Microscopic origin of electron accumulation in In2O3

Continuous Tunable Energy Band Tailoring Boosts Extending the Sensing of the Waveband Based on (InxGa1-x)2O3 Solar-Blind Photodetectors

Rising wide bandgap semiconductor gallium oxide (Ga2O3) displays huge potential in performing solar-blind photodetection, with constraint in narrow detection wavebands in nature, whereas bandgap modulation through the introduction of exotic atoms into Ga2O3 has an essential effect on the tunable performance of photodetectors and the detection waveband. Here, a novel method for the preparation of (InxGa1-x)2O3 alloy films is proposed, and the continuous tuning of the bandgap in the range of 3.70-4.99 eV is achieved by varying the In-doping content. Alloy-based metal-semiconductor-metal photodetectors were fabricated, achieving a peak responsivity between 254 and 295 nm, superior performance compared to Ga2O3 photodetectors, with a photo-to-dark current ratio as high as 106, and a better optical image-sensing capability. This study offers new insight for high-performance detection of full solar-blind waveband ultraviolet light.

Review-Extremely Thin Amorphous Indium Oxide Transistors

Amorphous oxide semiconductor transistors have been a mature technology in display panels for upward of a decade, and have recently been considered as promising back-end-of-line compatible channel materials for monolithic 3D applications. However, achieving high-mobility amorphous semiconductor materials with comparable performance to traditional crystalline semiconductors has been a long-standing problem. Recently it has been found that greatly reducing the thickness of indium oxide, enabled by an atomic layer deposition (ALD) process, can tune its material properties to achieve high mobility, high drive current, high on/off ratio, and enhancement-mode operation at the same time, beyond the capabilities of conventional oxide semiconductor materials. In this work, the history leading to the re-emergence of indium oxide, its fundamental material properties, growth techniques with a focus on ALD, state-of-the-art indium oxide device research, and the bias stability of the devices are reviewed.

Electrical and optoelectronic anisotropy and surface electron accumulation in ReS2 nanostructures

Two interesting electronic transport properties including in-plane anisotropy and nonhomogeneous carrier distribution were observed in ReS2 nanoflakes. The electrical conductivity defined by the current parallel to the b-axis (‖b) is 32 times higher than that perpendicular to the b-axis (⊥b). Similar anisotropy was also observed in optoelectronic properties in which the ratio of responsivity ‖b to ⊥b reaches 20. In addition, conductivity and thermal activation energy with substantial thickness dependence were observed, which indicates a surface-dominant 2D transport in ReS2 nanoflakes. The presence of surface electron accumulation (SEA) in ReS2 has been confirmed by angle-resolved photoemission spectroscopy and scanning tunneling spectroscopy. The electron concentration (∼1019 cm-3) at the surface is over three orders of magnitude higher than that of the bulks. Sulfur vacancies which are sensitive to air molecules are suggested to be the major factor resulting in SEA and high conductivity in ReS2 nanostructures.

Tuning the Surface Electron Accumulation Layer of In2 O3 by Adsorption of Molecular Electron Donors and Acceptors

In2 O3 , an n-type semiconducting transparent transition metal oxide, possesses a surface electron accumulation layer (SEAL) resulting from downward surface band bending due to the presence of ubiquitous oxygen vacancies. Upon annealing In2 O3 in ultrahigh vacuum or in the presence of oxygen, the SEAL can be enhanced or depleted, as governed by the resulting density of oxygen vacancies at the surface. In this work, an alternative route to tune the SEAL by adsorption of strong molecular electron donors (specifically here ruthenium pentamethylcyclopentadienyl mesitylene dimer, [RuCp*mes]2 ) and acceptors (here 2,2'-(1,3,4,5,7,8-hexafluoro-2,6-naphthalene-diylidene)bis-propanedinitrile, F6 TCNNQ) is demonstrated. Starting from an electron-depleted In2 O3 surface after annealing in oxygen, the deposition of [RuCp*mes]2 restores the accumulation layer as a result of electron transfer from the donor molecules to In2 O3 , as evidenced by the observation of (partially) filled conduction sub-bands near the Fermi level via angle-resolved photoemission spectroscopy, indicating the formation of a 2D electron gas due to the SEAL. In contrast, when F6 TCNNQ is deposited on a surface annealed without oxygen, the electron accumulation layer vanishes and an upward band bending is generated at the In2 O3 surface due to electron depletion by the acceptor molecules. Hence, further opportunities to expand the application of In2 O3 in electronic devices are revealed.

