1
|
Iñarrea J. Photo-oscillations in MgZnO/ZnO heterostructures. Sci Rep 2022; 12:22463. [PMID: 36577777 PMCID: PMC9797542 DOI: 10.1038/s41598-022-27091-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/28/2022] [Accepted: 12/26/2022] [Indexed: 12/29/2022] Open
Abstract
We theoretically examine the characteristics of microwave-induced magnetoresistance (MIRO) and photovoltage oscillations in MgZno/ZnO heterostructures. We demonstrate that both kind of oscillations, although described with different physical properties, are intimately related sharing the same physical origin. We use the radiation driven electron orbit model showing that the interplay of radiation driven swinging Landau orbits and the scattering processes are at the heart of the oscillations in both scenarios. Thus, our simulations show that all photo-oscillations present the main features of MIRO: they are periodic with the inverse of the magnetic field and the oscillations minima are 1/4 cycle shifted.
Collapse
Affiliation(s)
- Jesús Iñarrea
- grid.7840.b0000 0001 2168 9183Escuela Politécnica Superior, Universidad Carlos III, Leganes, 28911 Madrid, Spain ,grid.4711.30000 0001 2183 4846Unidad Asociada al Instituto de Ciencia de Materiales, CSIC, Cantoblanco, 28049 Madrid, Spain
| |
Collapse
|
2
|
Abstract
We theoretically analyze the rise of photovoltage oscillations in hexagonal boron-nitride (h-BN) encapsulated monolayer graphene (h-BN/graphene/h-BN) when irradiated with terahertz radiation. We use an extension of the radiation-driven electron orbit model, successfully applied to study the oscillations obtained in irradiated magnetotransport of GaAs/AlGaAs heterostructures. The extension takes mainly into account that now the carriers are massive Dirac fermions. Our simulations reveal that the photovoltage in these graphene systems presents important oscillations similar to the ones of irradiated magnetoresistance in semiconductor platforms but in the terahertz range. We also obtain that these oscillations are clearly affected by the voltages applied to the sandwiched graphene: a vertical gate voltage between the two hBN layers and an external positive voltage applied to one of the sample sides. The former steers the carrier effective mass and the latter the photovoltage intensity and the oscillations amplitude. The frequency dependence of the photo-oscillations is also investigated.
Collapse
|
3
|
Chang CC, Lin L, Chen GY. Photon-Assisted Perfect Conductivity Between Arrays of Two-Level Atoms. Sci Rep 2019; 9:13033. [PMID: 31506596 PMCID: PMC6736950 DOI: 10.1038/s41598-019-49606-y] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/03/2019] [Accepted: 08/23/2019] [Indexed: 11/09/2022] Open
Abstract
We investigate interactions between two (parallel) arrays of two-level atoms (2LA) via photons through quantum electrodynamical interaction with one array (the source array) connected to a particle source, and we study the (photo-)resistivity of the other array (the measured array). The wave function of the interacted photon propagating in an array is a Bloch wave with a gap in its eigenvalue (the photonic dispersion). Due to interactions between arrayed 2LA and the dressed photonic field with non-linear dispersion, the conduction behaviors of the measured array can be very diversified according to the input energy of the particle source connected to the source array, and their relative positions. As a result, the resistivity of the measured array can be zero or negative, and can also be oscillatory with respect to the incoming energy of the particle source of the source array, and the separation between arrays.
Collapse
Affiliation(s)
- Chih-Chun Chang
- Department of Physics, National Chung Hsing University, Taichung, 402, Taiwan
| | - Lee Lin
- Department of Physics, National Chung Hsing University, Taichung, 402, Taiwan.
| | - Guang-Yin Chen
- Department of Physics, National Chung Hsing University, Taichung, 402, Taiwan.
| |
Collapse
|
4
|
Mani RG, Kriisa A, Munasinghe R. Radiation-induced magnetoresistance oscillations in monolayer and bilayer graphene. Sci Rep 2019; 9:7278. [PMID: 31086223 PMCID: PMC6513867 DOI: 10.1038/s41598-019-43866-4] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/01/2019] [Accepted: 05/02/2019] [Indexed: 11/29/2022] Open
Abstract
We examine the characteristics of the microwave/mm-wave/terahertz radiation-induced magnetoresistance oscillations in monolayer and bilayer graphene and report that the oscillation frequency of the radiation-induced magnetoresistance oscillations in the massless, linearly dispersed monolayer graphene system should depend strongly both on the Fermi energy, and the radiation frequency, unlike in the case of the massive, parabolic, GaAs/AlGaAs 2D electron system, where the radiation-induced magnetoresistance oscillation frequency depends mainly on the radiation frequency. This possible dependence of the magnetoresistance oscillation frequency on the Fermi level at a fixed radiation frequency also suggests a sensitivity to the gate voltage in gated graphene, which suggests an in-situ tunable photo-excitation response in monolayer graphene that could be useful for sensing applications. In sharp contrast to monolayer graphene, bilayer graphene is expected to show radiation-induced magnetoresistance oscillations more similar to the results observed in the GaAs/AlGaAs 2D system. Such expectations for the radiation-induced magnetoresistance oscillations are presented here to guide future experimental studies in both of these modern atomic layer material systems.
