure and MnBi_{2}Te_{4} has attracted intense interest. However, its detection remains difficult in experiments. We systematically investigate the disorder-induced phase transition of the axion insulator state in a 3D TI with antiparallel magnetization alignment surfaces. It is found that there exists a 2D disorder-induced phase transition on the surfaces of the 3D TI which shares the same universality class with the quantum Hall plateau to plateau transition. Then, we provide a phenomenological theory which maps the random mass Dirac Hamiltonian of the axion insulator state into the Chalker-Coddington network model. Therefore, we propose probing the axion insulator state by investigating the universal signature of such a phase transition in the ferromagnetic-3D TI heterostructure and MnBi_{2}Te_{4}. Our findings not only show a global phase diagram of the axion insulator state, but also stimulate further experiments to probe it.

Scaling behavior of the quantum phase transition from a quantum-anomalous-Hall insulator to an axion insulator

The phase transitions from one plateau to the next plateau or to an insulator in quantum Hall and quantum anomalous Hall (QAH) systems have revealed universal scaling behaviors. A magnetic-field-driven quantum phase transition from a QAH insulator to an axion insulator was recently demonstrated in magnetic topological insulator sandwich samples. Here, we show that the temperature dependence of the derivative of the longitudinal resistance on magnetic field at the transition point follows a characteristic power-law that indicates a universal scaling behavior for the QAH to axion insulator phase transition. Similar to the quantum Hall plateau to plateau transition, the QAH to axion insulator transition can also be understood by the Chalker-Coddington network model. We extract a critical exponent κ ~ 0.38 ± 0.02 in agreement with recent high-precision numerical results on the correlation length exponent of the Chalker-Coddington model at ν ~ 2.6, rather than the generally-accepted value of 2.33.

Quantum Hall Network Models as Floquet Topological Insulators

Network models for equilibrium integer quantum Hall (IQH) transitions are described by unitary scattering matrices that can also be viewed as representing nonequilibrium Floquet systems. The resulting Floquet bands have zero Chern number, and are instead characterized by a chiral Floquet winding number. This begs the question, How can a model without Chern number describe IQH systems? We resolve this puzzle by showing that nonzero Chern number is recovered from the network model via the energy dependence of network model scattering parameters. This relationship shows that, despite their topologically distinct origins, IQH and chiral Floquet topology-changing transitions share identical universal scaling properties.

Dimensional Crossover of the Integer Quantum Hall Plateau Transition and Disordered Topological Pumping

We study the quantum Hall plateau transition on rectangular tori. As the aspect ratio of the torus is increased, the two-dimensional critical behavior, characterized by a subthermodynamic number of topological states in a vanishing energy window around a critical energy, changes drastically. In the thin-torus limit, the entire spectrum is Anderson localized; however, an extensive number of states retain a Chern number C≠0. We resolve this apparent paradox by mapping the thin-torus quantum Hall system onto a disordered Thouless pump, where the Chern number corresponds to the winding number of an electron's path in real space during a pump cycle. We then characterize quantitatively the crossover between the one- and two-dimensional regimes for finite torus thickness, where the average Thouless conductance also shows anomalous scaling.

Quantum-Hall to Insulator Transition in Ultra-Low-Carrier-Density Topological Insulator Films and a Hidden Phase of the Zeroth Landau Level

A key feature of the topological surface state under a magnetic field is the presence of the zeroth Landau level at the zero energy. Nonetheless, it is challenging to probe the zeroth Landau level due to large electron-hole puddles smearing its energy landscape. Here, by developing ultra-low-carrier density topological insulator Sb₂ Te₃ films, an extreme quantum limit of the topological surface state is reached and a hidden phase at the zeroth Landau level is uncovered. First, an unexpected quantum-Hall-to-insulator-transition near the zeroth Landau level is discovered. Then, through a detailed scaling analysis, it is found that this quantum-Hall-to-insulator-transition belongs to a new universality class, implying that the insulating phase discovered here has a fundamentally different origin from those in nontopological systems.

Anderson localization of flexural waves in disordered elastic beams

We study, both experimentally and numerically, the Anderson localization phenomenon in flexural waves of a disordered elastic beam, which consists of a beam with randomly spaced notches. We found that the effect of the disorder on the system is stronger above a crossover frequency f_c than below it. For a chosen value of disorder, we show that above f_c the normal-mode wave functions are localized as occurs in disordered solids, while below f_c the wave functions are partially and fully extended, but their dependence on the frequency is not governed by a monotonous relationship, as occurs in other classical and quantum systems. These findings were corroborated with the calculation of the participation ratio, the localization length and a level statistics. In particular, the nearest spacing distribution is obtained and analyzed with a suitable phenomenological expression, related to the level repulsion.

