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Wang K, Wu H, Zhang B, Yao X, Zhang J, Oxborrow M, Zhao Q. Tailoring Coherent Microwave Emission from a Solid-State Hybrid System for Room-Temperature Microwave Quantum Electronics. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024:e2401904. [PMID: 39007198 DOI: 10.1002/advs.202401904] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/22/2024] [Revised: 06/18/2024] [Indexed: 07/16/2024]
Abstract
Quantum electronics operating in the microwave domain are burgeoning and becoming essential building blocks of quantum computers, sensors, and communication devices. However, the field of microwave quantum electronics has long been dominated by the need for cryogenic conditions to maintain delicate quantum characteristics. Here, a solid-state hybrid system, constituted by a photo-excited pentacene triplet spin ensemble coupled to a dielectric resonator, is reported for the first time capable of both coherent microwave quantum amplification and oscillation at X band via the masing process at room temperature. By incorporating external driving and active dissipation control into the hybrid system, efficient tuning of the maser emission characteristics at ≈9.4 GHz is achieved, which is key to optimizing the performance of the maser device. The work not only pushes the boundaries of the operating frequency and functionality of the existing pentacene masers but also demonstrates a universal route for controlling the masing process at room temperature, highlighting opportunities for optimizing emerging solid-state masers for quantum information processing and communication.
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Affiliation(s)
- Kaipu Wang
- Center for Quantum Technology Research and Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurements (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Hao Wu
- Center for Quantum Technology Research and Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurements (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Bo Zhang
- Center for Quantum Technology Research and Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurements (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Xuri Yao
- Center for Quantum Technology Research and Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurements (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Jiakai Zhang
- Xi'an Electronic Engineering Research Institute, Xi'an, 710100, China
| | - Mark Oxborrow
- Department of Materials, Imperial College London, South Kensington, London, SW7 2AZ, UK
| | - Qing Zhao
- Center for Quantum Technology Research and Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurements (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
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2
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Monge R, Delord T, Thiering G, Gali Á, Meriles CA. Resonant Versus Nonresonant Spin Readout of a Nitrogen-Vacancy Center in Diamond under Cryogenic Conditions. PHYSICAL REVIEW LETTERS 2023; 131:236901. [PMID: 38134790 DOI: 10.1103/physrevlett.131.236901] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/11/2023] [Accepted: 10/23/2023] [Indexed: 12/24/2023]
Abstract
The last decade has seen an explosive growth in the use of color centers for metrology applications, the paradigm example arguably being the nitrogen-vacancy (NV) center in diamond. Here, we focus on the regime of cryogenic temperatures and examine the impact of spin-selective, narrow-band laser excitation on NV readout. Specifically, we demonstrate a more than fourfold improvement in sensitivity compared to that possible with nonresonant (green) illumination, largely due to a boost in readout contrast and integrated photon count. We also leverage nuclear spin relaxation under resonant excitation to polarize the ^{14}N host, which we then prove beneficial for spin magnetometry. These results open opportunities in the application of NV sensing to the investigation of condensed matter systems, particularly those exhibiting superconducting, magnetic, or topological phases selectively present at low temperatures.
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Affiliation(s)
- Richard Monge
- Department of Physics, CUNY-City College of New York, New York, New York 10031, USA
- CUNY-Graduate Center, New York, New York 10016, USA
| | - Tom Delord
- Department of Physics, CUNY-City College of New York, New York, New York 10031, USA
| | - Gergő Thiering
- HUN-REN Wigner Research Centre for Physics, P.O. Box 49, H-1525 Budapest, Hungary
| | - Ádám Gali
- HUN-REN Wigner Research Centre for Physics, P.O. Box 49, H-1525 Budapest, Hungary
- Department of Atomic Physics, Institute of Physics, Budapest University of Technology and Economics, Műegyetem rakpart 3., H-1111 Budapest, Hungary
| | - Carlos A Meriles
- Department of Physics, CUNY-City College of New York, New York, New York 10031, USA
- CUNY-Graduate Center, New York, New York 10016, USA
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3
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Ren ZQ, Feng CR, Xiang ZL. Deterministic generation of entanglement states between Silicon-Vacancy centers via acoustic modes. OPTICS EXPRESS 2022; 30:41685-41697. [PMID: 36366639 DOI: 10.1364/oe.468293] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/20/2022] [Accepted: 10/11/2022] [Indexed: 06/16/2023]
Abstract
We propose a scheme to entangle Silicon-Vacancy (SiV) centers embedded in a diamond acoustic waveguide. These SiV centers interact with acoustic modes of the waveguide via strain-induced coupling. Through Morris-Shore transformation, the Hilbert space of this hybrid quantum system can be factorized into a closed subspace in which we can deterministically realize the symmetrical Dicke states between distant SiV centers with high fidelity. In addition, the generation of entangled Dicke states can be controlled by manipulating the strength and frequency of the driving field applied on SiV centers. This protocol provides a promising way to prepare multipartite entanglement in spin-phonon hybrid systems and could have broad applications for future quantum technologies.
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4
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Fan Y, Song Y, Xu Z, Wu J, Zhu R, Li Q, Fang F. Numerical study of silicon vacancy color centers in silicon carbide by helium ion implantation and subsequent annealing. NANOTECHNOLOGY 2021; 33:125701. [PMID: 34875640 DOI: 10.1088/1361-6528/ac40c1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/20/2021] [Accepted: 12/07/2021] [Indexed: 06/13/2023]
Abstract
Molecular dynamics simulation is adopted to discover the formation mechanism of silicon vacancy color center and to study the damage evolution in 4H-SiC during helium ion implantation with different annealing temperatures. The number and distribution of silicon vacancy color centers during He ion implantation can be more accurately simulated by introducing the ionization energy loss during implantation. A new method for numerical statistic of silicon vacancy color centers is proposed, which takes into account the structure around the color centers and makes statistical results more accurate than the Wigner-Seitz defect analysis method. Meanwhile, the photoluminescence spectra of silicon vacancy color centers at different helium ion doses are characterized to verify the correctness of the numerical analysis. The new silicon vacancy color center identification method can help predicting the optimal annealing temperature for silicon vacancy color centers, and provide guidance for subsequent color center annealing experiments.
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Affiliation(s)
- Yexin Fan
- State Key Laboratory of Precision Measuring Technology & Instruments, Laboratory of Micro/Nano Manufacturing Technology, Tianjin University, Tianjin 300072, People's Republic of China
| | - Ying Song
- State Key Laboratory of Precision Measuring Technology & Instruments, Laboratory of Micro/Nano Manufacturing Technology, Tianjin University, Tianjin 300072, People's Republic of China
| | - Zongwei Xu
- State Key Laboratory of Precision Measuring Technology & Instruments, Laboratory of Micro/Nano Manufacturing Technology, Tianjin University, Tianjin 300072, People's Republic of China
| | - Jintong Wu
- State Key Laboratory of Precision Measuring Technology & Instruments, Laboratory of Micro/Nano Manufacturing Technology, Tianjin University, Tianjin 300072, People's Republic of China
| | - Rui Zhu
- State Key Laboratory for Mesoscopic Physics and Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, People's Republic of China
| | - Qiang Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, People's Republic of China
| | - Fengzhou Fang
- State Key Laboratory of Precision Measuring Technology & Instruments, Laboratory of Micro/Nano Manufacturing Technology, Tianjin University, Tianjin 300072, People's Republic of China
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5
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Hernández-Mínguez A, Poshakinskiy AV, Hollenbach M, Santos PV, Astakhov GV. Acoustically induced coherent spin trapping. SCIENCE ADVANCES 2021; 7:eabj5030. [PMID: 34714672 PMCID: PMC8555898 DOI: 10.1126/sciadv.abj5030] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/20/2021] [Accepted: 09/10/2021] [Indexed: 06/13/2023]
Abstract
Spin centers are promising qubits for quantum technologies. Here, we show that the acoustic manipulation of spin qubits in their electronic excited state provides an approach for coherent spin control inaccessible so far. We demonstrate a giant interaction between the strain field of a surface acoustic wave (SAW) and the excited-state spin of silicon vacancies in silicon carbide, which is about two orders of magnitude stronger than in the ground state. The simultaneous spin driving in the ground and excited states with the same SAW leads to the trapping of the spin along a direction given by the frequency detuning from the corresponding spin resonances. The coherence of the spin-trapped states becomes only limited by relaxation processes intrinsic to the ground state. The coherent acoustic manipulation of spins in the ground and excited state provides new opportunities for efficient on-chip quantum information protocols and coherent sensing.