Wide Bandgap Oxide Semiconductors: from Materials Physics to Optoelectronic Devices

Wide bandgap oxide semiconductors constitute a unique class of materials that combine properties of electrical conductivity and optical transparency. They are being widely used as key materials in optoelectronic device applications, including flat-panel displays, solar cells, OLED, and emerging flexible and transparent electronics. In this article, an up-to-date review on both the fundamental understanding of materials physics of oxide semiconductors, and recent research progress on design of new materials and high-performing thin film transistor (TFT) devices in the context of fundamental understanding is presented. In particular, an in depth overview is first provided on current understanding of the electronic structures, defect and doping chemistry, optical and transport properties of oxide semiconductors, which provide essential guiding principles for new material design and device optimization. With these principles, recent advances in design of p-type oxide semiconductors, new approaches for achieving cost-effective transparent (flexible) electrodes, and the creation of high mobility 2D electron gas (2DEG) at oxide surfaces and interfaces with a wealth of fascinating physical properties of great potential for novel device design are then reviewed. Finally, recent progress and perspective of oxide TFT based on new oxide semiconductors, 2DEG, and low-temperature solution processed oxide semiconductor for flexible electronics will be reviewed.

Do We Need "Ionosorbed" Oxygen Species? (Or, "A Surface Conductivity Model of Gas Sensitivity in Metal Oxides Based on Variable Surface Oxygen Vacancy Concentration")

The author provides an opinion on direct experimental evidence available to support the "ionosorption theory" often employed to interpret "electrophysical" measurements made during a gas sensing experiment. This article then aims to provide an alternative framework of a "surface conductivity" model based on recent advances in theoretical and experimental investigations in solid state physics, and to use this framework as a guide toward design rules for future improvement of gas sensor performance.

Experimental and Theoretical Study of the Electronic Structures of Lanthanide Indium Perovskites LnInO3

Ternary lanthanide indium oxides LnInO₃ (Ln = La, Pr, Nd, Sm) were synthesized by high-temperature solid-state reaction and characterized by X-ray powder diffraction. Rietveld refinement of the powder patterns showed the LnInO₃ materials to be orthorhombic perovskites belonging to the space group Pnma, based on almost-regular InO₆ octahedra and highly distorted LnO₁₂ polyhedra. Experimental structural data were compared with results from density functional theory (DFT) calculations employing a hybrid Hamiltonian. Valence region X-ray photoelectron and K-shell X-ray emission and absorption spectra of the LnInO₃ compounds were simulated with the aid of the DFT calculations. Photoionization of lanthanide 4f orbitals gives rise to a complex final-state multiplet structure in the valence region for the 4f ⁿ compounds PrInO₃, NdInO₃, and SmInO₃, and the overall photoemission spectral profiles were shown to be a superposition of final-state 4f ^n-1 terms onto the cross-section weighted partial densities of states from the other orbitals. The occupied 4f states are stabilized in moving across the series Pr-Nd-Sm. Band gaps were measured using diffuse reflectance spectroscopy. These results demonstrated that the band gap of LaInO₃ is 4.32 eV, in agreement with DFT calculations. This is significantly larger than a band gap of 2.2 eV first proposed in 1967 and based on the idea that In 4d states lie above the top of the O 2p valence band. However, both DFT and X-ray spectroscopy show that In 4d is a shallow core level located well below the bottom of the valence band. Band gaps greater than 4 eV were observed for NdInO₃ and SmInO₃, but a lower gap of 3.6 eV for PrInO₃ was shown to arise from the occupied Pr 4f states lying above the main O 2p valence band.

Optimizing the Electronic Structure of In2O3 through Mg Doping for NiO/In2O3 p-n Heterojunction Diodes