Effects of Random Domains on the Zero Hall Plateau in the Quantum Anomalous Hall Effect

Recently, a zero Hall conductance plateau with random domains was experimentally observed in the quantum anomalous Hall (QAH) effect. We study the effects of random domains on the zero Hall plateau in QAH insulators. We find that the structure inversion symmetry determines the scaling property of the zero Hall plateau transition in the QAH systems. In the presence of structure inversion symmetry, the zero Hall plateau state shows a quantum-Hall-type critical point, originating from the two decoupled subsystems with opposite Chern numbers. However, the absence of structure inversion symmetry leads to a mixture between these two subsystems, gives rise to a line of critical points, and dramatically changes the scaling behavior. Hereinto, we predict a Berezinskii-Kosterlitz-Thouless-type transition during the Hall conductance plateau switching in the QAH insulators. Our results are instructive for both theoretic understanding of the zero Hall plateau transition and future transport experiments in the QAH insulators.

Broadband ultrafast terahertz spectroscopy in the 25 T Split Florida-Helix

We describe the development of a broadband (0.3-10 THz) optical pump-terahertz probe spectrometer with an unprecedented combination of temporal resolution (≤200 fs) operating in external magnetic fields as high as 25 T using the new Split Florida-Helix magnet system. Using this new instrument, we measure the transient dynamics in a gallium arsenide four-quantum well sample after photoexcitation at 800 nm.

Quantum Entanglement as a Diagnostic of Phase Transitions in Disordered Fractional Quantum Hall Liquids

We investigate the disorder-driven phase transition from a fractional quantum Hall state to an Anderson insulator using quantum entanglement methods. We find that the transition is signaled by a sharp increase in the sensitivity of a suitably averaged entanglement entropy with respect to disorder-the magnitude of its disorder derivative appears to diverge in the thermodynamic limit. We also study the level statistics of the entanglement spectrum as a function of disorder. However, unlike the dramatic phase-transition signal in the entanglement entropy derivative, we find a gradual reduction of level repulsion only deep in the Anderson insulating phase.

Observation of the Quantum Anomalous Hall Insulator to Anderson Insulator Quantum Phase Transition and its Scaling Behavior

Fundamental insight into the nature of the quantum phase transition from a superconductor to an insulator in two dimensions, or from one plateau to the next or to an insulator in the quantum Hall effect, has been revealed through the study of its scaling behavior. Here, we report on the experimental observation of a quantum phase transition from a quantum-anomalous-Hall insulator to an Anderson insulator in a magnetic topological insulator by tuning the chemical potential. Our experiment demonstrates the existence of scaling behavior from which we extract the critical exponent for this quantum phase transition. We expect that our work will motivate much further investigation of many properties of quantum phase transition in this new context.

Observation of the Zero Hall Plateau in a Quantum Anomalous Hall Insulator

We report experimental investigations on the quantum phase transition between the two opposite Hall plateaus of a quantum anomalous Hall insulator. We observe a well-defined plateau with zero Hall conductivity over a range of magnetic field around coercivity when the magnetization reverses. The features of the zero Hall plateau are shown to be closely related to that of the quantum anomalous Hall effect, but its temperature evolution exhibits a significant difference from the network model for a conventional quantum Hall plateau transition. We propose that the chiral edge states residing at the magnetic domain boundaries, which are unique to a quantum anomalous Hall insulator, are responsible for the novel features of the zero Hall plateau.

Non-universality of scaling exponents in quantum Hall transitions

We have investigated experimentally the scaling behaviour of quantum Hall transitions in GaAs/AlGaAs heterostructures of a range of mobility, carrier concentration, and spacer layer width. All three critical scaling exponents γ, κ and p were determined independently for each sample. We measure the localization length exponent to be γ ≈ 2.3, in good agreement with expected predictions from scaling theory, but κ and p are found to possess non-universal values. Results obtained for κ range from κ = 0.16 ± 0.02 to κ = 0.67 ± 0.02, and are found to be Landau level (LL) dependent, whereas p is found to decrease with increasing sample mobility. Our results demonstrate the existence of two transport regimes in the LL conductivity peak; universality is found within the quantum coherent transport regime present in the tails of the conductivity peak, but is absent within the classical transport regime found close to the critical point at the centre of the conductivity peak. We explain these results using a percolation model and show that the critical scaling exponent depends on certain important length scales that correspond to the microscopic description of electron transport in the bulk of a two-dimensional electron system.