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Affiliation(s)
- Alberto Hernández-Mínguez
- Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, 10117 Berlin, Germany
| | | | - Michael Hollenbach
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany
- Technische Universität Dresden, 01062 Dresden, Germany
| | - Paulo V. Santos
- Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, 10117 Berlin, Germany
| | - Georgy V. Astakhov
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany
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6
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Gao X, Jiang B, Llacsahuanga Allcca AE, Shen K, Sadi MA, Solanki AB, Ju P, Xu Z, Upadhyaya P, Chen YP, Bhave SA, Li T. High-Contrast Plasmonic-Enhanced Shallow Spin Defects in Hexagonal Boron Nitride for Quantum Sensing. NANO LETTERS 2021; 21:7708-7714. [PMID: 34473524 DOI: 10.1021/acs.nanolett.1c02495] [Citation(s) in RCA: 39] [Impact Index Per Article: 13.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The recently discovered spin defects in hexagonal boron nitride (hBN), a layered van der Waals material, have great potential in quantum sensing. However, the photoluminescence and the contrast of the optically detected magnetic resonance (ODMR) of hBN spin defects are relatively low so far, which limits their sensitivity. Here we report a record-high ODMR contrast of 46% at room temperature and simultaneous enhancement of the photoluminescence of hBN spin defects by up to 17-fold by the surface plasmon of a gold film microwave waveguide. Our results are obtained with shallow boron vacancy spin defects in hBN nanosheets created by low-energy He+ ion implantation and a gold film microwave waveguide fabricated by photolithography. We also explore the effects of microwave and laser powers on the ODMR and improve the sensitivity of hBN spin defects for magnetic field detection. Our results support the promising potential of hBN spin defects for nanoscale quantum sensing.
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Affiliation(s)
- Xingyu Gao
- Department of Physics and Astronomy, Purdue University, West Lafayette, Indiana 47907, United States
| | - Boyang Jiang
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | | | - Kunhong Shen
- Department of Physics and Astronomy, Purdue University, West Lafayette, Indiana 47907, United States
| | - Mohammad A Sadi
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Abhishek B Solanki
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Peng Ju
- Department of Physics and Astronomy, Purdue University, West Lafayette, Indiana 47907, United States
| | - Zhujing Xu
- Department of Physics and Astronomy, Purdue University, West Lafayette, Indiana 47907, United States
| | - Pramey Upadhyaya
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Yong P Chen
- Department of Physics and Astronomy, Purdue University, West Lafayette, Indiana 47907, United States
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
- Purdue Quantum Science and Engineering Institute, Purdue University, West Lafayette, Indiana 47907, United States
| | - Sunil A Bhave
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
| | - Tongcang Li
- Department of Physics and Astronomy, Purdue University, West Lafayette, Indiana 47907, United States
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
- Purdue Quantum Science and Engineering Institute, Purdue University, West Lafayette, Indiana 47907, United States
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7
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Gottscholl A, Diez M, Soltamov V, Kasper C, Krauße D, Sperlich A, Kianinia M, Bradac C, Aharonovich I, Dyakonov V. Spin defects in hBN as promising temperature, pressure and magnetic field quantum sensors. Nat Commun 2021; 12:4480. [PMID: 34294695 PMCID: PMC8298442 DOI: 10.1038/s41467-021-24725-1] [Citation(s) in RCA: 56] [Impact Index Per Article: 18.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/24/2021] [Accepted: 06/29/2021] [Indexed: 11/09/2022] Open
Abstract
Spin defects in solid-state materials are strong candidate systems for quantum information technology and sensing applications. Here we explore in details the recently discovered negatively charged boron vacancies (VB-) in hexagonal boron nitride (hBN) and demonstrate their use as atomic scale sensors for temperature, magnetic fields and externally applied pressure. These applications are possible due to the high-spin triplet ground state and bright spin-dependent photoluminescence of the VB-. Specifically, we find that the frequency shift in optically detected magnetic resonance measurements is not only sensitive to static magnetic fields, but also to temperature and pressure changes which we relate to crystal lattice parameters. We show that spin-rich hBN films are potentially applicable as intrinsic sensors in heterostructures made of functionalized 2D materials.
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Affiliation(s)
- Andreas Gottscholl
- Experimental Physics 6 and Würzburg-Dresden Cluster of Excellence ct.qmat, Julius Maximilian University of Würzburg, Würzburg, Germany
| | - Matthias Diez
- Experimental Physics 6 and Würzburg-Dresden Cluster of Excellence ct.qmat, Julius Maximilian University of Würzburg, Würzburg, Germany
| | - Victor Soltamov
- Experimental Physics 6 and Würzburg-Dresden Cluster of Excellence ct.qmat, Julius Maximilian University of Würzburg, Würzburg, Germany
- Ioffe Institute, St. Petersburg, Russia
| | - Christian Kasper
- Experimental Physics 6 and Würzburg-Dresden Cluster of Excellence ct.qmat, Julius Maximilian University of Würzburg, Würzburg, Germany
| | - Dominik Krauße
- Experimental Physics 6 and Würzburg-Dresden Cluster of Excellence ct.qmat, Julius Maximilian University of Würzburg, Würzburg, Germany
| | - Andreas Sperlich
- Experimental Physics 6 and Würzburg-Dresden Cluster of Excellence ct.qmat, Julius Maximilian University of Würzburg, Würzburg, Germany
| | - Mehran Kianinia
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW, Australia
- Centre of Excellence for Transformative Meta-Optical Systems, University of Technology Sydney, Ultimo, NSW, Australia
| | - Carlo Bradac
- Department of Physics & Astronomy, Trent University, Peterborough, ON, Canada
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW, Australia
- Centre of Excellence for Transformative Meta-Optical Systems, University of Technology Sydney, Ultimo, NSW, Australia
| | - Vladimir Dyakonov
- Experimental Physics 6 and Würzburg-Dresden Cluster of Excellence ct.qmat, Julius Maximilian University of Würzburg, Würzburg, Germany.
