1
|
Ravnik J, Vaskivskyi Y, Vodeb J, Diego M, Venturini R, Gerasimenko Y, Kabanov V, Kranjec A, Mihailovic D. Chiral domain dynamics and transient interferences of mirrored superlattices in nonequilibrium electronic crystals. Sci Rep 2023; 13:19622. [PMID: 37949956 PMCID: PMC10638312 DOI: 10.1038/s41598-023-46659-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/28/2023] [Accepted: 11/03/2023] [Indexed: 11/12/2023] Open
Abstract
Mirror symmetry plays a major role in determining the properties of matter and is of particular interest in condensed many-body systems undergoing symmetry breaking transitions under non-equilibrium conditions. Typically, in the aftermath of such transitions, one of the two possible broken symmetry states is emergent. However, synthetic systems and those formed under non-equilibrium conditions may exhibit metastable states comprising of both left (L) and right (R) handed symmetry. Here we explore the formation of chiral charge-density wave (CDW) domains after a laser quench in 1T-TaS2 with scanning tunneling microscopy. Typically, we observed transient domains of both chiralities, separated spatially from each other by domain walls with different structure. In addition, we observe transient density of states modulations consistent with interference of L and R-handed charge density waves within the surface monolayer. Theoretical modeling of the intertwined domain structures using a classical charged lattice gas model reproduces the experimental domain wall structures. The superposition (S) state cannot be understood classically within the correlated electron model but is found to be consistent with interferences of L and R-handed charge-density waves within domains, confined by surrounding domain walls, vividly revealing an interference of Fermi electrons with opposite chirality, which is not a result of inter-layer interference, but due to the interaction between electrons within a single layer, confined by domain wall boundaries.
Collapse
Affiliation(s)
- J Ravnik
- Complex Matter Department, Jozef Stefan Institute, Jamova 39, 1000, Ljubljana, Slovenia
- Laboratory for Micro and Nanotechnology, Paul Scherrer Institut (PSI), Forschungsstrasse 111, 5232, Villigen, Switzerland
| | - Ye Vaskivskyi
- Complex Matter Department, Jozef Stefan Institute, Jamova 39, 1000, Ljubljana, Slovenia
- Faculty for Mathematics and Physics, University of Ljubljana, Jadranska 19, 1000, Ljubljana, Slovenia
| | - J Vodeb
- Complex Matter Department, Jozef Stefan Institute, Jamova 39, 1000, Ljubljana, Slovenia
| | - M Diego
- Complex Matter Department, Jozef Stefan Institute, Jamova 39, 1000, Ljubljana, Slovenia
| | - R Venturini
- Complex Matter Department, Jozef Stefan Institute, Jamova 39, 1000, Ljubljana, Slovenia
- Faculty for Mathematics and Physics, University of Ljubljana, Jadranska 19, 1000, Ljubljana, Slovenia
| | - Ya Gerasimenko
- Center of Excellence on Nanoscience and Nanotechnology-Nanocenter (CENN Nanocenter), Jamova 39, 1000, Ljubljana, Slovenia
| | - V Kabanov
- Complex Matter Department, Jozef Stefan Institute, Jamova 39, 1000, Ljubljana, Slovenia
| | - A Kranjec
- Complex Matter Department, Jozef Stefan Institute, Jamova 39, 1000, Ljubljana, Slovenia
| | - D Mihailovic
- Complex Matter Department, Jozef Stefan Institute, Jamova 39, 1000, Ljubljana, Slovenia.
- Center of Excellence on Nanoscience and Nanotechnology-Nanocenter (CENN Nanocenter), Jamova 39, 1000, Ljubljana, Slovenia.