ν=5/2 fractional quantum Hall state in the presence of alloy disorder

We report quantitative measurements of the impact of alloy disorder on the ν = 5/2 fractional quantum Hall state. Alloy disorder is controlled by the aluminum content x in the Al(x)Ga(1-x)As channel of a quantum well. We find that the ν = 5/2 state is suppressed with alloy scattering. To our surprise, in samples with alloy disorder the ν = 5/2 state appears at significantly reduced mobilities when compared to samples in which alloy disorder is not the dominant scattering mechanism. Our results highlight the distinct roles of the different types of disorder present in these samples, such as the short-range alloy and the long-range Coulomb disorder.

Multifractality at Anderson transitions with Coulomb interaction

We explore mesoscopic fluctuations and correlations of the local density of states (LDOS) near localization transition in a disordered interacting electronic system. It is shown that the LDOS multifractality survives in the presence of the Coulomb interaction. We calculate the spectrum of multifractal dimensions in 2+ϵ spatial dimensions and show that it differs from that in the absence of interaction. The multifractal character of fluctuations and correlations of the LDOS can be studied experimentally by scanning tunneling microscopy of two-dimensional and three-dimensional disordered structures.

Insulator, semiclassical oscillations and quantum Hall liquids at low magnetic fields

Magneto-transport measurements are performed on two-dimensional GaAs electron systems to probe the quantum Hall (QH) effect at low magnetic fields. Oscillations following the Shubnikov-de Haas (SdH) formula are observed in the transition from the insulator to QH liquid when the observed almost temperature-independent Hall slope indicates insignificant interaction correction. Our study shows that the existence of SdH oscillations in such a transition can be understood based on the non-interacting model.

Magneto-transport of graphene and quantum phase transitions in the quantum Hall regime

In this paper we show the electronic transport and the quantum phase transitions that characterize the quantum Hall regime in graphene placed on SiO(2) substrates at magnetic fields up to 28 T and temperatures down to 4 K. The analysis of the temperature dependence of the Hall and longitudinal resistivity reveals intriguing non-universalities of the critical exponents of the plateau-insulator transition. These exponents depend on the type of disorder that governs the electrical transport and its characterization is important for the design and fabrication of novel graphene nano-devices.

Numerical study of the localization length critical index in a network model of plateau-plateau transitions in the quantum Hall effect

We calculate numerically the localization length critical index within the Chalker-Coddington model of the plateau-plateau transitions in the quantum Hall effect. We report a finite-size scaling analysis using both the traditional power-law corrections to the scaling function and the inverse logarithmic ones, which provided a more stable fit resulting in the localization length critical index ν = 2.616 ± 0.014. We observe an increase of the critical exponent ν with the system size, which is possibly the origin of discrepancies with early results obtained for smaller systems.

Impact of disorder on the 5/2 fractional quantum Hall state

We compare the energy gap of the ν = 5/2 fractional quantum Hall effect state obtained in conventional high mobility modulation-doped quantum-well samples with those obtained in high quality GaAs transistors (heterojunction insulated gate field-effect transistors). We are able to identify the different roles that long-range and short-range disorders play in the 5/2 state and observe that the long-range potential fluctuations are more detrimental to the strength of the 5/2 state than short-range potential disorder.

Chemical pressure, dilution and disorder in the heavy fermion compounds Ce(3-x)La(x)Pd₂₀Si₆ (x=1/3, 2/3)

The heavy fermion compound Ce3Pd20Si6 is one of the rare examples of a cubic system with a readily accessible quantum critical point. Ce atoms at the two different sites 4a and 8c of the crystal structure have recently been shown to have different crystal field ground states (Γ7 and Γ8, respectively) and are assumed to be responsible for the two different low-temperature phase transitions at T(L) and T(U), which have been tentatively attributed to antiferromagnetic and antiferroquadrupolar order, respectively. Here we present electrical resistivity measurements in a wide temperature range (50 mK-300 K) on two new representatives of the La substitution series Ce(3 - x)La(x)Pd20Si6, x=1/3 and 2/3. Put in the context of previously published data our results indicate that La preferentially occupies the 4a site and that Ce ions at the 8c site have a sizably larger Kondo temperature. Low-temperature resistivity measurements in applied magnetic fields suggest that (disorder smeared) quantum critical points exist in the x=1/3 and 2/3 samples at fields below 1 T.

On the direct insulator-quantum Hall transition in two-dimensional electron systems in the vicinity of nanoscaled scatterers

A direct insulator-quantum Hall (I-QH) transition corresponds to a crossover/transition from the insulating regime to a high Landau level filling factor ν > 2 QH state. Such a transition has been attracting a great deal of both experimental and theoretical interests. In this study, we present three different two-dimensional electron systems (2DESs) which are in the vicinity of nanoscaled scatterers. All these three devices exhibit a direct I-QH transition, and the transport properties under different nanaoscaled scatterers are discussed.