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8
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Nagasawa F, Takamura M, Sekiguchi H, Miyamae Y, Oku Y, Nakahara K. Prominent luminescence of silicon-vacancy defects created in bulk silicon carbide p-n junction diodes. Sci Rep 2021; 11:1497. [PMID: 33452427 PMCID: PMC7810994 DOI: 10.1038/s41598-021-81116-8] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/24/2020] [Accepted: 12/31/2020] [Indexed: 11/29/2022] Open
Abstract
We investigate fluorescent defect centers in 4H silicon carbide p–n junction diodes fabricated via aluminum-ion implantation into an n-type bulk substrate without the use of an epitaxial growth process. At room temperature, electron-irradiated p–n junction diodes exhibit electroluminescence originating from silicon-vacancy defects. For a diode exposed to an electron dose of \documentclass[12pt]{minimal}
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\begin{document}$$800\,{{\mathrm{keV}}}$$\end{document}800keV, the electroluminescence intensity of these defects is most prominent within a wavelength range of 400–\documentclass[12pt]{minimal}
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\begin{document}$${{\mathrm{D}}}_1$$\end{document}D1 emission was sufficiently suppressed in the electroluminescence spectra of all the fabricated diodes, while it was detected in the photoluminescence measurements. The photoluminescence spectra also displayed emission lines from silicon-vacancy defects.
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Affiliation(s)
- Fumiya Nagasawa
- Rohm Research and Development Center, ROHM Co., Ltd., Kyoto, Japan.
| | - Makoto Takamura
- Rohm Research and Development Center, ROHM Co., Ltd., Kyoto, Japan
| | | | | | - Yoshiaki Oku
- Rohm Research and Development Center, ROHM Co., Ltd., Kyoto, Japan
| | - Ken Nakahara
- Rohm Research and Development Center, ROHM Co., Ltd., Kyoto, Japan
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9
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Hernández-Mínguez A, Poshakinskiy AV, Hollenbach M, Santos PV, Astakhov GV. Anisotropic Spin-Acoustic Resonance in Silicon Carbide at Room Temperature. PHYSICAL REVIEW LETTERS 2020; 125:107702. [PMID: 32955339 DOI: 10.1103/physrevlett.125.107702] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/02/2020] [Revised: 06/30/2020] [Accepted: 08/06/2020] [Indexed: 06/11/2023]
Abstract
We report on acoustically driven spin resonances in atomic-scale centers in silicon carbide at room temperature. Specifically, we use a surface acoustic wave cavity to selectively address spin transitions with magnetic quantum number differences of ±1 and ±2 in the absence of external microwave electromagnetic fields. These spin-acoustic resonances reveal a nontrivial dependence on the static magnetic field orientation, which is attributed to the intrinsic symmetry of the acoustic fields combined with the peculiar properties of a half-integer spin system. We develop a microscopic model of the spin-acoustic interaction, which describes our experimental data without fitting parameters. Furthermore, we predict that traveling surface waves lead to a chiral spin-acoustic resonance that changes upon magnetic field inversion. These results establish silicon carbide as a highly promising hybrid platform for on-chip spin-optomechanical quantum control enabling engineered interactions at room temperature.
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Affiliation(s)
- A Hernández-Mínguez
- Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, 10117 Berlin, Germany
| | - A V Poshakinskiy
- Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia
| | - M Hollenbach
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany
- Technische Universität Dresden, 01062 Dresden, Germany
| | - P V Santos
- Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, 10117 Berlin, Germany
| | - G V Astakhov
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany
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10
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Stabilization of point-defect spin qubits by quantum wells. Nat Commun 2019; 10:5607. [PMID: 31811137 PMCID: PMC6898666 DOI: 10.1038/s41467-019-13495-6] [Citation(s) in RCA: 32] [Impact Index Per Article: 6.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/26/2018] [Accepted: 11/12/2019] [Indexed: 11/15/2022] Open
Abstract
Defect-based quantum systems in wide bandgap semiconductors are strong candidates for scalable quantum-information technologies. However, these systems are often complicated by charge-state instabilities and interference by phonons, which can diminish spin-initialization fidelities and limit room-temperature operation. Here, we identify a pathway around these drawbacks by showing that an engineered quantum well can stabilize the charge state of a qubit. Using density-functional theory and experimental synchrotron X-ray diffraction studies, we construct a model for previously unattributed point defect centers in silicon carbide as a near-stacking fault axial divacancy and show how this model explains these defects’ robustness against photoionization and room temperature stability. These results provide a materials-based solution to the optical instability of color centers in semiconductors, paving the way for the development of robust single-photon sources and spin qubits. Certain point defects in crystals can be used as optically addressable quantum bits, much like atoms trapped in vacuum. Ivády et al. show that embedding such artificial atoms in stacking faults can actually improve their optical properties, making them function even more like true atoms.
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11
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Son NT, Stenberg P, Jokubavicius V, Ohshima T, Ul Hassan J, Ivanov IG. Ligand hyperfine interactions at silicon vacancies in 4H-SiC. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2019; 31:195501. [PMID: 30763923 DOI: 10.1088/1361-648x/ab072b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
The negative silicon vacancy ([Formula: see text]) in SiC has recently emerged as a promising defect for quantum communication and room-temperature quantum sensing. However, its electronic structure is still not well characterized. While the isolated Si vacancy is expected to give rise to only two paramagnetic centers corresponding to two inequivalent lattice sites in 4H-SiC, there have been five electron paramagnetic resonance (EPR) centers assigned to [Formula: see text] in the past: the so-called isolated no-zero-field splitting (ZFS) [Formula: see text] center and another four axial configurations with small ZFS: T V1a, T V2a, T V1b, and T V2b. Due to overlapping with 29Si hyperfine (hf) structures in EPR spectra of natural 4H-SiC, hf parameters of T V1a have not been determined. Using isotopically enriched 4H-28SiC, we overcome the problems of signal overlapping and observe hf parameters of nearest C neighbors for all three components of the S = 3/2 T V1a and T V2a centers. The obtained EPR data support the conclusion that only T V1a and T V2a are related to [Formula: see text] and the two configurations of the so-called isolated no-ZFS [Formula: see text] center, [Formula: see text] (I) and [Formula: see text] (II), are actually the central lines corresponding to the transition |-1/2〉 ↔ |+1/2〉 of the T V2a and T V1a centers, respectively.
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Affiliation(s)
- Nguyen Tien Son
- Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping, Sweden
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12
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Soltamov VA, Kasper C, Poshakinskiy AV, Anisimov AN, Mokhov EN, Sperlich A, Tarasenko SA, Baranov PG, Astakhov GV, Dyakonov V. Excitation and coherent control of spin qudit modes in silicon carbide at room temperature. Nat Commun 2019; 10:1678. [PMID: 30975985 PMCID: PMC6459825 DOI: 10.1038/s41467-019-09429-x] [Citation(s) in RCA: 17] [Impact Index Per Article: 3.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/14/2018] [Accepted: 03/06/2019] [Indexed: 12/01/2022] Open
Abstract
One of the challenges in the field of quantum sensing and information processing is to selectively address and coherently manipulate highly homogeneous qubits subject to external perturbations. Here, we present room-temperature coherent control of high-dimensional quantum bits, the so-called qudits, associated with vacancy-related spins in silicon carbide enriched with nuclear spin-free isotopes. In addition to the excitation of a spectrally narrow qudit mode at the pump frequency, several other modes are excited in the electron spin resonance spectra whose relative positions depend on the external magnetic field. We develop a theory of multipole spin dynamics and demonstrate selective quantum control of homogeneous spin packets with sub-MHz spectral resolution. Furthermore, we perform two-frequency Ramsey interferometry to demonstrate absolute dc magnetometry, which is immune to thermal noise and strain inhomogeneity. High-dimensional quantum bits advance the application of quantum sensing and information processing technologies but suffer from the low spectral selectivity and working temperature. Here the authors present the selective excitation and control of spin qudits modes based on an ensemble of silicon vacancy defects in silicon carbide at room temperature.
