Space-charge modulation in vacuum microdiodes at THz frequencies

Violation of the transit-time limit toward generation of ultrashort electron bunches with controlled velocity chirp

Various methods to generate ultrashort electron bunches for the ultrafast science evolved from the simple configuration of two-plate vacuum diodes to advanced technologies such as nanotips or photocathodes excited by femtosecond lasers. In a diode either in vacuum or of solid-state, the transit-time limit originating from finite electron mobility has caused spatiotemporal bunch-collapse in ultrafast regime. Here, we show for the first time that abrupt exclusion of transit-phase is a more fundamental origin of the bunch-collapse than the transit-time limit. We found that by significantly extending the cathode-anode gap distance, thereby violating the transit-time limit, the conventional transit-time-related upper frequency barrier in diodes can be removed. Furthermore, we reveal how to control the velocity chirp of bunches leading to ballistic bunch-compression. Demonstration of 0.707 THz-, 46.4 femtosecond-bunches from a 50 μm-wide diode in three-dimensional particle-in-cell simulations shows a way toward simple and compact sources of ultrafast electron bunches for diverse ultrafast sciences.

Novel scaling laws for the Langmuir-Blodgett solutions in cylindrical and spherical diodes

It is found that the Langmuir-Blodgett solutions for the space charge limited current density, for both cylindrical and spherical diodes, may be approximated by Japp=(4/9)ε0sqrt[(2e/m)](Ec3/2/sqrt[D]) over a wide range of parameters, where Ec is the surface electric field on the cathode of the vacuum diode and D is the anode-cathode spacing. This dependence is valid whether Ra/Rc is greater than or less than unity, where Ra and Rc are, respectively, the anode and cathode radius. Minor empirical corrections to the above scaling yield fitting formulas that are accurate to within 5% for 3×10(-5)<Rc/Ra<500. An explanation of this scaling is given. An accurate transit time model yields the Langmuir-Blodgett solutions even in the Coulomb blockade regime for a nanogap, where the electron number may be in the single digits, and the transit time frequency is in the THz range.

Stability and energetics of Bursian diodes

We present an analysis of the stability, energy, and torque properties of a model Bursian diode in a one dimensional Eulerian framework using the cold Euler-Poisson fluid equations. In regions of parameter space where there are two sets of equilibrium solutions for the same boundary conditions, one solution is found to be stable and the other unstable to linear perturbations. Following the linearly unstable solutions into the nonlinear regime, we find they relax to the stable equilibrium. A description of this process in terms of kinetic, potential and boundary-flux energies is given, and the relation to a Hamiltonian formulation is commented on. A nonlocal torque integral theorem relating the prescribed boundary data to the average current in the domain is also provided. The results will be useful for numerical verification purposes, and understanding Bursian diodes in general.

Beyond the Child-Langmuir limit

This article presents a new formulation of the solution for fully nonlinear and unsteady planar flow of an electron beam in a diode. Using characteristic variables (i.e., variables that follow particle paths) the solution is expressed through an exact analytic, but implicit, formula for any choice of incoming velocity v(0), electric field E(0), and current J(0). For steady solutions, this approach clarifies the origin of the maximal current J(max), derived by Child and Langmuir for v(0) = 0 and by Jaffe for v(0) > 0. The implicit formulation is used to find (1) unsteady solutions having constant incoming flux J(0) > J(max), which leads to formation of a virtual cathode, and (2) time-periodic solutions whose average flux exceeds the adiabatic average of J(max).