In₂O₃ is a wide bandgap oxide semiconductor, which has the potential to be used as an active material for transparent flexible electronics and UV photodetectors. However, the high concentration of unintentional background electrons existing in In₂O₃ makes it hard to be modulated by the electric field or form p-n heterojunctions with a sufficient band-bending width at the interface. In this work, we report the reduction of the background electrons in In₂O₃ by Mg doping (Mg-In₂O₃) and thereby improve the device performance of p-n diodes based on the NiO/Mg-In₂O₃ heterojunction. In particular, Mg doping compensates the free electrons in In₂O₃ and reduces the electron concentration from 1.7 × 10¹⁹ cm^-3 without doping to 1.8 × 10¹⁷ cm^-3 with 5% Mg doping. Transparent p-n heterojunction diodes were fabricated based on p-type NiO and n-type Mg-In₂O₃. The device performance was considerably enhanced by Mg doping with a high rectification ratio of 3 × 10⁴ and a remarkable high breakdown voltage of >20 V. High-resolution X-ray photoelectron spectroscopy was used to investigate the interfacial electronic structure between NiO and Mg-In₂O₃, revealing a type II band alignment with a valence band offset of 1.35 eV and a conduction band offset of 2.15 eV. A large built-in potential of 0.98 eV was found for the undoped In₂O₃ but decreased to 0.51 eV for 5% Mg doping of In₂O₃. The NiO/Mg-In₂O₃ diodes with an improved rectification ratio and wider depletion region provide the possibility of achieving photodetectors with rapid photoresponse.

Valence Band Modification of a (GaxIn1-x)2O3 Solid Solution System Fabricated by Combinatorial Synthesis

The correlation between the crystal structure and valence band structure of a (Ga_xIn_1-x)₂O₃ solid solution system was investigated by using combinatorial synthesis. At a low Ga content of (Ga_xIn_1-x)₂O₃ with a single-phase cubic In₂O₃ crystal structure, a surface electron accumulation layer (SEAL), which is an important electrical phenomenon in In₂O₃, was confirmed. When the Ga content increased to approximately x = 0.4, mixed crystal structures of Ga₂O₃ and In₂O₃ were produced. Above x = 0.5, the dominant valence band structure was attributed to Ga₂O₃, the SEAL disappeared, and the sheet resistance increased greatly by 5 orders of magnitude or more. The in-gap state and valence band structure of the (Ga_xIn_1-x)₂O₃ solid solution system were strongly affected by Ga₂O₃; however, the valence band maximum position shifted to a higher binding energy.

The Itinerant 2D Electron Gas of the Indium Oxide (111) Surface: Implications for Carbon- and Energy-Conversion Applications

Transparent conducting oxides (TCO) have integral and emerging roles in photovoltaic, thermoelectric energy conversion, and more recently, photocatalytic systems. The functional properties of TCOs, and thus their role in these applications, are often mediated by the bulk electronic band structure but are also strongly influenced by the electronic structure of the native surface 2D electron gas (2DEG), particularly under operating conditions. This study investigates the 2DEG, and its response to changes in chemistry, at the (111) surface of the model TCO In₂ O₃ , through angle resolved and core level X-ray photoemission spectroscopy. It is found that the itinerant charge carriers of the 2DEG reside in two quantum well subbands penetrating up to 65 Å below the surface. The charge carrier concentration of this 2DEG, and thus the high surface n-type conductivity, emerges from donor-type oxygen vacancies of surface character and proves to be remarkably robust against surface absorbents and contamination. The optical transparency, however, may rely on the presence of ubiquitous surface adsorbed oxygen groups and hydrogen defect states that passivate localized oxygen vacancy states in the bandgap of In₂ O₃ .

Quasi-degenerate states and their dynamics in oxygen deficient reducible metal oxides

The physical and chemical properties of oxides are defined by the presence of oxygen vacancies. Experimentally, non-defective structures are almost impossible to achieve due to synthetic constraints. Therefore, it is crucial to account for vacancies when evaluating the characteristics of these materials. The electronic structure of oxygen-depleted oxides deeply differs from that of the native forms, in particular, of reducible metal oxides, where excess electrons can localize in various distinct positions. In this perspective, we present recent developments from our group describing the complexity of these defective materials that highlight the need for an accurate description of (i) intrinsic vacancies in polar terminations, (ii) multiple geometries and complex electronic structures with several states attainable at typical working conditions, and (iii) the associated dynamics for both vacancy diffusion and the coexistence of more than one electronic structure. All these aspects widen our current understanding of defects in oxides and need to be adequately introduced in emerging high-throughput screening methodologies.