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Affiliation(s)
- V A Soltamov
- Ioffe Institute, St. Petersburg, 194021, Russia.,Experimental Physics VI, Julius-Maximilian University of Würzburg, Würzburg, 97074, Germany
| | - C Kasper
- Experimental Physics VI, Julius-Maximilian University of Würzburg, Würzburg, 97074, Germany
| | | | | | - E N Mokhov
- Ioffe Institute, St. Petersburg, 194021, Russia.,National Research University of Information Technologies, Mechanics and Optics, St. Petersburg, 197101, Russia
| | - A Sperlich
- Experimental Physics VI, Julius-Maximilian University of Würzburg, Würzburg, 97074, Germany
| | | | - P G Baranov
- Ioffe Institute, St. Petersburg, 194021, Russia.,Peter the Great St. Petersburg Polytechnic University, St. Petersburg, 195251, Russia
| | - G V Astakhov
- Ioffe Institute, St. Petersburg, 194021, Russia. .,Experimental Physics VI, Julius-Maximilian University of Würzburg, Würzburg, 97074, Germany.
| | - V Dyakonov
- Experimental Physics VI, Julius-Maximilian University of Würzburg, Würzburg, 97074, Germany.
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13
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Petrenko TL, Bryksa VP. Comparison of nitrogen-vacancy complexes in diamond and cubic SiC: dose dependencies and spin-Hamiltonian parameters. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2017; 29:325506. [PMID: 28541927 DOI: 10.1088/1361-648x/aa7507] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
At present the nitrogen-vacancy (NV) complex in diamond is the most promising defect for application in the area of quantum computing. This provides a stimulus for an extensive search of other defects in semiconductors with similar properties. Recently it was shown that the NCVSi defect complex in SiC is perspectively appropriate for this goal as well. In the present work we perform comparative ab initio studies of NV complexes in diamond and 3C-SiC. We focus both on radiospectroscopic characterization of these defects and on the calculation of the equilibrium concentration of complexes in irradiated crystals. In particular a full set of spin-Hamiltonian parameters including g-tensors, hyperfine tensors and the spin-spin part of zero-field splitting constant Dss were calculated for both negative and neutral charge states as well as for excited quartet states of neutral complexes. Comparison of calculated values with the available experimental data and results of other calculations show good agreement, especially in the case when hybrid and meta-hybrid functionals were used. This makes the unambiguous identification of negative NV complexes in both materials possible. Our calculations reveal that the ground states of neutral complexes are a difficult case for both DFT calculations and experimental observations. This is caused by multi-determinantal behavior of wave function for such complexes, which leads to a large amount of spin contamination and to the broken symmetry solution which appeared for single Slater determinant DFT calculations. Based on the calculated minimum of free energy of neutral and negative complexes in SiC and diamond we obtained the equilibrium concentrations of these complexes depending on the vacancy concentration produced by irradiation. We show that in some dose regions both negative and neutral complexes coexist, while in other regions only one charge state prevails. Comparison of the calculated and experimental dose dependencies for diamond shows good qualitative agreement.
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Affiliation(s)
- T L Petrenko
- Institute of Semiconductor Physics, NASU, 45 Prospect Nauky, 03028 Kyiv, Ukraine
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14
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Libisch F, Marsman M, Burgdörfer J, Kresse G. Embedding for bulk systems using localized atomic orbitals. J Chem Phys 2017; 147:034110. [DOI: 10.1063/1.4993795] [Citation(s) in RCA: 17] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
Affiliation(s)
- F. Libisch
- Institute for Theoretical Physics, Vienna University of Technology, Wiedner Hauptstraße 8-10/136, A-1040 Vienna, Austria, EU
| | - M. Marsman
- Faculty of Physics and Center for Computational Materials Science, University of Vienna, Sensengasse 8/12, A-1090 Vienna, Austria, EU
| | - J. Burgdörfer
- Institute for Theoretical Physics, Vienna University of Technology, Wiedner Hauptstraße 8-10/136, A-1040 Vienna, Austria, EU
| | - G. Kresse
- Faculty of Physics and Center for Computational Materials Science, University of Vienna, Sensengasse 8/12, A-1090 Vienna, Austria, EU
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15
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Kraus H, Simin D, Kasper C, Suda Y, Kawabata S, Kada W, Honda T, Hijikata Y, Ohshima T, Dyakonov V, Astakhov GV. Three-Dimensional Proton Beam Writing of Optically Active Coherent Vacancy Spins in Silicon Carbide. NANO LETTERS 2017; 17:2865-2870. [PMID: 28350468 DOI: 10.1021/acs.nanolett.6b05395] [Citation(s) in RCA: 23] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Constructing quantum devices comprises various challenging tasks, especially when concerning their nanoscale geometry. For quantum color centers, the traditional approach is to fabricate the device structure after the nondeterministic placement of the centers. Reversing this approach, we present the controlled generation of quantum centers in silicon carbide (SiC) by focused proton beam in a noncomplex manner without need for pre- or postirradiation treatment. The generation depth and resolution can be predicted by matching the proton energy to the material's stopping power, and the amount of quantum centers at one specific sample volume is tunable from ensembles of millions to discernible single photon emitters. We identify the generated centers as silicon vacancies through their characteristic magnetic resonance signatures and demonstrate that they possess a long spin-echo coherence time of 42 ± 20 μs at room temperature. Our approach hence enables the fabrication of quantum hybrid nanodevices based on SiC platform, where spin centers are integrated into p-i-n diodes, photonic cavities, and mechanical resonators.
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Affiliation(s)
- H Kraus
- Experimental Physics VI, Julius Maximilian University of Würzburg , 97074 Würzburg, Germany
- National Institutes for Quantum and Radiological Science and Technology (QST) , Takasaki, Gunma 370-1292, Japan
| | - D Simin
- Experimental Physics VI, Julius Maximilian University of Würzburg , 97074 Würzburg, Germany
| | - C Kasper
- Experimental Physics VI, Julius Maximilian University of Würzburg , 97074 Würzburg, Germany
| | - Y Suda
- Faculty of Science and Technology, Gunma University , Kiryu, Gunma 376-8515, Japan
| | - S Kawabata
- Faculty of Science and Technology, Gunma University , Kiryu, Gunma 376-8515, Japan
| | - W Kada
- Faculty of Science and Technology, Gunma University , Kiryu, Gunma 376-8515, Japan
| | - T Honda
- National Institutes for Quantum and Radiological Science and Technology (QST) , Takasaki, Gunma 370-1292, Japan
- Graduate School of Science and Engineering, Saitama University , Saitama 338-8570, Japan
| | - Y Hijikata
- Graduate School of Science and Engineering, Saitama University , Saitama 338-8570, Japan
| | - T Ohshima
- National Institutes for Quantum and Radiological Science and Technology (QST) , Takasaki, Gunma 370-1292, Japan
| | - V Dyakonov
- Experimental Physics VI, Julius Maximilian University of Würzburg , 97074 Würzburg, Germany
- Bavarian Center for Applied Energy Research (ZAE Bayern) , 97074 Würzburg, Germany
| | - G V Astakhov
- Experimental Physics VI, Julius Maximilian University of Würzburg , 97074 Würzburg, Germany
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16
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Bracher DO, Zhang X, Hu EL. Selective Purcell enhancement of two closely linked zero-phonon transitions of a silicon carbide color center. Proc Natl Acad Sci U S A 2017; 114:4060-4065. [PMID: 28373543 PMCID: PMC5402470 DOI: 10.1073/pnas.1704219114] [Citation(s) in RCA: 20] [Impact Index Per Article: 2.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/18/2022] Open
Abstract
Point defects in silicon carbide are rapidly becoming a platform of great interest for single-photon generation, quantum sensing, and quantum information science. Photonic crystal cavities (PCCs) can serve as an efficient light-matter interface both to augment the defect emission and to aid in studying the defects' properties. In this work, we fabricate 1D nanobeam PCCs in 4H-silicon carbide with embedded silicon vacancy centers. These cavities are used to achieve Purcell enhancement of two closely spaced defect zero-phonon lines (ZPL). Enhancements of >80-fold are measured using multiple techniques. Additionally, the nature of the cavity coupling to the different ZPLs is examined.