- Faculty for Mathematics and Physics, University of Ljubljana, Jadranska 19, 1000, Ljubljana, Slovenia.
| |
Collapse
|
2
|
Quantum billiards with correlated electrons confined in triangular transition metal dichalcogenide monolayer nanostructures. Nat Commun 2021; 12:3793. [PMID: 34145280 PMCID: PMC8213767 DOI: 10.1038/s41467-021-24073-0] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/15/2021] [Accepted: 06/01/2021] [Indexed: 11/23/2022] Open
Abstract
Forcing systems through fast non-equilibrium phase transitions offers the opportunity to study new states of quantum matter that self-assemble in their wake. Here we study the quantum interference effects of correlated electrons confined in monolayer quantum nanostructures, created by femtosecond laser-induced quench through a first-order polytype structural transition in a layered transition-metal dichalcogenide material. Scanning tunnelling microscopy of the electrons confined within equilateral triangles, whose dimensions are a few crystal unit cells on the side, reveals that the trajectories are strongly modified from free-electron states both by electronic correlations and confinement. Comparison of experiments with theoretical predictions of strongly correlated electron behaviour reveals that the confining geometry destabilizes the Wigner/Mott crystal ground state, resulting in mixed itinerant and correlation-localized states intertwined on a length scale of 1 nm. The work opens the path toward understanding the quantum transport of electrons confined in atomic-scale monolayer structures based on correlated-electron-materials. Atomically precise nanostructures resulting from a laser-induced phase change offer a rich playground to study the interplay between confinement and correlations. Here, the authors report on quantum interference effects in equilateral triangles created by a laser-induced polytype phase transition in TaS2.
Collapse
|
3
|
Yokoi M, Fujiwara S, Kawamura T, Arakawa T, Aoyama K, Fukuyama H, Kobayashi K, Niimi Y. Negative resistance state in superconducting NbSe 2 induced by surface acoustic waves. SCIENCE ADVANCES 2020; 6:6/34/eaba1377. [PMID: 32937360 PMCID: PMC7442479 DOI: 10.1126/sciadv.aba1377] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/07/2019] [Accepted: 07/09/2020] [Indexed: 06/11/2023]
Abstract
We report a negative resistance, namely, a voltage drop along the opposite direction of a current flow, in the superconducting gap of NbSe2 thin films under the irradiation of surface acoustic waves (SAWs). The amplitude of the negative resistance becomes larger by increasing the SAW power and decreasing temperature. As one possible scenario, we propose that soliton-antisoliton pairs in the charge density wave of NbSe2 modulated by the SAW serve as a time-dependent capacitance in the superconducting state, leading to the dc negative resistance. The present experimental result would provide a previously unexplored way to examine nonequilibrium manipulation of the superconductivity.
Collapse
Affiliation(s)
- Masahiko Yokoi
- Department of Physics, Graduate School of Science, Osaka University, Toyonaka 560-0043, Japan
| | - Satoshi Fujiwara
- Department of Physics, Graduate School of Science, Osaka University, Toyonaka 560-0043, Japan
| | - Tomoya Kawamura
- Department of Physics, Graduate School of Science, Osaka University, Toyonaka 560-0043, Japan
| | - Tomonori Arakawa
- Department of Physics, Graduate School of Science, Osaka University, Toyonaka 560-0043, Japan
- Center for Spin Research Network, Osaka University, Toyonaka 560-8531, Japan
| | - Kazushi Aoyama
- Department of Earth and Space Science, Graduate School of Science, Osaka University, Toyonaka 560-0043, Japan
| | - Hiroshi Fukuyama
- Department of Physics, Graduate School of Science, The University of Tokyo, Tokyo 113-0033, Japan
- Cryogenic Research Center, The University of Tokyo, Tokyo 113-0032, Japan
| | - Kensuke Kobayashi
- Department of Physics, Graduate School of Science, Osaka University, Toyonaka 560-0043, Japan
- Department of Physics, Graduate School of Science, The University of Tokyo, Tokyo 113-0033, Japan
- Institute for Physics of Intelligence, Graduate School of Science, The University of Tokyo, Tokyo 113-0033, Japan
| | - Yasuhiro Niimi
- Department of Physics, Graduate School of Science, Osaka University, Toyonaka 560-0043, Japan.