Collapse
Affiliation(s)
- R G Mani
- Georgia State University, Department of Physics and Astronomy, Atlanta, GA, 30303, USA.
| | - A Kriisa
- Georgia State University, Department of Physics and Astronomy, Atlanta, GA, 30303, USA
| | - R Munasinghe
- Georgia State University, Department of Physics and Astronomy, Atlanta, GA, 30303, USA
| |
Collapse
|
5
|
Cyclotron resonance in the high mobility GaAs/AlGaAs 2D electron system over the microwave, mm-wave, and terahertz- bands. Sci Rep 2019; 9:2409. [PMID: 30787380 PMCID: PMC6382766 DOI: 10.1038/s41598-019-39186-2] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/09/2018] [Accepted: 01/14/2019] [Indexed: 11/18/2022] Open
Abstract
The reflected microwave power from the photo-excited high mobility GaAs/AlGaAs 2D device has been measured over the wide frequency band spanning from 30 to 330 GHz simultaneously along with diagonal magnetoresistance as a function of the magnetic field. Easily distinguishable resonances in the reflected power signal are observed at the same magnetic fields as a reduced amplitude in the Shubnikov-de Haas (SdH) oscillations of the diagonal magnetoresistance. The reflection resonances with concurrent amplitude reduction in SdH oscillations are correlated with cyclotron resonance induced by microwave, mm-wave, and terahertz photoexcitation. The magnetoplasma effect was also investigated. The results suggest a finite frequency zero-magnetic-field intercept, providing an estimate for the plasma frequency. The experimentally measured plasma frequency appears to be somewhat lower than the estimated plasma frequency for these Hall bars. The results, in sum, are consistent with an effective mass ratio of m*/m = 0.067, the standard value, even in these high mobility GaAs/AlGaAs devices, at very large filling factors. Preliminary findings from this article have been published as conference proceedings, see Kriisa, A., et al., J. of Phys. Conf. Ser. 864, 012057 (2017).
Collapse
|
6
|
Coherent backscattering in quasi-ballistic ultra-high mobility GaAs/AlGaAs 2DES. Sci Rep 2018; 8:10061. [PMID: 29968817 PMCID: PMC6030049 DOI: 10.1038/s41598-018-28359-0] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/08/2018] [Accepted: 06/21/2018] [Indexed: 11/25/2022] Open
Abstract
A small and narrow negative-magnetoresistance (MR) effect that appears about null magnetic field over the interval −0.025 ≤ B ≤ 0.025 T in magnetotransport studies of the GaAs/AlGaAs 2D system with μ ≈ 107cm2/Vs is experimentally examined as a function of the sample temperature, T. The temperature dependent magnetoresistance data were fit using the Hikami et al. theory, without including the spin-orbit correction, to extract the inelastic length, li, which decreases rapidly with increasing temperature. It turns out that li < le, where le is the elastic length, for all T. Thus, we measured the single particle lifetime, τs, and the single particle mean free path ls = vFτs. A comparison between li and ls indicates that li > ls. The results suggest that the observed small and narrow magnetoresistance effect about null magnetic field could be a manifestation of coherent backscattering due to small angle scattering from remote ionized donors in the high mobility GaAs/AlGaAs 2DES.
Collapse
|
7
|
Liu HC, Reichl C, Wegscheider W, Mani RG. B-periodic oscillations in the Hall-resistance induced by a dc-current-bias under combined microwave-excitation and dc-current bias in the GaAs/AlGaAs 2D system. Sci Rep 2018; 8:7878. [PMID: 29777195 PMCID: PMC5959913 DOI: 10.1038/s41598-018-26009-z] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/14/2018] [Accepted: 04/30/2018] [Indexed: 11/09/2022] Open
Abstract
We report the observation of dc-current-bias-induced B-periodic Hall resistance oscillations and Hall plateaus in the GaAs/AlGaAs 2D system under combined microwave radiation- and dc bias excitation at liquid helium temperatures. The Hall resistance oscillations and plateaus appear together with concomitant oscillations also in the diagonal magnetoresistance. The periods of Hall and diagonal resistance oscillations are nearly identical, and source power (P) dependent measurements demonstrate sub-linear relationship of the oscillation amplitude with P over the span 0 < P ≤ 20 mW.