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Affiliation(s)
- David O Bracher
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138;
- Department of Physics, Harvard University, Cambridge, MA 02138
| | - Xingyu Zhang
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138
| | - Evelyn L Hu
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138;
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17
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Economou SE, Dev P. Spin-photon entanglement interfaces in silicon carbide defect centers. NANOTECHNOLOGY 2016; 27:504001. [PMID: 27861163 DOI: 10.1088/0957-4484/27/50/504001] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/24/2023]
Abstract
Optically active spins in solid-state systems can be engineered to emit photons that are entangled with the spin in the solid. This allows for applications such as quantum communications, quantum key distribution, and distributed quantum computing. Recently, there has been a strong interest in silicon carbide defects, as they emit very close to the telecommunication wavelength, making them excellent candidates for long range quantum communications. In this work we develop explicit schemes for spin-photon entanglement in several SiC defects: the silicon monovacancy, the silicon divacancy, and the NV center in SiC. Distinct approaches are given for (i) single-photon and spin entanglement and (ii) the generation of long strings of entangled photons. The latter are known as cluster states and comprise a resource for measurement-based quantum information processing.
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18
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Ivády V, Klimov PV, Miao KC, Falk AL, Christle DJ, Szász K, Abrikosov IA, Awschalom DD, Gali A. High-Fidelity Bidirectional Nuclear Qubit Initialization in SiC. PHYSICAL REVIEW LETTERS 2016; 117:220503. [PMID: 27925750 DOI: 10.1103/physrevlett.117.220503] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/02/2016] [Indexed: 05/03/2023]
Abstract
Dynamic nuclear polarization (DNP) is an attractive method for initializing nuclear spins that are strongly coupled to optically active electron spins because it functions at room temperature and does not require strong magnetic fields. In this Letter, we theoretically demonstrate that DNP, with near-unity polarization efficiency, can be generally realized in weakly coupled electron spin-nuclear spin systems. Furthermore, we theoretically and experimentally show that the nuclear spin polarization can be reversed by magnetic field variations as small as 0.8 Gauss. This mechanism offers new avenues for DNP-based sensors and radio-frequency free control of nuclear qubits.
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Affiliation(s)
- Viktor Ivády
- Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping, Sweden
- Wigner Research Centre for Physics, Hungarian Academy of Sciences, PO Box 49, H-1525 Budapest, Hungary
| | - Paul V Klimov
- Institute for Molecular Engineering, University of Chicago, Chicago, Illinois 60637, USA
| | - Kevin C Miao
- Institute for Molecular Engineering, University of Chicago, Chicago, Illinois 60637, USA
| | - Abram L Falk
- Institute for Molecular Engineering, University of Chicago, Chicago, Illinois 60637, USA
- IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, USA
| | - David J Christle
- Institute for Molecular Engineering, University of Chicago, Chicago, Illinois 60637, USA
| | - Krisztián Szász
- Wigner Research Centre for Physics, Hungarian Academy of Sciences, PO Box 49, H-1525 Budapest, Hungary
| | - Igor A Abrikosov
- Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping, Sweden
- Materials Modeling and Development Laboratory, National University of Science and Technology 'MISIS', 119049 Moscow, Russia
| | - David D Awschalom
- Institute for Molecular Engineering, University of Chicago, Chicago, Illinois 60637, USA
| | - Adam Gali
- Wigner Research Centre for Physics, Hungarian Academy of Sciences, PO Box 49, H-1525 Budapest, Hungary
- Department of Atomic Physics, Budapest University of Technology and Economics, Budafoki út 8., H-1111 Budapest, Hungary
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19
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Quantum decoherence dynamics of divacancy spins in silicon carbide. Nat Commun 2016; 7:12935. [PMID: 27679936 PMCID: PMC5056425 DOI: 10.1038/ncomms12935] [Citation(s) in RCA: 40] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/27/2016] [Accepted: 08/17/2016] [Indexed: 11/08/2022] Open
Abstract
Long coherence times are key to the performance of quantum bits (qubits). Here, we experimentally and theoretically show that the Hahn-echo coherence time of electron spins associated with divacancy defects in 4H-SiC reaches 1.3 ms, one of the longest Hahn-echo coherence times of an electron spin in a naturally isotopic crystal. Using a first-principles microscopic quantum-bath model, we find that two factors determine the unusually robust coherence. First, in the presence of moderate magnetic fields (30 mT and above), the 29Si and 13C paramagnetic nuclear spin baths are decoupled. In addition, because SiC is a binary crystal, homo-nuclear spin pairs are both diluted and forbidden from forming strongly coupled, nearest-neighbour spin pairs. Longer neighbour distances result in fewer nuclear spin flip-flops, a less fluctuating intra-crystalline magnetic environment, and thus a longer coherence time. Our results point to polyatomic crystals as promising hosts for coherent qubits in the solid state.
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20
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Anisimov AN, Simin D, Soltamov VA, Lebedev SP, Baranov PG, Astakhov GV, Dyakonov V. Optical thermometry based on level anticrossing in silicon carbide. Sci Rep 2016; 6:33301. [PMID: 27624819 PMCID: PMC5022017 DOI: 10.1038/srep33301] [Citation(s) in RCA: 18] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/06/2016] [Accepted: 08/24/2016] [Indexed: 12/03/2022] Open
Abstract
We report a giant thermal shift of 2.1 MHz/K related to the excited-state zero-field splitting in the silicon vacancy centers in 4H silicon carbide. It is obtained from the indirect observation of the optically detected magnetic resonance in the excited state using the ground state as an ancilla. Alternatively, relative variations of the zero-field splitting for small temperature differences can be detected without application of radiofrequency fields, by simply monitoring the photoluminescence intensity in the vicinity of the level anticrossing. This effect results in an all-optical thermometry technique with temperature sensitivity of 100 mK/Hz1/2 for a detection volume of approximately 10−6 mm3. In contrast, the zero-field splitting in the ground state does not reveal detectable temperature shift. Using these properties, an integrated magnetic field and temperature sensor can be implemented on the same center.
