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Attiaoui A, Fettu G, Mukherjee S, Bauer M, Moutanabbir O. Electronic Signature of Subnanometer Interfacial Broadening in Heterostructures. NANO LETTERS 2022; 22:7080-7086. [PMID: 36027569 DOI: 10.1021/acs.nanolett.2c02042] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Interfaces are ubiquitous in semiconductor low-dimensional systems used in electronics, photonics, and quantum computing. Understanding their atomic-level properties has thus been crucial to controlling the basic behavior of heterostructures and optimizing the device performance. Herein, we demonstrate that subnanometer interfacial broadening in heterostructures induces localized energy states. This phenomenon is predicted within a theory incorporating atomic-level interfacial details obtained by atom probe tomography. The experimental validation is achieved using heteroepitaxial (Si1-xGex)m/(Si)m superlattices as a model system demonstrating the existence of additional paths for hole-electron recombination. These predicted interfacial electronic transitions and the associated absorptive effects are evaluated at variable superlattice thickness and periodicity. By mapping the energy of the critical points, the optical transitions are identified between 2 and 2.5 eV, thus extending the optical absorption to lower energies. This phenomenon is shown to provide an optical fingerprint for a straightforward and nondestructive probe of the subnanometer broadening in heterostructures.
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Affiliation(s)
- Anis Attiaoui
- Department of Engineering Physics, École Polytechnique de Montréal, C.P. 6079, Succ. Centre-Ville, Montréal, Québec, Canada H3C 3A7
| | - Gabriel Fettu
- Department of Engineering Physics, École Polytechnique de Montréal, C.P. 6079, Succ. Centre-Ville, Montréal, Québec, Canada H3C 3A7
| | - Samik Mukherjee
- Department of Engineering Physics, École Polytechnique de Montréal, C.P. 6079, Succ. Centre-Ville, Montréal, Québec, Canada H3C 3A7
| | - Matthias Bauer
- Applied Materials Inc., 974 E. Arques Avenue, Sunnyvale, California 94085, United States
| | - Oussama Moutanabbir
- Department of Engineering Physics, École Polytechnique de Montréal, C.P. 6079, Succ. Centre-Ville, Montréal, Québec, Canada H3C 3A7
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Niu G, Capellini G, Lupina G, Niermann T, Salvalaglio M, Marzegalli A, Schubert MA, Zaumseil P, Krause HM, Skibitzki O, Lehmann M, Montalenti F, Xie YH, Schroeder T. Photodetection in Hybrid Single-Layer Graphene/Fully Coherent Germanium Island Nanostructures Selectively Grown on Silicon Nanotip Patterns. ACS APPLIED MATERIALS & INTERFACES 2016; 8:2017-2026. [PMID: 26709534 DOI: 10.1021/acsami.5b10336] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Dislocation networks are one of the most principle sources deteriorating the performances of devices based on lattice-mismatched heteroepitaxial systems. We demonstrate here a technique enabling fully coherent germanium (Ge) islands selectively grown on nanotip-patterned Si(001) substrates. The silicon (Si)-tip-patterned substrate, fabricated by complementary metal oxide semiconductor compatible nanotechnology, features ∼50-nm-wide Si areas emerging from a SiO2 matrix and arranged in an ordered lattice. Molecular beam epitaxy growths result in Ge nanoislands with high selectivity and having homogeneous shape and size. The ∼850 °C growth temperature required for ensuring selective growth has been shown to lead to the formation of Ge islands of high crystalline quality without extensive Si intermixing (with 91 atom % Ge). Nanotip-patterned wafers result in geometric, kinetic-diffusion-barrier intermixing hindrance, confining the major intermixing to the pedestal region of Ge islands, where kinetic diffusion barriers are, however, high. Theoretical calculations suggest that the thin Si/Ge layer at the interface plays, nevertheless, a significant role in realizing our fully coherent Ge nanoislands free from extended defects especially dislocations. Single-layer graphene/Ge/Si-tip Schottky junctions were fabricated, and thanks to the absence of extended defects in Ge islands, they demonstrate high-performance photodetection characteristics with responsivity of ∼45 mA W(-1) and an Ion/Ioff ratio of ∼10(3).
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Affiliation(s)
- Gang Niu
- IHP , Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University , Xi'an 710049, China
| | - Giovanni Capellini
- IHP , Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
- Dipartimento di Scienze, Università Roma Tre , Viale Marconi 446, 00146 Rome, Italy
| | - Grzegorz Lupina
- IHP , Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
| | - Tore Niermann
- Technische Universität Berlin, Institut für Optik und Atomare Physik , Straße des 17 Juni 135, 10623 Berlin, Germany
| | - Marco Salvalaglio
- L-NESS and Department of Materials Science, Università degli Studi di Milano-Bicocca , via Cozzi 55, I-20125 Milan, Italy
| | - Anna Marzegalli
- L-NESS and Department of Materials Science, Università degli Studi di Milano-Bicocca , via Cozzi 55, I-20125 Milan, Italy
| | | | - Peter Zaumseil
- IHP , Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
| | | | | | - Michael Lehmann
- Technische Universität Berlin, Institut für Optik und Atomare Physik , Straße des 17 Juni 135, 10623 Berlin, Germany
| | - Francesco Montalenti
- L-NESS and Department of Materials Science, Università degli Studi di Milano-Bicocca , via Cozzi 55, I-20125 Milan, Italy
| | - Ya-Hong Xie
- Department of Materials Science and Engineering, University of California at Los Angeles , Los Angeles, California 90095-1595, United States
| | - Thomas Schroeder
- IHP , Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
- BTU Cottbus-Senftenberg , Konrad-Zuse-Straße 1, 03046 Cottbus, Germany
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Scheerschmidt K, Moutanabbir O. Tracking atomic processes throughout the formation of heteroepitaxial interfaces. CRYSTAL RESEARCH AND TECHNOLOGY 2015. [DOI: 10.1002/crat.201500061] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/10/2022]
Affiliation(s)
- Kurt Scheerschmidt
- Max Planck Institute of Microstructure Physics; Weinberg 2; Halle (Saale) 06120 Germany
| | - Oussama Moutanabbir
- Département de Génie Physique; Polytechnique Montréal; Montréal, C.P. 6079, Succ. Centre-Ville Montréal Québec H3C 3A7 Canada
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