Collapse
Affiliation(s)
- Han-Chun Liu
- Department of Physics and Astronomy, Georgia State University, Atlanta, 30303, Georgia
| | - C Reichl
- Laboratorium für Festkörperphysik, ETH Zürich, Zürich, CH-8093, Switzerland
| | - W Wegscheider
- Laboratorium für Festkörperphysik, ETH Zürich, Zürich, CH-8093, Switzerland
| | - R G Mani
- Department of Physics and Astronomy, Georgia State University, Atlanta, 30303, Georgia.
| |
Collapse
|
8
|
Samaraweera RL, Liu HC, Wang Z, Reichl C, Wegscheider W, Mani RG. Mutual influence between current-induced giant magnetoresistance and radiation-induced magnetoresistance oscillations in the GaAs/AlGaAs 2DES. Sci Rep 2017; 7:5074. [PMID: 28698588 PMCID: PMC5505981 DOI: 10.1038/s41598-017-05351-8] [Citation(s) in RCA: 18] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/15/2017] [Accepted: 05/26/2017] [Indexed: 12/04/2022] Open
Abstract
Radiation-induced magnetoresistance oscillations are examined in the GaAs/AlGaAs 2D system in the regime where an observed concurrent giant magnetoresistance is systematically varied with a supplementary dc-current, Idc. The Idc tuned giant magnetoresistance is subsequently separated from the photo-excited oscillatory resistance using a multi-conduction model in order to examine the interplay between the two effects. The results show that the invoked multiconduction model describes the observed giant magnetoresistance effect even in the presence of radiation-induced magnetoresistance oscillations, the magnetoresistance oscillations do not modify the giant magnetoresistance, and the magnetoresistance oscillatory extrema, i.e., maxima and minima, disappear rather asymmetrically with increasing Idc. The results suggest the interpretation that the Idc serves to suppress scattering between states near the Fermi level in a strong magnetic field limit.
Collapse
Affiliation(s)
- R L Samaraweera
- Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia, 30303, USA
| | - H-C Liu
- Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia, 30303, USA
| | - Z Wang
- Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia, 30303, USA
| | - C Reichl
- Laboratorium für Festkörperphysik, ETH Zürich, CH-8093, Zürich, Switzerland
| | - W Wegscheider
- Laboratorium für Festkörperphysik, ETH Zürich, CH-8093, Zürich, Switzerland
| | - R G Mani
- Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia, 30303, USA.
| |
Collapse
|
9
|
Dressed Photons Induced Resistance Oscillation and Zero Resistance in Arrayed Simple Harmonic Oscillators with No Impurity. Sci Rep 2016; 6:37763. [PMID: 27886252 PMCID: PMC5123571 DOI: 10.1038/srep37763] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/09/2016] [Accepted: 11/01/2016] [Indexed: 11/25/2022] Open
Abstract
We investigate a system of an array of N simple harmonic oscillators (SHO) interacting with photons through QED interaction. As the energy of photon is around the spacing between SHO energy levels, energy gaps appear in the dispersion relation of the interacted (dressed) photons. This is quite different from the dispersion relation of free photons. Due to interactions between dressed photonic field and arrayed SHO, the photoresistance of this system shows oscillations and also drops to zero as irradiated by EM field of varying frequencies.
Collapse
|
10
|
Yar A, Sabeeh K. Radiation-assisted magnetotransport in two-dimensional electron gas systems: appearance of zero resistance states. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2015; 27:435007. [PMID: 26444638 DOI: 10.1088/0953-8984/27/43/435007] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Zero-resistance states (ZRS) are normally associated with superconducting and quantum Hall phases. Experimental detection of ZRS in two-dimensional electron gas (2DEG) systems irridiated by microwave(MW) radiation in a magnetic field has been quite a surprise. We develop a semiclassical transport formalism to explain the phenomena. We find a sequence of Zero-Resistance States (ZRS) inherited from the suppression of Shubnikov-de Haas (SdH) oscillations under the influence of high-frequency and large amplitude microwave radiation. Furthermore, the ZRS are well pronounced and persist up to broad intervals of magnetic field as observed in experiments on microwave illuminated 2DEG systems.
