Magnetic response of an ultrathin cobalt film in contact with an organic pentacene layer

Influence of gamma-ray irradiation and post-annealing studies on pentacene films: the anisotropic effects on structural and electronic properties

In this work, γ-ray irradiation effects on pentacene thin films are investigated in terms of the change in the crystallinity, and electronic structure as well as chemical states of the film. The pentacene films are γ-irradiated up to 3 kGy and then characterized using synchrotron X-ray diffraction, near edge X-ray absorption fine structure (NEXAFS) and X-ray photoelectron spectroscopy. We found that γ-ray irradiation creates defects, resulting in a decrease of X-ray diffraction intensity both in the plane normal and in-plane directions. From angle dependent NEXAFS; the transition of C 1s to π* orbital for irradiated samples increases; suggesting that the unoccupied π* states enhance due to defects or radical formation in pentacene thin films. Additionally, the in-plane resistivity shows a decreasing trend of resistance after irradiation. This trend of increase in conductivity is also consistent with C 1s to π transition, which manifests the increase in carrier concentration. Hall effect measurements further confirmed the increase in carrier concentration as a function of dose; however, the mobility of the sample decreases as the dose rate increases due to the defects created. By post-irradiation annealing, the thin film phase diffraction intensity can be recovered. Altogether, the anisotropic studies on pentacene films disclosed that the irradiation leads to defect formation along in-plane and plane normal directions. Overall, these results suggest that pentacene is one of the robust organic electronic materials; whose structure remains mostly intact even after irradiation up to a dose of 3 kGy.

Spin-Dependent Molecule Symmetry at a Pentacene-Co Spinterface

Incorporating spin-polarized scanning tunneling microscopy (SP-STM) measurements and first-principles calculations, we resolve spin-polarized states and consequent features in a pentacene(PEN)-Co hybrid system. Symmetry reduction of PEN clarifies the PEN adsorption site and the Co stacking methods. Near the Fermi energy, the molecular symmetry is spin-dependently recovered and an inversion of spin-polarization in PEN with respect to Co is observed. The experimental findings and calculation results are interpreted by a pz-d hybridization model, in which spin-dependent bonding-antibonding splitting of molecular orbitals happens at metal-organic spinterfaces.

Morphology evolution during stress relaxation of cobalt films due to dissolution in electrolyte solutions

Unlike the stress relaxation of perfect cobalt film (the dotted cure), the relaxation of cobalt film with surface imperfections (such as black pin-holes in above insert) displayed irreversible characters and was suggested to be the result of cobalt dissolution in electrolytes, which could be eliminated by additives such as Cl⁻.

The first decade of organic spintronics research

The significant milestones in organic spintronics achieved during the first decade of research are reviewed.

Enhanced Magnetic Anisotropy via Quasi-Molecular Magnet at Organic-Ferromagnetic Contact

To realize the origin of efficient spin injection at organic-ferromagnetic contact in organic spintronics, we have implemented the formation of quasi-molecular magnet via surface restructuring of a strong organic acceptor, tetrafluoro-tetracyano-quinodimethane (F4-TCNQ), in contact with ferromagnetic cobalt. Our results demonstrate a spin-polarized F4-TCNQ layer and a remarkably enhanced magnetic anisotropy of the Co film. The novel magnetic properties are contributed from strong magnetic coupling caused by the molecular restructuring that displays an angular anchoring conformation of CN and upwardly protruding fluorine atoms. We conclude that the π bonds of CN, instead of the lone-pair electrons of N atoms, contribute to the hybridization-induced magnetic coupling between CN and Co and generate a superior magnetic order on the surface.

Spin polarized electron tunneling and magnetoresistance in molecular junctions

This chapter reviews tunneling of spin-polarized electrons through molecules positioned between ferromagnetic electrodes, which gives rise to tunneling magnetoresistance. Such measurements yield important insight into the factors governing spin-polarized electron injection into organic semiconductors, thereby offering the possibility to manipulate the quantum-mechanical spin degrees of freedom for charge carriers in optical/electrical devices. In the first section of the chapter a brief description of the Jullière model of spin-dependent electron tunneling is reviewed. Next, a brief description of device fabrication and characterization is presented. The bulk of the review highlights experimental studies on spin-polarized electron tunneling and magnetoresistance in molecular junctions. In addition, some experiments describing spin-polarized scanning tunneling microscopy/spectroscopy on single molecules are mentioned. Finally, some general conclusions and prospectus on the impact of spin-polarized tunneling in molecular junctions are offered.