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Affiliation(s)
- A N Anisimov
- Ioffe Physical-Technical Institute, 194021 St. Petersburg, Russia
| | - D Simin
- Experimental Physics VI, Julius-Maximilian University of Würzburg, 97074 Würzburg, Germany
| | - V A Soltamov
- Ioffe Physical-Technical Institute, 194021 St. Petersburg, Russia
| | - S P Lebedev
- Ioffe Physical-Technical Institute, 194021 St. Petersburg, Russia.,St. Petersburg National Research University of Information Technologies, Mechanics and Optics, 197101, St. Petersburg, Russia
| | - P G Baranov
- Ioffe Physical-Technical Institute, 194021 St. Petersburg, Russia
| | - G V Astakhov
- Experimental Physics VI, Julius-Maximilian University of Würzburg, 97074 Würzburg, Germany
| | - V Dyakonov
- Experimental Physics VI, Julius-Maximilian University of Würzburg, 97074 Würzburg, Germany.,Bavarian Center for Applied Energy Research (ZAE Bayern), 97074 Würzburg, Germany
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21
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Optical patterning of trapped charge in nitrogen-doped diamond. Nat Commun 2016; 7:12660. [PMID: 27573190 PMCID: PMC5013603 DOI: 10.1038/ncomms12660] [Citation(s) in RCA: 20] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/23/2015] [Accepted: 07/21/2016] [Indexed: 11/09/2022] Open
Abstract
The nitrogen-vacancy (NV) centre in diamond is emerging as a promising platform for solid-state quantum information processing and nanoscale metrology. Of interest in these applications is the manipulation of the NV charge, which can be attained by optical excitation. Here, we use two-colour optical microscopy to investigate the dynamics of NV photo-ionization, charge diffusion and trapping in type-1b diamond. We combine fixed-point laser excitation and scanning fluorescence imaging to locally alter the concentration of negatively charged NVs, and to subsequently probe the corresponding redistribution of charge. We uncover the formation of spatial patterns of trapped charge, which we qualitatively reproduce via a model of the interplay between photo-excited carriers and atomic defects. Further, by using the NV as a probe, we map the relative fraction of positively charged nitrogen on localized optical excitation. These observations may prove important to transporting quantum information between NVs or to developing three-dimensional, charge-based memories. Manipulating nitrogen vacancies in nitrogen-doped diamond is important for quantum information processing. Here the authors use a two-colour excitation to redistribute the localized trapping charges in type-1b diamonds.
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22
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Fuchs F, Stender B, Trupke M, Simin D, Pflaum J, Dyakonov V, Astakhov GV. Engineering near-infrared single-photon emitters with optically active spins in ultrapure silicon carbide. Nat Commun 2015; 6:7578. [PMID: 26151881 DOI: 10.1038/ncomms8578] [Citation(s) in RCA: 51] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/04/2014] [Accepted: 05/19/2015] [Indexed: 12/18/2022] Open
Abstract
Vacancy-related centres in silicon carbide are attracting growing attention because of their appealing optical and spin properties. These atomic-scale defects can be created using electron or neutron irradiation; however, their precise engineering has not been demonstrated yet. Here, silicon vacancies are generated in a nuclear reactor and their density is controlled over eight orders of magnitude within an accuracy down to a single vacancy level. An isolated silicon vacancy serves as a near-infrared photostable single-photon emitter, operating even at room temperature. The vacancy spins can be manipulated using an optically detected magnetic resonance technique, and we determine the transition rates and absorption cross-section, describing the intensity-dependent photophysics of these emitters. The on-demand engineering of optically active spins in technologically friendly materials is a crucial step toward implementation of both maser amplifiers, requiring high-density spin ensembles, and qubits based on single spins.
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Affiliation(s)
- F Fuchs
- Experimental Physics VI, Julius-Maximilian University of Würzburg, Würzburg 97074, Germany
| | - B Stender
- Experimental Physics VI, Julius-Maximilian University of Würzburg, Würzburg 97074, Germany
| | - M Trupke
- Vienna Center for Quantum Science and Technology, Atominstitut, TU Wien, Wien 1020, Austria
| | - D Simin
- Experimental Physics VI, Julius-Maximilian University of Würzburg, Würzburg 97074, Germany
| | - J Pflaum
- Experimental Physics VI, Julius-Maximilian University of Würzburg, Würzburg 97074, Germany.,Bavarian Center for Applied Energy Research (ZAE Bayern), Würzburg 97074, Germany
| | - V Dyakonov
- Experimental Physics VI, Julius-Maximilian University of Würzburg, Würzburg 97074, Germany.,Bavarian Center for Applied Energy Research (ZAE Bayern), Würzburg 97074, Germany
| | - G V Astakhov
- Experimental Physics VI, Julius-Maximilian University of Würzburg, Würzburg 97074, Germany
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23
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Falk AL, Klimov PV, Ivády V, Szász K, Christle DJ, Koehl WF, Gali Á, Awschalom DD. Optical Polarization of Nuclear Spins in Silicon Carbide. PHYSICAL REVIEW LETTERS 2015. [PMID: 26197014 DOI: 10.1103/physrevlett.114.247603] [Citation(s) in RCA: 38] [Impact Index Per Article: 4.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/03/2023]
Affiliation(s)
- Abram L Falk
- Institute for Molecular Engineering, University of Chicago, Chicago, Illinois 60637, USA
- IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, USA
| | - Paul V Klimov
- Institute for Molecular Engineering, University of Chicago, Chicago, Illinois 60637, USA
- Department of Physics, University of California, Santa Barbara, Santa Barbara, California 93106, USA
| | - Viktor Ivády
- Institute for Solid State Physics and Optics, Wigner Research Centre for Physics, Hungarian Academy of Sciences, H-1525 Budapest, Hungary
- Department of Physics, Chemistry, and Biology, Linköping University, SE-581 83 Linköping, Sweden
| | - Krisztián Szász
- Institute for Solid State Physics and Optics, Wigner Research Centre for Physics, Hungarian Academy of Sciences, H-1525 Budapest, Hungary
- Institute of Physics, Loránd Eötvös University, H-1117 Budapest, Hungary
| | - David J Christle
- Institute for Molecular Engineering, University of Chicago, Chicago, Illinois 60637, USA
- Department of Physics, University of California, Santa Barbara, Santa Barbara, California 93106, USA
| | - William F Koehl
- Institute for Molecular Engineering, University of Chicago, Chicago, Illinois 60637, USA
| | - Ádám Gali
- Institute for Solid State Physics and Optics, Wigner Research Centre for Physics, Hungarian Academy of Sciences, H-1525 Budapest, Hungary
- Department of Atomic Physics, Budapest University of Technology and Economics, H-1111 Budapest, Hungary
| | - David D Awschalom
- Institute for Molecular Engineering, University of Chicago, Chicago, Illinois 60637, USA
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24
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Widmann M, Lee SY, Rendler T, Son NT, Fedder H, Paik S, Yang LP, Zhao N, Yang S, Booker I, Denisenko A, Jamali M, Momenzadeh SA, Gerhardt I, Ohshima T, Gali A, Janzén E, Wrachtrup J. Coherent control of single spins in silicon carbide at room temperature. NATURE MATERIALS 2015; 14:164-8. [PMID: 25437256 DOI: 10.1038/nmat4145] [Citation(s) in RCA: 148] [Impact Index Per Article: 16.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/29/2014] [Accepted: 10/20/2014] [Indexed: 05/24/2023]
Abstract
Spins in solids are cornerstone elements of quantum spintronics. Leading contenders such as defects in diamond or individual phosphorus dopants in silicon have shown spectacular progress, but either lack established nanotechnology or an efficient spin/photon interface. Silicon carbide (SiC) combines the strength of both systems: it has a large bandgap with deep defects and benefits from mature fabrication techniques. Here, we report the characterization of photoluminescence and optical spin polarization from single silicon vacancies in SiC, and demonstrate that single spins can be addressed at room temperature. We show coherent control of a single defect spin and find long spin coherence times under ambient conditions. Our study provides evidence that SiC is a promising system for atomic-scale spintronics and quantum technology.