Influence Mechanism of Cu Layer Thickness on Photoelectric Properties of IWO/Cu/IWO Films

Transparent conductive IWO/Cu/IWO (W-doped In₂O₃) films were deposited on quartz substrates by magnetron sputtering of IWO and Cu in the Ar atmosphere. The X-ray diffraction (XRD) patterns identified the cubic iron-manganese ore crystal structure of the IWO layers. The influence of the thickness of the intermediate ultra-thin Cu layers on the optical and electrical properties of the multilayer films was analyzed. As the Cu layer thickness increases from 4 to 10 nm, the multilayer resistivity gradually decreases to 4.5 × 10^-4 Ω·cm, and the optical transmittance in the mid-infrared range increases first and then decreases with a maximum of 72%, which serves as an excellent candidate for the mid-infrared transparent electrode.

Heterostructure Engineering of a Reverse Water Gas Shift Photocatalyst

To achieve substantial reductions in CO2 emissions, catalysts for the photoreduction of CO2 into value-added chemicals and fuels will most likely be at the heart of key renewable-energy technologies. Despite tremendous efforts, developing highly active and selective CO2 reduction photocatalysts remains a great challenge. Herein, a metal oxide heterostructure engineering strategy that enables the gas-phase, photocatalytic, heterogeneous hydrogenation of CO2 to CO with high performance metrics (i.e., the conversion rate of CO2 to CO reached as high as 1400 µmol g cat-1 h-1) is reported. The catalyst is comprised of indium oxide nanocrystals, In2O3- x (OH) y , nucleated and grown on the surface of niobium pentoxide (Nb2O5) nanorods. The heterostructure between In2O3- x (OH) y nanocrystals and the Nb2O5 nanorod support increases the concentration of oxygen vacancies and prolongs excited state (electron and hole) lifetimes. Together, these effects result in a dramatically improved photocatalytic performance compared to the isolated In2O3- x (OH) y material. The defect optimized heterostructure exhibits a 44-fold higher conversion rate than pristine In2O3- x (OH) y . It also exhibits selective conversion of CO2 to CO as well as long-term operational stability.

The effect of covalently bonded aryl layers on the band bending and electron density of SnO2 surfaces probed by synchrotron X-ray photoelectron spectroscopy

A downward to upward surface band bending change can be induced by grafted 4-(trifluoromethyl)phenyl groups on SnO₂.

Enhancing Thermoelectric Performances of Bismuth Antimony Telluride via Synergistic Combination of Multiscale Structuring and Band Alignment by FeTe2 Incorporation

It has been a difficulty to form well-distributed nano- and mesosized inclusions in a Bi₂Te₃-based matrix and thereby realizing no degradation of carrier mobility at interfaces between matrix and inclusions for high thermoelectric performances. Herein, we successfully synthesize multistructured thermoelectric Bi_0.4Sb_1.6Te₃ materials with Fe-rich nanoprecipitates and sub-micron FeTe₂ inclusions by a conventional solid-state reaction followed by melt-spinning and spark plasma sintering that could be a facile preparation method for scale-up production. This study presents a bismuth antimony telluride based thermoelectric material with a multiscale structure whose lattice thermal conductivity is drastically reduced with minimal degradation on its carrier mobility. This is possible because a carefully chosen FeTe₂ incorporated in the matrix allows its interfacial valence band with the matrix to be aligned, leading to a significantly improved p-type thermoelectric power factor. Consequently, an impressively high thermoelectric figure of merit ZT of 1.52 is achieved at 396 K for p-type Bi_0.4Sb_1.6Te₃-8 mol % FeTe₂, which is a 43% enhancement in ZT compared to the pristine Bi_0.4Sb_1.6Te₃. This work demonstrates not only the effectiveness of multiscale structuring for lowering lattice thermal conductivities, but also the importance of interfacial band alignment between matrix and inclusions for maintaining high carrier mobilities when designing high-performance thermoelectric materials.

Creation of a Short-Range Ordered Two-Dimensional Electron Gas Channel in Al2O3/In2O3 Interfaces

The tuning of electrical properties in oxides via surface and interfacial two-dimensional electron gas (2DEG) channels is of great interest, as they reveal the extraordinary transition from insulating or semiconducting characteristics to metallic conduction or superconductivity enabled by the ballistic transport of spatially confined electrons. However, realizing the practical aspects of this exotic phenomenon toward short-range ordered and air-stable 2DEG channels remains a great challenge. At the heterointerface formed after deposition of an Al₂O₃ layer on a nanocrystalline In₂O₃ layer, a dramatic improvement in carrier conduction equivalent to metallic conduction is obtained. A conductivity increase by a factor of 10¹³ times that in raw In₂O₃, a sheet resistance of 850 Ω/cm², and a room temperature Hall mobility of 20.5 cm² V^-1 s^-1 are obtained, which are impossible to achieve by tuning each layer individually. The physicochemical origin of metallic conduction is mainly ascribed to the 2D interfacially confined O-vacancies and semimetallic nanocrystalline InO_x (x < 2) phases by the clustered self-doping effect caused by O-extraction from In₂O₃ to the Al₂O₃ phase during ALD. Unlike other submetallic oxides, this 2D channel is air-stable by complete Al₂O₃ passivation and thereby promises applicability for implementation in devices.