Collapse
Affiliation(s)
- Abdullah Yar
- Department of Physics, Kohat University of Science and Technology, Kohat-26000, Khyber Pakhtunkhwa, Pakistan
| | | |
Collapse
|
11
|
Iñarrea J, Platero G. Radiation-induced resistance oscillations in a 2D hole gas: a demonstration of a universal effect. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2015; 27:415801. [PMID: 26413837 DOI: 10.1088/0953-8984/27/41/415801] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
We report on a theoretical study about the microwave-induced resistance oscillations and zero resistance states when dealing with p-type semiconductors and holes instead of electrons. We consider a high-mobility two-dimensional hole gas hosted in a pure Ge/SiGe quantum well. Similarly to electrons we obtain radiation-induced resistance oscillations and zero resistance states. We analytically deduce a universal expression for the irradiated magnetoresistance, explaining the origin of the minima positions and their 1/4 cycle phase shift. The outcome is that these phenomena are universal and only depend on radiation and cyclotron frequencies. We also study the possibility of having simultaneously two different carriers driven by radiation: light and heavy holes. As a result the calculated magnetoresistance reveals an interference profile due to the different effective masses of the two types of carriers.
Collapse
Affiliation(s)
- Jesús Iñarrea
- Escuela Politécnica Superior, Universidad Carlos III, Leganes, Madrid 28911, Spain. Unidad Asociada al Instituto de Ciencia de Materiales, CSIC, Cantoblanco, Madrid 28049, Spain
| | | |
Collapse
|
12
|
Comparative study of microwave radiation-induced magnetoresistive oscillations induced by circularly- and linearly- polarized photo-excitation. Sci Rep 2015; 5:14880. [PMID: 26450679 PMCID: PMC4598735 DOI: 10.1038/srep14880] [Citation(s) in RCA: 29] [Impact Index Per Article: 3.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/08/2015] [Accepted: 09/10/2015] [Indexed: 11/08/2022] Open
Abstract
A comparative study of the radiation-induced magnetoresistance oscillations in the high mobility GaAs/AlGaAs heterostructure two dimensional electron system (2DES) under linearly- and circularly- polarized microwave excitation indicates a profound difference in the response observed upon rotating the microwave launcher for the two cases, although circularly polarized microwave radiation induced magnetoresistance oscillations observed at low magnetic fields are similar to the oscillations observed with linearly polarized radiation. For the linearly polarized radiation, the magnetoresistive response is a strong sinusoidal function of the launcher rotation (or linear polarization) angle, θ. For circularly polarized radiation, the oscillatory magnetoresistive response is hardly sensitive to θ.
Collapse
|
13
|
Chepelianskii AD, Watanabe M, Nasyedkin K, Kono K, Konstantinov D. An incompressible state of a photo-excited electron gas. Nat Commun 2015; 6:7210. [PMID: 26007282 PMCID: PMC4455090 DOI: 10.1038/ncomms8210] [Citation(s) in RCA: 33] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/08/2014] [Accepted: 04/17/2015] [Indexed: 11/09/2022] Open
Abstract
Two-dimensional electrons in a magnetic field can form new states of matter characterized by topological properties and strong electronic correlations as displayed in the integer and fractional quantum Hall states. In these states, the electron liquid displays several spectacular characteristics, which manifest themselves in transport experiments with the quantization of the Hall resistance and a vanishing longitudinal conductivity or in thermodynamic equilibrium when the electron fluid becomes incompressible. Several experiments have reported that dissipationless transport can be achieved even at weak, non-quantizing magnetic fields when the electrons absorb photons at specific energies related to their cyclotron frequency. Here we perform compressibility measurements on electrons on liquid helium demonstrating the formation of an incompressible electronic state under these resonant excitation conditions. This new state provides a striking example of irradiation-induced self-organization in a quantum system. Two-dimensional phases of electrons exhibit interesting phenomena under magnetic fields. Chepelianskii et al. show that electrons on liquid helium exhibit an incompressible state when they are excited by a microwave field at particular frequencies related with the Landau level spacing.