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Affiliation(s)
- Matthias Widmann
- 3rd Institute of Physics and Research Center SCOPE, University of Stuttgart, Pfaffenwaldring 57, 70569 Stuttgart, Germany
| | - Sang-Yun Lee
- 3rd Institute of Physics and Research Center SCOPE, University of Stuttgart, Pfaffenwaldring 57, 70569 Stuttgart, Germany
| | - Torsten Rendler
- 3rd Institute of Physics and Research Center SCOPE, University of Stuttgart, Pfaffenwaldring 57, 70569 Stuttgart, Germany
| | - Nguyen Tien Son
- Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping, Sweden
| | - Helmut Fedder
- 3rd Institute of Physics and Research Center SCOPE, University of Stuttgart, Pfaffenwaldring 57, 70569 Stuttgart, Germany
| | - Seoyoung Paik
- 3rd Institute of Physics and Research Center SCOPE, University of Stuttgart, Pfaffenwaldring 57, 70569 Stuttgart, Germany
| | - Li-Ping Yang
- Beijing Computational Science Research Center, Beijing 100084, China
| | - Nan Zhao
- Beijing Computational Science Research Center, Beijing 100084, China
| | - Sen Yang
- 3rd Institute of Physics and Research Center SCOPE, University of Stuttgart, Pfaffenwaldring 57, 70569 Stuttgart, Germany
| | - Ian Booker
- Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping, Sweden
| | - Andrej Denisenko
- 3rd Institute of Physics and Research Center SCOPE, University of Stuttgart, Pfaffenwaldring 57, 70569 Stuttgart, Germany
| | - Mohammad Jamali
- 3rd Institute of Physics and Research Center SCOPE, University of Stuttgart, Pfaffenwaldring 57, 70569 Stuttgart, Germany
| | - S Ali Momenzadeh
- 3rd Institute of Physics and Research Center SCOPE, University of Stuttgart, Pfaffenwaldring 57, 70569 Stuttgart, Germany
| | - Ilja Gerhardt
- 3rd Institute of Physics and Research Center SCOPE, University of Stuttgart, Pfaffenwaldring 57, 70569 Stuttgart, Germany
| | | | - Adam Gali
- 1] Wigner Research Centre for Physics, Hungarian Academy of Sciences, PO Box 49, H-1525, Budapest, Hungary [2] Department of Atomic Physics, Budapest University of Technology and Economics, Budafoki út 8, H-1111, Budapest, Hungary
| | - Erik Janzén
- Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping, Sweden
| | - Jörg Wrachtrup
- 3rd Institute of Physics and Research Center SCOPE, University of Stuttgart, Pfaffenwaldring 57, 70569 Stuttgart, Germany
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25
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Christle DJ, Falk AL, Andrich P, Klimov PV, Hassan JU, Son NT, Janzén E, Ohshima T, Awschalom DD. Isolated electron spins in silicon carbide with millisecond coherence times. NATURE MATERIALS 2015; 14:160-3. [PMID: 25437259 DOI: 10.1038/nmat4144] [Citation(s) in RCA: 108] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/27/2014] [Accepted: 10/20/2014] [Indexed: 05/24/2023]
Abstract
The elimination of defects from SiC has facilitated its move to the forefront of the optoelectronics and power-electronics industries. Nonetheless, because certain SiC defects have electronic states with sharp optical and spin transitions, they are increasingly recognized as a platform for quantum information and nanoscale sensing. Here, we show that individual electron spins in high-purity monocrystalline 4H-SiC can be isolated and coherently controlled. Bound to neutral divacancy defects, these states exhibit exceptionally long ensemble Hahn-echo spin coherence times, exceeding 1 ms. Coherent control of single spins in a material amenable to advanced growth and microfabrication techniques is an exciting route towards wafer-scale quantum technologies.
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Affiliation(s)
- David J Christle
- 1] Institute for Molecular Engineering, University of Chicago, Chicago, Illinois 60637, USA [2] Department of Physics, University of California, Santa Barbara, California 93106, USA
| | - Abram L Falk
- Institute for Molecular Engineering, University of Chicago, Chicago, Illinois 60637, USA
| | - Paolo Andrich
- 1] Institute for Molecular Engineering, University of Chicago, Chicago, Illinois 60637, USA [2] Department of Physics, University of California, Santa Barbara, California 93106, USA
| | - Paul V Klimov
- 1] Institute for Molecular Engineering, University of Chicago, Chicago, Illinois 60637, USA [2] Department of Physics, University of California, Santa Barbara, California 93106, USA
| | - Jawad Ul Hassan
- Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping, Sweden
| | - Nguyen T Son
- Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping, Sweden
| | - Erik Janzén
- Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping, Sweden
| | - Takeshi Ohshima
- Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan
| | - David D Awschalom
- 1] Institute for Molecular Engineering, University of Chicago, Chicago, Illinois 60637, USA [2] Department of Physics, University of California, Santa Barbara, California 93106, USA
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26
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Kraus H, Soltamov VA, Fuchs F, Simin D, Sperlich A, Baranov PG, Astakhov GV, Dyakonov V. Magnetic field and temperature sensing with atomic-scale spin defects in silicon carbide. Sci Rep 2014; 4:5303. [PMID: 24993103 PMCID: PMC4081891 DOI: 10.1038/srep05303] [Citation(s) in RCA: 35] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/14/2014] [Accepted: 05/22/2014] [Indexed: 12/25/2022] Open
Abstract
Quantum systems can provide outstanding performance in various sensing applications, ranging from bioscience to nanotechnology. Atomic-scale defects in silicon carbide are very attractive in this respect because of the technological advantages of this material and favorable optical and radio frequency spectral ranges to control these defects. We identified several, separately addressable spin-3/2 centers in the same silicon carbide crystal, which are immune to nonaxial strain fluctuations. Some of them are characterized by nearly temperature independent axial crystal fields, making these centers very attractive for vector magnetometry. Contrarily, the zero-field splitting of another center exhibits a giant thermal shift of −1.1 MHz/K at room temperature, which can be used for thermometry applications. We also discuss a synchronized composite clock exploiting spin centers with different thermal response.