Carrier dynamics and the role of surface defects: Designing a photocatalyst for gas-phase CO2 reduction

In₂O_3-x(OH)_y nanoparticles have been shown to function as an effective gas-phase photocatalyst for the reduction of CO₂ to CO via the reverse water-gas shift reaction. Their photocatalytic activity is strongly correlated to the number of oxygen vacancy and hydroxide defects present in the system. To better understand how such defects interact with photogenerated electrons and holes in these materials, we have studied the relaxation dynamics of In₂O_3-x(OH)_y nanoparticles with varying concentration of defects using two different excitation energies corresponding to above-band-gap (318-nm) and near-band-gap (405-nm) excitations. Our results demonstrate that defects play a significant role in the excited-state, charge relaxation pathways. Higher defect concentrations result in longer excited-state lifetimes, which are attributed to improved charge separation. This correlates well with the observed trends in the photocatalytic activity. These results are further supported by density-functional theory calculations, which confirm the positions of oxygen vacancy and hydroxide defect states within the optical band gap of indium oxide. This enhanced understanding of the role these defects play in determining the optoelectronic properties and charge carrier dynamics can provide valuable insight toward the rational development of more efficient photocatalytic materials for CO₂ reduction.

Well-Ordered In Adatoms at the In_{2}O_{3}(111) Surface Created by Fe Deposition

Metal deposition on oxide surfaces usually results in adatoms, clusters, or islands of the deposited material, where defects in the surface often act as nucleation centers. Here an alternate configuration is reported. After the vapor deposition of Fe on the In_{2}O_{3}(111) surface at room temperature, ordered adatoms are observed with scanning tunneling microscopy. These are identical to the In adatoms that form when the sample is reduced by heating in ultrahigh vacuum. Density functional theory calculations confirm that Fe interchanges with In in the topmost layer, pushing the excess In atoms to the surface where they arrange as a well-ordered adatom array.

P-type transparent conducting oxides

Transparent conducting oxides constitute a unique class of materials combining properties of electrical conductivity and optical transparency in a single material. They are needed for a wide range of applications including solar cells, flat panel displays, touch screens, light emitting diodes and transparent electronics. Most of the commercially available TCOs are n-type, such as Sn doped In2O3, Al doped ZnO, and F doped SnO2. However, the development of efficient p-type TCOs remains an outstanding challenge. This challenge is thought to be due to the localized nature of the O 2p derived valence band which leads to difficulty in introducing shallow acceptors and large hole effective masses. In 1997 Hosono and co-workers (1997 Nature 389 939) proposed the concept of 'chemical modulation of the valence band' to mitigate this problem using hybridization of O 2p orbitals with close-shell Cu 3d (10) orbitals. This work has sparked tremendous interest in designing p-TCO materials together with deep understanding the underlying materials physics. In this article, we will provide a comprehensive review on traditional and recently emergent p-TCOs, including Cu(+)-based delafossites, layered oxychalcogenides, nd (6) spinel oxides, Cr(3+)-based oxides (3d (3)) and post-transition metal oxides with lone pair state (ns (2)). We will focus our discussions on the basic materials physics of these materials in terms of electronic structures, doping and defect properties for p-type conductivity and optical properties. Device applications based on p-TCOs for transparent p-n junctions will also be briefly discussed.