- Center for Spin Research Network, Osaka University, Toyonaka 560-8531, Japan
| |
Collapse
|
4
|
Zhu C, Chen Y, Liu F, Zheng S, Li X, Chaturvedi A, Zhou J, Fu Q, He Y, Zeng Q, Fan HJ, Zhang H, Liu WJ, Yu T, Liu Z. Light-Tunable 1T-TaS 2 Charge-Density-Wave Oscillators. ACS NANO 2018; 12:11203-11210. [PMID: 30299925 DOI: 10.1021/acsnano.8b05756] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/02/2023]
Abstract
External stimuli-controlled phase transitions are essential for fundamental physics and design of functional devices. Charge density wave (CDW) is a metastable collective electronic phase featured by the periodic lattice distortion. Much attention has been attracted to study the external control of CDW phases. Although much work has been done in the electric-field-induced CDW transition, the study of the role of Joule heating in the phase transition is insufficient. Here, using the Raman spectroscopy, the electric-field-driven phase transition is in situ observed in the ultrathin 1T-TaS2. By quantitative evaluation of the Joule heating effect in the electric-field-induced CDW transition, it is shown that Joule heating plays a secondary role in the nearly commensurate (NC) to incommensurate (IC) CDW transition, while it dominants the IC-NC CDW transition, providing a better understanding of the electric field-induced phase transition. More importantly, at room temperature, light illumination can modulate the CDW phase and thus tune the frequency of the ultrathin 1T-TaS2 oscillators. This light tunability of the CDW phase transition is promising for multifunctional device applications.
Collapse
Affiliation(s)
- Chao Zhu
- Center for Programmable Materials, School of Materials Science and Engineering , Nanyang Technological University , Singapore 639798 , Singapore
| | - Yu Chen
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences , Nanyang Technological University , Singapore 637371 , Singapore
| | - Fucai Liu
- Center for Programmable Materials, School of Materials Science and Engineering , Nanyang Technological University , Singapore 639798 , Singapore
- School of Optoelectronic Science and Engineering , University of Electronic Science and Technology of China , Chengdu 610054 , China
| | - Shoujun Zheng
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences , Nanyang Technological University , Singapore 637371 , Singapore
- Centre for Disruptive Photonic Technologies, School of Physical and Mathematical Sciences , Nanyang Technological University , Singapore 637371 , Singapore
| | - Xiaobao Li
- School of Civil Engineering , Hefei University of Technology , Hefei 230009 , China
| | - Apoorva Chaturvedi
- Center for Programmable Materials, School of Materials Science and Engineering , Nanyang Technological University , Singapore 639798 , Singapore
| | - Jiadong Zhou
- Center for Programmable Materials, School of Materials Science and Engineering , Nanyang Technological University , Singapore 639798 , Singapore
| | - Qundong Fu
- Center for Programmable Materials, School of Materials Science and Engineering , Nanyang Technological University , Singapore 639798 , Singapore
| | - Yongmin He
- Center for Programmable Materials, School of Materials Science and Engineering , Nanyang Technological University , Singapore 639798 , Singapore
| | - Qingsheng Zeng
- Center for Programmable Materials, School of Materials Science and Engineering , Nanyang Technological University , Singapore 639798 , Singapore
| | - Hong Jin Fan
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences , Nanyang Technological University , Singapore 637371 , Singapore
- Centre for Disruptive Photonic Technologies, School of Physical and Mathematical Sciences , Nanyang Technological University , Singapore 637371 , Singapore
| | - Hua Zhang
- Center for Programmable Materials, School of Materials Science and Engineering , Nanyang Technological University , Singapore 639798 , Singapore
| | - Wen-Jun Liu
- State Key Laboratory of ASIC and System, School of Microelectronics , Fudan University , Shanghai 200433 , China
| | - Ting Yu
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences , Nanyang Technological University , Singapore 637371 , Singapore
| | - Zheng Liu
- Center for Programmable Materials, School of Materials Science and Engineering , Nanyang Technological University , Singapore 639798 , Singapore
- NOVITAS, Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering , Nanyang Technological University , Singapore 639798 , Singapore
- CINTRA CNRS/NTU/THALES , UMI 3288, Research Techno Plaza , Singapore 637553 , Singapore
| |
Collapse
|
5
|
Kundu HK, Ray S, Dolui K, Bagwe V, Choudhury PR, Krupanidhi SB, Das T, Raychaudhuri P, Bid A. Quantum Phase Transition in Few-Layer NbSe_{2} Probed through Quantized Conductance Fluctuations. PHYSICAL REVIEW LETTERS 2017; 119:226802. [PMID: 29286803 DOI: 10.1103/physrevlett.119.226802] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/25/2017] [Indexed: 06/07/2023]
Abstract
We present the first observation of dynamically modulated quantum phase transition between two distinct charge density wave (CDW) phases in two-dimensional 2H-NbSe_{2}. There is recent spectroscopic evidence for the presence of these two quantum phases, but its evidence in bulk measurements remained elusive. We studied suspended, ultrathin 2H-NbSe_{2} devices fabricated on piezoelectric substrates-with tunable flakes thickness, disorder level, and strain. We find a surprising evolution of the conductance fluctuation spectra across the CDW temperature: the conductance fluctuates between two precise values, separated by a quantum of conductance. These quantized fluctuations disappear for disordered and on-substrate devices. With the help of mean-field calculations, these observations can be explained as to arise from dynamical phase transition between the two CDW states. To affirm this idea, we vary the lateral strain across the device via piezoelectric medium and map out the phase diagram near the quantum critical point. The results resolve a long-standing mystery of the anomalously large spectroscopic gap in NbSe_{2}.