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Affiliation(s)
- H Kraus
- Experimental Physics VI, Julius-Maximilian University of Würzburg, 97074 Würzburg, Germany
| | - V A Soltamov
- Ioffe Physical-Technical Institute, 194021 St. Petersburg, Russia
| | - F Fuchs
- Experimental Physics VI, Julius-Maximilian University of Würzburg, 97074 Würzburg, Germany
| | - D Simin
- Experimental Physics VI, Julius-Maximilian University of Würzburg, 97074 Würzburg, Germany
| | - A Sperlich
- Experimental Physics VI, Julius-Maximilian University of Würzburg, 97074 Würzburg, Germany
| | - P G Baranov
- Ioffe Physical-Technical Institute, 194021 St. Petersburg, Russia
| | - G V Astakhov
- Experimental Physics VI, Julius-Maximilian University of Würzburg, 97074 Würzburg, Germany
| | - V Dyakonov
- 1] Experimental Physics VI, Julius-Maximilian University of Würzburg, 97074 Würzburg, Germany [2] Bavarian Center for Applied Energy Research (ZAE Bayern), 97074 Würzburg, Germany
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27
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Silicon carbide light-emitting diode as a prospective room temperature source for single photons. Sci Rep 2014; 3:1637. [PMID: 23572127 PMCID: PMC3622138 DOI: 10.1038/srep01637] [Citation(s) in RCA: 96] [Impact Index Per Article: 9.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/10/2012] [Accepted: 03/20/2013] [Indexed: 11/08/2022] Open
Abstract
Generation of single photons has been demonstrated in several systems. However, none of them satisfies all the conditions, e.g. room temperature functionality, telecom wavelength operation, high efficiency, as required for practical applications. Here, we report the fabrication of light-emitting diodes (LEDs) based on intrinsic defects in silicon carbide (SiC). To fabricate our devices we used a standard semiconductor manufacturing technology in combination with high-energy electron irradiation. The room temperature electroluminescence (EL) of our LEDs reveals two strong emission bands in the visible and near infrared (NIR) spectral ranges, associated with two different intrinsic defects. As these defects can potentially be generated at a low or even single defect level, our approach can be used to realize electrically driven single photon source for quantum telecommunication and information processing.
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Ochedowski O, Osmani O, Schade M, Bussmann BK, Ban-d’Etat B, Lebius H, Schleberger M. Graphitic nanostripes in silicon carbide surfaces created by swift heavy ion irradiation. Nat Commun 2014; 5:3913. [PMID: 24905053 DOI: 10.1038/ncomms4913] [Citation(s) in RCA: 50] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/16/2013] [Accepted: 04/07/2014] [Indexed: 11/09/2022] Open
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29
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Abrams D, Trusheim ME, Englund DR, Shattuck MD, Meriles CA. Dynamic nuclear spin polarization of liquids and gases in contact with nanostructured diamond. NANO LETTERS 2014; 14:2471-8. [PMID: 24754755 DOI: 10.1021/nl500147b] [Citation(s) in RCA: 16] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/05/2023]
Abstract
Optical pumping of spin polarization can produce almost complete spin order but its application is restricted to select atomic gases and condensed matter systems. Here, we theoretically investigate a novel route to nuclear spin hyperpolarization in arbitrary fluids in which target molecules are exposed to polarized paramagnetic centers located near the surface of a host material. We find that adsorbed nuclear spins relax to positive or negative polarization depending on the average paramagnetic center depth and nanoscale surface topology. For the particular case of optically pumped nitrogen-vacancy centers in diamond, we calculate strong nuclear spin polarization at moderate magnetic fields provided the crystal surface is engineered with surface roughness in the few-nanometer range. The equilibrium nuclear spin temperature depends only weakly on the correlation time describing the molecular adsorption dynamics and is robust in the presence of other, unpolarized paramagnetic centers. These features could be exploited to polarize flowing liquids or gases, as we illustrate numerically for the model case of a fluid brought in contact with an optically pumped diamond nanostructure.
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Affiliation(s)
- Daniel Abrams
- Department of Physics and ‡Benjamin Levich Institute, CUNY-City College of New York , New York, New York 10031, United States
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30
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Falk AL, Klimov PV, Buckley BB, Ivády V, Abrikosov IA, Calusine G, Koehl WF, Gali A, Awschalom DD. Electrically and mechanically tunable electron spins in silicon carbide color centers. PHYSICAL REVIEW LETTERS 2014; 112:187601. [PMID: 24856721 DOI: 10.1103/physrevlett.112.187601] [Citation(s) in RCA: 55] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/26/2013] [Indexed: 05/03/2023]
Abstract
The electron spins of semiconductor defects can have complex interactions with their host, particularly in polar materials like SiC where electrical and mechanical variables are intertwined. By combining pulsed spin resonance with ab initio simulations, we show that spin-spin interactions in 4H-SiC neutral divacancies give rise to spin states with a strong Stark effect, sub-10(-6) strain sensitivity, and highly spin-dependent photoluminescence with intensity contrasts of 15%-36%. These results establish SiC color centers as compelling systems for sensing nanoscale electric and strain fields.
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Affiliation(s)
- Abram L Falk
- Institute for Molecular Engineering, University of Chicago, Chicago, Illinois 60637, USA and Center for Spintronics and Quantum Computation, University of California, Santa Barbara, Santa Barbara, California 93106, USA
| | - Paul V Klimov
- Institute for Molecular Engineering, University of Chicago, Chicago, Illinois 60637, USA and Center for Spintronics and Quantum Computation, University of California, Santa Barbara, Santa Barbara, California 93106, USA
| | - Bob B Buckley
- Center for Spintronics and Quantum Computation, University of California, Santa Barbara, Santa Barbara, California 93106, USA
| | - Viktor Ivády
- Wigner Research Centre for Physics, Institute for Solid State Physics and Optics, Hungarian Academy of Sciences, PO Box 49, H-1525 Budapest, Hungary and Department of Physics, Chemistry, and Biology, Linköping University, SE-581 83 Linköping, Sweden
| | - Igor A Abrikosov
- Department of Physics, Chemistry, and Biology, Linköping University, SE-581 83 Linköping, Sweden
| | - Greg Calusine
- Center for Spintronics and Quantum Computation, University of California, Santa Barbara, Santa Barbara, California 93106, USA
| | - William F Koehl
- Institute for Molecular Engineering, University of Chicago, Chicago, Illinois 60637, USA and Center for Spintronics and Quantum Computation, University of California, Santa Barbara, Santa Barbara, California 93106, USA
| | - Adám Gali
- Wigner Research Centre for Physics, Institute for Solid State Physics and Optics, Hungarian Academy of Sciences, PO Box 49, H-1525 Budapest, Hungary and Department of Atomic Physics, Budapest University of Technology and Economics, Budafoki út 8., H-1111 Budapest, Hungary
| | - David D Awschalom
- Institute for Molecular Engineering, University of Chicago, Chicago, Illinois 60637, USA and Center for Spintronics and Quantum Computation, University of California, Santa Barbara, Santa Barbara, California 93106, USA
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31
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Gao W, Tkatchenko A. Electronic structure and van der Waals interactions in the stability and mobility of point defects in semiconductors. PHYSICAL REVIEW LETTERS 2013; 111:045501. [PMID: 23931381 DOI: 10.1103/physrevlett.111.045501] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/03/2013] [Revised: 06/03/2013] [Indexed: 06/02/2023]
Abstract
We study the role of electronic structure (band gaps) and long-range van der Waals (vdW) interactions on the stability and mobility of point defects in silicon and heavier semiconductors. Density functional theory calculations with hybrid functionals that contain part of the Hartree-Fock exchange energy are essential to achieve a reasonable description of defect electronic levels, leading to accurate defect formation energies. However, these functionals significantly overestimate the experimental migration barriers. The inclusion of screened vdW interactions further improves the description of defect formation energies, significantly changes the barrier geometries, and brings migration barrier heights into close agreement with experimental values. These results suggest that hybrid functionals with vdW interactions can be successfully used for predictions in a broad range of materials in which the correct description of both the electronic structure and the long-range electron correlation is essential.
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Affiliation(s)
- Wang Gao
- Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, 14195 Berlin, Germany
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