Spatial Separation of Charge Carriers in In2O3-x(OH)y Nanocrystal Superstructures for Enhanced Gas-Phase Photocatalytic Activity

The development of strategies for increasing the lifetime of photoexcited charge carriers in nanostructured metal oxide semiconductors is important for enhancing their photocatalytic activity. Intensive efforts have been made in tailoring the properties of the nanostructured photocatalysts through different ways, mainly including band-structure engineering, doping, catalyst-support interaction, and loading cocatalysts. In liquid-phase photocatalytic dye degradation and water splitting, it was recently found that nanocrystal superstructure based semiconductors exhibited improved spatial separation of photoexcited charge carriers and enhanced photocatalytic performance. Nevertheless, it remains unknown whether this strategy is applicable in gas-phase photocatalysis. Using porous indium oxide nanorods in catalyzing the reverse water-gas shift reaction as a model system, we demonstrate here that assembling semiconductor nanocrystals into superstructures can also promote gas-phase photocatalytic processes. Transient absorption studies prove that the improved activity is a result of prolonged photoexcited charge carrier lifetimes due to the charge transfer within the nanocrystal network comprising the nanorods. Our study reveals that the spatial charge separation within the nanocrystal networks could also benefit gas-phase photocatalysis and sheds light on the design principles of efficient nanocrystal superstructure based photocatalysts.

Highly infrared-transparent and p-type conductive CuSc1−xSnxO2 thin films and a p-CuScO2:Sn/n-ZnO heterojunction fabricated by the polymer-assisted deposition method

We fabricated a series of infrared (IR)-transparent and conductive Sn-doped CuScO₂ thin films using a polymer-assisted deposition (PAD) method.

Perovskite Sr-Doped LaCrO3 as a New p-Type Transparent Conducting Oxide

Epitaxial La1-x Srx CrO3 deposited on SrTiO3 (001) is shown to be a p-type transparent conducting oxide with competitive figures of merit and a cubic perovskite structure, facilitating integration into oxide electronics. Holes in the Cr 3d t2g bands play a critical role in enhancing p-type conductivity, while transparency to visible light is maintained because low-lying d-d transitions arising from hole doping are dipole forbidden.

Electronic conduction properties of indium tin oxide: single-particle and many-body transport

Indium tin oxide (Sn-doped In2O3-δ or ITO) is a very interesting and technologically important transparent conducting oxide. This class of material has been extensively investigated for decades, with research efforts mostly focusing on the application aspects. The fundamental issues of the electronic conduction properties of ITO from room temperature down to liquid-helium temperatures have rarely been addressed thus far. Studies of the electrical-transport properties over a wide range of temperature are essential to unravelling the underlying electronic dynamics and microscopic electronic parameters. In this topical review, we show that one can learn rich physics in ITO material, including the semi-classical Boltzmann transport, the quantum-interference electron transport, as well as the many-body Coulomb electron-electron interaction effects in the presence of disorder and inhomogeneity (granularity). To fully reveal the numerous avenues and unique opportunities that the ITO material has provided for fundamental condensed matter physics research, we demonstrate a variety of charge transport properties in different forms of ITO structures, including homogeneous polycrystalline thin and thick films, homogeneous single-crystalline nanowires and inhomogeneous ultrathin films. In this manner, we not only address new physics phenomena that can arise in ITO but also illustrate the versatility of the stable ITO material forms for potential technological applications. We emphasize that, microscopically, the novel and rich electronic conduction properties of ITO originate from the inherited robust free-electron-like energy bandstructure and low-carrier concentration (as compared with that in typical metals) characteristics of this class of material. Furthermore, a low carrier concentration leads to slow electron-phonon relaxation, which in turn causes the experimentally observed (i) a small residual resistance ratio, (ii) a linear electron diffusion thermoelectric power in a wide temperature range 1-300 K and (iii) a weak electron dephasing rate. We focus our discussion on the metallic-like ITO material.

Strain and tilt during epitaxial growth of highly ordered In2O3 nanorods

Precise control over the morphology of one-dimensional (1D) nanostructures is an essential step in the effort to develop nano-devices with exotic properties. Here we demonstrate the formation of highly aligned In2O3 nanorod arrays on Y-stabilised ZrO2(110) grown by oxygen plasma assisted molecular beam epitaxy. The evolution of morphologies, strain and tilt in the In2O3 nanorods are studied by atomic force microscopy and high resolution synchrotron-based X-ray diffraction. It is shown that the preferential 1D growth is driven by minimization of the total surface and interface energies. The mismatch of ca. 1.7% between the substrate and the epilayer is accommodated by strain along the [110] direction coupled with tilting of the rods along [001] and [001] directions and contraction in the [110] direction. The present highly ordered In2O3 nanorod arrays supported on an insulating substrate are of potential interest for large-scale fabrication of nano-devices.