Collapse
Affiliation(s)
| | - Sujay Ray
- Department of Physics, Indian Institute of Science, Bangalore 560012, India
| | - Kapildeb Dolui
- Department of Physics, Indian Institute of Science, Bangalore 560012, India
| | - Vivas Bagwe
- Tata Institute of Fundamental Research, Mumbai 400005, India
| | | | - S B Krupanidhi
- Materials Research Centre, Indian Institute of Science, Bangalore 560012, India
| | - Tanmoy Das
- Department of Physics, Indian Institute of Science, Bangalore 560012, India
| | | | - Aveek Bid
- Department of Physics, Indian Institute of Science, Bangalore 560012, India
| |
Collapse
|
6
|
Abstract
The nucleation and dynamics of Josephson and Abrikosov vortices determine the critical currents of layered high-Tc superconducting (HTS) thin films, grain boundaries, and coated conductors, so understanding their mechanisms is of crucial importance. Here, we treat pair creation of Josephson and Abrikosov vortices in layered superconductors as a secondary Josephson effect. Each full vortex is viewed as a composite fluid of micro-vortices, such as pancake vortices, which tunnel coherently via a tunneling matrix element. We introduce a two-terminal magnetic (Weber) blockade effect that blocks tunneling when the applied current is below a threshold value. We simulate vortex tunneling as a dynamic, time-correlated process when the current is above threshold. The model shows nearly precise agreement with voltage-current (V-I) characteristics of HTS cuprate grain boundary junctions, which become more concave rounded as temperature decreases, and also explains the piecewise linear V-I behavior observed in iron-pnictide bicrystal junctions and other HTS devices. When applied to either Abrikosov or Josephson pair creation, the model explains a plateau seen in plots of critical current vs. thickness of HTS-coated conductors. The observed correlation between theory and experiment strongly supports the proposed quantum picture of vortex nucleation and dynamics in layered superconductors.
Collapse
|
7
|
Ma Y, Lu C, Wang X, Du X, Li L, Petrovic C. Field-induced dielectric response saturation in o-TaS3. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2016; 28:395901. [PMID: 27485146 DOI: 10.1088/0953-8984/28/39/395901] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
We investigated dependence of the dielectric properties on temperature and electric field below 50 K along the chain direction of o-TaS3. With external electric field increase, two threshold features could be identified. For electric fields somewhat larger than the lower threshold [Formula: see text], the dielectric constant starts to decrease whereas the conductivity increases due to the tunnelling of solitons. For higher external electric field we observe a saturation of dielectric response and analyze that the possible reasons may be related to the polarization behavior of charged solitons. With a decrease in temperature, the effect of external field on the dielectric response of the system weakens gradually and at 13 K it diminishes due to soliton freezing.
Collapse
Affiliation(s)
- Yongchang Ma
- School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, People's Republic of China. Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, NY 11973, USA. Key Laboratory of Display Materials and Photoelectric Devices (Tianjin University of Technology), Ministry of Education, Tianjin 300384, People's Republic of China
| | | | | | | | | | | |
Collapse
|