Two-dimensional confinement of 3d{1} electrons in LaTiO_{3}/LaAlO{3} multilayers

Band gap, Jahn-Teller deformation, octahedra rotation in transition metal perovskites LaTiO 3

The LaTiO3 perovskite (where Ti is in a d1 state) is investigated by using an all electron Gaussian basis and many functionals, ranging from pure GGA (PBE), to hybrids (full range, B3LYP and PBE0, and range separated, HSE06) to Hartree Fock. Recently, Varignon et al. (Phys. Rev. Res 1, 033131, 2019), showed that, when GGA+U or HSE06 are used, a metallic solution and fractional occupancy of the t2 g subshell are obtained. Here, it is shown that when a full range hybrid functional is used, an integer occupancy is obtained, as suggested by the Jahn-Teller theorem. When the exact exchange percentage varies from 0 to 100, the system is insulating when it exceeds 20. By reducing progressively the symmetry from cubic down to orthorhombic, the relative importance of the Jahn-Teller deformation and of the rotation of the octahedra is explored.

Effect of Mn doping and charge transfer on LaTi1-xMnxO3

We report the magnetic and electronic transport properties of Mn-doped LaTi_1-xMn_xO₃(x= 0, 0.1, 0.3, 0.5) as a function of temperature and an applied magnetic field. It was found that the Mn-doped samples show a magnetic transition which is not present in the parent LaTiO₃. The Mn-doped samples showed fluctuations in magnetization at low fields below their Néel transition temperature indicating electronic phase separation in the material. Increased Mn content in the sample strengthens the ferromagnetic-like moment while maintaining G-type antiferromagnetic phase by charge transfer from Mn to Ti and influencing orbital ordering of the Ti³⁺t_2gorbitals. The results are discussed in parallel with transport and bulk magnetization measurements detailing the electronic behavior. An additional context for the mechanism is supported by first-principles density-function theory calculations.

Direct Nanoscale Analysis of Temperature-Resolved Growth Behaviors of Ultrathin Perovskites on SrTiO3

Revealing growth mechanism of a thin film and properties of its film-substrate interface necessarily require microscopic investigations on the initial growth stages in temperature- and thickness-resolved manners. Here we applied in situ scanning tunneling microscopy and atomic force microscopy to investigate the growth dynamics in homo- (SrTiO3) and hetero- (SrRuO3) epitaxies on SrTiO3(001). A comparison of temperature-dependent surface structures of SrRuO3 and SrTiO3 films suggests that the peculiar growth mode switching from a "layer-by-layer" to "step-flow" type in a SrRuO3 films arises from a reduction of surface migration barrier, caused by the change in the chemical configuration of the interface between the topmost and underlying layers. Island densities in perovskite epitaxies exhibited a clear linear inverse-temperature dependence. A prototypical study on island nucleation stage of SrTiO3 homoepitaxy revealed that classical diffusion model is valid for the perovskite growths.

Dimensionality control of d-orbital occupation in oxide superlattices

Manipulating the orbital state in a strongly correlated electron system is of fundamental and technological importance for exploring and developing novel electronic phases. Here, we report an unambiguous demonstration of orbital occupancy control between t_2g and e_g multiplets in quasi-two-dimensional transition metal oxide superlattices (SLs) composed of a Mott insulator LaCoO₃ and a band insulator LaAlO₃. As the LaCoO₃ sublayer thickness approaches its fundamental limit (i.e. one unit-cell-thick), the electronic state of the SLs changed from a Mott insulator, in which both t_2g and e_g orbitals are partially filled, to a band insulator by completely filling (emptying) the t_2g (e_g) orbitals. We found the reduction of dimensionality has a profound effect on the electronic structure evolution, which is, whereas, insensitive to the epitaxial strain. The remarkable orbital controllability shown here offers a promising pathway for novel applications such as catalysis and photovoltaics, where the energy of d level is an essential parameter.

Oxygen-vacancy-induced orbital reconstruction of Ti ions at the interface of LaAlO3/SrTiO3 heterostructures: a resonant soft-X-ray scattering study

Resonant soft-x-ray scattering measurements have been performed to investigate interface electronic structures of (LaAlO(3)/SrTiO(3)) superlattices. Resonant scattering intensities at superlattice reflections show clear evidence of degeneracy lifting in t(2g) states of interface Ti ions. Polarization dependence of intensities indicates the energy of d(xy) states is lower by ~1 eV than two other t(2g) states. The energy splitting is insensitive to epitaxial strain. The orbital reconstruction is induced by oxygen vacancies and confined to the interface within two unit cells, indicating charge compensation at the polar interfaces.

Metal-insulator transition and orbital reconstruction in Mott-type quantum wells made of NdNiO3

The metal-insulator transition and the underlying electronic and orbital structure in e(g)(1) quantum wells based on NdNiO3 were investigated by dc transport and resonant soft x-ray absorption spectroscopy. By comparing quantum wells of the same dimension but with two different confinement structures, we explicitly demonstrate that the quantum well boundary condition of correlated electrons is critical to selecting the many-body ground state. In particular, the long-range orderings and the metal-insulator transition are found to be strongly enhanced under quantum confinement by sandwiching NdNiO(3) with the wide-gap dielectric LaAlO(3), while they are suppressed when one of the interfaces is replaced by a surface (interface with vacuum). Resonant spectroscopy reveals that the reduced charge fluctuations in the sandwich structure are supported by the enhanced propensity to charge ordering due to the suppressed e(g) orbital splitting when interfaced with the confining LaAlO3 layer.

Emergent phenomena at oxide interfaces

Recent technical advances in the atomic-scale synthesis of oxide heterostructures have provided a fertile new ground for creating novel states at their interfaces. Different symmetry constraints can be used to design structures exhibiting phenomena not found in the bulk constituents. A characteristic feature is the reconstruction of the charge, spin and orbital states at interfaces on the nanometre scale. Examples such as interface superconductivity, magneto-electric coupling, and the quantum Hall effect in oxide heterostructures are representative of the scientific and technological opportunities in this rapidly emerging field.

Spontaneous 2-dimensional carrier confinement at the n-type SrTiO3/LaAlO3 interface

We describe the intrinsic mechanism of 2-dimensional electron confinement at the n-type SrTiO3/LaAlO3 interface as a function of the sheet carrier density n(s) via advanced first-principles calculations. Electrons localize spontaneously in Ti 3d(xy) levels within a thin (≲2  nm) interface-adjacent SrTiO3 region for n(s) lower than a threshold value n(c)∼10(14)  cm(-2). For n(s)>n(c) a portion of charge flows into Ti 3d(xz)-d(yz) levels extending farther from the interface. This intrinsic confinement can be attributed to the interface-induced symmetry breaking and localized nature of Ti 3d t(2g) states. The sheet carrier density directly controls the binding energy and the spatial extension of the conductive region. A direct, quantitative relation of these quantities with n(s) is provided.