Collapse
Affiliation(s)
- Alexei D Chepelianskii
- 1] LPS, Université Paris-Sud, CNRS, UMR 8502, Orsay F-91405, France [2] Cavendish Laboratory, University of Cambridge, J J Thomson Avenue, Cambridge CB3 OHE, UK
| | - Masamitsu Watanabe
- Low Temperature Physics Laboratory, RIKEN, Wako, Saitama 351-0198, Japan
| | - Kostyantyn Nasyedkin
- Quantum Condensed Phases Research Team, RIKEN CEMS, Wako, Saitama 351-0198, Japan
| | - Kimitoshi Kono
- 1] Quantum Condensed Phases Research Team, RIKEN CEMS, Wako, Saitama 351-0198, Japan [2] Institute of Physics, National Chiao Tung University, Hsinchu 30010, Taiwan [3] Institute of Physics, Kazan Federal University, Kazan 420008, Russia
| | - Denis Konstantinov
- Okinawa Institute of Science and Technology, Onna, Okinawa 904-0412, Japan
| |
Collapse
|
14
|
Dorozhkin SI, Umansky V, Pfeiffer LN, West KW, Baldwin K, von Klitzing K, Smet JH. Random flips of electric field in microwave-induced states with spontaneously broken symmetry. PHYSICAL REVIEW LETTERS 2015; 114:176808. [PMID: 25978254 DOI: 10.1103/physrevlett.114.176808] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/08/2014] [Indexed: 06/04/2023]
Abstract
In a two-dimensional electron system subject to microwaves and a magnetic field, photovoltages emerge. They can be separated into two components originating from built-in electric fields and electric field domains arising from spontaneous symmetry breaking. The latter occurs in the zero resistance regime only and manifests itself in pulsed behavior, synchronous across the sample. The pulses show sign reversal. This implies a flip of the field in each domain, consistent with the existence of two equally probable electric field domain configurations due to the spontaneous symmetry breaking.
Collapse
Affiliation(s)
- S I Dorozhkin
- Institute of Solid State Physics, Chernogolovka, Moscow District 142432, Russia
| | - V Umansky
- Department of Physics, Weizmann Institute of Science, 76100 Rehovot, Israel
| | - L N Pfeiffer
- Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974, USA
| | - K W West
- Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974, USA
| | - K Baldwin
- Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974, USA
| | - K von Klitzing
- Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-70569 Stuttgart, Germany
| | - J H Smet
- Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-70569 Stuttgart, Germany
| |
Collapse
|
15
|
Dmitriev IA, Khodas M, Mirlin AD, Polyakov DG. Emergence of domains and nonlinear transport in the zero-resistance state. PHYSICAL REVIEW LETTERS 2013; 111:206801. [PMID: 24289699 DOI: 10.1103/physrevlett.111.206801] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/05/2013] [Indexed: 06/02/2023]
Abstract
We study transport in the domain state, the so-called zero-resistance state, that emerges in a two-dimensional electron system in which the combined action of microwave radiation and magnetic field produces a negative absolute conductivity. We show that the voltage-biased system has a rich phase diagram in the system size and voltage plane, with second- and first-order transitions between the domain and homogeneous states for small and large voltages, respectively. We find the residual negative dissipative resistance in the stable domain state.
Collapse
Affiliation(s)
- I A Dmitriev
- Max Planck Institute for Solid State Research, 70569 Stuttgart, Germany and Institut für Theorie der Kondensierten Materie and DFG Center for Functional Nanostructures, Karlsruhe Institute of Technology, 76128 Karlsruhe, Germany and Institut für Nanotechnologie, Karlsruhe Institute of Technology, 76021 Karlsruhe, Germany and Ioffe Physical Technical Institute, 194021 St. Petersburg, Russia
| | | | | | | |
Collapse
|
16
|
Iñarrea J. Microwave-induced resistance oscillations and zero resistance states in 2D bilayer systems. NANOSCALE RESEARCH LETTERS 2013; 8:259. [PMID: 23718625 PMCID: PMC3681596 DOI: 10.1186/1556-276x-8-259] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/09/2012] [Accepted: 04/03/2013] [Indexed: 06/02/2023]
Abstract
: We report on theoretical studies of recently obtained experimental results on microwave-induced resistance oscillations and zero resistance states in Hall bars with two occupied subbands. In these experiments, resistance presents a peculiar shape which appears to have a built-in interference effect not observed before. We apply the microwave-driven electron orbit model, which implies a radiation-driven oscillation of the two-dimensional electron system. Thus, we calculate different intra- and inter-subband electron scattering rates revealing different microwave-driven oscillations frequencies for the two electronic subbands. Calculated results are in good agreement with experiments.
Collapse
Affiliation(s)
- Jesus Iñarrea
- Escuela Politécnica Superior, Universidad Carlos III.
| |
Collapse
|